SB30100LCT

SB30100LCT DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER VOLTAGE FEATURES • Low forward voltage drop, low power losses • High efficiency operation • In compliance with EU RoHS 2002/95/EC directives 100 Volts CURRENT 30 Ampers MECHANICAL DATA • Case : TO-220AB, Plastic • Terminals : Solderable per MIL-STD-750, Method 2026 • Weight: 0.0655 ounces, 1.859 grams .058(1.47) .042(1.07) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ=25oC,L=60mH per diode Ty p i c a l T h e r m a l R e s i s t a n c e Operating junction and storage temperature range per di ode per device per di ode per di ode SYMBOL VRRM I F(AV) I FSM EA S RθJ C TJ,TSTG VALUE 100 30 15 275 300 2 .5 -55 to + 150 O UNIT V A A mJ C/W o C ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Breakdown voltage per diode SYMBOL V BR IR=1.0mA IF=5A IF=7.5A IF=15A IF=5A IF=7.5A IF=15A VR=70V Reverse current per diode (2) IR VR=100V TA=25 C TA=125oC o TEST CONDITIONS MIN. 103 - TYP. 120 0.52 0.58 0.72 0.46 0.53 0.62 10 - MAX. 0.80 0.68 500 32 UNIT V TA=25oC V Instantaneous forward voltage per diode (1) VF TA=125oC V µA µA mA Note.1 Pulse test : 300µs pulse width, 1% duty cycle 2. Pulse test : Pulse widh < 40ms PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.4-JUN.26.2009 STAD-AUG.04.2009 PAGE . 1 SB30100LCT RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) 35 Average Forward Current (A) Junction Capacitance (pF) Resistive or Inductive Load 30 25 20 15 10 5 0 0 25 50 75 100 125 150 10000 T J =25 oC f=1.0MHz Vsig=50mVp-p 1000 100 10 0.1 1 10 100 Case Temperature ( oC) Reverse Voltage (V) Figure 1. Forward Current Derating Curve Figure 2. Typical Junction Capacitance 100 100 Instantaneous Forward Current (A) Instantaneous Reverse Current (mA) T A =100 C 10 o o 10 T A =100 C 1 0.1 T A =25 oC 0.01 0.001 10 20 o T A =125 C 1 T A =75 C T A =25 C o o 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode REV.0.4-JUN.26.2009 STAD-AUG.04.2009 PAGE . 2