PE43713
Product Specification
UltraCMOS® RF Digital Step Attenuator, 9 kHz–6 GHz
Features
Figure 1 • PE43713 Functional Diagram
• Flexible attenuation steps of 0.25 dB, 0.5 dB and
1 dB up to 31.75 dB
Switched Attenuator Array
RF
Input
• Glitch-less attenuation state transitions
RF
Output
• Monotonicity: 0.25 dB up to 4 GHz, 0.5 dB up to
5 GHz and 1 dB up to 6 GHz
• Extended +105 °C operating temperature
• Parallel and Serial programming interfaces with
Serial Addressability
• Packaging—32-lead 5 × 5 mm QFN
Applications
• Test and measurement (T&M)
Parallel
Control
×7
Serial In
Control Logic Interface
• General purpose RF attenuator
CLK
LE
(optional)
A0
A1
A2
P/S
VSS_EXT
Product Description
The PE43713 is a 50Ω, HaRP™ technology-enhanced, 7-bit RF digital step attenuator (DSA) that supports a
broad frequency range from 9 kHz to 6 GHz. It features glitch-less attenuation state transitions, supports 1.8V
control voltage and includes an extended operating temperature range to +105 °C and optional VSS_EXT bypass
mode to improve spurious performance, making this device ideal for test and measurement (T&M).
The PE43713 is a pin-compatible upgraded version of the PE43703. An integrated digital control interface
supports both Serial Addressable and Parallel programming of the attenuation, including the capability to
program an initial attenuation state at power-up.
The PE43713 covers a 31.75 dB attenuation range in 0.25 dB, 0.5 dB and 1dB steps. It is capable of maintaining
0.25 dB monotonicity through 4 GHz, 0.50 dB monotonicity through 5 GHz and 1 dB monotonicity through 6
GHz. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports.
The PE43713 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
©2017, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
DOC-84877-2 – (1/2018)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Optional External VSS Control
For proper operation, the VSS_EXT control pin must be grounded or tied to the VSS voltage specified in Table 2.
When the VSS_EXT control pin is grounded, FETs in the switch are biased with an internal negative voltage
generator. For applications that require the lowest possible spur performance, VSS_EXT can be applied externally
to bypass the internal negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE43713
Parameter/Condition
Min
Max
Unit
Supply voltage, VDD
–0.3
5.5
V
Digital input voltage
–0.3
3.6
V
Figure 5
+31
dBm
dBm
+150
°C
ESD voltage HBM, all pins(1)
3000
V
ESD voltage CDM, all pins(2)
1000
V
RF input power, 50Ω
9 kHz–48 MHz
>48 MHz–6 GHz
Storage temperature range
–65
Notes:
1) Human body model (MIL–STD 883 Method 3015).
2) Charged device model (JEDEC JESD22–C101).
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PE43713
UltraCMOS® RF Digital Step Attenuator
Recommended Operating Conditions
Table 2 lists the recommending operating condition for the PE43713. Devices should not be operated outside
the recommended operating conditions listed below.
Table 2 • Recommended Operating Condition for PE43713
Parameter
Min
Typ
Max
Unit
5.5
V
150
200
µA
3.4
5.5
V
50
80
µA
–2.4
V
Normal mode, VSS_EXT = 0V(1)
Supply voltage, VDD
2.3
Supply current, IDD
Bypass mode, VSS_EXT = –3.4V(2)
Supply voltage, VDD (VDD ≥ 3.4V see Table 3 for full spec compliance)
2.7
Supply current, IDD
Negative supply voltage, VSS_EXT
–3.6
Negative supply current, ISS
–40
–16
µA
Normal or bypass mode
Digital input high
1.17
3.6
V
Digital input low
–0.3
0.6
V
17.5
µA
RF input power, CW(3)
9 kHz–48 MHz
>48 MHz–6 GHz
Figure 5
+23
dBm
dBm
RF input power, pulsed(4)
9 kHz–48 MHz
>48 MHz–6 GHz
Figure 5
+28
dBm
dBm
+105
°C
Digital input current
Operating temperature range
–40
+25
Notes:
1) Normal mode: connect VSS_EXT (pin 20) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
2) Bypass mode: use VSS_EXT (pin 20) to bypass and disable internal negative voltage generator.
3) 100% duty cycle, all bands, 50Ω.
4) Pulsed, 5% duty cycle of 4620 µs period, 50Ω.
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PE43713
UltraCMOS® RF Digital Step Attenuator
Electrical Specifications
Table 3 provides the PE43713 key electrical specifications at 25 °C, RF1 = RF IN, RF2 = RFOUT (ZS = ZL = 50Ω),
unless otherwise specified. Normal mode(1) is at VDD = 3.3V and VSS_EXT = 0V. Bypass mode(2) is at VDD = 3.4V
and VSS_EXT = –3.4V.
Table 3 • PE43713 Electrical Specifications
Parameter
Condition
Frequency
Operating frequency
Attenuation range
Min
Typ
9 kHz
0.25 dB step
0.5 dB step
1 dB step
Unit
6 GHz
As
shown
0–31.75
0–31.50
0–31.00
9 kHz–1.0 GHz
1.0–2.2 GHz
2.2–4.0 GHz
4.0–6.0 GHz
Insertion loss
Max
1.3
1.6
1.95
2.45
dB
dB
dB
1.5
1.85
2.4
2.8
dB
dB
dB
dB
0.25 dB step
0–8 dB
9 kHz–2.2 GHz
±(0.20 + 1.5% of
attenuation setting)
dB
8.25–31.75 dB
9 kHz–2.2 GHz
±(0.20 + 2.0% of
attenuation setting)
dB
0–31.75 dB
>2.2–3.0 GHz
±(0.15 + 3.0% of
attenuation setting)
dB
0–31.75 dB
>3.0–4.0 GHz
±(0.25 + 3.5% of
attenuation setting)
dB
0–8 dB
9 kHz–2.2 GHz
±(0.20 + 1.5% of
attenuation setting)
dB
8.5–31.5 dB
9 kHz–2.2 GHz
±(0.20 + 2.0% of
attenuation setting)
dB
0–31.5 dB
>2.2–3.0 GHz
±(0.15 + 3.0% of
attenuation setting)
dB
0–31.5 dB
>3.0–5.0 GHz
±(0.25 + 5.0% of
attenuation setting)
dB
Attenuation error
0.5 dB step
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PE43713
UltraCMOS® RF Digital Step Attenuator
Table 3 • PE43713 Electrical Specifications (Cont.)
Parameter
Condition
Frequency
Min
Typ
Max
Unit
1 dB step
0–8 dB
9 kHz–2.2 GHz
±(0.20 + 1.5% of
attenuation setting)
dB
9–31 dB
9 kHz–2.2 GHz
±(0.20 + 2.0% of
attenuation setting)
dB
0–31 dB
>2.2–3.0 GHz
±(0.15 + 3.0% of
attenuation setting)
dB
0–31 dB
>3.0–5.0 GHz
±(0.25 + 5.0% of
attenuation setting)
dB
0–31 dB
>5.0–6.0 GHz
±(0.25 + 5.0% of
attenuation setting)
dB
Input port
9 kHz–6 GHz
18
dB
Output port
9 kHz–4 GHz
4–6 GHz
13
15
dB
dB
All states
9 kHz–4 GHz
4–6 GHz
27
42
deg
deg
48 MHz–6 GHz
31
dBm
4 GHz
6 GHz
57
56
dBm
dBm
Attenuation error
Return loss
Relative phase
Input 0.1dB compression
point(3)
Input IP3
Two tones at +18 dBm, 20 MHz
spacing
RF Trise/Tfall
10%/90% RF
200
ns
Settling time
RF settled to within 0.05 dB of final
value
1.6
µs
Switching time
50% CTRL to 90% or 10% RF
275
ns
0.3
dB
Attenuation transient
(envelope)
2 GHz
Notes:
1) Normal mode: connect VSS_EXT (pin 20) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
2) Bypass mode: use VSS_EXT (pin 20) to bypass and disable internal negative voltage generator.
3) The input 0.1 dB compression point is a linearity figure of merit. Refer to Table 2 for the operating RF input power (50Ω).
DOC-84877-2 – (1/2018)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Switching Frequency
Table 4 • Parallel Truth Table (Cont.)
The PE43713 has a maximum 25 kHz switching rate
in normal mode (pin 20 tied to ground). A faster
switching rate is available in bypass mode (pin 20 tied
to VSS_EXT). The rate at which the PE43713 can be
switched is then limited to the switching time as
specified in Table 3.
Switching frequency is defined to be the speed at
which the DSA can be toggled across attenuation
states. Switching time is the time duration between
the point the control signal reaches 50% of the final
value and the point the output signal reaches within
10% or 90% of its target value.
Parallel Control Setting
D6
D5
D4
D3
D2
D1
D0
Attenuation
Setting
RF1–RF2
L
H
L
L
L
L
L
8 dB
H
L
L
L
L
L
L
16 dB
H
H
H
H
H
H
H
31.75 dB
Table 5 • Serial Address Word Truth Table
Address Word
A7
A6 A5 A4 A3 A2 A1 A0
(MSB)
Spur-free Performance
The typical spurious performance of the PE43713 in
normal mode is –130 dBm (pin 20 tied to ground). If
spur-free performance is desired, the internal
negative voltage generator can be disabled by
applying a negative voltage to VSS_EXT (pin 20).
Glitch-less Attenuation State Transitions
The PE43713 features a novel architecture to provide
the best-in-class glitch-less transition behavior when
changing attenuation states. When RF input power is
applied, the output power spikes are greatly reduced
(≤0.3 dB) during attenuation state changes when
comparing to previous generations of DSAs.
X
X
X
X
X
L
L
L
000
X
X
X
X
X
L
L
H
001
X
X
X
X
X
L
H
L
010
X
X
X
X
X
L
H
H
011
X
X
X
X
X
H
L
L
100
X
X
X
X
X
H
L
H
101
X
X
X
X
X
H
H
L
110
X
X
X
X
X
H
H
H
111
Table 6 • Serial Attenuation Word Truth Table
Attenuation Word
Truth Tables
Table 4–Table 6 provide the truth tables for the
D7 D6 D5 D4 D3 D2 D1
PE43713.
Table 4 • Parallel Truth Table
Parallel Control Setting
Address
Setting
D0
(LSB)
Attenuation
Setting
RF1–RF2
L
L
L
L
L
L
L
L
Reference IL
L
L
L
L
L
L
L
H
0.25 dB
L
L
L
L
L
L
H
L
0.5 dB
L
L
L
L
L
H
L
L
1 dB
D6
D5
D4
D3
D2
D1
D0
Attenuation
Setting
RF1–RF2
L
L
L
L
L
L
L
Reference IL
L
L
L
L
H
L
L
L
2 dB
L
L
L
L
L
L
H
0.25 dB
L
L
L
H
L
L
L
L
4 dB
L
L
L
L
L
H
L
0.5 dB
L
L
H
L
L
L
L
L
8 dB
L
L
L
L
H
L
L
1 dB
L
H
L
L
L
L
L
L
16 dB
L
L
L
H
L
L
L
2 dB
L
H
H
H
H
H
H
H
31.75 dB
L
L
H
L
L
L
L
4 dB
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PE43713
UltraCMOS® RF Digital Step Attenuator
Serial Addressable Register Map
Figure 2 provides the Serial Addressable register map for the PE43713.
Figure 2 • Serial Addressable Register Map
Bits can either be set to logic high or logic low
D7 must be set to logic low
MSB (last in)
LSB (first in)
Q15
Q14
Q13
Q12
Q11
Q10
Q9
Q8
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
A7
A6
A5
A4
A3
A2
A1
A0
D7
D6
D5
D4
D3
D2
D1
D0
Address Word
Attenuation Word
The attenuation word is derived directly from the value of the attenuation state. To find
the attenuation word, multiply the value of the state by four, then convert to binary.
For example, to program the 18.25 dB state at address 3:
4 × 18.25 = 73
73 → 01001001
Address Word: XXXXX011
Attenuation Word: 01001001
Serial Input: XXXXX01101001001
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PE43713
UltraCMOS® RF Digital Step Attenuator
Programming Options
LE. The SI and CLK inputs allow data to be serially
entered into the shift register. Serial data is clocked in
LSB first.
Parallel/Serial Selection
Either a Parallel or Serial addressable interface can
be used to control the PE43713. The P/S bit provides
this selection, with P/S = LOW selecting the Parallel
interface and P/S = HIGH selecting the Serial
interface.
Parallel Mode Interface
The Parallel interface consists of seven CMOScompatible control lines that select the desired attenuation state, as shown in Table 4.
The Parallel interface timing requirements are defined
by Figure 4 (Parallel Interface Timing Diagram),
Table 9 (Parallel and Direct Interface AC Characteristics) and switching time (Table 3).
For Latched Parallel programming, the Latch Enable
(LE) should be held LOW while changing attenuation
state control values then pulse LE HIGH to LOW (per
Figure 4) to latch new attenuation state into the
device.
For Direct Parallel programming, the LE line should
be pulled HIGH. Changing attenuation state control
values will change device state to new attenuation.
Direct mode is ideal for manual control of the device
(using hardwire, switches, or jumpers).
In parallel mode, Serial-In (SI) and Clock (CLK) pins
are "don't care" and may be tied to logic LOW or logic
HIGH.
Serial-Addressable Interface
The Serial-Addressable interface is a 16-bit Serial-In,
Parallel-Out shift register buffered by a transparent
latch. The 16-bits make up two words comprised of 8bits each. The first word is the Attenuation Word,
which controls the state of the DSA. The second word
is the Address Word, which is compared to the static
(or programmed) logical states of the A0, A1 and A2
digital inputs. If there is an address match, the DSA
changes state; otherwise its current state will remain
unchanged. Figure 3 illustrates an example timing
diagram for programming a state. It is required that all
Parallel control inputs be grounded when the DSA is
used in Serial-Addressable mode.
The shift register must be loaded while LE is held
LOW to prevent the attenuator value from changing
as data is entered. The LE input should then be
toggled HIGH and brought LOW again, latching the
new data into the DSA. The Address Word truth table
is listed in Table 5. The Attenuation Word truth table
is listed in Table 6. A programming example of the
serial register is illustrated in Figure 2. The serial
timing diagram is illustrated in Figure 3.
Power-up Control Settings
The PE43713 will always initialize to the maximum
attenuation setting (31.75 dB) on power-up for both
the Serial Addressable and Latched Parallel modes of
operation and will remain in this setting until the user
latches in the next programming word. In Direct
Parallel mode, the DSA can be preset to any state
within the 31.75 dB range by pre-setting the Parallel
control pins prior to power-up. In this mode, there is a
400 µs delay between the time the DSA is poweredup to the time the desired state is set. During this
power-up delay, the device attenuates to the
maximum attenuation setting (31.75 dB) before
defaulting to the user defined state. If the control pins
are left floating in this mode during power-up, the
device will default to the minimum attenuation setting
(insertion loss state).
Dynamic operation between Serial and Parallel
programming modes is possible.
If the DSA powers up in Serial mode (P/S = HIGH), all
the Parallel control inputs DI[6:0] must be set to logic
LOW. Prior to toggling to Parallel mode, the DSA must
be programmed serially to ensure D[7] is set to logic
LOW.
If the DSA powers up in either Latched or Direct
Parallel mode, all Parallel pins DI[6:0] must be set to
logic LOW prior to toggling to Serial Addressable
mode (P/S = HIGH), and held LOW until the DSA has
been programmed serially to ensure bit D[7] is set to
logic LOW.
The sequencing is only required once on power-up.
Once completed, the DSA may be toggled between
Serial and Parallel programming modes at will.
The Serial-Addressable interface is controlled using
three CMOS-compatible signals: SI, Clock (CLK) and
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 3 • Serial Addressable Timing Diagram
DI[6:0]
Parallel control inputs
Bits can either be set to logic high or logic low
Serial bit D[7] must be set to logic low
DI[6:0]
TDISU
A[2:0]
TDIH
Valid
TASU
TAH
TPSSU
TPSIH
P/S
SI
D[0]
D[1]
D[2]
D[3]
D[4]
D[5]
D[6]
D[7]
A[0]
A[1]
A[2]
A[3]
A[4]
A[5]
A[6]
A[7]
TSISU
TSIH
CLK
TCLKL
TCLKH
TLESU
LE
TLEPW
Figure 4 • Latched-Parallel/Direct-Parallel Timing Diagram
DI[6:0]
P/S
Parallel control inputs
TPSSU
DI[6:0]
TPSIH
Valid
TDISU
LE
TDIH
TLEPW
Table 7 • Latch and Clock Specifications
Latch
Enable
Shift Clock
Function
0
↑
Shift register clocked
↑
X
Contents of shift register
transferred to attenuator
core
DOC-84877-2 – (1/2018)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Table 8 • Serial Interface AC Characteristics(*)
Parameter/Condition
Min
Serial clock frequency, FCLK
Max
Unit
10
MHz
Serial clock HIGH time, TCLKH
30
ns
Serial clock LOW time, TCLKL
30
ns
Last Serial clock rising edge setup time to Latch Enable rising edge, TLESU
10
ns
Latch Enable minimum pulse width, TLEPW
30
ns
Serial data setup time, TSISU
10
ns
Serial data hold time, TSIH
10
ns
Parallel data setup time, TDISU
100
ns
Parallel data hold time, TDIH
100
ns
Address setup time, TASU
100
ns
Address hold time, TAH
100
ns
Parallel/Serial setup time, TPSSU
100
ns
Parallel/Serial hold time, TPSIH
100
ns
Note: * VDD = 3.3V or 5.0V, –40 °C, < TA < +105 °C, unless otherwise specified.
Table 9 • Parallel and Direct Interface AC Characteristics(*)
Parameter/Condition
Min
Max
Unit
Latch Enable minimum pulse width, TLEPW
30
ns
Parallel data setup time, TDISU
100
ns
Parallel data hold time, TDIH
100
ns
Parallel/Serial setup time, TPSSU
100
ns
Parallel/Serial hold time, TPSIH
100
ns
Note: * VDD = 3.3V or 5.0V, –40 °C < TA < +105 °C, unless otherwise specified.
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PE43713
UltraCMOS® RF Digital Step Attenuator
Maximum RF Input Power (dBm)
Figure 5 • Power De-rating Curve, 9 kHz–6 GHz, –40 to +105 °C Ambient, 50Ω
35
33
31
29
27
25
23
21
19
17
15
13
11
9
7
5
0.01
0.05
P0.1 dB Compression (≥ 48 MHz)
Pulsed (≥ 48 MHz)
CW & Pulsed (< 48 MHz)
CW (≥ 48 MHz)
0.50
5.00
50.00
500.00
5000.00
Frequency (MHz)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Typical Performance Data
Figure 6–Figure 32 show the typical performance data at 25 °C and VDD = 3.3V, RF1 = RFIN, RF2 = RFOUT (ZS =
ZL = 50Ω) unless otherwise specified.
Figure 6 • Insertion Loss vs Temperature
-40°C
25°C
85°C
105°C
0
Insertion Loss (dB)
-1
-2
-3
-4
-5
-6
0
1
2
3
4
5
6
Frequency (GHz)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 7 • Input Return Loss vs Attenuation Setting
0 dB
0.25 dB
0.5 dB
1 dB
2 dB
4 dB
8 dB
16 dB
28 dB
31.75 dB
2
3
0
-5
Return Loss (dB)
-10
-15
-20
-25
-30
-35
-40
-45
0
1
4
5
6
Frequency (dB)
Figure 8 • Output Return Loss vs Attenuation Setting
0 dB
0.25 dB
0.5 dB
1 dB
2 dB
4 dB
8 dB
16 dB
28 dB
31.75 dB
2
3
0
-5
Return Loss (dB)
-10
-15
-20
-25
-30
-35
-40
-45
-50
0
1
4
5
6
Frequency (dB)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 9 • Input Return Loss for 16 dB Attenuation Setting vs Temperature
-40°C
25°C
85°C
105°C
0
-5
Return Loss (dB)
-10
-15
-20
-25
-30
-35
-40
0
1
2
3
4
5
6
5
6
Frequency (GHz)
Figure 10 • Output Return Loss for 16 dB Attenuation Setting vs Temperature
-40°C
25°C
85°C
105°C
0
Return Loss (dB)
-5
-10
-15
-20
-25
0
1
2
3
4
Frequency (GHz)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 11 • Relative Phase Error vs Attenuation Setting
0 dB
0.25 dB
0.5 dB
1 dB
2 dB
4 dB
8 dB
16 dB
31.75 dB
2
3
Relative Phase Error (dB)
60
50
40
30
20
10
0
-10
0
1
4
5
6
Frequency (GHz)
Figure 12 • Relative Phase Error for 31.75 dB Attenuation Setting vs Frequency
0.9 GHz
1.8 GHz
2.2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
Relative Phase Error (deg)
60
50
40
30
20
10
0
-40C
25C
85C
105C
Temperature (deg C)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 13 • Attenuation Error @ 900 MHz vs Temperature
-40°C
25°C
85°C
105°C
Attenuation Error (dB)
0.75
0.5
0.25
0
-0.25
0
4
8
12
16
20
24
28
32
24
28
32
Attenuation Setting (dB)
Figure 14 • Attenuation Error @ 1800 MHz vs Temperature
-40°C
25°C
85°C
105°C
Attenuation Error (dB)
0.75
0.5
0.25
0
-0.25
0
4
8
12
16
20
Attenuation Setting (dB)
Page 16
DOC-84877-2 – (1/2018)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 15 • Attenuation Error @ 2200 MHz vs Temperature
-40°C
25°C
85°C
105°C
Attenuation Error (dB)
0.75
0.5
0.25
0
-0.25
0
4
8
12
16
20
24
28
32
24
28
32
Attenuation Setting (dB)
Figure 16 • Attenuation Error @ 3000 MHz vs Temperature
-40°C
25°C
85°C
105°C
Attenuation Error (dB)
0.75
0.5
0.25
0
-0.25
0
4
8
12
16
20
Attenuation Setting (dB)
DOC-84877-2 – (1/2018)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 17 • Attenuation Error @ 4000 MHz vs Temperature
-40°C
25°C
85°C
105°C
Attenuation Error (dB)
1
0.75
0.5
0.25
0
0
4
8
12
16
20
24
28
32
Attenuation Setting (dB)
Figure 18 • IIP3 vs Attenuation Setting
0 dB
3.5 dB
7.5 dB
11 dB
14 dB
17.5 dB
21.5 dB
24.75 dB
28 dB
31.75 dB
70
Input IP3 (dB)
65
60
55
50
3
4
5
6
Frequency (GHz)
Page 18
DOC-84877-2 – (1/2018)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 19 • 0.25 dB Step Attenuation vs Frequency(*)
1 GHz
2.2 GHz
3 GHz
4 GHz
0.2
Step Attenuation (dB)
0.15
0.1
0.05
0
-0.05
-0.1
-0.15
-0.2
0
4
8
12
16
20
24
28
32
28
32
Attenuation Setting (dB)
Note: * Monotonicity is held so long as step attenuation does not cross below –0.25 dB.
Figure 20 • 0.25 dB Step, Actual vs Frequency
1 GHz
2.2 GHz
3 GHz
4 GHz
35
Actual Attenuation (dB)
30
25
20
15
10
5
0
0
4
8
12
16
20
24
Ideal Attenuation (dB)
DOC-84877-2 – (1/2018)
Page 19
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 21 • 0.25 dB Major State Bit Error vs Attenuation Setting
0.25 dB
0.5 dB
1 dB
2 dB
4 dB
8 dB
16 dB
31.75 dB
1
Attenuation Error (dB)
0.8
0.6
0.4
0.2
0
-0.2
-0.4
0
1
2
3
4
Frequency (GHz)
Figure 22 • 0.25 dB Attenuation Error vs Frequency
1 GHz
2.2 GHz
3 GHz
4 GHz
1
Attenuation Error (dB)
0.8
0.6
0.4
0.2
0
-0.2
-0.4
0
4
8
12
16
20
24
28
32
Attenuation Setting (dB)
Page 20
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 23 • 0.5 dB Step Attenuation vs Frequency(*)
1 GHz
2.2 GHz
3 GHz
4 GHz
5 GHz
0.2
Step Attenuation (dB)
0.15
0.1
0.05
0
-0.05
-0.1
-0.15
-0.2
0
4
8
12
16
20
24
28
32
28
32
Attenuation Setting (dB)
Note: * Monotonicity is held so long as step attenuation does not cross below –0.5 dB.
Figure 24 • 0.5 dB Step, Actual vs Frequency
1 GHz
2.2 GHz
3 GHz
4 GHz
5 GHz
35
Actual Attenuation (dB)
30
25
20
15
10
5
0
0
4
8
12
16
20
24
Ideal Attenuation (dB)
DOC-84877-2 – (1/2018)
Page 21
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 25 • 0.5 dB Major State Bit Error vs Attenuation Setting
0.5 dB
1 dB
2 dB
4 dB
8 dB
16 dB
31.5 dB
1.2
Attenuation Error (dB)
1
0.8
0.6
0.4
0.2
0
-0.2
0
1
2
3
4
5
Frequency (GHz)
Figure 26 • 0.5 dB Attenuation Error vs Frequency
1 GHz
2.2 GHz
3 GHz
4 GHz
5 GHz
1.2
Attenuation Error (dB)
1
0.8
0.6
0.4
0.2
0
-0.2
0
4
8
12
16
20
24
28
32
Attenuation Setting (dB)
Page 22
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 27 • 1 dB Step Attenuation vs Frequency(*)
1 GHz
2.2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
0.25
Step Attenuation (dB)
0.2
0.15
0.1
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.25
0
4
8
12
16
20
24
28
32
Attenuation Setting (dB)
Note: * Monotonicity is held so long as step attenuation does not cross below –1 dB.
Figure 28 • 1 dB Step, Actual vs Frequency
1 GHz
2.2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
35
Actual Attenuation (dB)
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
Ideal Attenuation (dB)
DOC-84877-2 – (1/2018)
Page 23
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 29 • 1 dB Major State Bit Error vs Attenuation Setting
1 dB
2 dB
4 dB
8 dB
16 dB
31 dB
1.2
Attenuation Error (dB)
1
0.8
0.6
0.4
0.2
0
-0.2
0
1
2
3
4
5
6
Frequency (GHz)
Figure 30 • 1 dB Attenuation Error vs Frequency
1 GHz
2.2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
1.2
Attenuation Error (dB)
1
0.8
0.6
0.4
0.2
0
-0.2
0
4
8
12
16
20
24
28
32
Attenuation Setting (dB)
Page 24
DOC-84877-2 – (1/2018)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 31 • Attenuation Transient (15.75–16 dB), Typical Switching Time = 275 ns
Power (dBm)
-15.4
Envelope Power (dBm)
-15.6
Trigger starts ~730 ns
-15.8
-16.0
-16.2
Glitch = 0.15 dB
-16.4
-16.6
-16.8
-17.0
0
400
800
1200
1600
2000
2400
2800
3200
2800
3200
Time (ns)
Figure 32 • Attenuation Transient (16–15.75 dB), Typical Switching Time = 275 ns
Power (dBm)
-15.4
Envelope Power (dBm)
-15.6
Trigger starts ~730 ns
-15.8
-16.0
Glitch = 0.03 dB
-16.2
-16.4
-16.6
-16.8
-17.0
0
400
800
1200
1600
2000
2400
Time (ns)
DOC-84877-2 – (1/2018)
Page 25
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PE43713
UltraCMOS® RF Digital Step Attenuator
Evaluation Kit
The digital step attenuator evaluation board (EVB)
was designed to ease customer evaluation of the
PE43713 digital step attenuator. The PE43713 EVB
supports Direct Parallel, Latched Parallel and Serial
modes.
Evaluation Kit Setup
Connect the EVB with the USB dongle board and USB
cable as shown in Figure 33.
Direct Parallel Programming Procedure
Direct Parallel programming is suitable for manual
operation without software programming. For manual
Direct Parallel programming, position the Parallel/
Serial (P/S) select switch to the Parallel position. The
LE switch must be switched to HIGH position.
Switches D0–D6 are SP3T switches that enable the
user to manually program the parallel bits. When D0–
D6 are toggled to the HIGH position, logic high is
presented to the parallel input. When toggled to the
LOW position, logic low is presented to the parallel
input. Setting LE and D0–D6 to the EXT position
presents as OPEN, which is set for software
programming of Latched Parallel and Serial modes.
Table 4 depicts the Parallel truth table.
Latched Parallel Programming Procedure
For automated Latched Parallel programming,
connect the USB dongle board and cable that is
provided with the evaluation kit (EVK) from the USB
port of the PC to the J5 header of the PE43713 EVB,
and set the LE and D0–D6 SP3T switches to the EXT
position. Position the Parallel/Serial (P/S) select
switch to the Parallel position. The evaluation
software is written to operate the DSA in Parallel
mode. Ensure that the software GUI is set to Latched
Parallel mode. Use the software GUI to enable the
desired attenuation state. The software GUI automatically programs the DSA each time an attenuation
state is enabled.
Serial Addressable Programming Procedure
For automated Serial programming, connect the USB
dongle board and cable that is provided with the EVK
from the USB port of the PC to the J5 header of the
PE43713 EVB, and set the LE and D0–D6 SP3T
switches to the EXT position. Position the Parallel/
Serial (P/S) select switch to the Serial position. Prior
to programming, the user must define an address
setting using the HDR2 header pin. Jump the middle
column of pins on the HDR2 header (A0–A2) to the
left column of pins to set logic LOW, or jump the
middle row of pins to the right column of pins to set
logic HIGH. If the HDR2 pins are left open, then 000
becomes the default address. The software GUI is
written to operate the DSA in Serial mode. Use the
software GUI to enable each setting to the desired
attenuation state. The software GUI automatically
programs the DSA each time an attenuation state is
enabled.
Figure 33 • Evaluation Kit for PE43713
Page 26
DOC-84877-2 – (1/2018)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Figure 34 • Evaluation Kit Layout for PE43713
DOC-84877-2 – (1/2018)
Page 27
www.psemi.com
PE43713
UltraCMOS® RF Digital Step Attenuator
Pin Information
Table 10 • Pin Descriptions for PE43713
This section provides pinout information for the
PE43713. Figure 35 shows the pin map of this device
for the available package. Table 10 provides a
description for each pin.
Pin No.
Pin Name
1, 5, 6,
8–17, 19
GND
Ground
2
VDD
Supply voltage
3
P/S
Serial/Parallel mode select
4
A0
Address bit A0 connection
7
RF1(1)
RF1 port (RF input)
18
RF2(1)
RF2 port (RF output)
20
VSS_EXT(2)
C0.25
C0.5
C1
C2
C4
C8
C16
SI
31
30
29
28
27
26
25
Pin 1 Dot
Marking
32
Figure 35 • Pin Configuration (Top View)
Description
GND
1
24
CLK
VDD
2
23
LE
P/S
3
22
A1
A0
4
21
A2
21
A2
Address bit A2 connection
GND
5
20
VSS_EXT
22
A1
Address bit A1 connection
GND
6
19
GND
23
LE
Serial interface Latch Enable input
RF1
7
18
RF2
24
CLK
Serial interface Clock input
GND
8
17
GND
25
SI
Serial interface Data input
26
C16 (D6)(3)
Parallel control bit, 16 dB
27
C8 (D5)(3)
Parallel control bit, 8 dB
28
C4 (D4)(3)
Parallel control bit, 4 dB
29
C2 (D3)(3)
Parallel control bit, 2 dB
30
C1 (D2)(3)
Parallel control bit, 1 dB
31
C0.5 (D1)(3)
32
C0.25 (D0)(3) Parallel control bit, 0.25 dB
16
GND
GND
15
14
GND
GND
13
12
GND
11
GND
10
GND
GND
9
Exposed
Ground Pad
External VSS negative voltage control
Pad
GND
Parallel control bit, 0.5 dB
Exposed pad: ground for proper
operation
Notes:
1) RF pins 7 and 18 must be at 0 VDC. The RF pins do not require
DC blocking capacitors for proper operation if the 0 VDC
requirement is met.
2) Use VSS_EXT (pin 20) to bypass and disable internal negative
voltage generator. Connect VSS_EXT (pin 20) to GND (VSS_EXT =
0V) to enable internal negative voltage generator.
3) Ground C0.25, C0.5, C1, C2, C4, C8 and C16 if not in use.
Page 28
DOC-84877-2 – (1/2018)
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PE43713
UltraCMOS® RF Digital Step Attenuator
Packaging Information
This section provides packaging data including the moisture sensitivity level, package drawing, package
marking and tape-and-reel information.
Moisture Sensitivity Level
The moisture sensitivity level rating for the PE43713 in the 32-lead 5 × 5 mm QFN package is MSL1.
Package Drawing
Figure 36 • Package Mechanical Drawing for 32-lead 5 × 5 × 0.85 mm QFN
0.10 C
A
5.00
(2X)
3.10±0.05
0.40±0.05
(x32)
B
17
0.60
(x32)
24
0.30
(x32)
0.50
(x28)
0.50
(x28)
16
25
5.00
3.10±0.05
0.25±0.05
(x32)
0.10 C
3.15
5.40
32
9
8
1
(2X)
3.50
REF
PIN #1 CORNER
TOP VIEW
CHAMFER
0.35 x 45°
3.15
5.40
BOTTOM VIEW
RECOMMENDED LAND PATTERN
0.10 C
0.10
0.05
0.85±0.05
0.05 C
SEATING PLANE
C A B
C
ALL FEATURES
0.203
REF
0.05
REF
C
SIDE VIEW
Top-Marking Specification
Figure 37 • Package Marking Specifications for PE43713
43713
YYWW
ZZZZZZZ
=
YY =
WW =
ZZZZZZZ =
Pin 1 indicator
Last two digits of assembly year
Assembly work week
Assembly lot code (maximum seven characters)
DOC-84877-2 – (1/2018)
Page 29
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PE43713
UltraCMOS® RF Digital Step Attenuator
Tape and Reel Specification
PE43713
Figure 38 • Tape and Reel Specifications for 32-lead 5 × 5 × 0.85 mm QFN
Direction of Feed
Section A-A
P1
P0
see
note 1
T
P2
see note 3
D1
D0
A
E
F
see note 3
B0
A0
K0
A0
B0
K0
D0
D1
E
F
P0
P1
P2
T
W0
5.25
5.25
1.10
1.50 + 0.1/ -0.0
1.5 min
1.75 ± 0.10
5.50 ± 0.05
4.00
8.00
2.00 ± 0.05
0.30 ± 0.05
12.00 ± 0.30
A
W0
Pin 1
Notes:
1. 10 Sprocket hole pitch cumulative tolerance ±0.2
2. Camber in compliance with EIA 481
3. Pocket position relative to sprocket hole measured
as true position of pocket, not pocket hole
Dimensions are in millimeters unless otherwise specified
Page 30
Device Orientation in Tape
DOC-84877-2 – (1/2018)
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PE43713
Ordering Information
Table 11 lists the available ordering codes for the PE43713 as well as available shipping methods.
Table 11 • Order Codes for PE43713
Order Codes
Description
Packaging
Shipping Method
PE43713A-Z
PE43713 Digital step attenuator
Green 32-lead 5 × 5 mm QFN
3000 units / T&R
PE43713B-Z
PE43713 Digital step attenuator
Green 32-lead 5 × 5 mm QFN
3000 units / T&R
EK43713-02
PE43713 Evaluation kit
Evaluation kit
1 / Box
EK43713-03
PE43713 Evaluation kit
Evaluation kit
1 / Box
Document Categories
Advance Information
The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and
features may change in any manner without notice.
Preliminary Specification
The datasheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any
time without notice in order to supply the best possible product.
Product Specification
The datasheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended
changes by issuing a CNF (Customer Notification Form).
Sales Contact
For additional information, contact Sales at sales@psemi.com.
Disclaimers
The information in this document is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be
entirely at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to
support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death
might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in
such applications.
Patent Statement
Peregrine products are protected under one or more of the following U.S. patents: patents.psemi.com
Copyright and Trademark
©2017, Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo, UTSi and UltraCMOS are registered trademarks and
HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp.
Product Specification
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DOC-84877-2 – (1/2018)
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