PD27025F

PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET Introduction The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for 2.5GHz - 2.7GHz Class AB wireless base station amplifier applications. This d evice is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of deliver ing a minimum output power of 25 W, it is ideally suited for today's RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym R JC Value 2.1 Unit °C /W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Derate Above 70 ° C: Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, +15 ID 4.25 83.5 — TJ 0.48 200 Unit Vdc Vdc Adc W W/°C °C Total Dissipation at TC = 70 °C : PD TSTG –65, +150 °C PD27025F (flanged) Figure 1. Available Packages Features * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. • Application Specific Performance, 2.7 GHz Typical 2-Tone Performance Average Load Power – 12.5 W ηD – 30% Power Gain – 11.5 dB IMD3: -30dBc @ -100kHz/ +100KHz Table 3. ESD Rating* HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 • • Typical CW Performance Average Load Power – 25 W ηD – 38% Power Gain – 11.0 dB * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Drain-source Breakdown Voltage (VGS = 0, ID = 100 u A ) Gate-source Leakage Current (VGS =15V, VDS = 0 V) Off Characteristics Symbol V(BR)DSS IGSS IDSS Gm Min 65 — — 1 — — Typ — M ax — Unit Vdc Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) Forward Transconductance (VDS = 10 V, ID = 1.0 A) Gate Threshold Voltage (VDS = 10 V, ID = 1 m A ) Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) Table 5. RF Characteristics Rating Input capacitance * (including matching capacitor) (VDS=28V, VGS=0V, f = 1MHz) Output capacitance * (including matching capacitor) (VDS= 28V, VGS=0V, f = 1MHz) Feedback capacitance * (VDS=28V, VGS=0V, f = 1MHz) * Part is internally matched on input and output. Symbol C IS S C OSS C R SS — — 3 On Characteristics 1.0 — 1.0 m Adc S µAdc Gate Quiescent Voltage (VDS = 28 V, IDQ = 330 mA) VGS(TH) VDS(ON) VGS(Q) 3.0 3.5 4.0 — 0.33 — 5.0 Vdc Vdc Vdc Min - Typ 74 352 1.6 Max - Unit pF pF pF RF and Functional Tests Rating (In Broadband Fixture, Tc=25° C unless otherwise specified) CW Low Power Gain, Pout=8W VDD=28V, IDQ=330mA, f=2700MHz CW Power Gain, Pout = 25 W VDD=28V, IDQ=330mA, f=2700MHz CW Drain Efficiency, Pout = 25 W , VDD=28V, IDQ=330mA, f=2700MHz Two-Tone Common-Source Amplifier Power Gain VDD=28V, IDQ=330mA, Pout = 25 W PEP f1 =2700 MHz and f2=2700.1 MHz Two-Tone Intermodulation Distortion VDD=28V, IDQ=330mA, Pout = 25 W PEP f1 =2700 MHz and f2=2700.1 MHz Two-Tone Drain Efficiency VDD=28V, IDQ=330mA, Pout = 25 W PEP f1 =2700 MHz and f2=7500.1 MHz Input Return Loss VDD =28V, Pout = 25 W PEP, IDQ=330mA f1 =2500 MHz and 2700 MHz, Tone Spacing = 100kHz Load Mismatch Tolerance VDS=28V, IDQ= 330 mA, Pout=25W , f=2500 MHz Symbol GL GP ηD G TT IMD ηD 2 Τ IRL VSW R Min 12.5 12 35 12.5 26 10:1 Typ 40 -30 30 - Max 28 -9 - Unit dB dB % dB dBc % dB Ψ 2 PD27025F N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. 1 PEAK DEVICES PD27025F XXXX 3 1 3 2 2 PINS: 1. DRAIN 2. GATE 3. SOURCE XXXX - 4 Digit Trace Code PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET RF Power Product Information For product and application information, please visit our website: WWW.PEAKDEVICES.COM AT C is a registered trademark of American Technical Ceramics Corp. K e me t is a registered trademark of KRC Trade Corporation. S pra gue is a registered trademark of Sprague Electric Company Corporation. M ura ta is a registered trademark of Murata Electronics North America, Inc. K re ge r is a registered trademark of Kreger Components, Inc. V itra mon is a registered trademark of Vitramon Incorporated. Ta c onic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.