PSMP050N10NS2_T0_00601

PSMP050N10NS2 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 120 A RDS(ON),max < 5.0 mΩ TO-220AB-L 40.5 nC QG (TYP) Feature  RDS(ON),max < 5.0 mΩ at VGS = 10 V, ID = 50 A  RDS(ON),max < 7.0 mΩ at VGS = 6 V, ID = 25 A  High switching speed  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-220AB-L package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 2.0948 grams Application  SR solutions of Power supply, BMS, BLDC motor driver switch Absolute Maximum Ratings (TA = 25 oC unless otherwise specified) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 TC=25 oC Continuous Drain Current (Note 3) TC=100 oC Pulsed Drain Current (Note 6) TC=25 oC ID 120 76 UNITS V A IDM 480 A Single Pulse Avalanche Current (Note 5) IAS 50 A Single Pulse Avalanche Energy (Note 5) EAS 318 mJ TC=25 oC Power Dissipation TC=100 oC 55 W -55~150 oC SYMBOL MAXIMUM UNITS Junction-to-Case (Bottom) RθJC 0.9 oC/W Junction-to-Ambient (Note.4) RθJA 60 oC/W Thermal Characteristics PARAMETER July 21,2022 138 TJ,TSTG Operating Junction and Storage Temperature Range Thermal Resistance PD PSMP050N10NS2-REV.00 Page 1 PSMP050N10NS2 Electrical Characteristics (TA = 25 oC unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=250 μA 100 - - Gate Threshold Voltage VGS(th) VDS=VGS, ID=270 μA 1.8 2.8 3.8 VGS=10 V, ID=50 A - 4.3 5.0 VGS=6 V, ID=25 A - 5.4 7.0 Drain-Source On-State Resistance (Note 1) RDS(on) V mΩ Zero Gate Voltage Drain Current IDSS VDS=100 V, VGS=0 V - - 1 μA Gate-Source Leakage Current IGSS VGS=±20 V, VDS=0 V - - ±100 nA gfs VDS=10 V, ID=50 A - 100 - S Rg f =1.0 MHz - 0.8 1.6 Ω - 40.5 53 Transfer characteristics (Note 1) Gate Resistance Dynamic (Note 6) Total Gate Charge Qg Gate-Source Charge Qgs VDS=50 V, ID=50 A, - 15 - Gate-Drain Charge Qgd VGS=10 V - 6 - - 5 - - 3010 3910 - 1080 1400 - 14 - - 85 110 - 16 - - 6 - - 26 - - 6 - Gate Plateau Voltage Vplateau Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Charge Qoss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time VDS=50 V, VGS=0 V, f=250 kHz VDS=50 V, VGS=0 V VDD=50 V, ID=50 A, VGS=10 V, RG=3.0 Ω (Note 2) tf nC V pF nC ns Drain-Source Diode Diode Forward Voltage Reverse Recovery Charge (Note 6) Reverse Recovery Time (Note 6) VSD IS=50 A, VGS=0 V - 0.9 1.2 V Qrr IF=50 A, VDD=50 V - 85 170 nC Trr di/dt=100 A/μs - 56 112 ns NOTES : 1. 2. 3. 4. 5. 6. Pulse width < 300 μs, Duty cycle < 2 % Essentially independent of operating temperature typical characteristics. The maximum drain current calculated by maximum junction temperature and thermal impedance. It can be varied by application and environment. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper. EAS is calculated based on the condition of L = 1.0 mH, IAS = 25.2 A, VDD = 50 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 50 A in production. Guaranteed by design, not subject to production testing. July 21,2022 PSMP050N10NS2-REV.00 Page 2 PSMP050N10NS2 TYPICAL CHARACTERISTIC CURVES 500 500 400 ID-Drain Current (A) ID-Drain Current (A) 400 VGS = 8 V 300 VGS= = 6.5 V 200 VGS= 6 V 100 VGS= 5 V 300 TJ= 150 ℃ 200 100 TJ= 25 ℃ 0 0 0 1 2 3 0 4 1 2 Fig.1 Output Characteristics 4 5 6 7 8 9 10 Fig.2 Transfer Characteristics 16 2.0 VGS = 5 V 14 VGS = 6 V 12 VGS = 6.5 V 10 VGS = 8 V 8 6 VGS = 10 V 4 2 Normalzided RDS(on)- On-Resistance (mΩ) RDS(on)- On-Resistance (mΩ) 3 VGS- Gate-to-Source Voltage (V) VDS- Drain-to-Source Voltage (V) 1.8 1.6 VGS = 10 V 1.4 VGS = 6 V 1.2 1.0 0.8 0.6 0.4 0 0 50 100 150 200 250 300 350 -75 400 -50 -25 0 ID- Drain Current (A) 25 50 75 100 125 150 Temperature (℃) Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction temperature 10000 30 1000 RDS(on)- On-Resistance (mΩ) Ciss Capacitance (pF) TJ= -55 ℃ Pulse Duration = 180 μs VDS = 4 V VGS = 10 V Coss 100 Crss 10 f = 250 kHz VGS = 0 V Pulse Duration = 180 μs ID = 50 A 25 20 15 TJ = 125 ℃ 10 5 TJ = 25 ℃ 0 1 0.1 1 10 100 3 Fig.5 Capacitance vs. Drain-Source Voltage July 21,2022 4 5 6 7 8 9 10 VGS- Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig.6 On-Resistance vs. Gate-Source Voltage PSMP050N10NS2-REV.00 Page 3 PSMP050N10NS2 TYPICAL CHARACTERISTIC CURVES 10 VGS-Gate-to-Source Voltage (V) Normalized BVDSS- Drain-to-Source Voltage (V) 1.10 VGS = 10 V ID = 50 A VDD = 50 V 8 VDD = 20 V 6 VDD = 80 V 4 2 0 Qg(nC) 0 ID = 250uA 1.05 1.00 0.95 0.90 10 20 30 40 50 -75 -50 -25 0 Qg (nC) 25 50 75 100 125 150 Temperature (℃) Fig.8 Breakdown Voltage Variation vs. Temperature Fig.7 Gate-Charge Characteristics 1.4 ISD-Source-to-Drain Current (A) Normalized VGS(th)-Threshold Voltage (V) ID = 270 uA 1.2 1.0 0.8 0.6 100 10 1 TJ = -55 ℃ 0.4 0.1 -75 -50 -25 0 25 50 75 100 125 150 0.2 Fig.9 Threshold Voltage Variation with Temperature Normalized Pulse thermal resistance [K/W] 10 This area is limited by RDS(ON) 100 10 SINGLE PULSE RӨJC = 0.9 °C/W TC = 25 °C 0.1 1 10 100 1 0.8 1 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse 1.2 1.4 SINGLE PULSE RӨJC = 0.9 °C/W PDM 0.1 PW D= T PW T Notes: Duty = PW / T TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.00001 VDS- Drain-to-Source Voltage (V) 0.0001 0.001 0.01 0.1 1 Pulse time [s] Fig.11 Maximum Safe Operating Area July 21,2022 0.6 Fig.10 Source-Drain Diode Forward Voltage 1000 1 0.4 VSD-Source-to-Drain Voltage (V) Temperature (℃) ID-Drain Current (A) TJ = 25 ℃ TJ = 150 ℃ Fig.12 Normalized Transient Thermal Impedance PSMP050N10NS2-REV.00 Page 4 PSMP050N10NS2 TYPICAL CHARACTERISTIC CURVES 140 100 10 TJ = 100 ℃ ID-Drain Current (A) IAV, Avalanche Current (A) 120 TJ = 25 ℃ TJ = 125 ℃ 100 80 60 40 20 1 0 10 100 1000 25 tAV, Avalanche duration (μs) Fig.13 Avalanche Characteristics July 21,2022 50 75 100 125 150 Temperature (℃) Fig.14 Drain Current vs. Case Temperature PSMP050N10NS2-REV.00 Page 5 PSMP050N10NS2 Product and Packing Information Part No. Package Type Packing Type Marking PSMP050N10NS2 TO-220AB-L 50pcs / Tube 050N10NS Packaging Information TO-220AB-L Dimension Unit: inch(mm) Marking Diagram PJ 050N10NS YWLL x July 21,2022 Y W LL x = Year Code = Week Code (A~Z) = Lot Code (00~99) = Production Line Code PSMP050N10NS2-REV.00 Page 6 PSMP050N10NS2 Disclaimer ● Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc.. ● Panjit International Inc. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latest document. ● Panjit International Inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. ● Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. ● Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ● The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages resulting from such improper use or sale. ● Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when complaining. July 21,2022 PSMP050N10NS2-REV.00 Page 7