C30645E

DATASHEET Optoelectronics C30645E/C30662E Series InGaAs Avalanche Photodiode Description The C30645E/C30662E are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide high Q.E., high responsivity and low noise in the spectral range between 1100nm and 1700nm.They are optimized for use at a wavelength of 1540nm, suitable for use in eye-safe laser range finding systems. These APDs are supplied in a hermetically sealed TO-18 package or on a ceramic carrier. Custom packaging is also available. Please contact PerkinElmer Optelectronics Canada to discuss the packaging in further detail. Applications OTDR Eye safe range finding Features Spectral response (1100 to 1700nm) High responsivity Quality & Reliability PerkinElmer Optoelectronics Canada is committed to supplying the highest quality product to our customer. We are certified to meet ISO-9001 and we are designed to meet MIL-STD-883 and/or MIL-STD-750 specifications. All devices undergo extended burn-in and periodic process qualification programs to assure high reliability. Low dark current and noise Large area www.optoelectronics.perkinelmer.com InGaAs Avalanche Photodiode C30645E/C30662E Series Table 1. Electrical Characteristics at TA = 22°C C30645E Parameter Diameter Operating Voltage (Vop) Temperature Coefficient of Vr for Constant Gain Responsivity (@1550nm) Dark Current (@M=10) Spectral Noise Current (@M=10) Capacitance Bandwidth Quantum Efficiency (1300-1550nm) Maximum Useable Gain (M) 1000 75% 10 20 1.25 200 75% 10 20 9.3 50 1.0 2.5 40 0.14 Min. Typ. 80 70 0.20 9.3 150 1.5 40 0.14 Max. Min. C30662E Typ. 200 70 0.20 Max. Units um V V / deg C A/W nA pA/rt Hz pF MHz 1. A specific voltage, Vop, is supplied with each device. When the photodiode is operated at this voltage (at 22°C), the device will meet the electrical characteristic limits shown above. The voltage value will be within the range of 40 to 70 volts. 2. The voltage dependence of the gain, for gains above 4, is given approximately by the following empirical formula: M =50/ (Vb-Vop). Rough approximate of the sensitivity. 3. Gain and quantum efficiency are not directly measurable quantities. The numbers quoted are estimated typical values. Gain, quantum efficiency and responsivity are related by the following: R =ŋλM /1.24 where λ is the wavelength in units of mm, ŋ is the quantum efficiency, M is gain. 4. The detector noise current / Hz1/2 is given by the following expression: in = (2q (ls+lbM 2 F)) 1/2 Where: F = keffM + (1 - keff) (2-1/M) and ls and lb are the unmultiplied and multiplied portions of the dark current, respectively. The total dark current is given by: It = ls+lbM. However, since both ls and lb are somewhat voltage dependent, and M is not directly measurable (see Note 3), it is not usually possible to determine both ls and lb unambiguously. Since system performance depends on noise current and responsivity, these measurable quantities are the ones that have been specified. 5. Most devices can be operated at gains up to about 30 or more, but with values of noise current correspondingly higher, as indicated by the discussion in Note 4 above. www.optoelectronics.perkinelmer.com Page 2 InGaAs Avalanche Photodiode C30645E/C30662E Series Table 2. Absolute Maximum Rating, Limiting Values Standard TO-18 Package Forward Current Total Power dissipation Operating Temperature Storage Temperature Soldering Temperature (10 seconds) 5 20 -60 to +125 -20 to +70 250 Ceramic Package 5 20 -60 to +125 -20 to +70 250 Units mA mW °C °C °C Figure 1. Mechanical Characteristics TO – 18 Package Ceramic Package www.optoelectronics.perkinelmer.com Page 3 InGaAs Avalanche Photodiode C30645E/C30662E Series Figure 2. Spectral Responsivity Curve Responsivity vs Wavelength (Estimate for APD, M=10) 12 11 10 9 Page 3 Responsivity (A/W) 8 7 6 5 4 3 2 1 0 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 -20 0 Temp. 25 70 Wavelength (um) Figure 3. Typical Gain vs Bias Typical Gain vs Bias 100 Gain 10 1 35 37 39 41 43 45 47 49 51 Vop(V) www.optoelectronics.perkinelmer.com Page 4 InGaAs Avalanche Photodiode C30645E/C30662E Series Figure 4. Typical Gain vs (V breakdown - V bias) Typical Gain vs (V_Breakdown - V_Bias) 100 Gain 10 1 0 2 4 6 8 10 12 14 Vbr-Vop (V) Ordering Information For more information e-mail us at opto@perkinelmer.com or visit our website at www.optoelectronics.perkinelmer.com. All values are nominal; specifications subject to change without notice. PerkinElmer Canada Inc. 16800 Trans-Canada Highway Kirkland, Quebec H9H 5G7 Canada Phone: (514) 693-2200 Fax : (514) 693-2210 PerkinElmer GmbH & Co. KG Wenzel-Jaksch-Str.31 65199 Wiesbaden Phone: +49 611 492 247 Fax: +49 611 492 170 PerkinElmer Singapore Pte Ltd. 47 Ayer Rajah Crescent #06-12 Singapore 139947 Phone: +65 6775 2022 Fax: +65 6775 1008 Optoelectronics Headquarters 44370 Christy Street Fremont, CA 945383180 Phone: (510) 979-5600 (800) 775-6786 Fax: (510) 687-1140 © 2004 PerkinElmer, Inc. All rights reserved. www.optoelectronics.perkinelmer.com Page 5