C30737E-500

Optoelectronics DATASHEET PRELIMINARY DATA SHEET C30737 Epitaxial Silicon Avalanche Photodiode Description The C30737 type avalanche photodiode provides high responsivity between 500 nm and 1000 nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area diameters of the photosensitive surface are 0.23 mm and 0.5mm. Other photosensitive diameters are also available on a custom basis. The detector chip is hermetically sealed behind a flat glass window mounted in a TO-18 package. TO-18 plastic sealed packages and plastic surface mount packages are additional options. PerkinElmer Optoelectronics is committed to supplying the highest quality products to our customers. Certified to meet ISO 9001, the Epitaxial series is designed to satisfy MIL-STD-883 and/or MIL-STD-750. Applications A pplications • Range Finding • Optical communication systems Features • Low cost • 0.23 mm and 0.5mm active diameter • High gain at low bias voltage • Low breakdown voltage • Fast response • Low noise o ptoelectronics.perkinelmer.com Page 1 C30737 Series Hermetic TO-18 Package Outline Plastic TO-18 Package Outline o ptoelectronics.perkinelmer.com Page 2 C30737 Series Electrical Characteristics Hermetic Package C30737E-230 C30737E-500 Min Diameter Breakdown Voltage Gain @ 800nm Responsivity @ 800nm Temperature Coefficient (constant gain) Dark Current Noise Current: f=10kHz, ∆F=1.0KhZ Typ 0.23 160 100 50 0.6 10 0.2 1.5