EK42451-01

Product Specification PE42451 Product Description The PE42451 is a HaRP™-enhanced sbsorptive SP5T RF wwitch developed on the UltraCMOS® process technology. This general purpose switch is comprised of five symmetric RF ports and has very high isolation. An on-chip CMOS decode logic facilitates a three-pin low voltage CMOS control interface and an optional external Vss feature (VssEXT). High ESD tolerance and no blocking capacitor requirements make this the ultimate in integration and ruggedness. pSemi’s HaRP™ technology enhancements deliver high linearity and exceptional harmonics performance. It is an innovative feature of the UltraCMOS® process, providing performance superior to GaAs with the economy and integration of conventional CMOS. SP5T Absorptive UltraCMOS® High-Isolation RF Switch 450-5000 MHz, VssEXT option Features  HaRP™-enhanced UltraCMOS® device  Five symmetric, absorptive RF ports  High Isolation:  68 dB at 450 MHz  62 dB at 900 MHz  55 dB at 2100 MHz  53 dB at 2600 MHz  50 dB at 4000 MHz  43 dB at 5000 MHz  IIP2 of 95 dBm, IIP3 of 58 dBm  High ESD tolerance of 3500 V HBM  Optional External Vss Control (VssEXT) Figure 1. Functional Diagram  Three pin CMOS logic control  No blocking capacitors required RFC ESD  Small RoHS-Compliant 24-lead 4x4 mm QFN package RF5 RF1 ESD 50 ESD 50 RF4 RF2 ESD 50 Figure 2. Package Photo 24-lead 4x4 mm QFN ESD 50 RF3 ESD CMOS Control/ Driver and ESD V1 V2 V3 VDD VssEXT (optional) Document No. DOC-22914-3 │ www.psemi.com 50 DOC-02114 ©2009-2021 pSemi Corporation All rights reserved. Page 1 of 11 PE42451 Product Specification Table 1. Electrical Specifications @ 25 °C, VDD = 3.0 V (ZS = ZL = 50 Ω ) Electrical Parameter Path Condition Operating Frequency Min Typ 450 450 MHz 900 MHz 2100 MHz 2600 MHz 4000 MHz 5000 MHz 450 MHz 900 MHz 2100 MHz 2600 MHz 4000 MHz 5000 MHz 450 - 4000 MHz 4000 - 5000 MHz RFC - RFX RFC - RFX RFC - RFX RFC - RFX RFC - RFX RFC - RFX RFC/RFX - RFX RFC/RFX - RFX RFC/RFX - RFX RFC/RFX - RFX RFC/RFX - RFX RFC/RFX - RFX Insertion Loss, IL Isolation, Iso 58.5 53.0 46.5 46.5 45.0 41.0 1.60 1.65 1.95 2.05 2.25 2.50 68 62 55 53 50 43 16 14 Max Unit 5000 MHz 1.95 2.05 2.30 2.40 2.75 3.15 dB dB dB dB dB dB dB dB dB dB dB dB dB dB Return Loss, Active Port RFX - RFX Return Loss, Terminated Port RFX - RFX 450 - 4000 MHz 4000 - 5000 MHz 15 12 dB dB Input 1 dB compression1, P1dB RFX - RFC 450 - 5000 MHz,100% duty cycle 35 dBm Input IP2 RFX - RFC 450 - 5000 MHz, 100% duty cycle 95 dBm Input IP3 RFX - RFC 450 - 5000 MHz, 100% duty cycle 58 "On" "Off" 50% Control to 90% RF 50% Control to 10% RF 200 200 Switching Time, TSW Notes: dBm 500 500 ns ns 1. Please refer to Maximum Operating Power in Table 2 Table 2. Operating Ranges Parameter VDD Supply Voltage VssEXT Negative Power Supply Voltage2 IDD Power Supply Current VDD = 3.0 V, PIN= 0 dBm IDD Max Power Supply Current VDD = 3.3 V, PMAX= 33 dBm, Temperature = -40°C Symbol Min Typ Max Units VDD 2.7 3.0 3.3 V VssEXT -3.3 -3.0 -2.7 V 14 IDD IDD (max) µA 50 µA Control Voltage High VIH 0.7 x VDD VDD V Control Voltage Low VIL 0 0.3 x VDD V ICTRL 1 µA PMAX 33 dBm PMAX 24 dBm +105 °C ICTRL Control Current3 Maximum Operating Power (RFX-RFC, All Bands (50Ω), 100% duty cycle) Maximum power into termination (RFX, All Bands (50Ω),100% duty cycle) Operating temperature range Note: TOP -40 2. Applied only when external Vss power supply used. Pin 20 must be grounded when using internal Vss supply. 3. Pull-down resistor in EVK schematic may increase control current. ©2009-2021 pSemi Corporation All rights reserved. Page 2 of 11 Document No. DOC-22914-3 │ UltraCMOS® RFIC Solutions PE42451 Product Specification GND GND RFC GND VssEXT/ GND V3 24 23 22 21 20 19 Figure 3. Pin Configuration (Top View) GND 1 18 V2 RF5 2 17 V1 GND 3 16 Vdd GND 4 RF4 GND Exposed Ground Paddle 11 12 RF2 GND GND GND GND 10 13 9 6 8 RF1 RF3 14 GND GND 5 7 15 Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS® device, observe the same precautions that you would use with other ESDsensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS® devices are immune to latch-up. Moisture Sensitivity Level The Moisture Sensitivity Level rating for the PE42451 in the 24-lead 4x4 QFN package is MSL1. Table 3. Pin Descriptions Pin # Name 1, 3, 4, 6, 7, 9, 10, GND Ground 12, 13, 15, 21, 23, 24 2 RF54 RF I/O Description Optional External Vss Control (VssEXT) 5 RF4 4 RF I/O 8 RF34 RF I/O 11 RF24 RF I/O 14 RF1 16 VDD Supply 17 V1 Switch control input, CMOS logic level 18 V2 Switch control input, CMOS logic level 19 4 RF I/O V3 Switch control input, CMOS logic level VssEXT / External Vss Control / Ground GND5 20 22 RFC RF Common Paddle GND Ground for proper device operation Note: 4 4. Blocking capacitors needed only when non-zero DC voltage present. 5. Pin 20 must be grounded when using internal Vss supply Table 4. Absolute Maximum Ratings Symbol Parameter/Conditions Min Switching Frequency The PE42451 has a maximum 25 kHz switching rate when the internal negative voltage generator is used (pin 20=GND). The rate at which the PE42451 can be switched is only limited to the switching time if an external -3 V supply is provided (pin 20=VssEXT ). Table 5. Truth Table Max Units Mode V3 V2 V1 +150 °C All off 0 0 0 RF1 on 0 0 1 RF2 on 0 1 0 RF3 on 0 1 1 RF4 on 1 0 0 RF5 on 1 0 1 All off 1 1 0 Unsupported 1 1 1 TST Storage temperature range PMAX Maximum Operating Power (RFX-RFC, All Bands (50Ω), 100% duty cycle) 33 dBm PMAX Maximum power into termination (RFX, All Bands (50Ω),100% duty cycle) 24 dBm VESD ESD Voltage HBM6, All Pins 3500 V VESD ESD Voltage MM7, All Pins 150 V Notes: -60 For proper operation, the VssEXT control must be grounded or at the Vss voltage specified in the Operating Ranges table (Table 2). When the VssEXT control pin on the package is grounded the switch FET’s are biased with an internal low spur negative voltage generator. For applications that require the lowest possible spur performance, VssEXT can be applied to bypass the internal negative voltage generator to eliminate the spurs. 6. Human Body Model ESD Voltage (HBM, MIL_STD 883 Method 3015.7) 7. Machine Model ESD Voltage (JESD22-A115-A) Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Document No. DOC-22914-3 │ www.psemi.com ©2009-2021 pSemi Corporation All rights reserved. Page 3 of 11 PE42451 Product Specification Figure 4. Evaluation Board Layouts Evaluation Kit pSemi Specification PRT-50444 The SP5T switch EK Board was designed to ease customer evaluation of pSemi’s PE42451. The RF common port is connected through a 50 Ω transmission line via the top SMA connector. RF1, RF2, RF3 and RF4 are connected through 50 Ω transmission lines via side SMA connectors. A through 50 Ω transmission is available via SMA connectors RFCAL1 and RFCAL2. This transmission line can be used to estimate the loss of the PCB over the environmental conditions being evaluated. The EVK board is constructed with four metal layers on dielectric materials of Rogers 4003C and 4450 with a total thickness of 32 mils. Layer 1 and layer 3 provide ground for the 50 ohm transmission lines. The 50 ohm transmission lines are designed in layer 2 for high isolation purpose and use a stripline waveguide design with a trace width of 9.4 mils and trace metal thickness of 1.8 mils. The board stack up for 50 ohm transmission lines has 8 mil thickness of Rogers 4003C between layer 1 and layer 2, and 10 mil thickness of Rogers 4450 between layer 2 and layer 3. Please consult manufacturer's guidelines for proper board material properties in your application. The PCB should be designed in such a way that RF transmission lines and sensitive DC i/o traces such as VssEXT are heavily isolated from one another, otherwise the true performance of the PE42451 will not be yielded. Figure 5. Evaluation Board Schematic pSemi Specification DOC-44837 J1 HEADER 14 R1 VSS VDD 0 OHM R2 C1 V3 V2 V1 1M DNI 13 11 9 7 5 3 1 13 11 9 7 5 3 1 14 12 10 8 6 4 2 14 12 10 8 6 4 2 R3 0 OHM R4 C2 100pF RFC 1M R5 2 1 0 OHM R6 C3 100pF RFC 1M R7 6 20 19 V3 VSS 21 23 22 RFC V1 17 VDD 16 GND 15 RF4 RF1 14 GND GND 13 U1 RF1 1 RF2 RFCAL2 RFCAL1 1 RF RF CAL 1 STRIPLINE ©2009-2021 pSemi Corporation All rights reserved. Page 4 of 11 C6 1µF USE PCB 101-0479-03 1 2 2 RF3 C5 100pF GND RF2 R9 0 OHM RF1 RF2 1 RF3 1M 12 11 GND 10 9 7 GND PE4245x_24L_QFN R8 2 5 18 2 GND V2 2 GND 4 GND RF5 3 GND 2 GND 2 RF4 GND RF3 2 1 RF4 1 8 1 RF5 RF5 GND 24 0 OHM C4 100pF Document No. DOC-22914-3 │ UltraCMOS® RFIC Solutions PE42451 Product Specification Performance Plots @ 25 °C and 3.0 V unless otherwise specified. Figure 6. Insertion Loss vs. Frequency Over Voltages Figure 7. Insertion Loss vs. Frequency Over Temperatures Figure 8. Insertion Loss vs. Frequency, All Paths Document No. DOC-22914-3 │ www.psemi.com ©2009-2021 pSemi Corporation All rights reserved. Page 5 of 11 PE42451 Product Specification Performance Plots @ 25 °C and 3.0 V unless otherwise specified Figure 9. Isolation: RFC-RFX @ 3.0 V Figure 10. Isolation: RFC-RFX @ 25 °C Figure 11. Isolation: RFX-RFX @ 3.0 V Figure 12. Isolation: RFX-RFX @ 25 °C ©2009-2021 pSemi Corporation All rights reserved. Page 6 of 11 Document No. DOC-22914-3 │ UltraCMOS® RFIC Solutions PE42451 Product Specification Performance Plots @ 25 °C and 3.0 V unless otherwise specified (Continued) Figure 13. Return Loss at Active Port @ 3.0 V Figure 14. Return Loss at Active Port @ 25 °C Figure 15. Return Loss: RFC @ 3.0 V Figure 16. Return Loss: RFC @ 25 °C Figure 17. Return Loss: All Paths, Terminated Document No. DOC-22914-3 │ www.psemi.com ©2009-2021 pSemi Corporation All rights reserved. Page 7 of 11 PE42451 Product Specification Performance Plots @ 25 °C and 3.0 V unless otherwise specified (Continued) Figure 18. Nominal Linearity Performance (IIP3) Figure 19. Nominal Linearity Performance (IIP2) 70 120 60 100 50 IIP2 [dBm] IIP3 [dBm] 80 40 TX1 30 TX2 TX3 20 60 TX1 TX2 40 TX3 TX4 TX4 TX5 20 10 0 TX5 0 0 1000 2000 3000 4000 Frequency [MHz] ©2009-2021 pSemi Corporation All rights reserved. Page 8 of 11 5000 6000 0 1000 2000 3000 4000 5000 6000 Frequency [MHz] Document No. DOC-22914-3 │ UltraCMOS® RFIC Solutions PE42451 Product Specification Figure 20. Package Drawing   24-lead 4x4 mm QFN DOC-58197 Document No. DOC-22914-3 │ www.psemi.com ©2009-2021 pSemi Corporation All rights reserved. Page 9 of 11 PE42451 Product Specification Figure 21. Tape and Reel Drawing A0 = 4.35 B0 = 4.35 K0 = 1.1 Tape Feed Direction Pin 1 Top of Device Device Orientation in Tape Figure 22. Marking Specifications 42451 YYWW ZZZZZ YYWW = Date Code ZZZZZ = Last five digits of Lot Number DOC-51207 ©2009-2021 pSemi Corporation All rights reserved. Page 10 of 11 Document No. DOC-22914-3 │ UltraCMOS® RFIC Solutions PE42451 Product Specification Table 6. Ordering Information Order Code Part Marking Description Package Shipping Method PE42451MLIAA 42451 PE42451G-24QFN 4x4mm-cut off tape and reel Green 24-lead 4x4mm QFN Bulk or tape cut from reel PE42451MLIAA-Z 42451 PE42451G-24QFN 4x4mm-3000C Green 24-lead 4x4mm QFN 3000 units / T&R EK42451-01 PE42451 -EK PE42451-24QFN 4x4mm-EK Evaluation Kit 1 / Box Sales Contact and Information For sales and contact information please visit www.psemi.com. Document No. DOC-22914-3 │ www.psemi.com ©2009-2021 pSemi Corporation All rights reserved. Page 11 of 11