AGR09045E

AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of delivering a minimum output power of 45 W, it is ideally suited for today's RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09045EU AGR09045EF Sym Value Unit R R JC JC 1.2 1.5 °C /W °C /W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C : AGR09045EU AGR09045EF Derate Above 25 ° C: AGR09045EU AGR09045EF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, +15 ID 4.25 PD PD — — TJ 146 117 0.83 0.67 200 Unit Vdc Vdc Adc W W W/°C W/°C °C AGR09045EU (unflanged) AGR09045EF (flanged) TSTG –65, +150 °C Figure 1. Available Packages Features Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, traffic codes 8—13: — Output power (POUT): 10 W. — Power gain: 20 dB. — Efficiency: 28%. — Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset: –45 dBc) (1.98 MHz offset: –60 dBc). — Input return loss: 10 dB. High-reliability, gold-metalization process. High gain, efficiency, and linearity. Integrated ESD protection. Si LDMOS. Industry-standard packages. 45 W minimum output power. * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR09045E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Off Characteristics Drain-source Breakdown Voltage (VGS = 0, ID = 100 µA) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1.0 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 µA) Gate Quiescent Voltage (VDS = 28 V, IDQ = 450 mA) Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) Table 5. RF Characteristics Parameter Dynamic Characteristics Input Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) CISS COSS CRSS — — — 73 23 1.2 — — — pF pF pF Symbol Min Typ Max Unit GFS VGS(TH) VGS(Q) VDS(ON) — — — — 3 — 3.5 0.25 — 4.8 — — S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 — — — — — — 1.3 4 Vdc µAdc µAdc Symbol Min Typ Max Unit Functional Tests (in Agere Systems Supplied Test Fixture) (Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz) Linear Power Gain (VDS = 28 V, POUT = 6 W, IDQ = 450 mA) Output Power (VDS = 28 V, 1 dB compression, IDQ = 450 mA) Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 450 mA) Third-order Intermodulation Distortion (100 kHz spacing, VDS = 28 V, POUT = 45 WPEP, IDQ = 450 mA) Input Return Loss Ruggedness (VDS = 28 V, POUT = 45 W, IDQ = 450 mA, f = 880 MHz, VSWR = 10:1, all angles) IMD IRL — GL P1dB 19 45 — — — 20 60 59 –31 10 — — — — — dB W % dBc dB No degradation in output power. 2 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09045E VDD + C19 VGG C26 R3 + C14 + R2 C13 C12 C11 C10 C9 C8 Z13 C17 Z1 RF INPUT Z3 C27 Z9 Z14 Z10 Z11 Z12 2 1 DUT 3 C4 C6 C5 C7 PINS: 1. DRAIN 2. GATE 3. SOURCE Z15 C2 C3 C16 C15 Z2 Z4 C1 Z5 Z6 Z7 Z8 R1 Z18 Z17 Z16 FB1 Z22 Z19 Z20 C18 Z21 RF OUTPUT C20 C21 C22 C23 C24 C25 A. Schematic Parts List: Microstrip line: Z1 0.670 in. x 0.066 in.; Z2 0.035 in. x 0.066 in.; Z3 0.297 in. x 0.050 in.; Z4 0.069 in. x 0.066 in.; Z5 0.538 in. x 0.066 in.; Z6 0.050 in. x 0.150 in.; Z7 0.797 in. x 0.150 in.; Z8 0.050 in. x 0.440 in.; Z9 0.299 in. x 0.440 in.; Z10 0.050 in. x 0.440 in.; Z11 0.050 in. x 0.440 in.; Z12 0.494 in. x 0.440 in.; Z13 1.024 in. x 0.050 in.; Z14 0.093 in. x 0.300 in.; Z15 0.050 in. x 0.300 in.; Z16 0.214 in. x 0.300 in.; Z17 0.050 in. x 0.300 in.; Z18 0.396 in. x 0.300 in.; Z19 0.050 x 0.300; Z20 0.808 in. x 0.066 in.; Z21 0.881 in. x 0.066 in.; Z22 2.048 in. x 0.050 in. ATC ® chip capacitor: C1, C8, C18, C19: 47 pF, 100B470JW; C2: 3.3 pF, 100B3R3BW; C3: 5.6 pF, 100B5R6BW; C4, C5, C6, C7: 12 pF, 100B120JW; C9, C16, C20: 10 pF, 100B100JW; C15: 1.8 pF, 100B1R8BW; C17: 6.8 pF, 100B6R8BW; C27: 8.2 pF, 100A8R2BW. 1206 size 0.25 W, fixed film, chip resistors: R1: 50 , RM73B2B500J; R2: 43 k , RM73B2B433J; R3: 1 k , RM73B2B103J. Murata ® chip capacitor: C12, C23: 0.01 µ F, GRM40X7R103K100AL. 0603 chip capacitor: C10, C21: 220 pF. Sprague ® tantalum chip capacitor: C14, C25, C26: 22 µF, 35 V. Kreger® ferrite bead: FB1 2743D19447. Kemet ® chip capacitor: C13, C24: 0.10 µ F, C1206C104KRAC7800. Vitramon ® chip capacitor: C11, C22: 2200 pF, VJ1206Y222KXA. Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout Figure 2. AGR09045E Test Circuit 3 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0. 11 0.1 0.4 110 0.12 0.38 0.13 0.37 0. 14 0. 36 0.15 0.35 0.9 0. 6 60 2 0. 4 0 12 7 0. 0 65 0. 5 3 0. 4 0 13 0. 06 0. 44 70 0. 0 5 0. 4 5 75 EN T (+ jX / Z , o) 14 0 O R P CA AC IT I VE S SU CE PT AN CE ) / Yo ( +jB 0.7 0. 2 0.4 0. 0 4 0. 4 6 15 0 EC OM PO N 0. 6 R— > 80 TO TA NC 0. 8 ERA 0.47 RE AC 1. 0 1. 0 GEN 160 85 ARD UCT IV E TOW 0.48 90 IN D GTH S 170 0.0 —> W A V E L E N 0.49 ± 180 Z0 = 7 0.0 ZS f1 0. 1 -90 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 f1 L O A D