PE42641

Product Specification PE42641 Product Description The PE42641 is a HaRP™-enhanced SP4T RF Switch developed on the UltraCMOS™ process technology. This switch contains 4 identical WEDGE/CDMA compliant TX paths and can be used in various GSM and WCDMA mobile applications as well as other wireless applications up to 3000MHz. It is also suitable for antenna band switching and switchable matching networks for cellular and non-cellular mobile applications. It integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface and requires no DC blocking capacitors. This RoHS-compliant part is available in a standard 3x3x0.75mm QFN package. Peregrine’s HaRP™ technology enhancements deliver high linearity and exceptional harmonics performance. It is an innovative feature of the UltraCMOS™ process, providing performance superior to GaAs with the economy and integration of conventional CMOS. SP4T UltraCMOS™ RF Switch DC – 3.0 GHz Features • Symmetric, High-Power SP4T: All ports WEDGE/CDMA-Compliant • Very Low Insertion Loss: 0.45 dB @ 1000 MHz, 0.6 dB @ 2000 MHz • HaRPTM - enhanced Technology for Unparalleled Linearity • • • Low harmonics of 2fo = -86 dBc and 3fo = -81 dBc at +35 dBm IMD3 of -110 dBm at WCDMA Band I IIP3 of +68 dBm • Very high isolation: 35 dB @ 900 MHz, 29 dB @ 1900 MHz • Exceptionally high ESD tolerance: • • Class 3 (4.0 kV HBM) on ANT pin Class 2 (2.0 kV HBM) on all pins Accepts 1.8 V and 2.75 V levels • Integrated decoder for 2-pin control • • Low 4.5 ohm series ON resistance • No blocking capacitors required Figure 1. Functional Diagram Figure 2. Package Type 16-lead 3x3 mm QFN RF1 RF3 RF2 RF4 CMOS Control Driver and ESD V1 V2 Document No. 70-0216-05 │ www.psemi.com ©2007-8 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 9 PE42641 Product Specification Table 1. Electrical Specifications Temp = 25°C, VDD = 2.75 V (ZS = ZL = 50 Ω) Parameter Operational Frequency ANT - RF (850 / 900 MHz) Insertion Loss (Symmetric Ports) 1 Condition Min 100 31 25 23.5 Typ 0.45 0.5 0.55 25 19 18 35 29 27.5 -86 -87 -81 -80 -110 2 Max 3000 0.65 0.7 0.75 -80 -78 -73.5 -72.5 Units MHz dB dB dB dB dB dB dB dB dB dBc dBc dBc dBc dBm ANT - RF (1800 / 1900 MHz) ANT - RF (1900 / 2200 MHz) 850 / 900 MHz Return Loss (Active Ports) 1800 / 1900 MHz 1900 / 2100 MHz RF - ANT (850 / 900 MHz) Isolation RF - ANT (1800 / 1900 MHz) RF - ANT (1900 / 2200 MHz) 2nd Harmonic 35 dBm output power, 850 / 900 MHz 33 dBm output power, 1800 / 1900 MHz 35 dBm output power, 850 / 900 MHz 33 dBm output power, 1800 / 1900 MHz RF Measured at 2.14 GHz at Ant port, input +20 dBm CW signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz (10-90%) (90-10%) RF 3rd Harmonic IMD3 distortion at 2.14 GHz Switching time 5 µs Note: 1. The typical ON Resistance value at DC is 4.5 Ω. Table 2. Electrical Specifications, Worst Case Conditions: Temp = 85°C, VDD = 2.65 V (ZS = ZL = 50 Ω) Parameter Insertion loss (2.65V, 85C) Condition ANT - RF (850 / 900 MHz) ANT - RF (1800 / 1900 MHz) ANT - RF (1900 / 2200 MHz) 850 / 900 MHz Min 30.5 24.5 23 Typ 0.5 0.55 0.6 25 19 18 34.5 28.5 27 -84 -85 -79 -78 -108 2 Max 0.7 0.75 0.8 -78 -76 -71.5 -70.5 Units dB dB dB dB dB dB dB dB dB dBc dBc dBc dBc dBm Return Loss (Active Ports) (2.65V, 85C) 1800 / 1900 MHz 1900 / 2100 MHz RF - ANT (850 / 900 MHz) Isolation (2.65V, 85C) RF - ANT (1800 / 1900 MHz) RF - ANT (1900 / 2200 MHz) 2nd Harmonic (2.65V, 85C) 35 dBm output power, 850 / 900 MHz 33 dBm output power, 1800 / 1900 MHz 35 dBm output power, 850 / 900 MHz 33 dBm output power, 1800 / 1900 MHz 3rd Harmonic (2.65V, 85C) IMD3 distortion at 2.14 GHz (2.65V, 85C) Switching time RF Measured at 2.14 GHz at Ant port, input +20 dBm CW signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz (10-90%) (90-10%) RF 5 µs ©2007-8 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 9 Document No. 70-0216-05 │ U ltraCMOS™ RFIC Solutions PE42641 Product Specification Figure 3. Pin Configuration (Top View) GND RF2 RF1 N/C Table 5. Absolute Maximum Ratings Symbol VDD VI Pin 1 Parameter/Conditions Power supply voltage Voltage on any DC input Storage temperature range RF input power (50 Ω) 3,4 824-915 MHz Min -0.3 -0.3 -65 Max 4.0 VDD+ 0.3 +150 +38 Units V V °C 16 14 15 13 GND VDD V2 V1 1 2 3 4 12 11 10 9 GND ANT GND GND TST GND PIN(50 Ω) dBm RF input power (50 Ω) 3,4 1710-1910 MHz RF input power (VSWR = (∞:1)3,4 824-915 MHz RF input power (VSWR = (∞:1)3,4 1710-1910 MHz ESD Voltage, ANT pin +36 +35 dBm +33 4000 2000 V V 5 6 7 8 GND GND RF4 Table 3. Pin Descriptions Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin Name GND VDD V2 V1 GND RF4 GND RF3 GND GND ANT GND RF1 GND RF2 N/C Ground Supply Switch control input, CMOS logic level Switch control input, CMOS logic level Ground RF Port 4 Ground RF Port 3 Ground Ground RF Common – Antenna Ground RF Port 1 Ground RF Port 2 No Connect Description RF3 PIN (∞:1) VESD 5 ESD Voltage, all pins Note: 3. Assumes RF input period of 4620 µs and duty cycle of 50%. 4. V DD within operating range specified in Table 3. 5. ESD Voltage (HBM, MIL-STD-883 Method 3015.7) Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. Table 6. Truth Table Path ANT – RF1 ANT – RF2 ANT – RF3 ANT – RF4 V2 0 1 0 1 V1 0 0 1 1 Table 4. Operating Ranges Parameter Temperature range VDD Supply Voltage IDD Power Supply Current (VDD = 2.75 V) RF input power2 ( VSWR ≤ 3:1) 824-915 MHz RF input power ( VSWR ≤ 3:1) 1710-1910 MHz 2 Symbol Min Typ Max Units TOP VDD IDD -40 2.65 2.75 13 +85 2.85 50 °C V µA Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS™ device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS™ devices are immune to latch-up. +35 PIN +33 VIH VIL 1.4 0.4 V V dBm Control Voltage High Control Voltage Low Note: 2. Assumes RF input period of 4620 µs and duty cycle of 50%. Document No. 70-0216-05 │ www.psemi.com ©2007-8 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 9 PE42641 Product Specification Evaluation Kit The SP4T switch EK Board was designed to ease customer evaluation of Peregrine’s PE42641. The RF common port is connected through a 50 Ω transmission line via the top SMA connector, J1. RF1, RF2, RF3 and RF4 are connected through 50 Ω transmission lines via SMA connectors J3, J5, J2 and J4, respectively. A through 50 Ω transmission is available via SMA connectors J6 and J7. This transmission line can be used to estimate the loss of the PCB over the environmental conditions being evaluated. The board is constructed of a two metal layer FR4 material with a total thickness of 0.031”. The bottom layer provides ground for the RF transmission lines. The transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 0.044”, trace gaps of 0.020”, dielectric thickness of 0.028”, metal thickness of 0.0021” and εr of 4.3. J1 SMASM 2 Figure 4. Evaluation Board Layouts Peregrine Specification 101/0287 Figure 5. Evaluation Board Schematic Peregrine Specification 102/0339 GND ANT GND 2 14 J5 SMASM 1 15 RF2 16 GND RF2 GND U1 QFN50P3X3-16P GND RF4 GND 7 6 5 RF4 1 J4 SMASM GND VDD V2 V1 2 1 2 3 J8 HEADER14 14 12 10 8 6 4 2 14 12 10 8 6 4 2 13 11 9 7 5 3 1 13 11 9 7 VDD 5 3 V2 1 V1 C4 DNI R2 R1 1M 1M 4 C3 DNI C2 DNI C1 DNI J6 SMASM 1 2 2 13 GND J3 SMASM 1 ANT 1 J2 SMASM RF3 RF3 8 1 12 11 10 RF1 RF1 9 Through Line J7 SMASM 1 2 Unlabeled Test Line ©2007-8 Peregrine Semiconductor Corp. All rights reserved. Page 4 of 9 Document No. 70-0216-05 │ U ltraCMOS™ RFIC Solutions 2 PE42641 Product Specification Figure 6. Insertion Loss: ANT-RF @ 25 °C Figure 7. Insertion Loss: ANT-RF @ 2.75 V Figure 8. Isolation: ANT-RF @ 25 °C Figure 9. Isolation: ANT-RF @ 2.75 V Document No. 70-0216-05 │ www.psemi.com ©2007-8 Peregrine Semiconductor Corp. All rights reserved. Page 5 of 9 PE42641 Product Specification Figure 10. Return Loss at active port @ 25 °C Figure 11. Return Loss at active port @ 2.75 V ©2007-8 Peregrine Semiconductor Corp. All rights reserved. Page 6 of 9 Document No. 70-0216-05 │ U ltraCMOS™ RFIC Solutions PE42641 Product Specification Figure 12. Package Drawing QFN 3x3 mm MAX 0.800 0.750 0.700 A NOM MIN Document No. 70-0216-05 │ www.psemi.com ©2007-8 Peregrine Semiconductor Corp. All rights reserved. Page 7 of 9 PE42641 Product Specification Figure 13. Tape and Reel Specifications 16-lead 3x3 mm QFN Table 7. Ordering Information Order Code Part Marking EK-42641-01 PE42641MLI PE42641MLI-Z PE42641-EK 42641 42641 Description PE42641-16QFN 3x3mm-EK PE42641G-16QFN 3x3mm-75A PE42641G-16QFN 3x3mm-3000C Package Evaluation Kit Green 16-lead 3x3mm QFN Green 16-lead 3x3mm QFN Shipping Method 1 / Box 75 units / Tube 3000 units / T&R ©2007-8 Peregrine Semiconductor Corp. All rights reserved. Page 8 of 9 Document No. 70-0216-05 │ U ltraCMOS™ RFIC Solutions PE42641 Product Specification Sales Offices The Americas Peregrine Semiconductor Corporation 9380 Carroll Park Drive San Diego, CA 92121 Tel: 858-731-9400 Fax: 858-731-9499 Peregrine Semiconductor, Asia Pacific (APAC) Shanghai, 200040, P.R. China Tel: +86-21-5836-8276 Fax: +86-21-5836-7652 Peregrine Semiconductor, Korea #B-2607, Kolon Tripolis, 210 Geumgok-dong, Bundang-gu, Seongnam-si Gyeonggi-do, 463-943 South Korea Tel: +82-31-728-3939 Fax: +82-31-728-3940 Europe Peregrine Semiconductor Europe Bâtiment Maine 13-15 rue des Quatre Vents F-92380 Garches, France Tel: +33-1-4741-9173 Fax : +33-1-4741-9173 Peregrine Semiconductor K.K., Japan Teikoku Hotel Tower 10B-6 1-1-1 Uchisaiwai-cho, Chiyoda-ku Tokyo 100-0011 Japan Tel: +81-3-3502-5211 Fax: +81-3-3502-5213 Space and Defense Products Americas: Tel: 858-731-9453 Europe, Asia Pacific: 180 Rue Jean de Guiramand 13852 Aix-En-Provence Cedex 3, France Tel: +33-4-4239-3361 Fax: +33-4-4239-7227 For a list of representatives in your area, please refer to our Web site at: www.psemi.com Data Sheet Identification Advance Information The product is in a formative or design stage. The data sheet contains design target specifications for product development. Specifications and features may change in any manner without notice. The information in this data sheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user’s own risk. No patent rights or licenses to any circuits described in this data sheet are implied or granted to any third party. Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. The Peregrine name, logo, and UTSi are registered trademarks and UltraCMOS, HaRP and MultiSwitch are trademarks of Peregrine Semiconductor Corp. Preliminary Specification The data sheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The data sheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a DCN (Document Change Notice). Document No. 70-0216-05 │ www.psemi.com ©2007-8 Peregrine Semiconductor Corp. All rights reserved. Page 9 of 9