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EK45450-02

EK45450-02

  • 厂商:

    PEREGRINE(游隼半导体)

  • 封装:

    -

  • 描述:

    EVAL KIT FOR PE45450

  • 数据手册
  • 价格&库存
EK45450-02 数据手册
Product Specification PE45450 UltraCMOS® Power Limiter 9 kHz–6 GHz Product Description The PE45450 is a HaRP™ technology-enhanced power limiter designed for use in high performance power limiting applications in test and measurement equipment, radar, military electronic counter measure receivers and wireless infrastructure transceivers and antennas. Unlike traditional PIN diode solutions, the PE45450 achieves an adjustable input 1 dB compression point or limiting threshold via a low current control voltage (VCTRL), eliminating the need for external bias components, such as DC blocking capacitors, RF choke inductors, and bias resistors. It delivers low insertion loss and high linearity under nonlimiting input power levels and extremely fast response and recovery time in a limiting event. It also offers superior ESD rating and ESD protection for subsequent circuitry. The PE45450 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate. Peregrine’s HaRP™ technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Features  Monolithic drop-in solution with no       external bias components reducing design complexity Adjustable power limiting threshold from +25 dBm to +35 dBm Max power handling  +40 dBm CW (10W)  +47 dBm Pulsed (50W) Superior ESD rating and ESD protection  8 kV HBM on all pins  1 kV CDM on all pins  600V MM on all pins Unbiased power limiting operation Fast response and recovery time of 1 ns Dual mode operation  Power limiting mode  Power reflecting mode Figure 2. Package Type 12-lead 3x3 mm QFN Figure 1. Functional Diagram POUT P1dB RF1 RF2 PIN Voltage Control and ESD VCTRL Document No. DOC-44314-5 │ www.psemi.com DOC-62357 ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 12 PE45450 Product Specification Table 1. Electrical Specifications @ +25°C (ZS = ZL = 50Ω), unless otherwise noted Parameter Condition Operating frequency Min Typ 9 kHz Max Unit 6 GHz As shown 0.70 1.05 dB dB Power limiting mode Insertion loss1 9 kHz–3 GHz 3–6 GHz 0.45 0.80 Return loss1 9 kHz–3 GHz 3–6 GHz 13 17 dB dB P1dB / limiting threshold VCTRL = –2.5V @ 915 MHz VCTRL = –1.5V @ 915 MHz VCTRL = –0.5V @ 915 MHz 35 32 25 dBm dBm dBm Leakage power2 VCTRL = –2.5V @ 915 MHz VCTRL = –1.5V @ 915 MHz VCTRL = –0.5V @ 915 MHz 33.5 33 31.5 VCTRL = –1.0V @ 915 MHz 0.4 VCTRL = 0V @ 915 MHz 25 Input IP2 VCTRL = –2.5V @ 915 MHz VCTRL = –2.5V @ 6 GHz 115 110 dBm dBm Input IP3 VCTRL = –2.5V @ 915 MHz VCTRL = –2.5V @ 6 GHz 70 60 dBm dBm 1 GHz 1 ns Leakage power2 VCTRL = +2.5V @ 915 MHz 2 Switching time4 State change to 10% RF Leakage power slope Unbiased leakage power 2 Response / recovery time Power reflecting mode Notes: 35.5 35 33.5 dBm dBm dBm dB/dB 27 dBm 3 400 8 dBm µs 1. External matching is required to achieve the performance. 2. Measured with +40 dBm CW applied at input. 3. This mode requires the control voltage to toggle between +2.5V and –2.5V. At +2.5V, the limiter equivalent circuit is a low impedance to ground, reflecting most of the incident power back to the source. 4. State change is VCTRL toggle from –2.5V to +2.5V. ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 12 Document No. DOC-44314-5 │ UltraCMOS® RFIC Solutions PE45450 Product Specification Figure 3. Pin Configuration (Top View)* Table 3. Operating Ranges Parameter Control voltage Power limiting mode Power reflecting mode RF input power, CW1 RF input power, pulsed 2 RF input power, unbiased2,3 Operating temperature range Operating junction temperature1 Notes: Symbol Min VCTRL –2.5 –2.5 Typ Max Unit –0.5 +2.5 V V PMAX,CW 40 dBm PMAX,PULSED 47 dBm PMAX,UNB 47 dBm +85 °C +290 °C TOP –55 +25 TJ 1. CW, 100% duty cycle, in 10 min, 50Ω 2. Pulsed, 0.1% duty cycle of 1 µs pulse width in 10 min, 50Ω 3. VCTRL = 0V or VCTRL pin left not connected Table 4. Absolute Maximum Ratings Note: * Pins 10–12 can be ground if deemed necessary by the customer. Symbol Min Max Unit Control voltage Power limiting mode Power reflecting mode VCTRL –3.3 3.6 V Storage temperature range TST –65 +150 °C VESD,HBM 8000 V VESD,MM 600 V VESD,CDM 1000 V Parameter Table 2. Pin Descriptions Pin No. Pin Name 1, 3, 4, 6, 7, 9 GND 2 RF1* Description Ground RF port 1 1 ESD voltage HBM , all pins 2 ESD voltage MM , all pins 3 5 VCTRL Control voltage ESD voltage CDM , all pins 8 RF2* RF port 2 Notes: 10–12 N/C No connect Pad GND Exposed pad: Ground for proper operation Note: * RF pins 2 and 8 must be at 0 VDC. The RF pins do not require DC blocking capacitors for proper operation if the 0 VDC requirement is met. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Moisture Sensitivity Level The Moisture Sensitivity Level rating for the PE45450 in the 12-lead 3x3 mm QFN package is MSL1. Document No. DOC-44314-5 │ www.psemi.com 1. Human Body Model (HBM, MIL_STD 883 Method 3015.7) 2. Machine Model (JEDEC JESD22-A115) 3. Charged Device Model (JEDEC JESD22-C101) Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified. ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 12 PE45450 Product Specification ESD Protection Capability Dual Mode Operation The PE45450 can be used as an ESD protection device to protect sensitive circuit elements against ESD surges. Besides superior ESD rating of 8 kV HBM, the PE45450 has excellent voltage clamping capability. During an ESD event, the PE45450 maintains very low voltage across the device to ensure that the circuit element it is protecting survives. Power Limiting Mode The PE45450 performs as a linear power limiter with adjustable P1dB / limiting threshold. The P1dB / limiting threshold can be adjusted by changing the control voltage between –2.5V and –0.5V. If unbiased, or if VCTRL = 0V, the PE45450 still offers power limiting protection. Power Reflecting Mode Power reflecting mode requires a power detector to sample the RF input power and a microcontroller to toggle the limiter control voltage between +2.5V and –2.5V based on the system protection requirements. At +2.5V, the limiter impedance to ground is less than 1Ω and most of the incident power will be reflected back to the source. At –2.5V, the device operates as in power limiting mode. Table 5. Transmission Line Pulse Data vs. HBM VCTRL HBM (V) Max Current (A) Voltage (V) 0 1000 0.7 3.7 –1.5 1000 0.7 18 0 2000 1.3 7 –1.5 2000 1.3 20 0 3000 2.0 10.8 –1.5 3000 2.0 21.5 Figure 4. Transmission Line Pulse Curve 10 9 8 7 Current(A) 6 5 4 Vctrl=0V 3 Vctrl=‐1.5V 2 1 0 0 5 10 15 20 25 30 Voltage(V) ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 4 of 12 Document No. DOC-44314-5 │ UltraCMOS® RFIC Solutions PE45450 Product Specification Thermal Data When limiting high power RF signals, the junction temperature of the power limiter can rise significantly. Table 6. Theta JC Parameter Theta JC Min Typ 20 Max Unit °C/W Special consideration needs to be made in the design of the PCB to properly dissipate the heat away from the part and maintain the 290°C peak junction temperature. It is recommended to use best design practices for high power QFN packages: multi-layer PCBs with thermal vias in a thermal pad soldered to the slug of the package. Special care also needs to be made to alleviate solder voiding under the part. Document No. DOC-44314-5 │ www.psemi.com ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 5 of 12 PE45450 Product Specification Typical Performance Data @ +25°C, 915 MHz (ZS = ZL = 50Ω), unless otherwise noted Figure 5. Insertion Loss vs. Temperature Figure 6. Input Return Loss vs. Temperature ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 6 of 12 Figure 7. Output Return Loss vs. Temperature Document No. DOC-44314-5 │ UltraCMOS® RFIC Solutions PE45450 Product Specification Typical Performance Data @ +25°C, 915 MHz (ZS = ZL = 50Ω), unless otherwise noted Figure 8. POUT vs. PIN Over VCTRL –1.5V –0.7V –0.5V 0V 2.5V –0.7V @ 915 MHz 40 40 35 35 30 30 25 25 Pout (dBm) Pout (dBm) –2.5V Figure 9. POUT vs. PIN Over Frequency @ VCTRL = –0.7V 20 15 –0.7V @ 3 GHz –0.7V @ 6 GHz 20 15 10 10 5 5 0 0 10 15 20 25 Pin (dBm) 30 35 40 Figure 10. P1dB vs. VCTRL Over Temperature P1dB @ –55°C (dBm) P1dB @ 25°C (dBm) 10 15 20 25 Pin (dBm) 30 35 40 Figure 11. POUT vs. PIN Over Frequency @ VCTRL = –1.5V P1dB @ 85°C (dBm) –1.5V @ 915 MHz 40 –1.5V @ 3 GHz –1.5V @ 6 GHz 40 35 35 30 Pout (dBm) P1dB (dBm) 30 25 25 20 15 10 20 5 15 ‐2.5 ‐2 ‐1.5 VCTRL (V) Document No. DOC-44314-5 │ www.psemi.com ‐1 ‐0.5 0 10 15 20 25 Pin (dBm) 30 35 40 ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 7 of 12 PE45450 Product Specification Typical Performance Data @ +25°C, 915 MHz (ZS = ZL = 50Ω), unless otherwise noted Figure 12. IIP3 / IIP2 vs. VCTRL Over Temperature Figure 13. IIP3 / IIP2 vs. PIN Over VCTRL IIP3 @ –55°C (dBm) IIP3 @ 25°C (dBm) IIP3 @ 85°C (dBm) IIP3 @ VCTRL = –2.5V (dBm) IIP2 @ VCTRL = –2.5V (dBm) IIP3 @ VCTRL = –1.5V (dBm) IIP2 @ –55°C (dBm) IIP2 @ 25°C (dBm) IIP2 @ 85°C (dBm) IIP2 @ VCTRL = –1.5V (dBm) IIP3 @ VCTRL = –0.7V (dBm) IIP2 @ VCTRL = –0.7V (dBm) IIP3 @ VCTRL = –0.5V (dBm) IIP2 @ VCTRL = –0.5V (dBm) 130 120 100 IIP3 / IIP2  (dBm) 90 80 70 60 50 40 30 ‐2.5 ‐2 ‐1.5 VCTRL (V) ‐1 ‐0.5 10 20 25 30 35 Figure 15. P1dB, IIP3, IIP2, Leakage Power @ PMAX vs. VCTRL IIP3 (dBm) Leakage Power (25°C) @ Pmax IIP2 (dBm) P1dB (dBm) Leakage Power @ Pmax 120 38 110 36 100 34 90 32 80 30 70 28 60 26 50 24 40 22 ‐5 30 20 ‐10 20 Leakage Power (85°C) @ Pmax 40 35 IIP3 / IIP2 / P1 dB (dBm) 30 Leakage Power (dBm) 15 Pin (dBm) Figure 14. Leakage Power @ PMAX vs. VCTRL Over Temperature Leakage Power (–55°C) @ Pmax  140 130 120 110 100 90 80 70 60 50 40 30 20 25 20 15 10 5 0 ‐2.5 ‐2 ‐1.5 ‐1 ‐0.5 0 0.5 1 1.5 2 VCTRL (V) ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 8 of 12 2.5 Leakage Power @ Pmax (dBm) IIP3 / IIP2 (dBm) 110 18 ‐2.5 ‐2 ‐1.5 VCTRL (V) ‐1 ‐0.5 Document No. DOC-44314-5 │ UltraCMOS® RFIC Solutions PE45450 Product Specification Evaluation Kit Figure 16. Evaluation Board Layout The power limiter EVK board was designed to ease customer evaluation of Peregrine’s PE45450. The bi-directional RF input and output are connected to RF1 and RF2 port through a 50Ω transmission line via SMA connectors J2 and J3. A through 50Ω transmission line is available via SMA connectors J5 and J6. This transmission line can be used to estimate the loss of the PCB over the environmental conditions being evaluated. The 2-pin connector J4 is connected to the external bias VCTRL. The board is constructed of a four metal layer material with a total thickness of 62 mils. The top RF layer is Rogers RO4350B material with a 6.6 mil RF core and Er = 3.66. The middle layers provide ground for the transmission lines. The transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 13.5 mils, trace gaps of 10 mils, and metal thickness of 2.1 mils. Document No. DOC-44314-5 │ www.psemi.com PRT-51452 ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 9 of 12 PE45450 Product Specification Figure 17. Evaluation Board Schematic NOT USED FOR PE45450 VDD J1 1 1 2 2 R1 DNI DNI C3 50 OHM 1 GND 2 RF1 3 GND C1 0.3pF PE45450 50 OHM GND 9 RF2 8 GND 7 13 DAP J2 4 GND 5 VCTRL 6 GND U1 N/C 12 N/C 11 N/C 10 DNI C2 0.3pF J3 J5 50 OHM J6 THRU C4 DNI R2 0 Ohm J4 1 1 2 2 HEADER2 Caution: Contains parts and assemblies susceptible to damage by electrostatic discharge (ESD). ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 10 of 12 DOC-44327 Document No. DOC-44314-5 │ UltraCMOS® RFIC Solutions PE45450 Product Specification Figure 18. Package Drawing 12-lead 3x3 mm QFN A 0.30 (x12) 0.10 C (2X) 3.00 0.50 1.80±0.10 B 0.30±0.05 (x12) (x8) 0.70 (x12) 0.50 (x8) 3.00 1.80±0.10 1.90 3.10 0.25±0.05 (x12) 0.10 C 1.00 Ref. (2X) PIN #1 CORNER TOP VIEW 1.90 3.80 BOTTOM VIEW 0.10 0.05 0.10 C 0.50±0.05 0.05 C RECOMMENDED LAND PATTERN DOC-52193 C A B C ALL FEATURES SEATING PLANE SIDE VIEW 0.152 Ref. 0.02 C Figure 19. Top Marking Specifications 45450 YYWW ZZZZZZ = Pin 1 designator 45450 = Five digit part number YYWW = Date Code, last two digits of the year and work week ZZZZZZ = Maximum six characters of the assembly lot code DOC-51207 Document No. DOC-44314-5 │ www.psemi.com ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 11 of 12 PE45450 Product Specification Figure 20. Tape and Reel Drawing Table 7. Ordering Information Order Code Description Package Shipping Method PE45450A-X PE45450 Power limiter Green 12-lead 3x3 mm QFN 500 units / T&R EK45450-02 PE45450 Evaluation kit Evaluation kit 1 / box Sales Contact and Information For sales and contact information please visit www.psemi.com. Advance Information: The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and features may change in any manner without notice. Preliminary Specification: The datasheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification: The datasheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a CNF (Customer Notification Form). The information in this datasheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user’s own risk. ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 12 of 12 No patent rights or licenses to any circuits described in this datasheet are implied or granted to any third party. Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. The Peregrine name, logo, UltraCMOS and UTSi are registered trademarks and HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp. Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com. Document No. DOC-44314-5 │ UltraCMOS® RFIC Solutions
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