TSP075A

DATA SHEET TSP058A~TSP320A AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE FEATURES • Protects by limiting voltages and shunting surge currents away from sensitive circuits 1.0(25.4) MIN. DO-15 .034(.86) .028(.71) Unit: inch ( mm ) • Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life MECHANICAL DATA • Case: JEDEC DO-15 molded plastic • Te r m i n a l s : P l a t e d A x i a l l e a d s , s o l d e r a b l e p e r MIL-STD-750, Method 2026 • Polarity: Bi-directional • Weight: 0.015 ounce, 0.4 gram .300(7.6) .230(5.8) .140(3.6) .104(2.6) SUMMARY ELECTRICAL CHARACTERISTICS Rated Repetitive PeakOff-State Voltage Part Number Max. VDRM V TSP058A TSP065A TSP075A TSP090A TSP120A TSP140A TSP160A TSP190A TSP220A TSP275A TSP320A notes NOTES: 1. Specific VDRM values are available by request. 2. Specific IH values are available by request. 3. All ratings and characteristics are at 25 °C unless otherwise specified. 4. VDRM applies for the life of the device. IDRM will be in spec during and following operation of the device. 5. VBO1 is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform 6. VBO2 is at f = 60 Hz, ISC = 1 A(RMS), Vac = 1KV(RMS), RL = 1 KW, 1/2 AC cycle DATE : SEP.02.2002 PAGE . 1 58 65 75 90 120 140 160 190 220 275 320 (1,3) Breakover Voltage Max. VBO @ IBO V 77 88 98 130 160 180 220 260 300 350 400 (3,5,6) On-State Voltage Max. V T @ 1A V 5 5 5 5 5 5 5 5 5 5 5 (3) Repetitive Breakover Holding Off-State Capacitance PeakOff-State Current Currnet (f = 1 MHz , Vac = 15 mVRMS) Current Max. I DRM µA 5 5 5 5 5 5 5 5 5 5 5 (3) Max. I BO mA 800 800 800 800 800 800 800 800 800 800 800 (3) Min. IH mA 150 150 150 150 150 150 150 150 150 150 150 (2,3) 44 39 37 34 32 29 28 28 27 27 27 (3) Typ. pF 66 64 57 54 48 47 43 40 40 38 38 (3) 16 15 13 12 12 9 9 8 8 8 8 (3) Max. Typ. pF 24 23 20 18 17 16 15 14 14 13 13 (3) Max. 1.0(25.4) MIN. C O @ 0 V dc C O @ 5 0 V dc CAPACITANCE CHARACTERISTICS F = 1 MHz, Vac = 15 mVrms Off-State C apacitance CO Part N umber 0 V dc Typ. TSP058A TSP065A TSP075A TSP090A TSP120A TSP140A TSP160A TSP190A TSP220A TSP275A TSP320A 44 39 37 34 32 29 28 28 27 27 27 Max. 66 64 57 54 48 47 43 40 40 38 38 Typ. 40 35 33 30 28 25 25 24 23 23 23 1 V dc Max. 51 49 42 39 33 32 27 25 25 24 24 Typ. 36 31 29 26 24 21 21 20 19 19 19 pF 2 V dc Max. 49 47 40 37 31 30 24 23 23 22 22 Typ. 33 28 26 23 21 18 18 17 16 16 16 5 V dc Max. 44 42 35 32 26 25 20 18 18 17 17 Typ. 16 15 13 12 12 9 9 8 8 8 8 50 V dc Max. 24 23 20 18 17 16 15 14 14 13 13 RATING AND CHARACTERISTIC CURVES f=1 M HZ v d=15mV RMS AC T J= 25 C 30 60 O f=1 M HZ v d=15mV RMS AC T J= 25 C O Capacitance (pF) 40 30 20 Capacitance (pF) 50 25 TSP220SA V D=0 Volts DC 20 15 V D=50 Volts DC 10 0 50 100 150 200 250 300 350 10 5 0.1 1 10 100 VDRM Typical Capacitance v.s. Rated Repetitive Off-state Voltage VD Off-state Voltage (V) Typical Capacitance v.s. Off-state Voltage 100 10A, 10/1000 microseconds TSP220SC 300 10 I D, Off-State Current (mA) 0.1 TSP220SB I H , Holding Current (mA) 1 250 200 0.01 150 0.001 TSP220SA 0.0001 0 100 25 0 25 50 75 O 100 125 20 40 60 80 100 120 140 150 TJ , Junction Temperature ( C) Typical Holding Current TJ ( C ) Typical Off-state Current v.s Junction Temperature O DATE : SEP.02.2002 PAGE . 2 RATING AND CHARACTERISTIC CURVES 10A, 10/1000 microseconds -0.1 -1.0 10A, 10/1000 microseconds Temperature Coefficient (mA/ oC) -1.0 Temperature Coefficient (mA/ oC) -25 0 25 50 75 O -1.5 -1.5 -2.0 -2.0 -2.5 -2.5 -3.0 -3.0 100 125 -3.5 150 200 250 O 300 350 TJ , Junction Temperature ( C) Typical Holding Current Temperature Coefficient TJ , Junction Temperature ( C) Typical Holding Current Temperature Coefficient .16 Temperature Coefficient of VDRM , % / oC 0.14 0.12 0.1 0.08 50 100 150 200 o 250 300 350 Rated VDRM at TJ=25 C (V) Temperature Coefficient of VDRM IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and their characterization are constantly in process. This provides a superior performing and the highest value product. The factory should be consulted for the most recent information and for any special characteristics not described or specified. © Copyright PanjIt International Inc. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. PanJit Internatioal Inc. http://www.panjit.com.tw DATE : SEP.02.2002 email: sales@panjit.com.tw PAGE . 3 SELECTION GUIDE Follow these steps to select the proper Thyristor surge protector for your application: 1. Define the operating parameters for the circuit: • Ambient operating temperature range • Maximum telephone line operating current (highest battery and shortest copper loop) • Maximum operating voltage: (Maximum DC bias + peak ringing voltage) • Maximum surge current • System voltage damage threshold • Select device with an off-state voltage rating (VDRM) above the maximum operating voltage at the minimum operating temperature. 3. Select surge current ratings (IPPS and ITSM) ³ those which the application must withstand. 4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the system. 5. Verify that the maximum breakover voltage of the device is below the system damage threshold. 6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range. 7. Verify that the device's dimensions fit the application's space considerations. 8. Independently evaluate and test the suitability and performance of the device in the application MAXIMUM SURGE RATINGS (TJ = 25 °C UNLESS OTHERWISE NOTED) Rating Symbol Short-Circuit Current Wave Open-Circuit Voltage Wave Value Notes 2/10 µs 2/10 µs 175 A 8/20 µs 1.2/50 µs 150 A 10/160 µs 10/160 µs 100 A Non-Repetitive Peak Pulse Current I PPS 5/310 µs 10/700 µs 85 A 10/560 µs 10/560 µs 70 A 10/1000 µs 10/1000 µs 50 A (1,2,3,4) Non-Repetitive Peak On-State Surge Current I TSM 20A (1,2,4,5,6) Notes: 1. Thermal accumulation between successive surge tests is not allowed. 2. The device under test initially must be in thermal equilibrium with TJ = 25 °C. 3. Test at 1 cycle, 60 Hz. 4. Surge ratings are non-repetitive because instantaneous junction temperatures may exceed the maximum rated T J . Nevertheless, devices will survive many surge applications without degradation. Surge capability will not degrade over a device's typical operating life. 5. Adjust the surge generator for optimum current-wave accuracy when both voltage and current wave specifications cannot be exactly met. The current wave is more important than the voltage wave for accurate surge evaluation. 6. The waveform is defined as A/B ms where: A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta) B (Duration time to 50% level of Ipps) = T1 - T0 60% 80% % Ipps 100% 40% 20% 0% To Ta Tb Time T1 DATE : SEP.02.2002 PAGE . 4 MAXIMUM THERMAL RATINGS Rating Storage Junction Temperature Range Operating Junction Temperature Range Operating Ambient Temperature Range Notes: PCB board mounted on minimum foot print. Symbol TSTG TJ Ta Value -50 to 150 -40 to 150 -40 to 65 Unit O C C C O O THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction to Leads TL on tab adjacent to plastic. Both leads soldered to identical pad sizes. Symbol RθJL Value Max. 20 O Unit C/W Notes: The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction to lead resistance. The data shown is to be used as guideline values for preliminary engineering. ELECTRICAL CHARACTERISTICS (TC = 25°C UNLESS OTHERWISE NOTED) Parameters Repetitive Peak Off-State Current Breakover Current Holding Current1 On-State Voltage Notes: Specific I H values are available by request. Test Conditions VD = rated VDRM f = 60 Hz, ISC = 1 Arms, Vac = 1 KVrms, RL = 1 KΩ , 1/2 AC cycle 10/1000µs waveform, ISC = 10A, VOC = 62 V, RL = 400 Ω I T = 1 A, Tw = 300 µs, 1 pulse Symbol I DRM I BO IH VT Min. Max. 5 800 Unit µA mA mA 150 5 V DATE : SEP.02.2002 PAGE . 5 +I I PPS I TSM IT I BO IH I BR _ I DRM V VT V DRM V BO +V V BR _I Characteristic VBO I BO IH IT V T Symbol Breakover Voltage Breakover Current Holding Current On-state current On-state voltage Value Maximum voltage across the device in or at breakdown measured under a specified voltage and current rate of rise Instantaneous current flowing at the breakover voltage (VBO) Minimum current required to maintain the device in the on-state Current through the device in the on-state condition Voltage across the device in the on-state condition at a specified current (IT) The highest instantaneous value of the off-state voltage, including all repetitive transient voltages but excluding all nonrepetitive transient voltages The maximum (peak) value of current that results from the application of VDRM Rated maximum value of peak impulse current of specified amplitude and waveshape that may be applied without damage to the device under test Rated value of the rate of rise of current that the device can withstand without damage. The maximum rate of rise of voltage (belowVDRM) that will not cause switching from the off-state to the on-state. VDRM Rated Repetitive Peak Off-State Voltage I DRM Repetitive Peak Off-State Current I PPS Non-Repetitive Peak pulse current di/dt dv/dt Critical rate of rise of on-state current Critical Rate of Rise of Off-State Voltage DATE : SEP.02.2002 PAGE . 6