VTB100H

VTB Process Photodiodes VTB100H PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue response. CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 100°C -40°C to 100°C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) SYMBOL ISC TC ISC VOC TC VOC ID RSH TC R SH CJ SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 1 0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 ±70 2.6 x 10-14 (Typ.) 1.05 x 10 13 (Typ.) .1 1100 50 VTB100H Typ. 65 .12 490 -2.0 50 1.4 -8.0 2.0 500 .23 Max. UNITS µA %/°C mV mV/°C pA GΩ %/°C nF A/W nm nm V Degrees W ⁄ Hz cm Hz ⁄ W PerkinElmer Optoelectronics 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto 23