PE42520MLBA-Z

Product Specification PE42520 UltraCMOS® SPDT RF Switch 9 kHz–13 GHz Product Description The PE42520 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 9 kHz through 13 GHz. This switch is a pin-compatible upgraded version of PE42552 with higher power handling of 36 dBm continuous wave (CW) and 38 dBm instantaneous power in 50Ω @ 8 GHz. The PE42520 exhibits high isolation, fast settling time, and is offered in a 3 × 3 mm QFN package. Features • HaRP™ technology enhanced • Fast settling time • No gate and phase lag • No drift in insertion loss and phase • High power handling @ 8 GHz in 50Ω • 36 dBm CW • 38 dBm instantaneous power • 26 dBm terminated port The PE42520 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration • High linearity • 66 dBm IIP3 • Low insertion loss • • • Figure 1. Functional Diagram • High isolation RFC • 45 dB @ 3 GHz ESD • 31 dB @ 10 GHz • 18 dB @ 13 GHz RF2 RF1 ESD ESD 0.8 dB @ 3 GHz 0.9 dB @ 10 GHz 2.0 dB @ 13 GHz • ESD performance • 4 kV HBM on RF pins to GND • 2.5 kV HBM on all pins • 1 kV CDM on all pins 50Ω CMOS Control Driver and ESD LS CTRL VssEXT Document No. DOC-73010-3 | www.psemi.com 50Ω Figure 2. Package Type 16-lead 3 × 3 mm QFN DOC-50572 ©2015–2021 pSemi Corporation All rights reserved. Page 1 of 16 PE42520 Product Specification Table 1. Electrical Specifications @ +25 °C, VDD = 3.3V, VSS_EXT = 0V or VDD = 3.4V, VSS_EXT = –3.4V, (ZS = ZL = 50Ω ), unless otherwise noted Parameter Path Condition Min Operation frequency Typ 9 kHz Unit 13 GHz As shown 0.80 1.00 1.05 1.10 1.65 2.70 dB dB dB dB dB dB RFC–RFX 9 kHz–10 MHz 10 MHz–3 GHz 3 GHz–7.5 GHz 7.5 GHz–10 GHz 10 GHz–12 GHz 12 GHz–13 GHz RFX–RFX 9 kHz–10 MHz 10 MHz–3 GHz 3 GHz–7.5 GHz 7.5 GHz–10 GHz 10 GHz–12 GHz 12 GHz–13 GHz 70 46 35 24 16 13 90 54 38 27 19 17 dB dB dB dB dB dB RFC–RFX 9 kHz–10 MHz 10 MHz–3 GHz 3 GHz–7.5 GHz 7.5 GHz–10 GHz 10 GHz–12 GHz 12 GHz–13 GHz 80 42 41 26 16 13 90 45 44 31 20 18 dB dB dB dB dB dB RFC–RFX 9 kHz–10 MHz 10 MHz–3 GHz 3 GHz–7.5 GHz 7.5 GHz–10 GHz 10 GHz–12 GHz 12 GHz–13 GHz 23 17 15 18 20 10 dB dB dB dB dB dB RFC–RFX 9 kHz–10 MHz 10 MHz–3 GHz 3 GHz–7.5 GHz 7.5 GHz–10 GHz 10 GHz–12 GHz 12 GHz–13 GHz 23 17 15 18 18 10 dB dB dB dB dB dB RFX 9 kHz–10 MHz 10 MHz–3 GHz 3 GHz–7.5 GHz 7.5 GHz–10 GHz 10 GHz–12 GHz 12 GHz–13 GHz 32 24 21 13 8 5 dB dB dB dB dB dB Input 0.1dB compression point1 RFC–RFX 10 MHz–13 GHz Fig. 5 dBm Input IP2 RFC–RFX 834 MHz, 1950 MHz 120 dBm Input IP3 RFC–RFX 834 MHz, 1950 MHz, and 2700 MHz 66 dBm Settling time 50% CTRL to 0.05 dB final value 15 20 μs Switching time 50% CTRL to 90% or 10% of final value 5.5 9.5 μs Insertion loss Isolation Isolation Return loss (active port) Return loss (common port) Return loss (terminated port) 0.60 0.80 0.85 0.90 1.20 2.00 Max Note 1: The input 0.1dB compression point is a linearity figure of merit. Refer to Table 3 for the RF input power PIN (50Ω) ©2015–2021 pSemi Corporation All rights reserved. Page 2 of 16 Document No. DOC-73010-3 | UltraCMOS® RFIC Solutions PE42520 Product Specification GND 1 RF1 2 VDD LS CTRL VssEXT 15 14 13 Pin 1 dot marking 16 Figure 3. Pin Configuration (Top View) Parameter 12 GND 11 RF2 Exposed Pad GND 4 9 GND GND RFC GND GND 8 GND 7 10 6 3 5 GND Table 2. Pin Descriptions Pin # Pin Name 2 RF11 RF port 1 1, 3, 4, 5, 6, 8, 9, 10, 12 GND Ground 7 RFC1 RF common 11 RF2 RF port 2 13 VSS_EXT2 External VSS negative voltage control 14 CTRL Digital control logic input 15 LS Logic Select – used to determine the definition for the CTRL pin (see Table 5) 16 VDD Supply voltage Pad GND Notes: 1 Table 3. Operating Ranges Description Exposed pad: ground for proper operation 1. RF pins 2, 7 and 11 must be at 0 VDC. The RF pins do not require DC blocking capacitors for proper operation if the 0 VDC requirement is met. 2. Use VSS_EXT (pin 13) to bypass and disable internal negative voltage generator. Connect VSS_EXT (pin 13) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. Symbol Min Typ Max Unit 5.5 V 5.5 V –3.2 V Supply voltage (normal mode, VSS_EXT = 0V)1 VDD 2.3 Supply voltage (bypass mode, VSS_EXT = –3.4V, VDD ≥ 3.4V for full spec. compliance)2 VDD 2.7 Negative supply voltage (bypass mode)2 VSS_EXT –3.6 Supply current (normal mode, VSS_EXT = 0V)1 IDD 120 200 µA Supply current (bypass mode, VSS_EXT = –3.4V)2 IDD 50 80 µA Negative supply current (bypass mode, VSS_EXT = –3.4V)2 ISS –40 Digital input high (CTRL) VIH 1.17 3.6 VIL –0.3 Digital input low (CTRL) 3.4 –16 µA V 0.6 V ICTRL 10 µA PIN_CW Fig. 4 36 Fig. 5 dBm dBm dBm RF input power, pulsed (RFC–RFX)4 PIN_PULSED 9 kHz ≤ 10 MHz 10 MHz ≤ 13 GHz Fig. 4 Fig. 5 dBm dBm RF input power, hot switch, CW3 9 kHz ≤ 300 kHz 300 kHz ≤ 13 GHz PIN_HOT Fig. 4 20 dBm dBm RF input power into terminated ports, CW (RFX)3 9 kHz ≤ 600 kHz 600 kHz ≤ 13 GHz PIN_TERM Fig. 4 26 dBm dBm +85 °C Digital input current RF input power, CW (RFC–RFX)3 9 kHz ≤ 10 MHz 10 MHz ≤ 8 GHz 8 GHz ≤ 13 GHz Operating temperature range TOP –40 +25 Notes: 1. Normal mode: connect VSS_EXT (pin 13) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. 2. Bypass mode: use VSS_EXT (pin 13) to bypass and disable internal negative voltage generator. 3. 100% duty cycle, all bands, 50Ω. 4. Pulsed, 5% duty cycle of 4620 µs period, 50Ω. Document No. DOC-73010-3 | www.psemi.com ©2015–2021 pSemi Corporation All rights reserved. Page 3 of 16 PE42520 Product Specification Table 4. Absolute Maximum Ratings Parameter/Condition Supply voltage Digital input voltage (CTRL) LS input voltage Symbol Switching Frequency Min Max Unit VDD –0.3 5.5 V VCTRL –0.3 3.6 V VLS –0.3 3.6 V Fig. 4 36 Fig. 5 dBm dBm dBm Fig. 4 Fig. 5 dBm dBm Fig. 4 26 dBm dBm +150 °C +150 °C RF input power, CW (RFC–RFX)1 9 kHz ≤ 10 MHz 10 MHz ≤ 8 GHz 8 GHz ≤ 13 GHz PIN_CW RF input power, pulsed (RFC–RFX)2 9 kHz ≤ 10 MHz 10 MHz ≤ 13 GHz PIN_PULSED RF input power into terminated ports, CW (RFX)1 9 kHz ≤ 10 MHz 10 MHz ≤ 13 GHz PIN_TERM Maximum junction temperature TJ_MAX Storage temperature range TST –65 ESD voltage HBM RF pins to GND All pins VESD_HBM 4000 2500 V V ESD voltage MM4, all pins VESD_MM 200 V ESD voltage CDM , all pins VESD_CDM 1000 V 3 5 The PE42520 has a maximum 25 kHz switching rate when the internal negative voltage generator is used (pin 13 = GND). The rate at which the PE42520 can be switched is only limited to the switching time (Table 1) if an external negative supply is provided (pin 13 = VSS_EXT). Switching frequency describes the time duration between switching events. Switching time is the time duration between the point the control signal reaches 50% of the final value and the point the output signal reaches within 10% or 90% of its Optional External Vss Control (VSS_EXT ) For proper operation, the VSS_EXT control pin must be grounded or tied to the VSS voltage specified in Table 3. When the VSS_EXT control pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applications that require the lowest possible spur performance, VSS_EXT can be applied externally to bypass the Spurious Performance Notes: 1. 100% duty cycle, all bands, 50Ω. 2. Pulsed, 5% duty cycle of 4620 µs period, 50Ω. 3. Human Body Model (MIL-STD 883 Method 3015). 4. Machine Model (JEDEC JESD22-A115). 5. Charged Device Model (JEDEC JESD22-C101). Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified. The typical spurious performance of the PE42520 is –152 dBm when VSS_EXT = 0V (pin 13 = GND). If further improvement is desired, the internal negative voltage generator can be disabled by setting VSS_EXT = –3.4V. Table 5. Control Logic Truth Table LS CTRL RFC–RF1 RFC–RF2 0 0 off on 0 1 on off 1 0 on off 1 1 off on Moisture Sensitivity Level The Moisture Sensitivity Level rating for the PE42520 in the 16-lead 3 × 3 mm QFN package is MSL3. Latch-up Avoidance Logic Select (LS) Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. The Logic Select feature is used to determine the definition for the CTRL pin. ©2015–2021 pSemi Corporation All rights reserved. Page 4 of 16 Document No. DOC-73010-3 | UltraCMOS® RFIC Solutions PE42520 Product Specification Thermal Data Psi-JT (JT), junction top-of-package, is a thermal metric to estimate junction temperature of a device on the customer application PCB (JEDEC JESD51-2). JT = (TJ – TT)/P where JT = junction-to-top of package characterization parameter, °C/W TJ = die junction temperature, °C TT = package temperature (top surface, in the center), °C P = power dissipated by device, Watts Table 6. Thermal Data for PE42520 Typ Unit Ψ JT 51 °C/W Θ JA, junction-to-ambient thermal resistance 79 °C/W Parameter Figure 4. Power De-rating Curve for 9 kHz–10 MHz (50Ω ) 40 35 30 Max. RF Input Power, CW and Pulsed, (-40°C to +85°C Ambient) Input Power (dBm) 25 20 15 10 5 0 -5 1 10 100 1000 10000 Frequency (kHz) Document No. DOC-73010-3 | www.psemi.com ©2015–2021 pSemi Corporation All rights reserved. Page 5 of 16 PE42520 Product Specification Figure 5a. Power De-rating Curve for 10 MHz–13 GHz @ +25 °C Ambient (50Ω ) 40 P0.1dB Compression @ 25°C Ambient 39.5 Max. RF Input Power, Pulsed @ 25°C Ambient 39 Max. RF Input Power, CW @ 25°C Ambient 38.5 38 Input Power (dBm) 37.5 37 36.5 36 35.5 35 34.5 34 33.5 33 0.01 0 1 2 3 4 5 6 7 Frequency (GHz) 8 9 10 11 12 13 Figure 5b. Power De-rating Curve for 10 MHz–13 GHz @ +85 °C Ambient (50Ω ) 40 P0.1dB Compression @ 85°C Ambient 39.5 Max. RF Input Power, Pulsed @ 85°C Ambient 39 Max. RF Input Power, CW @ 85°C Ambient 38.5 38 Input Power (dBm) 37.5 37 36.5 36 35.5 35 34.5 34 33.5 33 0.01 0 1 2 3 4 ©2015–2021 pSemi Corporation All rights reserved. Page 6 of 16 5 6 7 Frequency (GHz) 8 9 10 11 Document No. DOC-73010-3 | 12 13 UltraCMOS® RFIC Solutions PE42520 Product Specification Typical Performance Data @ +25 °C and VDD = 3.4V, unless otherwise specified Figure 6. Insertion Loss vs. Temp (RFC–RF1) Figure 7. Insertion Loss vs. VDD (RFC–RF1) Figure 8. Insertion Loss vs. Temp (RFC–RF2) Figure 9. Insertion Loss vs. VDD (RFC–RF2) Document No. DOC-73010-3 | www.psemi.com ©2015–2021 pSemi Corporation All rights reserved. Page 7 of 16 PE42520 Product Specification Typical Performance Data @ +25 °C and VDD = 3.4V, unless otherwise specified (Cont.) Figure 10. RFC Port Return Loss vs. Temp (RF1 Active) Figure 11. RFC Port Return Loss vs. VDD (RF1 Active) Figure 12. RFC Port Return Loss vs. Temp (RF2 Active) Figure 13. RFC Port Return Loss vs. VDD (RF2 Active) ©2015–2021 pSemi Corporation All rights reserved. Page 8 of 16 Document No. DOC-73010-3 | UltraCMOS® RFIC Solutions PE42520 Product Specification Typical Performance Data @ +25 °C and VDD = 3.4V, unless otherwise specified (Cont.) Figure 14. Active Port Return Loss vs. Temp (RF1 Active) Figure 15. Active Port Return Loss vs. VDD (RF1 Active) Figure 16. Active Port Return Loss vs. Temp (RF2 Active) Figure 17. Active Port Return Loss vs. VDD (RF2 Active) Document No. DOC-73010-3 | www.psemi.com ©2015–2021 pSemi Corporation All rights reserved. Page 9 of 16 PE42520 Product Specification Typical Performance Data @ +25 °C and VDD = 3.4V, unless otherwise specified (Cont.) Figure 18. Terminated Port Return Loss vs. Temp (RF1 Active) Figure 19. Terminated Port Return Loss vs. VDD (RF1 Active) Figure 20. Terminated Port Return Loss vs. Temp (RF2 Active) Figure 21. Terminated Port Return Loss vs. VDD (RF2 Active) ©2015–2021 pSemi Corporation All rights reserved. Page 10 of 16 Document No. DOC-73010-3 | UltraCMOS® RFIC Solutions PE42520 Product Specification Typical Performance Data @ +25 °C and VDD = 3.4V, unless otherwise specified (Cont.) Figure 22. Isolation vs. Temp (RF1–RF2, RF1 Active) Figure 23. Isolation vs. VDD (RF1–RF2, RF1 Active) Figure 24. Isolation vs. Temp (RF2–RF1, RF2 Active) Figure 25. Isolation vs. VDD (RF2–RF1, RF2 Active) Document No. DOC-73010-3 | www.psemi.com ©2015–2021 pSemi Corporation All rights reserved. Page 11 of 16 PE42520 Product Specification Typical Performance Data @ +25 °C and VDD = 3.4V, unless otherwise specified (Cont.) Figure 26. Isolation vs. Temp (RFC–RF2, RF1 Active) Figure 27. Isolation vs. VDD (RFC–RF2, RF1 Active) Figure 28. Isolation vs. Temp (RFC–RF1, RF2 Active) Figure 29. Isolation vs. VDD (RFC–RF1, RF2 Active) ©2015–2021 pSemi Corporation All rights reserved. Page 12 of 16 Document No. DOC-73010-3 | UltraCMOS® RFIC Solutions PE42520 Product Specification Evaluation Kit Figure 30. Evaluation Kit Layout The SPDT switch evaluation board was designed to ease customer evaluation of pSemi’s PE42520. The RF common port is connected through a 50Ω transmission line via the SMA connector, J1. RF1 and RF2 ports are connected through 50Ω transmission lines via SMA connectors J2 and J3, respectively. A 50Ω through transmission line is available via SMA connectors J5 and J6, which can be used to de-embed the loss of the PCB. J4 provides DC and digital inputs to the device. For the true performance of the PE42520 to be realized, the PCB should be designed in such a way that RF transmission lines and sensitive DC I/O traces are heavily isolated from one another. PRT-30186 Document No. DOC-73010-3 | www.psemi.com ©2015–2021 pSemi Corporation All rights reserved. Page 13 of 16 PE42520 Product Specification Figure 31. Evaluation Board Schematic DOC-12726 Notes: 1. Use PRT-30186-02 PCB. 2. CAUTION: Contains parts and assemblies susceptible to damage by electrostatic discharge (ESD). ©2015–2021 pSemi Corporation All rights reserved. Page 14 of 16 Document No. DOC-73010-3 | UltraCMOS® RFIC Solutions PE42520 Product Specification Figure 32. Package Drawing 0.10 C 3.00 A (2X) 0.30 (X16) 1.70±0.05 B 9 0.50 (X12) 12 0.750 (X16) 13 8 1.70±0.05 3.00 4 0.10 C (2X) 1.75 3.75 16 5 0.25±0.05 (X16) 0.50 (X12) 1 1.50 0.30±0.05 (X16) 1.75 Pin #1 Corner 3.75 TOP VIEW BOTTOM VIEW RECOMMENDED LAND PATTERN DOC-58196 0.10 C 0.10 0.05 0.85±0.05 0.05 C C A B C ALL FEATURES SEATING PLANE 0.203 0.05 C SIDE VIEW Figure 33. Top Marking Specifications 42520 YYWW ZZZZZZ = Pin 1 designator YY = Last two digits of assembly year WW = Assembly work week DOC-66052 Document No. DOC-73010-3 | www.psemi.com ZZZZZ = Assembly lot code (maximum six characters) ©2015–2021 pSemi Corporation All rights reserved. Page 15 of 16 PE42520 Product Specification Figure 34. Tape and Reel Specifications Direction of Feed Ao Bo Ko F P1 W 3.30 ± 0.1 3.30 ± 0.1 1.10 ± 0.1 5.50 ± 0.05 8.00 ± 0.1 12.00 ± 0.3 Notes: 1. Measured from centerline of sprocket hole to centerline of pocket. Pin 1 2. Cumulative tolerance of 10 sprocket holes ± 0.20. 3. Measured from centerline of sprocket hole to centerline of sprocket. Dimensions are in millimeters unless otherwise specified. Device Orientation in Tape Table 7. Ordering Information Order Code Description Package Shipping Method PE42520C-Z PE42520 SPDT RF switch Green 16-lead 3 × 3 mm QFN 3000 units / T&R EK42520-03 PE42520 Evaluation kit Evaluation kit 1 / Box Sales Contact and Information For sales and contact information please visit www.psemi.com. ©2015–2021 pSemi Corporation All rights reserved. Page 16 of 16 Document No. DOC-73010-3 | UltraCMOS® RFIC Solutions