PE42524A-X

PE42524 Document Category: Product Specification UltraCMOS® SPDT RF Switch, 10 MHz–40 GHz Features Figure 1 • PE42524 Functional Diagram • Wideband support up to 40 GHz • High port to port isolation RFC ▪ 48 dB @ 26.5 GHz ▪ 39 dB @ 35 GHz ▪ 33 dB @ 40 GHz • Excellent linearity performance RF1 RF2 ▪ P1dB of 31.5 dBm @ 26.5 GHz ▪ P1dB of 28.0 dBm @ 35 GHz ▪ IIP3 of 50 dBm @ 13.5 GHz ESD • Fast RF Trise/Tfall time of 55 ns • Low insertion loss V1 V2 ▪ 1.8 dB @ 26.5 GHz ▪ 3.1 dB @ 35 GHz • Flip-chip die Applications • Test and measurement • Microwave backhaul • Radar • Military communications Product Description The PE42524 is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency range from 10 MHz to 40 GHz. This wideband flip-chip switch delivers high isolation performance, excellent linearity and low insertion loss, making this device ideal for test and measurement (T&M), microwave backhaul, radar and military communications (mil-comm) applications. At 30 GHz, the PE42524 exhibits 17 dB active port return loss, 47 dB isolation and 2.2 dB insertion loss. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42524 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. ©2014-2015, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-48614-4 – (12/2015) www.psemi.com PE42524 SPDT RF Switch Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 • Absolute Maximum Ratings for PE42524 Parameter/Condition Min Max Unit Control voltage (V1, V2) –3.5 3.5 V Fig. 2 dBm +150 °C 2000 V RF input power (RFC–RFX, 50Ω) Storage temperature range –65 ESD voltage HBM, all pins(*) Note: * Human body model (MIL-STD883 Method 3015). Page 2 DOC-48614-4 – (12/2015) www.psemi.com PE42524 SPDT RF Switch Recommended Operating Conditions Table 2 lists the recommended operating conditions for PE42524. Devices should not be operated outside the recommended operating conditions listed below. Table 2 • Recommended Operating Condition for PE42524 Parameter Min Typ Max Unit Control high (V1, V2) 3.1 3.3 3.5 V Control low (V1, V2) –3.5 –3.3 –3.1 V Control current 2 nA RF input power, CW (RFC–RFX)(1) Fig. 2 dBm RF input power, pulsed (RFC–RFX)(2) Fig. 2 dBm +85 °C Operating temperature range –40 +25 Notes: 1) 100% duty cycle, all bands, 50Ω. 2) Pulsed, 5% duty cycle of 4620 μs period, 50Ω. Electrical Specifications Table 3 provides the PE42524 key electrical specifications @ 25 °C, V1 = +3.3V, V2 = –3.3V or V1 = –3.3V, V2 = +3.3V (ZS = ZL = 50Ω), unless otherwise specified. Table 3 • PE42524 Electrical Specifications Parameter Path Condition Typ 10 MHz Operation frequency Insertion loss Min RFC–RFX 10 MHz 10 MHz–7.5 GHz 7.5–10 GHz 10–13.5 GHz 13.5–18 GHz 18–20 GHz 20–26.5 GHz 26.5–30 GHz 30–35 GHz 35–40 GHz DOC-48614-4 – (12/2015) 0.6 1.0 1.1 1.3 1.4 1.4 1.8 2.2 3.1 5.5 Max Unit 40 GHz As shown 0.85 1.30 1.50 1.65 1.75 1.75 2.20 2.70 4.10 — dB dB dB dB dB dB dB dB dB dB Page 3 www.psemi.com PE42524 SPDT RF Switch Table 3 • PE42524 Electrical Specifications Parameter Path Condition Min Typ Max Unit 74 60 58 51 50 49 44 43 35 28 84 64 65 58 53 52 48 47 39 33 dB dB dB dB dB dB dB dB dB dB All paths 10 MHz 10 MHz–7.5 GHz 7.5–10 GHz 10–13.5 GHz 13.5–18 GHz 18–20 GHz 20–26.5 GHz 26.5–30 GHz 30–35 GHz 35–40 GHz RFC–RFX 10 MHz 10 MHz–7.5 GHz 7.5–10 GHz 10–13.5 GHz 13.5–18 GHz 18–20 GHz 20–26.5 GHz 26.5–30 GHz 30–35 GHz 35–40 GHz 25 16 15 17 21 21 18 17 14 6 dB dB dB dB dB dB dB dB dB dB RFC–RFX 10 MHz 10 MHZ–7.5 GHz 7.5–10 GHz 10–13.5 GHz 13.5–18 GHz 18–20 GHz 20–26.5 GHz 26.5–30 GHz 30–35 GHz 35–40 GHz 25 18 19 26 29 23 31 30 16 7 dB dB dB dB dB dB dB dB dB dB RFC–RFX +25 dBm output power, 1 GHz +25 dBm output power, 6.5 GHz +25 dBm output power, 15 GHz 88 84 >89(1) dBc dBc dBc Input 1dB compression point(2) 10 MHz–40 GHz Fig. 2 dBm Input IP3 10–100 MHz 1–2 GHz 6–10 GHz 10–13.5 GHz 48 50 52 50 dBm dBm dBm dBm Video feedthrough(3) DC measurement 3.5 mVPP RF Trise/Tfall 10%/90% RF 55 ns Settling time 50% CTRL to 0.05 dB final value Isolation Return loss (active port) Return loss (RFC port) 2nd harmonic, 2fo rejection Page 4 0.84 1.13 μs DOC-48614-4 – (12/2015) www.psemi.com PE42524 SPDT RF Switch Table 3 • PE42524 Electrical Specifications Parameter Path Switching time Condition Min 50% CTRL to 90% or 10% RF Typ Max Unit 225 304 ns Notes: 1) Test system limited. 2) The input 1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω). 3) Measured with a 3.5 ns rise time, –3.3 / +3.3V pulse and 500 MHz bandwidth. Control Logic Table 4 • Truth Table for PE42524 Table 4 provides the control logic truth table for the PE42524. States 2 and 3 are used in normal switching operations. V1 V2 RF1 RF2 State –3.3V –3.3V OFF OFF 1 –3.3V +3.3V OFF ON 2 +3.3V –3.3V ON OFF 3 +3.3V +3.3V ON ON 4 Figure 2 • Power De-rating Curve (10 MHz–40 GHz) @ 25 °C and 85 °C Ambient (50Ω) P1 dB Compression / Abs. Max. RF Input Power @ 25°C & 85°C Ambient Max. RF Input Power, Pulsed @ 25°C & 85°C Ambient Input Power (dBm) Max. RF Input Power, CW @ 25°C & 85°C Ambient 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 0.01 5.01 10.01 15.01 20.01 25.01 30.01 35.01 40.01 Frequency (GHz) DOC-48614-4 – (12/2015) Page 5 www.psemi.com PE42524 SPDT RF Switch Typical Performance Data Figure 3–Figure 12 show the typical performance data @ 25 °C, V1 = +3.3V, V2 = –3.3V, unless otherwise specified. Figure 3 • Insertion Loss vs Temperature (RFC–RFX) −40°C +25°C +85°C 0 Insertion Loss (dB) −2 −4 −6 −8 −10 0 5 10 15 20 25 30 35 40 30 35 40 Frequency (GHz) Figure 4 • Insertion Loss vs V1/V2 (RFC–RFX) +3.1V/−3.1V +3.3V/−3.3V 0 Insertion Loss (dB) −2 −4 −6 −8 −10 0 5 10 15 20 25 Frequency (GHz) Page 6 DOC-48614-4 – (12/2015) www.psemi.com PE42524 SPDT RF Switch Figure 5 • RFC Port Return Loss vs Temperature −40°C +25°C +85°C Return Loss (dB) −10 −15 −20 −25 −30 −35 −40 0 5 10 15 20 25 30 35 40 30 35 40 Frequency (GHz) Figure 6 • RFC Port Return Loss vs V1/V2 +3.1V/−3.1V +3.3V/−3.3V Return Loss (dB) −10 −15 −20 −25 −30 −35 −40 0 5 10 15 20 25 Frequency (GHz) DOC-48614-4 – (12/2015) Page 7 www.psemi.com PE42524 SPDT RF Switch Figure 7 • Active Port Return Loss vs Temperature −40°C +25°C +85°C Return Loss (dB) −10 −15 −20 −25 −30 −35 −40 0 5 10 15 20 25 30 35 40 30 35 40 Frequency (GHz) Figure 8 • Active Port Return Loss vs V1/V2 +3.1V/−3.1V +3.3V/−3.3V Return Loss (dB) −10 −15 −20 −25 −30 −35 −40 0 5 10 15 20 25 Frequency (GHz) Page 8 DOC-48614-4 – (12/2015) www.psemi.com PE42524 SPDT RF Switch Figure 9 • Isolation vs Temperature (RFX–RFX) −40°C +25°C +85°C 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 0 5 10 15 20 25 30 35 40 30 35 40 Frequency (GHz) Figure 10 • Isolation vs V1/V2 (RFX–RFX) +3.1V/−3.1V +3.3V/−3.3V 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 0 5 10 15 20 25 Frequency (GHz) DOC-48614-4 – (12/2015) Page 9 www.psemi.com PE42524 SPDT RF Switch Figure 11 • Isolation vs Temperature (RFC–RFX) −40°C +25°C +85°C 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 0 5 10 15 20 25 30 35 40 30 35 40 Frequency (GHz) Figure 12 • Isolation vs V1/V2 (RFC–RFX) +3.1V/−3.1V +3.3V/−3.3V 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 0 5 10 15 20 25 Frequency (GHz) Page 10 DOC-48614-4 – (12/2015) www.psemi.com PE42524 SPDT RF Switch Recommended Evaluation Setup The PE42524 s-parameter data and input 1dB compression point from 22–40 GHz (Table 3 and Figure 3– Figure 12) were taken using grounded co-planar waveguide (CPWG) on the alumina substrate (shown in Figure 13) and RF probes. The PE42524 2nd harmonic, 2fo rejection, input 1dB compression point below 18 GHz, input IP3 measurements, settling time and switching time (Table 3) were taken on a PCB using 2.92 mm connectors. Bypass capacitors are not required. PCB using 2.92 mm connectors.pacitors are not required Figure 13 • Alumina Substrate Board for PE42524 Alumina substrate board Thickness: 0.01 in. εR = 9.9 RFC RF2 PE42524 DIE V1 RF1 V2 DOC-48614-4 – (12/2015) Page 11 www.psemi.com PE42524 SPDT RF Switch Pin Configuration Table 5 • Pin Descriptions for PE42524 This section provides pin information for the PE42524. Figure 14 shows the pin configuration of this device. Table 5 provides a description for each pin. Figure 14 • Pin Configuration (Bumps Up) for PE42524 9 GND GND RFC Pin Name 1, 2, 5, 6, 8–10, 12– 14, 16–19 GND Ground 7 RF1 RF port 1 11 RFC RF common port 15 RF2 RF port 2 3 V1 Control input 1 4 V2 Control input 2 13 GND 10 Pin No. GND 12 Description 11 GND GND 8 14 GND GND 18 16 RF1 7 GND 5 RF2 GND GND 19 17 15 GND GND 6 2 V2 V1 4 3 GND 1 Page 12 DOC-48614-4 – (12/2015) www.psemi.com PE42524 SPDT RF Switch Die Mechanical Specifications This section provides the die mechanical specifications for the PE42524. Table 6 • Mechanical Specifications for PE42524 Parameter Min Typ Max Unit Die size, singulated (x, y) 2466 × 2120 2486 × 2140 2516 × 2170 μm 180 200 220 μm Wafer thickness Wafer size 150 Bump pitch 500 Bump height 72.5 Bump diameter UBM diameter Including excess sapphire, max. tolerance = –20 / +30 μm mm μm 85 97.75 90 μm μm 110 85 Test Condition 95 DOC-48614-4 – (12/2015) μm Page 13 www.psemi.com PE42524 SPDT RF Switch Table 7 • Pin Coordinates for PE42524(*) Figure 15 • Pin Layout for PE42524(1)(2) Pin Center (μm) Pin Name X 9 Y 1 GND 1128.5 –958.5 2 GND 731.5 –646.5 3 V1 253.5 –958.5 4 V2 –253.5 –958.5 GND GND 13 GND RFC 10 GND 12 11 GND 5 GND –1128.5 –958.5 6 GND –731.5 –646.5 7 RF1 –785.5 –121.5 8 GND –931.5 363.5 9 GND –1091.5 913.5 10 GND –503.5 753.5 11 RFC 0 629 12 GND 503.5 753.5 13 GND 1091.5 913.5 14 GND 931.5 363.5 15 RF2 785.5 –121.5 16 GND 253.5 183.5 17 GND 253.5 –326.5 18 GND –253.5 183.5 19 GND –253.5 –326.5 GND 8 GND GND 18 16 14 RF1 7 GND 5 2140 μm (−20 / +30 μm) Pin # RF2 GND GND 19 17 15 GND GND 6 2 V2 V1 4 3 GND 1 2486 μm (−20 / +30 μm) Notes: 1) Drawings are not drawn to scale. 2) Singulated die size shown, bump side up. Note: * All pin locations originate from the die center and refer to the center of the pin. Page 14 DOC-48614-4 – (12/2015) www.psemi.com PE42524 SPDT RF Switch Tape and Reel Specification This section provides the tape and reel specifications for the PE42524. Figure 16 • Tape and Reel Specifications for PE42524 ø1.50 ± 0.1 0.20 ± 0.05 2.00 ± 0.05 4.00 ± 0.1 4.00 ± 0.1 1.75 ± 0.1 3.50 ± 0.05 Bo 8.00 ± 0.1 ø0.50 ± 0.05 Ko Ao Pocket Nominal Tolerance Ao 2.35 ± 0.05 Bo 2.66 ± 0.05 Ko 0.395 ± 0.05 Pin 1 Notes: Not Drawn to Scale Dimensions are in millimeters Maximum cavity angle 5 degrees Bumped die are oriented active side down Device Orientation in Tape DOC-48614-4 – (12/2015) Page 15 www.psemi.com PE42524 SPDT RF Switch Ordering Information Table 8 lists the available ordering code for the PE42524 as well as shipping method. Table 8 • Order Code for PE42524 Order Code Description Packaging Shipping Method PE42524A–X PE42524 SPDT RF switch Die on tape and reel 500 die / T&R Document Categories Advance Information Product Brief The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and features may change in any manner without notice. This document contains a shortened version of the datasheet. For the full datasheet, contact sales@psemi.com. Preliminary Specification Not Recommended for New Designs (NRND) This product is in production but is not recommended for new designs. The datasheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The datasheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a CNF (Customer Notification Form). End of Life (EOL) This product is currently going through the EOL process. It has a specific last-time buy date. Obsolete This product is discontinued. Orders are no longer accepted for this product. Sales Contact For additional information, contact Sales at sales@psemi.com. Disclaimers The information in this document is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party. Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. Patent Statement Peregrine products are protected under one or more of the following U.S. patents: patents.psemi.com Copyright and Trademark ©2014-2015, Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo, UTSi and UltraCMOS are registered trademarks and HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp. Product Specification www.psemi.com DOC-48614-4 – (12/2015)