C30810

N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 E VERYTHING IN A NEW LIGHT. Description This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm. The different types making up this series provide a broad choice in photosensitive areas and in time response characteristics. Each of the types is antireflection coated to enhance responsivity at 900 nm. These characteristics make the devices highly useful in HeNe and GaAs laser detection systems and in optical demodulation, data transmission, ranging, and high-speed switching applications. Features • Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2 • Low Operating Voltage VR = 45V • Anti-Reflection Coated to Enhance Responsivity at 900 nm • Hermetically-Sealed Packages • Spectral Response Range 400 to 1100 nm Maximum Ratings, Absolute-Maximum Values (All Types) DC Reverse Operating Voltage VR . . . . . . . . . . . . . . . .100 max. V Photocurrent Density, jp at 22°C: Average value, continuous operation . . . . . . . . . .5 mA/mm2 Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA/mm2 Forward Current, IF: Average value, continuous operation . . . . . . . . . .10 max. mA Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 max. mA Ambient Temperature: Storage, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . .-60 to +100°C Operating, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40 to +80°C Soldering (for 5 seconds) . . . . . . . . . . . . . . . . . . . . . . . .200°C C30807, C30808, C30809, C30810, C30822, C30831 Mechanical Characteristics Photosensitive Surface: Shape All types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Circular Area Type C30831 Type C30807 Type C30808 Type C30822 Type C30809 Type C30810 Optical Characteristics Field of View: 1 See Figure 5 Approx. Full Angle For Complete Illuminatation Photosensitive Surface 70 62 72 104 74 74 Partial Illuminatation Photosensitive Surface 84 90 120 144 148 140 deg deg deg deg deg deg . . . . . . . . . . . . . . . . . . . . . . . . .0.2 mm2 . . . . . . . . . . . . . . . . . . . . . . . . .0.8 mm2 . . . . . . . . . . . . . . . . . . . . . . . . . .5 mm2 . . . . . . . . . . . . . . . . . . . . . . . . .20 mm2 . . . . . . . . . . . . . . . . . . . . . . . . .50 mm2 . . . . . . . . . . . . . . . . . . . . . . . .100 mm2 Type C30831 Type C30807 Type C30808 Type C30822 Type C30809 Type C30810 Note 1. The values specified for field of view are approximate and are critically dependent on the dimensional tolerances of the package components parts. Electrical Characteristics at TA= 22°C At a DC Reverse Operating Voltage (VR) = 45 Volts2, unless otherwise specified Type C30807 Typ Max 0.6 0.15 85 15 2x10-9 1x10-8 6x10-14 1x10-8 5x10-8 4.2x10-13 Type C30808 Typ Max 0.6 0.15 83 17 5x10-9 3x10-8 1x10-13 2.5x10-8 1.5x10-7 7x10-13 Type C30839 Typ Max 0.6 0.15 83 17 2.5x10-8 7x10-8 1.3x10-7 3.5x10-7 Units Min Breakdown Voltage, VBR Responsivity: At 900 nm At 1060 nm Quantum Efficiency: At 900 nm At 1060 nm Dark Current, id: See Figure 2 At VR = 10 V At VR = 45V Noise Current, In: See Figure 3 f = 1000 Hz, ∆f = 1.0 Hz Noise Equivalent Power (NEP): f = 1000 Hz, ∆f = 1.0 Hz At 900 nm At 1060 nm Capacitance, Cd: See Figure 4 Rise Time, tr: RL = 50 Ω, λ = 900 nm, 10% to 90% points Fall Time: RL = 50 Ω, λ = 900 nm, 10% to 90% points 100 0.5 0.1 70 12 - Min 100 0.5 0.1 70 12 - Min 100 0.5 0.1 70 12 - V A/W A/W % % A A A/Hz1/2 1.5x10-13 1.1x10-12 - 1x10-13 4x10-13 2.5 8x10-13 3.2x10-12 3 - 1.5x10-13 1.2x10-12 6.5x10-13 5.2x10-12 6 10 - 2x10-13 1x10-12 35 1.6x10-12 8x10-12 45 W/Hz1/2 W/Hz1/2 pF - 3 5 - 5 8 - 10 15 ns - 6 10 - 8 13 - 15 20 ns Note 2. The recommended range of reverse operating voltage VR at TA = 22°C is 0 to 50 volts. However, when the devices are operated in the photovoltaic mode, i.e., at VR = 0 volts, some of the electrical characteristics will differ from those shown. C30807, C30808, C30809, C30810, C30822, C30831 Figure 1. Typical Spectral Responsivity Characteristic Figure 2. Typical Dark Current vs. Ambient Temperature Electrical Characteristics at TA= 22°C At a DC Reverse Operating Voltage (VR) = 45 Volts2, 2 Specifications (at specified unless otherwise VR = 45 Volts (typical), 22°C) Min Breakdown Voltage, VBR 100 Responsivity: At 900 nm 0.5 At 1060 nm 0.1 Quantum Efficiency: At 900 nm 70 At 1060 nm 12 Dark Current, id: See Figure 2 At VR = 10V At VR = 45V Noise Current, In: See Figure 3 f = 1000 Hz, ∆f = 1.0 Hz Noise Equivalent Power (NEP): f = 1000 Hz, ∆f = 1.0 Hz At 900 nm At 1060 nm Capacitance, Cd: See Figure 4 Rise Time, tr: RL = 50 Ω, λ = 900 nm, 10% to 90% points Fall Time: RL = 50 Ω, λ = 900 nm, 10% to 90% points Type C30810 Typ Max 0.6 0.15 83 17 8x10-8 3x10-7 3x10-13 4x10-7 1.5x10-6 2.1x10-12 Min 100 0.5 0.1 Type C30822 Typ Max 0.6 0.15 83 17 1x10-8 5x10-8 5x10-8 2.5x10-7 Min 100 0.5 0.1 Type C30831 Typ Max 0.6 0.15 83 17 1x10-9 1x10-8 6x10-14 5x10-9 5x10-8 4.2x10-13 Units V A/W A/W % % A A A/Hz1/2 1.3x10-13 9x10-13 4.5x10-13 3.6x10-12 2x10-12 1.6x10-11 70 90 - 2x10-13 1.5x10-12 8x10-13 7x10-12 17 20 1 - 1x10-13 8x10-13 4x10-13 3.2x10-12 2 2.5 W/Hz1/2 W/Hz1/2 pF 12 17 - 7 12 - 3 5 ns 20 30 - 10 15 - 6 10 ns Note 2. The recommended range of reverse operating voltage VR at TA = 22°C is 0 to 50 volts. However, when the devices are operated in the photovoltaic mode, i.e., at VR = 0 volts, some of the electrical characteristics will differ from those shown. C30807, C30808, C30809, C30810, C30822, C30831 Figure 3. Typical Noise Current vs. Frequency Figure 4. Typical Photodiode Capacitance vs. Operating Voltage Figure 5. Definition of Half-Angle Approx. Field-of-View. (Scale is exaggerated for clarity) Figure 6. Dimensional Outline for C30807 and C30831 Figure 7. Dimensional Outline for C30809 Figure 8. Dimensional Outline for C30808 Dimensions in millimeters. Dimensions in parentheses are in inches. C30807, C30808, C30809, C30810, C30822, C30831 Figure 9. Dimensional Outline for C30810 Figure 10. Dimensional Outline for C30822 For more information e-mail us at opto@perkinelmer.com or visit our web site at www.perkinelmer.com/opto PerkinElmer Optoelectronics 22001 Dumberry Road, Vaudreuil, Québec Canada J7V 8P7 Phone: (450) 424-3300 Fax: (450) 424-3411 All values are nominal; specifications subject to change without notice. ©2000 PerkinElmer, Inc. All rights reserved. 0700 is a registered trademark of PerkinElmer, Inc.