SB4045LCT

SB4045LCT DUAL LOW VF SCHOTTKY RECTIFIER VOLTAGE FEATURES • Low forward voltage drop, low power losses • High efficiency operation • In compliance with EU RoHS 2002/95/EC directives 45 Volts CURRENT 40 Amperes MECHANICAL DATA Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight: 0.0655 ounces, 1.859 grams .058(1.47) .042(1.07) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Typ i c a l The rma l Re s i s ta nc e Operating junction Storage temperature range per device per diode per diode SYMBOL VRRM I F(AV) I FSM R ΘJC TJ TSTG VALUE 45 40 20 250 2 .5 -55 to + 125 -55 to + 150 O UNIT V A A C /W o C C o ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Breakdown voltage SYMBOL V BR TEST CONDITIONS I R=1mA I F=10A I F=20A I F=10A I F=20A VR=45V TJ=25oC TJ=125oC TJ=25oC TJ=100oC MIN. 49 TYP. 0.44 0.51 0.36 0.50 MAX. 0.48 0.53 0.55 500 100 UNIT V V V μA mA Instantaneous forward voltage per diode (1) VF Reverse current per diode (2) IR Note.1.Pulse test : 300μs pulse width, 1% duty cycle 2.Pulse test : pulse width < 40ms PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Apr 26,2010-REV.00 PAGE . 1 SB4045LCT 100 100 IR, Leakage Current (mA) IF, Forward Current (A) TJ = 100°C 10 10 TJ = 100°C TJ = 125°C 1 1 TJ = 25°C 0.1 TJ = 25°C TJ = 75°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.01 20 40 60 80 100 VF, Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.1 Typical Forward Characteristics Per Diode CJ, Junction Capacitance (pF) 10000 Fig.2 Typical Reverse Characteristics Per Diode IF, Average Forward Current (A) 25 20 15 10 5 0 0 25 50 75 100 125 150 1000 100 10 0.1 1 10 100 VR, Reverse Bias Voltage (V) TC, Case Temperature (°C) Fig.3 Typical Junction Capacitance Per Diode Fig.4 Forward Current Derating Curve Per Diode Apr 26,2010-REV.00 PAGE . 2