SB3045LCT

SB3045LCT DUAL LOW VF SCHOTTKY RECTIFIER VOLTAGE FEATURES • Low forward voltage drop, low power losses • High efficiency operation • In compliance with EU RoHS 2002/95/EC directives 45 Volts CURRENT 30 Amperes MECHANICAL DATA Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight: 0.0655 ounces, 1.859 grams .058(1.47) .042(1.07) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Typ i c a l the r ma l r e s i s ta nc e Operating junction Storage temperature range per device per diode per diode SYMBOL VRRM I F(AV) I FSM R ΘJC TJ TSTG VALUE 45 30 15 250 2 .5 -55 to + 125 -55 to + 150 O UNIT V A A C /W o C C o ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Breakdown voltage SYMBOL VBR TEST CONDITIONS I R=1mA I F=15A I F=30A I F=15A I F=30A VR=60V TA=25oC TA=125oC TA=25 C TA=125oC o MIN. 45 - TYP. 0.42 0.59 - MAX. 0.53 0.72 0.50 0.67 0.4 200 UNIT V V V mA Instantaneous forward voltage per diode (1) VF Reverse current per diode (2) Note : 1. Pulse test : tp < 380μs, δ < 2% 2. Pulse test : Pulse width < 2.5ms IR June 15,2010-REV.02 PAGE . 1 SB3045LCT RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) Average Forward Current (A) 35 Junction Capacitance (pF) Resistive or Inductive Load 30 25 20 15 10 5 0 0 25 50 75 100 125 150 10000 T J =25 oC f=1.0MHz Vsig=50mVp-p 1000 100 10 0.1 1 10 100 Case Temperature ( oC) Reverse Voltage (V) Figure 1. Forward Current Derating Curve Figure 2. Typical Junction Capacitance 1000 1000 Instantaneous Forward Current (A) T A =125 C 100 o Instantaneous Reverse Current (mA) 100 T A =100 C 10 1 0.1 0.01 10 20 T A =25 oC o T A =100 oC 10 1 T A =75 C T A =25 oC o 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode June 15,2010-REV.02 PAGE . 2