EK42020-02

PE42020 Product Specification UltraCMOS® True DC RF Switch, 0 Hz–8000 MHz Features Figure 1 • PE42020 Functional Diagram • High power handling ▪ 30 dBm @ DC RFC ▪ 36 dBm @ 8 GHz • Maximum voltage (DC or AC peak): ±10V on the RF ports RF1 • Total harmonic distortion (THD): –84 dBc RF2 • Configurable 50Ω absorptive or open reflective switch via a single pin (LZ) 50Ω 50Ω • Packaging – 20-lead 4 × 4 mm QFN DC Tracking Applications CMOS Control Driver and ESD • Test and measurement ▪ Signal sources LZ LS CTRL VDD VSS ▪ Communication testers ▪ Spectrum analyzers ▪ Network analyzers • Automated test equipment ▪ Complex combination of DC + RF/analog and digital signals Product Description The PE42020 is a HaRP™ technology-enhanced SPDT True DC RF switch that operates from zero Hertz up to 8 GHz with integrated RF, analog and digital functions. The PE42020 can accommodate up to ±10V input DC voltage on the RF ports. It can be configured as a 50Ω absorptive or an open reflective True DC switch via the single LZ pin. The PE42020 True DC RF switch delivers excellent RF performance and high power handling down to zero Hertz, making this device ideal for handling the complex combination of DC, RF/analog and digital signals in test and measurement (T&M) and automated test equipment (ATE) applications. The PE42020 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. Peregrine’s HaRP™ technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. ©2014 – 2017, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 • Absolute Maximum Ratings for PE42020 Parameter/Condition Min Max Unit Positive supply voltage, VDD 10 17 V Negative supply voltage, VSS –17 –10 V Digital input voltage (CTRL, LS, LZ) –0.3 3.6 V Fig. 2–Fig. 5 38 dBm dBm +150 °C ESD voltage HBM, all pins(1) 1000 V ESD voltage MM, all pins(2) 150 V ESD voltage CDM, all pins(3) 1000 V RF input power (RFC–RFX), 50Ω 0–40 MHz ≥40–8000 MHz Storage temperature range –65 Notes: 1) Human body model (MIL-STD 883 Method 3015). 2) Machine model (JEDEC JESD22-A115). 3) Charged device model (JEDEC JESD22-C101). Page 2 DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Recommended Operating Conditions Table 2 list the recommending operating condition for PE42020. Devices should not be operated outside the recommended operating conditions listed below. Table 2 • Recommended Operating Conditions for PE42020 Parameter Min Typ Max Unit Positive supply voltage, VDD(1) 11 15 V Negative supply voltage, VSS(1) –15 –11 V 3.9 mA Positive supply current, IDD Negative supply current, ISS –3.8 Digital input high (CTRL, LS, LZ) 1.17 3.6 V Digital input low (CTRL, LS, LZ) –0.3 0.6 V RF input power, CW (RFC–RFX)(2) Fig. 2–Fig. 5 dBm RF input power, pulsed (RFC–RFX)(3) Fig. 2–Fig. 5 dBm Fig. 6 dBm –7 –10 +7 +10 V V –7 –10 Fig. 2–Fig. 5 +7 +10 Fig. 2–Fig. 5 V V V 80 mA +85 °C mA RF input power into terminated ports, CW (RFX)(2) Max DC bias voltage at RF ports VDD = +11V, VSS = –11V, ≥ 0 °C VDD = +15V, VSS = –15V, ≥ 0 °C Max voltage 0–2 MHz (VDD = +11V, VSS = –11V, ≥ 0 °C) 0–2 MHz (VDD = +15V, VSS = –15V, ≥ 0 °C) 2–8000 MHz DC current through RF active ports Operating temperature range –40 +25 Notes: 1) To maintain proper operation of the PE42020, a mismatch between VDD and VSS should not exceed a maximum of 8%. A large mismatch will result in distortion appearing at the RF output at low frequencies. For example, VDD = +13.85V, VSS = –15V represents an 8% mismatch. |13.85-15| / (13.85+15) / 2*100 = 8%. 2) 100% duty cycle, all bands 50Ω. 3) Pulsed, 5% duty cycle of 4620 µs period, 50Ω. DOC-23814-4 – (7/2017) Page 3 www.psemi.com PE42020 UltraCMOS® True DC RF Switch Electrical Specifications Table 3 provides the PE42020 key electrical specifications @ 25 °C, V DD = +15V, VSS = –15V, LZ = 0 (absorptive), 0 VDC at RF ports (ZS = ZL = 50Ω), unless otherwise specified. Table 3 • PE42020 Electrical Specifications(1) Parameter Path Condition Operating frequency Insertion loss Min Typ 0 Hz Max Unit 8 GHz As shown 0.70 1.00 1.30 1.35 dB dB dB dB RFC–RFX 0 Hz 0–3 GHz 3–6 GHz 6–8 GHz RFX–RFX 0–3 GHz 3–6 GHz 6–8 GHz 52 38 30 56 42 34 dB dB dB RFC–RFX 0–3 GHz 3–6 GHz 6–8 GHz 46 35 31 48 37 34 dB dB dB RFC–RFX 0–3 GHz 3–6 GHz 6–8 GHz 20 18 15 dB dB dB RFX 0–3 GHz 3–6 GHz 6–8 GHz 23 17 16 dB dB dB 1 kHz (2.5 VPP into 300Ω load) –84 dBc 0.60 0.85 1.00 1.10 Isolation Return loss (active and RFC ports) Return loss (terminated port) Total harmonic distortion Input 0.1dB compression point(2) RFC–RFX 40 MHz–8 GHz 38 dBm Input IP2 RFC–RFX 836 MHz, 1900 MHz 2.7 GHz 4.8 GHz 115 105 90 dBm dBm dBm RFC–RFX 836 MHz, 1900 MHz 2.7 GHz 4.8 GHz 62 61 55 dBm dBm dBm Settling time 50% CTRL to 0.05 dB finallue 35 45 µs Switching time 50% CTRL to 90% or 10% RF 10 14 µs Input IP3 Notes: 1) Device is linear down to 0 Hz. 2) The input 0.1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω). Page 4 DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Table 4 provides the PE42020 key electrical specifications @ 25 °C, VDD = +15V, VSS = –15V, LZ = 1 (open reflective), 0 VDC at RF ports (ZS = ZL = 50Ω), unless otherwise specified. Table 4 • PE42020 Electrical Specifications(1) Parameter Path Condition Operating frequency Insertion loss Min Typ 0 Hz Max Unit 8 GHz As shown 0.75 1.00 1.25 1.35 dB dB dB dB RFC–RFX 0 Hz 0–3 GHz 3–6 GHz 6–8 GHz RFX–RFX 0–3 GHz 3–6 GHz 6–8 GHz 35 29 25 37 31 27 dB dB dB RFC–RFX 0–3 GHz 3–6 GHz 6–8 GHz 34 27 21 36 29 24 dB dB dB RFC–RFX 0–3 GHz 3–6 GHz 6–8 GHz 20 19 15 dB dB dB 1 kHz (2.5 VPP into 300Ω load) –84 dBc 0.60 0.85 1.00 1.10 Isolation Return loss (active and RFC ports) Total harmonic distortion Input 0.1dB compression point(2) RFC–RFX 40 MHz–8 GHz 38 dBm Input IP2 RFC–RFX 836 MHz, 1900 MHz 2.7 MHz 4.8 MHz 115 105 90 dBm dBm dBm Input IP3 RFC–RFX 836 MHz, 1900 MHz 2.7 MHz 4.8 MHz 62 61 55 dBm dBm dBm Settling time 50% CTRL to 0.05 dB final value 35 45 µs Switching time 50% CTRL to 90% or 10% RF 10 14 µs Notes: 1) Device is linear down to 0 Hz. 2) The input 0.1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω). DOC-23814-4 – (7/2017) Page 5 www.psemi.com PE42020 UltraCMOS® True DC RF Switch Power-up/Power-down Sequence Hot-switching Capability The following power-up/power-down sequence must be followed. Failure to follow this sequence will cause permanent damage to the device. The maximum hot switching capability of the PE42020 is 27 dBm at VDD = +15V and VSS = –15V; 24 dBm at VDD = +11V and VSS = –11V. Hot switching occurs when RF power is applied while switching between RF ports. • During the power-up sequence, VSS must be turned on before VDD. • During the power-down sequence, VDD must be turned off before VSS. Control Logic It is recommended to turn on VDD within 1 second of turning on VSS during the power-up sequence and turn off VSS within 1 second of turning off VDD during the power-down sequence. The device is not sensitive to the timing and level of the control voltages. Table 5 provides the control logic truth table for the PE42020. Table 5 • Control Logic Truth Table for PE42020 LS CTRL LZ(*) RFC–RF1 RFC–RF2 Off Port Terminated 0 0 0 OFF ON Yes 0 0 1 OFF ON No (High–Z) 0 1 0 ON OFF Yes 0 1 1 ON OFF No (High–Z) 1 0 0 ON OFF Yes 1 0 1 ON OFF No (High–Z) 1 1 0 OFF ON Yes 1 1 1 OFF ON No (High–Z) Note: * If LZ is pulled high, the part is configured as an open reflective switch. Page 6 DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 2 • Power De-rating Curve for 0 Hz–8 GHz, VDD = +15V, VSS = –15V, 0 VDC,–40 to 0 °C, 50Ω Max. RF Input Power, Pulsed (≥ 40 MHz, -40°C to 0°C Ambient, VDD = +15V, VSS = -15V) Max. RF Input Power, CW (≥ 40 MHz, -40°C to 0°C Ambient, VDD = +15V, VSS = -15V) Max. RF Input Power, CW & Pulsed (< 40 MHz, -40°C to 0°C Ambient, VDD = +15V, VSS = -15V) 38 37 Input Power (dBm) 36 35 34 33 32 31 30 29 28 27 26 0 1 10 100 1000 10000 Frequency (MHz) Figure 3 • Power De-rating Curve for 0 Hz–8 GHz, VDD = +15V, VSS = –15V, 0 VDC, 0–85 °C, 50Ω Max. RF Input Power, Pulsed (≥ 20 MHz, 0°C to +85°C Ambient, VDD = +15V, VSS = -15V) Max. RF Input Power, CW (≥ 20 MHz, 0°C to +85°C Ambient, VDD = +15V, VSS = -15V) Max. RF Input Power, CW & Pulsed (< 20 MHz, 0°C to +85°C Ambient, VDD = +15V, VSS = -15V) 38 37 Input Power (dBm) 36 35 34 33 32 31 30 29 28 27 26 0 1 10 100 1000 10000 Frequency (MHz) DOC-23814-4 – (7/2017) Page 7 www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 4 • Power De-rating Curve for 0 Hz–8 GHz, VDD = +11V, VSS = –11V, 0 VDC, –40 to 0 °C, 50Ω Max. RF Input Power, Pulsed (≥ 40 MHz, -40°C to 0°C Ambient, VDD = +11V, VSS = -11V) Max. RF Input Power, CW (≥ 40 MHz, -40°C to 0°C Ambient, VDD = +11V, VSS = -11V) Input Power (dBm) Max. RF Input Power, CW & Pulsed (< 40 MHz, -40°C to 0°C Ambient, VDD = +11V, VSS = -11V) 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 0 1 10 100 1000 10000 Frequency (MHz) Figure 5 • Power De-rating Curve for 0 Hz–8 GHz, VDD = +11V, VSS = –11V, 0 VDC, 0–85 °C, 50Ω Max. RF Input Power, Pulsed (≥ 30 MHz, 0°C to +85°C Ambient, VDD = +11V, VSS = -11V) Max. RF Input Power, CW (≥ 30 MHz, 0°C to +85°C Ambient, VDD = +11V, VSS = -11V) Input Power (dBm) Max. RF Input Power, CW & Pulsed (< 30 MHz, 0°C to +85°C Ambient, VDD = +11V, VSS = -11V) 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 0 1 10 100 1000 10000 Frequency (MHz) Page 8 DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 6 • Power De-rating Curve for 0 Hz–8 GHz, Terminated Power, 0 VDC, –40 to 85 °C, 50Ω Max. RF Terminated Power, CW (-40°C to 85°C Ambient) 27 26 Input Power (dBm) 25 24 23 22 21 20 19 18 0 1 10 100 1000 10000 Frequency (MHz) DOC-23814-4 – (7/2017) Page 9 www.psemi.com PE42020 UltraCMOS® True DC RF Switch Performance Data Figure 7–Figure 28 show the performance data at 25 °C, VDD = +15V, VSS = –15V, 0 VDC, (ZS = ZL = 50Ω), unless otherwise specified. Figure 7 • Insertion Loss vs Temperature (RFC–RFX), LZ = 0 -40°C 25°C 85°C 0 Insertion Loss (dB) -1 -2 -3 -4 -5 0 1 2 3 4 5 6 7 8 6 7 8 Frequency (GHz) Figure 8 • Insertion Loss vs Temperature (RFC–RFX), LZ = 1 -40°C 25°C 85°C 0 Insertion Loss (dB) -1 -2 -3 -4 -5 0 1 2 3 4 5 Frequency (GHz) Page 10 DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 9 • Insertion Loss vs VDD/VSS (RFC–RFX), LZ = 0 +11V/–11V +13.5V/–13.5V +15V/–15V 0 Insertion Loss (dB) -1 -2 -3 -4 -5 0 1 2 3 4 5 6 7 8 7 8 Frequency (GHz) Figure 10 • Insertion Loss vs VDD/VSS (RFC–RFX), LZ = 1 +11V/–11V +13.5V/–13.5V +15V/–15V 0 Insertion Loss (dB) -1 -2 -3 -4 -5 0 1 2 3 4 5 6 Frequency (GHz) DOC-23814-4 – (7/2017) Page 11 www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 11 • RFC Port Return Loss vs Temperature, LZ = 0 -40°C 25°C 85°C 0 -5 Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 0 1 2 3 4 5 6 7 8 6 7 8 Frequency (GHz) Figure 12 • RFC Port Return Loss vs Temperature, LZ = 1 -40°C 25°C 85°C 0 -5 Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 0 1 2 3 4 5 Frequency (GHz) Page 12 DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 13 • RFC Port Return Loss vs VDD/VSS, LZ = 0 +11V/–11V +13.5V/–13.5V +15V/–15V 0 -5 Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 0 1 2 3 4 5 6 7 8 7 8 Frequency (GHz) Figure 14 • RFC Port Return Loss vs VDD/VSS, LZ = 1 +11V/–11V +13.5V/–13.5V +15V/–15V 0 -5 Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 0 1 2 3 4 5 6 Frequency (GHz) DOC-23814-4 – (7/2017) Page 13 www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 15 • Active Port Return Loss vs Temperature, LZ = 0 -40°C 25°C 85°C 0 -5 Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 0 1 2 3 4 5 6 7 8 6 7 8 Frequency (GHz) Figure 16 • Active Port Return Loss vs Temperature, LZ = 1 -40°C 25°C 85°C 0 -5 Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 0 1 2 3 4 5 Frequency (GHz) Page 14 DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 17 • Active Port Return Loss vs VDD/VSS, LZ = 0 +11V/–11V +13.5V/–13.5V +15V/–15V 0 -5 Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 0 1 2 3 4 5 6 7 8 7 8 Frequency (GHz) Figure 18 • Active Port Return Loss vs VDD/VSS, LZ = 1 +11V/–11V +13.5V/–13.5V +15V/–15V 0 -5 Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 0 1 2 3 4 5 6 Frequency (GHz) DOC-23814-4 – (7/2017) Page 15 www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 19 • Terminated Port Return Loss vs Temperature, LZ = 0 -40°C 25°C 85°C 0 -5 Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 0 1 2 3 4 5 6 7 8 7 8 Frequency (GHz) Figure 20 • Terminated Port Return Loss vs VDD/VSS, LZ = 0 +11V/–11V +13.5V/–13.5V +15V/–15V 0 -5 Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 0 1 2 3 4 5 6 Frequency (GHz) Page 16 DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 21 • Isolation vs Temperature (RFX–RFX), LZ = 0 -40°C 25°C 85°C 0 Isolation (dB) -20 -40 -60 -80 -100 -120 0 1 2 3 4 5 6 7 8 6 7 8 Frequency (GHz) Figure 22 • Isolation vs Temperature (RFX–RFX), LZ = 1 -40°C 25°C 85°C 0 Isolation (dB) -20 -40 -60 -80 -100 -120 0 1 2 3 4 5 Frequency (GHz) DOC-23814-4 – (7/2017) Page 17 www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 23 • Isolation vs VDD/VSS (RFX–RFX), LZ = 0 +11V/–11V +13.5V/–13.5V +15V/–15V 0 Isolation (dB) -20 -40 -60 -80 -100 -120 0 1 2 3 4 5 6 7 8 7 8 Frequency (GHz) Figure 24 • Isolation vs VDD/VSS (RFX–RFX), LZ = 1 +11V/–11V +13.5V/–13.5V +15V/–15V 0 Isolation (dB) -20 -40 -60 -80 -100 -120 0 1 2 3 4 5 6 Frequency (GHz) Page 18 DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 25 • Isolation vs Temperature (RFC–RFX), LZ = 0 -40°C 25°C 85°C 0 Isolation (dB) -20 -40 -60 -80 -100 -120 0 1 2 3 4 5 6 7 8 6 7 8 Frequency (GHz) Figure 26 • Isolation vs Temperature (RFC–RFX), LZ = 1 -40°C 25°C 85°C 0 Isolation (dB) -20 -40 -60 -80 -100 -120 0 1 2 3 4 5 Frequency (GHz) DOC-23814-4 – (7/2017) Page 19 www.psemi.com PE42020 UltraCMOS® True DC RF Switch Figure 27 • Isolation vs VDD/VSS (RFC–RFX), LZ = 0 +11V/–11V +13.5V/–13.5V +15V/–15V 0 Isolation (dB) -20 -40 -60 -80 -100 -120 0 1 2 3 4 5 6 7 8 7 8 Frequency (GHz) Figure 28 • Isolation vs VDD/VSS (RFC–RFX), LZ = 1 +11V/–11V +13.5V/–13.5V +15V/–15V 0 Isolation (dB) -20 -40 -60 -80 -100 -120 0 1 2 3 4 5 6 Frequency (GHz) Page 20 DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Evaluation Kit The SPDT switch evaluation board was designed to ease customer evaluation of Peregrine's PE42020. The RF common port is connected through a 50Ω transmission line via the SMA connector, J3. RF1 and RF2 ports are connected through 50Ω transmission lines via SMA connectors J1 and J2 respectively. A 50Ω through transmission line is available via SMA connectors J5 and J6, which can be used to de-embed the loss of the PCB. J4 provides DC and digital inputs to the device. The board is constructed of a four metal layer material with a total thickness of 62 mils. The top RF layer is Rogers 4350B material with a thickness of 6.6 mils and the Ɛr = 3.66. The middle layers provide ground for the transmission lines. The transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 13 mils, trace gaps of 10.5 mils and metal thickness of 3.4 mils. For the true performance of the PE42020 to be realized, the PCB must be designed in such a way that RF transmission lines and sensitive DC I/O traces are well isolated from one another. Figure 29 • Evaluation Kit Layout for PE42020 DOC-23814-4 – (7/2017) Page 21 www.psemi.com PE42020 UltraCMOS® True DC RF Switch Pin Information Table 6 • Pin Descriptions for PE42020 This section provides pinout information for the PE42020. Figure 30 shows the pin map of this device for the available package. Table 6 provides a description for each pin. VDD LS CTRL LZ VSS 19 18 17 16 Pin 1 Dot Marking 20 Figure 30 • Pin Configuration (Top View) Pin No. Pin Name 1–3, 5–7, 9–11, 13– 15 GND(*) 4 RF1 RF port 1. 8 RFC RF common. 12 RF2 RF port 2. 16 VSS Negative supply voltage. High impedence mode. Description Ground. GND 1 15 GND 17 LZ GND 2 14 GND 18 CTRL GND 3 13 GND 19 LS Logic Select–used to determine the definition for the CTRL pin (see Table 5). 20 VDD Positive supply voltage. Pad GND Exposed pad: ground for proper operation. Exposed Ground Pad 9 10 GND GND GND 11 8 5 RFC GND 7 RF2 GND 12 6 4 GND RF1 Digital control logic input for selecting ON path (see Table 5). Note: * Ground connection. traces should be physically short and connected to the ground plane. This pin is connected to the exposed solder pad that also must be soldered to the ground plane for best performance. Page 22 DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Packaging Information This section provides packaging data including the moisture sensitivity level, package drawing, package marking and tape-and-reel information. Moisture Sensitivity Level The moisture sensitivity level rating for the PE42020 in the 20-lead 4 × 4 mm QFN package is MSL3. Package Drawing Figure 31 • Package Mechanical Drawing for 20-lead 4 × 4 × 0.85 mm QFN 0.10 C 4.00 A (2X) 2.15±0.05 0.28 (x20) 0.55±0.05 (x20) B 11 15 0.75 (x20) 0.50 10 16 2.15±0.05 4.00 6 5 (2X) 0.18 0.18 TOP VIEW 4.40 1 2.00 Pin #1 Corner 2.20 20 0.23±0.05 (x20) 0.10 C 0.50 BOTTOM VIEW 0.435 SQ REF 2.20 4.40 RECOMMENDED LAND PATTERN 0.10 C 0.10 0.05 0.85±0.05 0.05 C C A B C ALL FEATURES SEATING PLANE 0.203 SIDE VIEW 0.05 C Top-Marking Specification Figure 32 • Package Marking Specifications for PE42020 42020 YYWW ZZZZZZ = Pin 1 indicator YY = Last two digits of assembly year WW = Assembly work week ZZZZZZ = Assembly lot code (maximum six characters) DOC-23814-4 – (7/2017) Page 23 www.psemi.com PE42020 UltraCMOS® True DC RF Switch Tape and Reel Specification Figure 33 • Tape and Reel Specifications for 20-lead 4 × 4 × 0.85 mm QFN Direction of Feed Section A-A P1 P0 see note 1 T P2 see note 3 D1 D0 A E F see note 3 B0 A0 K0 A0 B0 K0 D0 D1 E F P0 P1 P2 T W0 4.35 4.35 1.10 1.50 + 0.10/ -0.00 1.50 min 1.75 ± 0.10 5.50 ± 0.05 4.00 8.00 2.00 ± 0.05 0.30 ± 0.05 12.00 ± 0.30 A W0 Pin 1 Notes: 1. 10 Sprocket hole pitch cumulative tolerance ±0.2 2. Camber in compliance with EIA 481 3. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole Dimensions are in millimeters unless otherwise specified Page 24 Device Orientation in Tape DOC-23814-4 – (7/2017) www.psemi.com PE42020 UltraCMOS® True DC RF Switch Ordering Information Table 7 lists the available ordering codes for the PE42020 as well as the available shipping methods. Table 7 • Order Codes for PE42020 Order Codes Description Packaging Shipping Method PE42020A-X PE42020 SPDT True DC RF Switch Green 20-lead 4 × 4 mm QFN 500 units / T&R EK42020-02 PE42020 Evaluation kit Evaluation kit 1 / Box Document Categories Advance Information The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and features may change in any manner without notice. Preliminary Specification The datasheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The datasheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a CNF (Customer Notification Form). Sales Contact For additional information, contact Sales at sales@psemi.com. Disclaimers The information in this document is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party. Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. Patent Statement Peregrine products are protected under one or more of the following U.S. patents: patents.psemi.com Copyright and Trademark ©2014 – 2017, Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo, UTSi and UltraCMOS are registered trademarks and HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp. Product Specification www.psemi.com DOC-23814-4 – (7/2017)