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EK42442-01

EK42442-01

  • 厂商:

    PEREGRINE(游隼半导体)

  • 封装:

    -

  • 描述:

    KIT EVAL FOR RF SWITCH

  • 详情介绍
  • 数据手册
  • 价格&库存
EK42442-01 数据手册
Product Specification PE42442 UltraCMOS® SP4T RF Switch 30 MHz–6 GHz Product Description The PE42442 is a HaRP™ technology-enhanced absorptive SP4T RF switch designed for use in 3G/4G wireless infrastructure and other high performance RF applications. This switch is a pin-compatible four throw version of the PE42451 with a wider frequency and power supply range. It is comprised of four symmetric RF ports with very high isolation up to 6 GHz. An integrated CMOS decoder facilitates a two- or three-pin 1.8V CMOS control interface. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports. The PE42442 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Features  Four symmetric, absorptive RF ports  High isolation  61 dB @ 900 MHz  55 dB @ 2100 MHz  52 dB @ 2700 MHz  43 dB @ 4000 MHz  32 dB @ 6000 MHz  High linearity  IIP2 of 97 dBm  IIP3 of 58 dBm  1.8V control logic compatible  125 °C operating temperature  Fast switching time of 255 ns  Two- or three-pin CMOS logic control  External negative supply option  ESD performance  4 kV HBM on RF pins to GND  2 kV HBM on all pins Figure 1. Functional Diagram Figure 2. Package Type 24-lead 4  4 mm QFN DOC-59069 Document No. DOC-33414-8 │ www.psemi.com ©2013-2021 pSemi Corporation All rights reserved. Page 1 of 11 PE42442 Product Specification Table 1. Electrical Specifications @ +25 °C (ZS = ZL = 50Ω) unless otherwise noted Normal mode1: VDD = 3.3V, VSS_EXT = 0V or Bypass mode2: VDD = 3.3V, VSS_EXT = –3.3V Parameter Path Condition Min Operating frequency Insertion loss Isolation Isolation Typ 30 0.85 0.90 1.10 1.15 1.25 1.90 Max Unit 6000 MHz 1.00 1.05 1.35 1.40 1.50 2.35 dB dB dB dB dB RFC–RFX 450 MHz 900 MHz 2100 MHz 2700 MHz 4000 MHz 6000 MHz RFC–RFX 450 MHz 900 MHz 2100 MHz 2700 MHz 4000 MHz 6000 MHz 62 55 52 50 42 27 67 61 55 52 43 32 dB dB dB dB dB RFX–RFX 450 MHz 900 MHz 2100 MHz 2700 MHz 4000 MHz 6000 MHz 61 56 51 50 41 29 65 61 54 52 44 32 dB dB dB dB dB Return loss (active port) RFX 30–4000 MHz 4000–6000 MHz 17 12 dB dB Return loss (terminated port) RFX 30–4000 MHz 4000–6000 MHz 22 19 dB dB Input 0.1 dB compression point3 RFC–RFX 900 MHz 35 dBm Input IP2 RFC–RFX 1900 MHz 97 dBm Input IP3 RFC–RFX 1900 MHz 58 dBm 50% control to 90% or 10% RF 255 Switching time 330 ns Notes: 1. Normal mode: single external positive supply used. 2. Bypass mode: both external positive supply and external negative supply used. 3. The input 0.1 dB compression point is a linearity figure of merit. Refer to Table 4 for the operating RF input power (50Ω). ©2013-2021 pSemi Corporation All rights reserved. Page 2 of 11 Document No. DOC-33414-8 │ UltraCMOS® RFIC Solutions PE42442 Product Specification Table 2. Electrical Specifications @ +125 °C (ZS = ZL = 50Ω) unless otherwise noted Normal mode1: VDD = 3.3V, VSS_EXT = 0V or Bypass mode2: VDD = 3.3V, VSS_EXT = –3.3V Parameter Path Condition Min Operating frequency Insertion loss Isolation Isolation Typ 30 1.11 1.18 1.43 1.50 1.59 2.28 Max Unit 6000 MHz 1.38 1.45 1.79 1.95 2.04 2.91 dB dB dB dB dB dB RFC–RFX 450 MHz 900 MHz 2100 MHz 2700 MHz 4000 MHz 6000 MHz RFC–RFX 450 MHz 900 MHz 2100 MHz 2700 MHz 4000 MHz 6000 MHz 56 54 49 46 33 23 66 60 55 52 43 32 dB dB dB dB dB dB RFX–RFX 450 MHz 900 MHz 2100 MHz 2700 MHz 4000 MHz 6000 MHz 59 54 50 49 39 26 65 61 53 52 43 32 dB dB dB dB dB dB Return loss (active port) RFX 30–4000 MHz 4000–6000 MHz 16 13 dB dB Return loss (terminated port) RFX 30–4000 MHz 4000–6000 MHz 17 15 dB dB Input 0.1 dB compression point3 RFC–RFX 900 MHz 35 dBm Input IP2 RFC–RFX 1900 MHz 91 dBm Input IP3 RFC–RFX 1900 MHz 56 dBm 50% control to 90% or 10% RF 355 Switching time 439 ns Notes: 1. Normal mode: single external positive supply used. 2. Bypass mode: both external positive supply and external negative supply used. 3. The input 0.1 dB compression point is a linearity figure of merit. Refer to Table 4 for the operating RF input power (50Ω). ©2013-2021 pSemi Corporation All rights reserved. Page 3 of 11 Document No. DOC-33414-8 │ UltraCMOS® RFIC Solutions PE42442 Product Specification Symbol Min V3 Table 4. Operating Ranges Normal mode 19 VssEXT 20 GND 21 RFC 22 GND 23 24 GND Figure 3. Pin Configuration (Top View) Parameter Supply voltage VDD 2.3 Supply current IDD Typ Max Unit 5.5 V 1 110 µA Bypass mode 2 Supply voltage VDD Supply current IDD Negative supply voltage 2.7 5.5 50 V µA VSS_EXT –3.6 –3.2 V Digital input high (V1, V2, V3) VIH 1.17 3.6 V Digital input low (V1, V2, V3) VIL –0.3 0.6 V 12 GND 11 RF2 10 GND 9 GND 8 RF3 GND 7 Normal or Bypass mode Table 3. Pin Descriptions ICTRL 1 µA RF input power, CW P +105 °C 33 dBm MAX,CW Pin # Name 1-3, 4, 6, 7, 9, 10, 12, 13, 15, 21, 23, 24 GND Ground RF input power, CW P +125 °C 28 dBm 5 RF41 RF port 4 RF input power into terminated ports, CW P +105 °C 24 dBm 8 RF31 RF port 3 11 RF21 RF port 2 RF input power into terminated ports, CW P +125 °C 20 dBm 14 RF11 RF port 1 +125 °C 16 VDD Supply voltage 17 V1 Digital control logic input 1 18 V2 Digital control logic input 2 19 V3 Digital control logic input 3 20 VSS_EXT3 22 RFC RF common Pad GND Exposed pad: Ground for proper operation 2 1 Description Digital input current3 External Vss negative voltage control/ ground Notes: 1. RF pins 5, 8, 11, 14 and 22 must be at 0 VDC. The RF pins do not require DC blocking capacitors for proper operation if the 0 VDC requirement is met. 2. Pin 19 must be grounded for 2-pin control, refer to Table 5A. 3. Use VSS_EXT (pin 20, refer to Table 3) to bypass and disable internal Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. MAX,CW MAX,TERM Operating temperature range Notes: MAX,TERM TOP –40 1. Normal mode: connect pin 20 to GND to enable internal negative voltage generator. 2. Bypass mode: apply a negative voltage to VSS_EXT (pin 20) to bypass and disable internal negative voltage generator. 3. The pull-down resistor in the EVK schematic may increase control current. Table 5. Absolute Maximum Ratings Parameter/Condition Supply voltage Voltage on any DC input Symbol Min Max Unit VDD –0.3 5.5 V VI –0.3 3.6 V Maximum input power PMAX_ABS +105 °C 34 dBm Maximum input power PMAX_ABS +125 °C 28 dBm +150 °C Storage temperature range TST –65 ESD voltage HBM All pins RF pins to ground VESD_HBM 2.0 4.0 kV kV ESD voltage MM2, all pins VESD_MM 150 V ESD voltage CDM3, all pins VESD_CDM 250 V 1 Notes: 1. Human Body Model (MIL_STD 883 Method 3015) 2. Machine Model (JEDEC JESD22-A115) Document No. DOC-33414-8 │ www.psemi.com ©2013-2021 pSemi Corporation All rights reserved. Page 4 of 11 PE42442 Product Specification Electrostatic Discharge (ESD) Precautions Table 6. Truth Table (3-pin control)* When handling this UltraCMOS device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid Mode V3 V2 V1 Unsupported 0 0 0 RF1 on 0 0 1 RF2 on 0 1 0 RF3 on 0 1 1 RF4 on 1 0 0 Latch-Up Avoidance All off 1 0 1 Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. All off 1 1 0 Unsupported 1 1 1 Switching Frequency The PE42442 has a maximum 25 kHz switching rate in normal mode (pin 20 = GND). A faster switching rate is available in bypass mode (pin 20 = VSS_EXT ). The rate at which the PE42442 can be switched is then limited to the switching time as specified in Table 1. Switching frequency describes the time duration between switching events. Switching time is the time duration between the point the control signal reaches 50% of the final value and the point the output signal reaches within 10% or 90% of its Moisture Sensitivity Level The Moisture Sensitivity Level rating for the PE42442 in the 24-lead 4 4 mm QFN package is MSL1. Note: * 3-pin control intended for legacy product support to PE42450 and PE42451 or if All Off mode is required. Logic States 000 and 111 are unsupported and should not be used under any operating conditions. Table 6A. Truth Table (2-pin control1)2 Mode V2 V1 RF4 on 0 0 RF1 on 0 1 RF2 on 1 0 RF3 on 1 1 Notes: 1. Pin 19 = V3 must be grounded. 2. 2-pin control is recommended for new product designs if All Off mode is not required. Optional External VSS Control (VSS_EXT) For applications the require a faster switching rate or spur-free performance, this part can be operated in bypass mode. Bypass mode requires an external negative voltage in addition to an external VDD supply voltage. As specified in Table 3, the external negative voltage (VSS_EXT) when applied to pin 20 will disable and bypass the internal negative voltage Spurious Performance The typical low-frequency spurious performance of the PE42442 in normal mode is –120 dBm (pin 20 = GND). If spur-free performance is desired, the internal negative voltage generator can be disabled by applying a negative voltage to VSS_EXT (pin 20). ©2013-2021 pSemi Corporation All rights reserved. Page 5 of 11 Document No. DOC-33414-8 │ UltraCMOS® RFIC Solutions PE42442 Product Specification Typical Performance Data @ 25 °C and VDD = 3.3V unless otherwise noted Figure 4. Insertion Loss (All Paths) 0 Insertion Loss (dB) −0.5 −1 −1.5 −2 RF1 RF2 RF3 RF4 −2.5 −3 0 1 2 3 Frequency (GHz) 4 5 6 Figure 6. Insertion Loss vs VDD (RFC–RFX) 0 0 −0.5 −0.5 −1 −1 Insertion Loss (dB) Insertion Loss (dB) Figure 5. Insertion Loss vs Temp (RFC–RFX) −1.5 −2 − 40 C +25 C +85 C +105 C −2.5 −3 0 1 2 3 Frequency (GHz) 4 Document No. DOC-33414-8 │ www.psemi.com 5 −1.5 −2 −2.5 6 −3 0 2.3 V 3.3 V 5.5 V 1 2 3 Frequency (GHz) 4 5 6 ©2013-2021 pSemi Corporation All rights reserved. Page 6 of 11 PE42442 Product Specification Typical Performance Data @ 25 °C and VDD = 3.3V unless otherwise noted Figure 8. Isolation vs VDD (RFC–RFX) 0 0 −10 −10 −20 −20 −30 −30 Isolation (dB) Isolation (dB) Figure 7. Isolation vs Temp (RFC–RFX) −40 −50 −60 −70 − 40 C +25 C +85 C +105 C −80 1 2 3 Frequency (GHz) 4 5 −90 0 6 −10 −10 −20 −20 −30 −30 Isolation (dB) 0 −40 −50 2 3 Frequency (GHz) 4 5 6 −40 −50 −60 −60 −70 −70 − 40 C +25 C +85 C +105 C −80 1 2 3 Frequency (GHz) 4 ©2013-2021 pSemi Corporation All rights reserved. Page 7 of 11 1 Figure 10. Isolation vs VDD (RFX–RFX) 0 −90 0 2.3 V 3.3 V 5.5 V −80 Figure 9. Isolation vs Temp (RFX–RFX) Isolation (dB) −50 −60 −70 −90 0 −40 5 2.3 V 3.3 V 5.5 V −80 6 −90 0 1 2 3 Frequency (GHz) 4 5 6 Document No. DOC-33414-8 │ UltraCMOS® RFIC Solutions PE42442 Product Specification Typical Performance Data @ 25 °C and VDD = 3.3V unless otherwise noted Figure 12. Active Port Return Loss vs VDD 0 0 −5 −5 −10 −10 Return Loss (dB) Return Loss (dB) Figure 11. Active Port Return Loss vs Temp −15 −20 −20 − 40 C +25 C +85 C +105 C −25 −30 0 1 2 3 Frequency (GHz) 4 5 −25 −30 0 6 Figure 13. RFC Port Return Loss vs Temp 0 0 −5 −5 −10 −10 −15 1 2 3 Frequency (GHz) 4 5 6 −15 −20 −20 − 40 C +25 C +85 C +105 C −25 −30 0 2.3 V 3.3 V 5.5 V Figure 14. RFC Port Return Loss vs VDD Return Loss (dB) Return Loss (dB) −15 1 2 3 Frequency (GHz) 4 5 −25 −30 0 6 Figure 15. Return Loss (All Ports Terminated) 2.3 V 3.3 V 5.5 V 1 2 3 Frequency (GHz) 4 5 6 Figure 16. IIP3 vs Frequency 70 0 −5 60 −10 50 −20 IIP3(dBm) Return Loss (dB) −15 −25 −30 −35 30 20 −40 RF1 RF2 RF3 RF4 −45 −50 0 40 1 2 3 Frequency (GHz) 4 Document No. DOC-33414-8 │ www.psemi.com 5 RF1 RF2 10 RF3 RF4 6 0 0 1 2 3 Frequency (GHz) 4 5 6 ©2013-2021 pSemi Corporation All rights reserved. Page 8 of 11 PE42442 Product Specification Evaluation Kit Figure 17. Evaluation Board Layout The SP4T switch Evaluation Board was designed to ease customer evaluation of pSemi’s PE42442. The RF common port is connected through a 50Ω transmission line via the top SMA connector. RF1, RF2, RF3, and RF4 are connected through 50Ω transmission lines via side SMA connectors. A through 50Ω transmission is available via SMA connectors RFCAL1 and RFCAL2. This transmission line can be used to estimate the loss of the PCB over the environmental conditions being evaluated. The EVK board is constructed with four metal layers on dielectric materials of Rogers 4003C and 4450 with a total thickness of 32 mils. Layer 1 and layer 3 provide ground for the 50Ω transmission lines. The 50Ω transmission lines are designed in layer 2 for high isolation purpose and use a stripline waveguide design with a trace width of 9.4 mils and trace metal thickness of 1.8 mils. The board stack up for 50Ω transmission lines has 8 mil thickness of Rogers 4003C between layer 1 and layer 2, and 10 mil thickness of Rogers 4450 between layer 2 and layer 3. Please consult manufacturer's guidelines for proper board material properties in your application. The PCB should be designed in such a way that RF transmission lines and sensitive DC I/O traces such as VSS_EXT are heavily isolated from one another, otherwise the true performance of the PE42442 will not be yielded. ©2013-2021 pSemi Corporation All rights reserved. Page 9 of 11 DOC-59282 Document No. DOC-33414-8 │ UltraCMOS® RFIC Solutions PE42442 Product Specification Figure 18. Evaluation Board Schematic DOC-33427 Document No. DOC-33414-8 │ www.psemi.com ©2013-2021 pSemi Corporation All rights reserved. Page 10 of 11 PE42442 Product Specification Figure 19. Package Drawing   24-lead 4  4 mm QFN 0.10 C A 4.00 2.70±0.05 (2X) 0.40±0.05 (x24) B 0.50 (x20) 12 13 18 0.60 (x24) 0.30 (x24) 0.50 (x20) 19 4.00 2.70±0.05 2.75 0.25±0.05 (x24) 0.10 C 24 7 6 Chamfer 0.30 x 45° 1 (2X) 2.50 Ref. 2.75 4.40 Pin #1 Corner RECOMMENDED LAND PATTERN BOTTOM VIEW TOP VIEW 4.40 DOC-58197 0.10 C 0.75±0.05 0.05 C 0.10 0.05 C A B C ALL FEATURES SEATING PLANE 0.203 Ref. SIDE VIEW 0.05 C Figure 20. Marking Specifications 42442 YYWW ZZZZZ = Pin 1 designator YYWW = Date code ZZZZZ = Las five digits of the lot number DOC-51207 ©2013-2021 pSemi Corporation All rights reserved. Page 11 of 11 Document No. DOC-33414-8 │ UltraCMOS® RFIC Solutions PE42442 Product Specification Figure 21. Tape and Reel Drawing A0 = 4.35 B0 = 4.35 K0 = 1.1 Tape Feed Direction Pin 1 Top of Device Device Orientation in Tape Table 7. Ordering Information Ordering Code Description Package Shipping Method PE42442A-Z PE42442 SP4T RF switch Green 24-lead 4  4 mm QFN 3000 units/T&R EK42442-01 PE42442 Evaluation kit Evaluation kit 1/Box Sales Contact and Information For sales and contact information please visit www.psemi.com. Document No. DOC-33414-8 │ www.psemi.com ©2013-2021 pSemi Corporation All rights reserved. Page 12 of 11
EK42442-01
物料型号:PE42442

器件简介: - PE42442是一款采用HaRP™技术增强的吸收式SP4T射频开关,适用于3G/4G无线基础设施和其他高性能射频应用。

引脚分配: - 该器件共有24个引脚,其中包括4个射频端口(RF1, RF2, RF3, RF4),1个电源电压引脚(VDD),3个数字控制逻辑输入引脚(V1, V2, V3),以及外部负电压控制/地引脚(VSS_EXT)。

参数特性: - 工作频率范围:30 MHz至6 GHz - 插入损耗:在450 MHz至6000 MHz的频率范围内,从0.85 dB至2.35 dB不等 - 隔离度:在450 MHz至6000 MHz的频率范围内,从27 dB至67 dB不等 - IIP2:97 dBm,IIP3:58 dBm - 工作温度范围:-40°C至+125°C - 快速切换时间:255 ns(典型值)

功能详解: - 该开关具有四个对称的射频端口,提供高达6 GHz的非常高的隔离度。 - 集成的CMOS解码器支持两针或三针1.8V CMOS控制接口。 - 不需要外部阻塞电容器,如果RF端口上有0 VDC。 - pSemi的HaRP技术增强提供高线性度和出色的谐波性能。

应用信息: - 适用于3G/4G无线基础设施等高性能射频应用。

封装信息: - 24引脚,4mm x 4mm QFN封装。
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