VTE1281-2

GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package — 880 nm VTE1281-1, -2 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 26 T-1¾ (5 mm) CHIP SIZE: .015" x .015" This narrow beam angle 5 mm diameter plastic packaged emitter contains a medium area, single wirebonded, GaAlAs, 880 nm, high efficiency IRED chip. It is designed to be cost effective in moderate pulse drive applications. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -40°C to 100°C 200 mW 2.86 mW/°C 100 mA 1.43 mA/°C 2.5 A -.8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 µA 880 nm 23 pF 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee mW/cm2 Min. VTE1281-1 VTE1281-2 2.5 5.0 Typ. 3.3 6.5 Condition distance mm 36 36 Diameter mm 6.4 6.4 Radiant Intensity Ie mW/sr Min. 32 65 Total Power PO mW Typ. 20 25 Test Current IFT mA (Pulsed) 100 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 1.5 Max. 2.0 2.0 ±10° ±10° Half Power Beam Angle θ1/2 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 114