VTB1112

VTB Process Photodiodes VTB1112, 1113 PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB1112 SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 ±15 3.0 x 10-14 (Typ.) 4.2 x 10 12 (Typ.) VTB1113 UNITS Max. .23 Min. 30 Typ. 60 .12 490 -2.0 100 20 7.0 -8.0 .31 .19 1100 320 920 2 40 ±15 5.9 x 10-15 (Typ.) 2.1 x 10 13 (Typ.) 1100 .23 Max. µA %/°C mV mV/°C pA GΩ %/°C nF A/W nm nm V Degrees W ⁄ Hz cm Hz / W Typ. 60 .12 490 -2.0 .25 -8.0 .31 .19 30 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 26