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PE42582A-X

PE42582A-X

  • 厂商:

    PEREGRINE(游隼半导体)

  • 封装:

    QFN24_4X4MM

  • 描述:

    PE42582A-X

  • 数据手册
  • 价格&库存
PE42582A-X 数据手册
PE42582 Document Category: Product Specification UltraCMOS® SP8T RF Switch, 9 kHz–8 GHz Features Figure 1 • PE42582 Functional Diagram • High isolation: 41 dB @ 6 GHz • Low insertion loss: 1.1 dB @ 6 GHz RFC • Fast switching time of 227 ns • Power handling of 33 dBm CW • Logic select (LS) pin provides maximum control logic flexibility • Terminated all-off state mode • External VSS pin to eliminate spur • Packaging – 24-lead 4 × 4 × 0.85 mm QFN RF1 RF8 RF2 RF7 RF3 RF6 RF4 RF5 CMOS Control Driver and ESD Applications switch configuration V1 V2 V3 V4 VSS_EXT • Test and measurement • Wireless applications up to 8 GHz • Filter bank switching 50Ω • RF signal routing Product Description The PE42582 is a HaRP™ technology-enhanced absorptive SP8T RF switch that supports a frequency range from 9 kHz to 8 GHz. An external VSS pin is available for bypassing the internal negative voltage generator in order for the PE42582 to deliver spur-free performance. It delivers high isolation, low insertion loss and fast switching time, making this device ideal for filter bank switching and RF signal routing in test and measurement (T&M) and wireless applications up to 8 GHz. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42582 is manufactured on Peregrine’s UltraCMOS® process, a patented advanced form of silicon-oninsulator (SOI) technology. Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. ©2017, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Optional External VSS For proper operation, the VSS_EXT pin must be grounded or tied to the VSS voltage specified in Table 2. When the VSS_EXT pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applications that require the lowest possible spur performance, VSS_EXT can be applied externally to bypass the internal negative voltage generator. Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 • Absolute Maximum Ratings for PE42582 Parameter/Condition Min Max Unit Supply voltage, VDD –0.3 5.5 V Digital input voltage (V1, V2, V3, V4, LS) –0.3 3.6 V RF input power (RFC–RFX, 50Ω) See Figure 2 dBm RF input power into terminated ports, CW(1) (RFX, 50Ω) See Figure 2 dBm +150 °C +150 °C ESD voltage HBM, all pins(2) 1000 V ESD voltage CDM, all pins(3) 1000 V Maximum junction temperature Storage temperature range –65 Notes: 1) 100% duty cycle, all bands, 50Ω. 2) Human body model (MIL-STD 883 Method 3015). 3) Charged device model (JEDEC JESD22-C101). Page 2 DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Recommended Operating Conditions Table 2 lists the recommended operating conditions for the PE42582. Devices should not be operated outside the recommended operating conditions listed below. Table 2 • Recommended Operating Conditions for PE42582 Parameter Min Typ Max Unit 2.3 3.3 5.5 V 120 200 µA 3.4 5.5 V 80 160 µA –2.7 V Normal mode (VSS_EXT = 0V)(1) Supply voltage, VDD Supply current, IDD Bypass mode (VSS_EXT = –3.4V)(2) Supply voltage, VDD 3.1 (Table 3 spec. compliance applies for VDD ≥ 3.4V) Supply current, IDD Negative supply voltage, VSS_EXT –3.3 –3.0 Negative supply current, ISS –40 –16 µA Normal or Bypass mode Digital input high (V1, V2, V3, V4, LS) 1.17 3.6 V Digital input low (V1, V2, V3, V4, LS) –0.3 0.6 V 5 10 µA µA RF input power, CW (RFC–RFX)(3) See Figure 2 dBm RF input power, pulsed (RFC–RFX)(4) See Figure 2 dBm RF input power into terminated ports, CW (RFX)(3) See Figure 2 dBm +105 °C Digital input current V1, V2, V3, V4 LS Operating temperature range –40 +25 Notes: 1) Normal mode: connect VSS_EXT (pin 7) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. 2) Bypass mode: use VSS_EXT (pin 7) to bypass and disable internal negative voltage generator. 3) 100% duty cycle, all bands, 50Ω. 4) Pulsed, 5% duty cycle of 4620 µs period, 50Ω. DOC-76247-3 – (03/2017) Page 3 www.psemi.com PE42582 SP8T RF Switch Electrical Specifications Table 3 provides the PE42582 key electrical specifications at +25 °C (ZS = ZL = 50Ω), unless otherwise specified. Normal mode(1) is at VDD = 3.3V and VSS_EXT = 0V. Bypass mode(2) is at VDD = 3.4V and VSS_EXT = –3.0V. Table 3 • PE42582 Electrical Specifications Parameter Path Condition Operating frequency Min Typ 9 kHz Max Unit 8 GHz As shown RFC–RF1/8 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 0.7 0.8 0.9 0.9 1.1 1.6 0.9 1.0 1.2 1.5 1.9 2.8 dB dB dB dB dB dB RFC–RF2/7 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 0.8 0.9 0.9 1.0 1.3 1.3 1.0 1.1 1.3 1.6 2.3 2.4 dB dB dB dB dB dB RFC–RF3/6 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 0.8 0.9 1.0 1.1 1.2 1.3 1.0 1.1 1.3 1.7 2.2 2.2 dB dB dB dB dB dB RFC–RF4/5 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 0.9 1.1 1.2 1.3 1.4 1.5 1.1 1.3 1.6 1.9 2.2 2.8 dB dB dB dB dB dB Insertion loss(3) Page 4 DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Table 3 • PE42582 Electrical Specifications (Cont.) Parameter Path Min Typ RFC–RF1/8 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 61 45 39 34 29 25 65 47 41 36 32 30 dB dB dB dB dB dB RFC–RF2/7 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 63 50 45 38 30 29 67 53 47 41 34 34 dB dB dB dB dB dB RFC–RF3/6 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 64 51 46 38 33 29 68 53 48 40 35 31 dB dB dB dB dB dB RFC–RF4/5 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 81 57 50 45 38 33 85 62 56 48 41 38 dB dB dB dB dB dB Isolation(3) Condition DOC-76247-3 – (03/2017) Max Unit Page 5 www.psemi.com PE42582 SP8T RF Switch Table 3 • PE42582 Electrical Specifications (Cont.) Parameter Path Condition Min Typ Max Unit RFC–RF1/8 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 25 24 24 21 26 13 dB dB dB dB dB dB RFC–RF2/7 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 24 23 20 18 15 16 dB dB dB dB dB dB RFC–RF3/6 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 24 23 18 15 12 12 dB dB dB dB dB dB RFC–RF4/5 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 24 23 17 15 16 18 dB dB dB dB dB dB Return loss (active port) Page 6 DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Table 3 • PE42582 Electrical Specifications (Cont.) Parameter Path Condition Min Typ Max Unit RFC–RF1/8 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 25 23 24 23 24 12 dB dB dB dB dB dB RFC–RF2/7 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 24 23 21 19 20 18 dB dB dB dB dB dB RFC–RF3/6 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 24 23 19 16 13 13 dB dB dB dB dB dB RFC–RF4/5 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 24 22 18 16 17 17 dB dB dB dB dB dB Return loss (RFC port) DOC-76247-3 – (03/2017) Page 7 www.psemi.com PE42582 SP8T RF Switch Table 3 • PE42582 Electrical Specifications (Cont.) Parameter Path Min Typ Max Unit RF1/8 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 16 15 15 15 18 21 dB dB dB dB dB dB RF2/7 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 16 15 15 15 18 19 dB dB dB dB dB dB RF3/6 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 16 15 15 15 16 19 dB dB dB dB dB dB RF4/5 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 16 15 15 16 23 16 dB dB dB dB dB dB Return loss (terminated port) Relative insertion phase(4) Condition RF2–RF1 (RF7–RF8) 1 GHz 2 GHz 4 GHz 6 GHz 8 GHz –2.6 –4.7 –7.5 –9.4 –1.4 –1.3 –2.4 –3.4 –2.8 4.4 0 –0.1 0.8 3.8 10.1 Deg Deg Deg Deg Deg RF3–RF1 (RF6–RF8) 1 GHz 2 GHz 4 GHz 6 GHz 8 GHz –3.0 –5.8 –9.3 –11.2 –10.2 –2.1 –4.0 –5.6 –5.7 –1.0 –1.3 –2.1 –1.9 –0.3 8.2 Deg Deg Deg Deg Deg RF4–RF1 (RF5–RF8) 1 GHz 2 GHz 4 GHz 6 GHz 8 GHz –6.9 –13.3 –24.7 –35.8 –45.3 –5.6 –10.7 –18.9 –26.3 –31.5 –4.3 –8.2 –13.0 –16.9 –17.6 Deg Deg Deg Deg Deg Input 1dB compression point(5) RFC–RFX See Figure 2 dBm Input 0.1dB compression point(5) RFC–RFX See Figure 2 dBm Page 8 DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Table 3 • PE42582 Electrical Specifications (Cont.) Parameter Path Condition Min Typ Max Unit Input IP2 RFC–RFX 5 MHz 100 MHz–8 GHz 75 105 dBm dBm Input IP3 RFC–RFX 5 MHz 100 MHz–8 GHz 53 60 dBm dBm RF TRISE/TFALL 10%/90% RF 100 130 ns Settling time 50% CTRL to 0.05 dB final value 870 1400 ns Switching time 50% CTRL to 90% or 10% of RF 227 290 ns Notes: 1) Normal mode: connect VSS_EXT (pin 7) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. 2) Bypass mode: use VSS_EXT (pin 7) to bypass and disable internal negative voltage generator. 3) Insertion loss and isolation performance can be improved by a good RF ground on the LS pin (pin 1). 4) Defined with S-parameters, relative insertion phase (RFX–RF1) = ∠S(x+1)1 – ∠S21, where incident Port-1 is RFC, response Port-2 = RF1, and response Port-(x+1) = RFx. 5) The input 1dB and 0.1dB compression points are linearity figures of merit. Refer to Table 2 for the RF input power (50Ω). Switching Frequency Thermal Data The PE42582 has a maximum 25 kHz switching frequency in normal mode (pin 7 tied to ground). A faster switching frequency is available in bypass mode (pin 7 tied to VSS_EXT). The rate at which the PE42582 can be switched is then limited to the switching time as specified in Table 3. Psi-JT (ΨJT), junction top-of-package, is a thermal metric to estimate junction temperature of a device on the customer application PCB (JEDEC JESD51-2). Switching frequency describes the time duration between switching events. Switching time is the time duration between the point the control signal reached 50% of the final value and the point the output signal reaches within 10% or 90% of its target value. ΨJT = junction-to-top of package characterization ΨJT = (TJ – TT)/P where Spur-Free Performance The PE42582 spur fundamental occurs around 5 MHz. Its typical performance in normal mode is –162 dBm/Hz (pin 7 tied to ground), with 30 kHz bandwidth. If spur-free performance is desired, the internal negative voltage generator can be disabled by applying a negative voltage to VSS_EXT (pin 7). Hot-Switching Capability parameter, °C/W TJ = die junction temperature, °C TT = package temperature (top surface, in the center), °C P = power dissipated by device, Watts Table 4 • Thermal Data for PE42582 Parameter Typ Unit ΨJT 23 °C/W ΘJA, junction-to-ambient thermal resistance 63 °C/W The maximum hot switching capability of the PE42582 is 20 dBm above 100 MHz. Hot switching occurs when RF power is applied while switching between RF ports. DOC-76247-3 – (03/2017) Page 9 www.psemi.com PE42582 SP8T RF Switch Control Logic Table 5 provides the control logic truth table for PE42582. Table 5 • Truth Table for PE42582 LS(1) V4 V3 V2 V1 RFC–RF1 RFC–RF2 RFC–RF3 RFC–RF4 RFC–RF5 RFC–RF6 RFC–RF7 RFC–RF8 0 0 0 0 0 ON OFF OFF OFF OFF OFF OFF OFF 0 0 1 0 0 OFF ON OFF OFF OFF OFF OFF OFF 0 0 0 1 0 OFF OFF ON OFF OFF OFF OFF OFF 0 0 1 1 0 OFF OFF OFF ON OFF OFF OFF OFF 0 0 0 0 1 OFF OFF OFF OFF ON OFF OFF OFF 0 0 1 0 1 OFF OFF OFF OFF OFF ON OFF OFF 0 0 0 1 1 OFF OFF OFF OFF OFF OFF ON OFF 0 0 1 1 1 OFF OFF OFF OFF OFF OFF OFF ON 1 0 1 1 1 ON OFF OFF OFF OFF OFF OFF OFF 1 0 0 1 1 OFF ON OFF OFF OFF OFF OFF OFF 1 0 1 0 1 OFF OFF ON OFF OFF OFF OFF OFF 1 0 0 0 1 OFF OFF OFF ON OFF OFF OFF OFF 1 0 1 1 0 OFF OFF OFF OFF ON OFF OFF OFF 1 0 0 1 0 OFF OFF OFF OFF OFF ON OFF OFF 1 0 1 0 0 OFF OFF OFF OFF OFF OFF ON OFF 1 0 0 0 0 OFF OFF OFF OFF OFF OFF OFF ON X(2) 1 0 0 0 OFF OFF OFF OFF OFF OFF OFF OFF Notes: 1) LS has an internal 1 MΩ pull-up resistor to logic high. Connect LS to GND externally to generate a logic 0. Leaving LS floating will generate a logic 1. 2) LS = don’t care, V4 = 1, V3 = V2 = V1 = 0, all ports are terminated to provide an all isolated state. Page 10 DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Power De-rating Curve Figure 2 shows the power de-rating curve showing P1dB compression, P0.1dB compression, maximum RF input power (pulsed), maximum RF input power (CW), absolute maximum RF terminated power (CW), and maximum RF terminated power (CW). Figure 2 • Power De-rating Curve, 9 kHz–8 GHz, –40 °C to +105 °C Ambient, 50Ω P1dB Compression @ 25 °C Ambient/Abs. Max. RF Input Power P0.1dB Compression @ 25 °C Max. RF Input Power, Pulsed Max. RF Input Power, CW Abs. Max. RF Terminated Power, CW Max. RF Terminated Power, CW Input Power (dBm) 45 40 35 30 25 20 15 10 5 0.001 0.01 0.1 1 10 100 1000 10000 Frequency (MHz) DOC-76247-3 – (03/2017) Page 11 www.psemi.com PE42582 SP8T RF Switch Isolation Matrix Table 6 provides RFC-to-port isolation and Table 7 provides port-to-port isolation at +25 °C, VDD = 3.3V (ZS = ZL = 50Ω). Normal mode(1) is at VDD = 3.3V and VSS_EXT = 0V. Bypass mode(2) is at VDD = 3.4V and VSS_EXT = –3.0V. Table 6 • RFC-to-Port Isolation Isolation (dB) “ON” Port Frequency RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8 RF1 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz – – – – – – 69 62 57 48 37 34 68 53 48 40 35 31 85 62 56 49 44 41 91 74 68 63 55 56 88 66 60 54 50 47 87 64 58 52 46 45 79 57 51 45 42 38 RF2 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 67 52 46 39 32 30 – – – – – – 69 60 57 49 43 37 90 67 62 54 49 46 91 74 68 63 56 55 88 66 60 53 50 47 86 64 57 52 46 46 77 56 50 45 42 40 RF3 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 65 47 42 36 33 31 68 55 51 44 40 36 – – – – – – 86 66 57 50 42 39 91 74 68 63 56 55 88 66 60 53 49 46 85 63 57 52 47 47 77 55 50 45 42 40 RF4 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 65 47 41 36 33 32 67 53 47 41 36 34 68 56 51 44 38 34 – – – – – – 90 75 69 63 55 50 89 66 59 53 49 47 85 63 57 51 46 47 76 55 49 44 41 40 RF5 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 73 51 45 40 37 34 84 61 56 49 45 43 89 65 59 52 48 46 90 75 68 61 56 51 – – – – – – 68 57 52 45 39 34 68 53 48 41 36 35 66 49 44 38 35 34 RF6 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 73 51 45 40 37 34 84 62 56 49 46 44 88 65 59 53 49 45 93 73 67 61 57 55 85 64 56 48 41 38 – – – – – – 68 56 51 46 38 37 66 50 45 39 35 33 Page 12 DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Table 6 • RFC-to-Port Isolation (Cont.) Isolation (dB) “ON” Port Frequency RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8 RF7 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 73 51 45 40 37 34 84 62 56 49 45 43 89 65 59 53 49 46 92 73 67 61 57 56 88 68 63 56 50 47 69 60 57 50 41 38 – – – – – – 68 57 52 44 33 33 RF8 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 74 52 46 40 37 33 84 62 57 49 46 42 87 66 60 53 49 46 93 73 67 60 57 55 85 63 57 50 46 42 68 54 48 41 35 31 69 65 60 51 34 35 – – – – – – Notes: 1) Normal mode: connect VSS_EXT (pin 7) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. 2) Bypass mode: use VSS_EXT (pin 7) to bypass and disable internal negative voltage generator. Table 7 • Port-to-Port Isolation Isolation (dB) “ON” Port Frequency RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8 RF1 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz – – – – – – 65 47 41 35 31 29 67 51 45 39 34 30 84 59 53 47 43 40 91 75 70 64 57 57 89 69 63 57 52 49 89 71 65 60 47 47 88 64 60 53 45 43 RF2 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 65 46 41 35 32 29 – – – – – – 64 45 39 34 30 27 78 55 49 43 41 38 90 75 69 65 57 58 91 70 64 58 53 50 92 75 69 64 50 50 89 74 72 63 51 51 RF3 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 67 51 46 40 37 33 65 47 41 36 33 30 – – – – – – 69 47 41 36 33 30 94 75 70 65 57 57 90 70 64 58 53 50 92 78 72 66 51 51 91 80 79 68 54 54 DOC-76247-3 – (03/2017) Page 13 www.psemi.com PE42582 SP8T RF Switch Table 7 • Port-to-Port Isolation (Cont.) Isolation (dB) “ON” Port Frequency RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8 RF4 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 68 53 47 42 38 34 67 52 46 41 36 35 63 44 39 33 30 28 – – – – – – 90 71 66 61 54 55 89 69 64 58 53 50 89 78 71 65 50 50 91 79 80 68 54 54 RF5 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 88 79 66 57 50 47 91 80 73 66 52 53 89 70 64 58 53 51 90 71 66 61 55 56 – – – – – – 63 44 39 33 30 28 67 52 46 41 36 35 68 52 46 40 36 33 RF6 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 90 77 65 56 49 46 92 82 75 66 52 53 89 70 65 58 53 50 91 75 70 64 59 57 69 46 41 35 33 30 – – – – – – 65 47 42 36 32 31 67 51 45 39 35 32 RF7 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 92 85 70 57 48 46 92 77 72 64 52 51 89 70 64 58 53 50 90 76 71 65 59 57 78 55 50 44 40 39 64 45 39 34 30 27 – – – – – – 64 45 40 35 29 30 RF8 9 kHz–100 MHz 100 MHz–1 GHz 1–2 GHz 2–4 GHz 4–6 GHz 6–8 GHz 87 69 67 56 46 42 91 73 67 61 49 49 88 69 63 57 52 49 90 75 70 64 59 56 82 59 54 47 43 41 67 51 45 39 34 30 65 47 41 35 29 29 – – – – – – Page 14 DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Typical Performance Data Figure 3–Figure 20 show the typical performance data at +25 °C,VDD = 3.3V (ZS = ZL = 50Ω), unless otherwise specified. Figure 3 • Insertion Loss vs. Frequency (RFC–RFX) RFC-RF2 RFC-RF4 RFC-RF6 RFC-RF8 2.3V Insertion Loss (dB) Insertion Loss (dB) RFC-RF1 RFC-RF3 RFC-RF5 RFC-RF7 Figure 5 • Insertion Loss vs. Frequency Over VDD (RFC–RF1) 0 -1 -2 -3 -4 -5 -6 -7 -8 5.5V 0 -1 -2 -3 -4 -5 -6 -7 -8 0 2 4 6 8 0 2 Frequency (GHz) 4 6 8 Frequency (GHz) Figure 4 • Insertion Loss vs. Frequency Over Temperature (RFC–RF1) Figure 6 • RFC Port Return Loss vs. Frequency -40 °C +25 °C RF1 On RF2 On RF3 On RF4 On +85 °C +105 °C RF5 On RF6 On RF7 On RF8 On 0 -1 -2 -3 -4 -5 -6 -7 -8 0 Return Loss (dB) Insertion Loss (dB) 3.3V 0 2 4 6 -10 -20 -30 -40 -50 -60 8 0 Frequency (GHz) 2 4 6 8 Frequency (GHz) DOC-76247-3 – (03/2017) Page 15 www.psemi.com PE42582 SP8T RF Switch Figure 7 • RFC Port Return Loss vs. Frequency Over Temperature (RF1 On) -40 °C +25 °C +85 °C Figure 10 • RF1 Active Port Return Loss vs. Frequency Over Temperature +105 °C -40 °C Return Loss (dB) -10 -20 -30 -40 -50 -60 0 2 4 6 -20 -30 -40 -50 -60 8 0 2 4 2.3V 6 8 Frequency (GHz) Figure 8 • RFC Port Return Loss vs. Frequency Over VDD (RF1 On) 3.3V Figure 11 • RF1 Active Port Return Loss vs. Frequency Over VDD 5.5V 2.3V 0 3.3V 5.5V 0 -10 Return Loss (dB) Return Loss (dB) +105 °C -10 Frequency (GHz) -20 -30 -40 -50 -60 -10 -20 -30 -40 -50 -60 0 2 4 6 8 0 2 Figure 9 • Active Port Return Loss vs. Frequency RF1 RF4 RF7 RF2 RF5 RF8 RF3 RF6 Return Loss (dB) 0 -20 -30 -40 -50 -60 1 2 3 4 5 6 8 Figure 12 • Terminated Port Return Loss vs. Frequency (RF1 On) -10 0 4 Frequency (GHz) Frequency (GHz) Return Loss (dB) +85 °C 0 0 Return Loss (dB) +25 °C 6 7 8 RF3 RF4 RF6 RF7 RF8 RF5 0 -10 -20 -30 -40 -50 -60 -70 -80 0 Frequency (GHz) RF2 2 4 6 8 Frequency (GHz) Page 16 DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Figure 13 • RF2 Terminated Port Return Loss vs. Frequency Over Temperature (RF1 On) +25 °C +85 °C +105 °C 2.3V 0 0 -10 -10 Isolation (dB) Return Loss (dB) -40 °C Figure 16 • Isolation vs.Frequency Over VDD (RF1–RF2, RF1 On) -20 -30 -40 -50 -60 -70 -20 -30 -40 -50 -60 -80 0 2 4 6 8 0 2 Frequency (GHz) 2.3V 4 6 8 Frequency (GHz) Figure 14 • RF2 Terminated Port Return Loss vs. Frequency Over VDD (RF1 On) 3.3V Figure 17 • Isolation vs. Frequency Over Temperature (RFC–RF2, RF1 On) -40 °C 5.5V 0 0 -10 -10 Isolation (dB) Return Loss (dB) 5.5V -70 -80 -20 -30 -40 -50 -60 +25 °C +85 °C +105 °C -20 -30 -40 -50 -60 -70 -70 -80 -80 0 2 4 6 0 8 2 Frequency (GHz) -40 °C +25 °C 4 6 8 Frequency (GHz) Figure 15 • Isolation vs. Frequency Over Temperature (RF1–RF2, RF1 On) +85 °C Figure 18 • Isolation vs. Frequency Over VDD (RFC–RF2, RF1 On) +105 °C 2.3V 0 0 -10 -10 Isolation (dB) Isolation (dB) 3.3V -20 -30 -40 -50 -60 3.3V 5.5V -20 -30 -40 -50 -60 -70 -70 -80 -80 0 2 4 6 0 8 Frequency (GHz) 2 4 6 8 Frequency (GHz) DOC-76247-3 – (03/2017) Page 17 www.psemi.com PE42582 SP8T RF Switch Figure 19 • IIP2 vs. RF Port Measured 800 MHz IIP2 4 GHz IIP2 5 MHz IIP3 2 GHz IIP3 8 GHz IIP3 140 130 120 110 100 90 80 70 60 IIP3 (dBm) IIP2 (dBm) 5 MHz IIP2 2 GHz IIP2 8 GHz IIP2 Figure 20 • IIP3 vs. RF Port Measured RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8 80 75 70 65 60 55 50 45 40 RF1 RF Port Measured 800 MHz IIP3 4 GHz IIP3 RF2 RF3 RF4 RF5 RF6 RF7 RF8 RF Port Measured Page 18 DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Evaluation Kit The high-throw count RF switch evaluation kit (EVK) includes hardware required to control and evaluate the functionality of the high-throw count switches. The high-throw count RF switch evaluation software can be downloaded at www.psemi.com and requires a PC running Windows® operating system to control the USB interface board. Refer to the Multi-throw Count RF Switch Evaluation Kit (EVK) User’s Manual for more information. Figure 21 • Evaluation Board Layout for PE42582 DOC-76247-3 – (03/2017) Page 19 www.psemi.com PE42582 SP8T RF Switch Pin Information Table 8 • Pin Descriptions for PE42582 This section provides pinout information for the PE42582. Figure 22 shows the pin map of this device for the available package. Table 8 provides a description for each pin. Pin No. Pin Name 1 LS 2 RF2(1) 3, 5, 14, 16, 18, 21, 23 GND 4 RF3(1) RF port 3 6 RF4(1) RF port 4 RF8 19 NC 20 GND 21 RFC 22 23 24 RF1 Pin 1 Dot Marking GND Figure 22 • Pin Configuration (Top View) LS 1 18 GND RF2 2 17 RF7 GND 3 16 GND RF3 4 15 RF6 GND 5 14 GND RF4 6 13 7 8 9 10 11 12 VSS_EXT VDD V1 V2 V3 V4 Exposed Ground Pad 7 RF5 Description Logic Select—used to determine the definition for V1, V2, V3 and V4 pins RF port 2 Ground VSS_EXT(2) External VSS negative voltage control 8 VDD Supply voltage (nominal 3.3V) 9 V1 Digital control logic input 1 10 V2 Digital control logic input 2 11 V3 Digital control logic input 3 12 V4 Digital control logic input 4 13 RF5(1) RF port 5 15 RF6(1) RF port 6 17 RF7(1) RF port 7 19 RF8(1) RF port 8 20 NC(3) No connect 22 RFC(1) RF common port 24 RF1(1) RF port 1 Pad GND Exposed pad: ground for proper operation Notes: 1) RF pins 2, 4, 6, 13, 15, 17, 19, 22, and 24 must be at 0 VDC. The RF pins do not require DC blocking capacitors for proper operation if the 0 VDC requirement is met. 2) Use VSS_EXT (pin 7) to bypass and disable internal negative voltage generator. Connect VSS_EXT (pin 7) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. 3) Pin 20 (NC) can be connected to GND or left not connected externally. Page 20 DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Packaging Information This section provides packaging data including the moisture sensitivity level, package drawing, package marking and tape-and-reel information. Moisture Sensitivity Level The moisture sensitivity level rating for the PE42582 in the 24-lead 4 × 4 × 0.85 mm QFN package is MSL1. Package Drawing Figure 23 • Package Mechanical Drawing for 24-lead 4 × 4 × 0.85 mm QFN 0.10 C A 4.00 2.70±0.05 (2X) 0.40±0.05 (x24) B 0.50 13 0.60 (x24) 0.30 (x24) 0.50 (x20) 18 (x20) 12 19 4.00 2.70±0.05 2.75 0.25±0.05 (x24) 0.10 C 24 7 6 1 2.50 Ref. (2X) Pin #1 Corner BOTTOM VIEW TOP VIEW 0.10 C 0.10 0.05 0.85±0.05 0.05 C 4.40 Chamfer 0.30 x 45° 2.75 4.40 RECOMMENDED LAND PATTERN C A B C ALL FEATURES SEATING PLANE 0.203 Ref. 0.05 C SIDE VIEW Top-Marking Specification Figure 24 • Package Marking Specifications for PE42582 42582 YYWW ZZZZZZ = YY = WW = ZZZZZZ = Pin 1 indicator Last two digits of assembly year Assembly work week Assembly lot code (Maximum six characters) DOC-76247-3 – (03/2017) Page 21 www.psemi.com PE42582 SP8T RF Switch Tape and Reel Specification Figure 25 • Tape and Reel Specifications for 24-lead 4 × 4 × 0.85 mm QFN Direction of Feed Section A-A P1 P0 see note 1 T P2 see note 3 D1 D0 A E F see note 3 B0 A0 K0 A0 B0 K0 D0 D1 E F P0 P1 P2 T W0 4.35 4.35 1.10 1.50 + 0.10/ -0.00 1.50 min 1.75 ± 0.10 5.50 ± 0.05 4.00 8.00 2.00 ± 0.05 0.30 ± 0.05 12.00 ± 0.30 A W0 Pin 1 Notes: 1. 10 Sprocket hole pitch cumulative tolerance ±0.2 2. Camber in compliance with EIA 481 3. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole Dimensions are in millimeters unless otherwise specified Page 22 Device Orientation in Tape DOC-76247-3 – (03/2017) www.psemi.com PE42582 SP8T RF Switch Ordering Information Table 9 lists the available ordering codes for the PE42582 as well as available shipping methods. Table 9 • Order Codes for PE42582 Order Codes Description Packaging Shipping Method PE42582A-X PE42582 SP8T RF switch Green 24-lead 4 × 4 mm QFN 500 units/T&R EK42582-02 PE42582 Evaluation kit Evaluation kit 1/Box Document Categories Advance Information The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and features may change in any manner without notice. Preliminary Specification The datasheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The datasheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a CNF (Customer Notification Form). Sales Contact For additional information, contact Sales at sales@psemi.com. Disclaimers The information in this document is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party. Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. Patent Statement Peregrine products are protected under one or more of the following U.S. patents: patents.psemi.com Copyright and Trademark ©2017, Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo, UTSi and UltraCMOS are registered trademarks and HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp. Product Specification www.psemi.com DOC-76247-3 – (03/2017)
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