PPJX8808
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
SOT-563
500mA
Current
Unit : inch(mm)
Features
Low Voltage Drive (1.2V).
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: SOT-563 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00009 ounces, 0.0026 grams
Marking: X08
o
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
+10
V
ID
500
mA
IDM
1000
mA
300
mW
2.8
mW/ C
Continuous Drain Current
Pulsed Drain Current
o
TA=25 C
Power Dissipation
o
PD
Derate above 25 C
Operating Junction and Storage Temperature Range
TJ,TSTG
-55~150
RθJA
417
o
o
C
Typical Thermal resistance
-
Junction to Ambient
August 15,2019-REV.03
(Note 3)
o
C/W
Page 1
PPJX8808
o
Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
20
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
0.3
0.64
0.9
V
VGS=4.5V, ID=500mA
-
310
400
VGS=2.5V, ID=200mA
-
360
650
VGS=1.8V, ID=100mA
-
430
800
VGS=1.5V, ID=50mA
-
510
1200
VGS=1.2V, ID=20mA
-
710
3000
Drain-Source On-State Resistance
RDS(on)
mΩ
Zero Gate Voltage Drain Current
IDSS
VDS=16V, VGS=0V
-
-
1
uA
Gate-Source Leakage Current
IGSS
VGS=+8V, VDS=0V
-
+0.5
+10
uA
-
1.4
-
-
0.22
-
-
0.21
-
-
67
-
-
19
-
-
6
-
-
2.8
-
-
20
-
-
23
-
-
23
-
-
-
500
mA
-
0.87
1.3
V
Dynamic
(Note 5)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDS=10V, ID=500mA,
VGS=4.5V
(Note 1,2)
VDS=10V, VGS=0V,
f=1.0MHZ
VDD=10V, ID=150mA,
VGS=4.0V,
RG=10Ω
(Note 1,2)
nC
pF
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
IS
VSD
--IS=500mA, VGS=0V
NOTES :
1. Pulse width
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