VTB8441B

VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch (mm) CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB8440B SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 ±50 1.1 x 10 -13 (Typ.) VTB8441B UNITS Max. .08 Min. 4 Typ. 5 .02 420 -2.0 2000 100 1.4 -8.0 1.0 720 330 580 2 40 ±50 2.4 x 10 -14 (Typ.) 9.7 x 10 12 (Typ.) 720 .08 Max. µA %/°C mV mV/°C pA GΩ %/°C nF nm nm V Degrees W ⁄ Hz cm Hz / W Typ. 5 .02 420 -2.0 .07 -8.0 1.0 4 2.2 x 10 12 (Typ.) PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 42