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SB850D

SB850D

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    SB850D - D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER - Pan Jit International Inc.

  • 数据手册
  • 价格&库存
SB850D 数据手册
DATA SHEET SB820D~SB8150D D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. .418(10.6) .357(9.1) .335(8.5) .409(10.4) .387(9.80) 20 to 150 Volts CURRENT 8 Ampere TO-263 / D PAK 2 Unit: inch (mm) .189(4.8) .137(4.4) .055(1.4) .047(1.2) • High surge capacity. • For use in low voltage,high frequency inverters free wheeling , and polarlity protection applications. Normal : 80~95% Sn, 5~20% Pb Pb free: 99% Sn above .110(2.8) • Both normal and Pb free product are available : .236(6.0) .197(5.0) .035(0.9)MAX .378(9.60) • Low forwrd voltge, high current capability .026(0.7) .011(0.3) MECHANICALDATA Case: TO-263/D2PAK molded plastic package Terminals: Lead solderable per MIL-STD-202G, Method 208 Polarity: As marked. Mounting Position: Any Weight: 0.06 ounces, 1.7 grams. .055(1.4) .039(1.0) .108(2.75) .092(2.35) .108(2.75) .092(2.35) blank MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% PAR AME T E R M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e M a xi m um R M S V o l t a g e M a xi m um D C B l o c k i ng V o l t a g e M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m ) l e a d l e ng t h a t T c = 1 0 0 OC P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d ) M a xi m um F o r w a r d V o l t a g e a t 8 . 0 A M a x i m u m D C R e v e r s e C u r r e n t TA = 2 5 O C a t R a t e d D C B l o c k i n g V o l t a g e TA = 1 0 0 O C Ty p i c a l T h e r m a l R e s i s t a n c e O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g S t o r a g e Te m p e r a t u r e R a n g S YM B OL V RRM V RMS V DC IAV IF S M VF SB820D 20 14 20 SB830D 30 21 30 SB840D 40 28 40 SB850D 50 35 50 8 150 SB860D 60 42 60 SB880D 80 56 80 SB8100D SB8150D 100 70 100 150 105 150 U N IT S V V V A A 0 .5 5 0 .7 5 0 .5 50 6 -5 0 to +1 2 5 -5 0 to +1 5 0 0 .8 5 0.92 V IR R θJ C TJ T J , T S TG mA O C/W O C C O NOTES: Both Bonding and Chip structure are available. STAD-FEB.21.2005 PAGE . 1 RATING AND CHARACTERISTIC CURVES 150 AVERAGE FORWARD CURRENT AMPERES 10 8 6 4 2 0 0 50 100 150 PEAK FORWARD SURGE CURRENT AMPERES 120 110 90 70 50 30 20 10 1 2 5 10 8.3ms Single Half Since-Wave JEDEC Method CASE TEMPERATURE, OC 20 50 100 NO. OF CYCLE AT 60HZ Fig.1- FORWARD CURRENT DERATING CURVE Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT 10 INSTANTANEOUS REVERSE CURRENT, mA 40 INSTANTANEOUS FORWARD CURRENT AMPERES 50V~60V 20V~40V TJ=100 C 1.0 O 10 8 6 4 2 1.0 .8 .6 .4 .2 .1 .3 .4 .5 .6 .7 80V~100V 0.1 TJ=75 C O 0.01 TJ=25 C O 0.001 .8 .9 1.0 20 40 60 80 100 120 140 PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%) INSTANTANEOUS FORWARD VOLTAGE, VOLTS Fig.3- TYPICAL REVERSE CHARACTERISTICS Fig.4- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS STAD-FEB.21.2005 PAGE . 2
SB850D 价格&库存

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