VTP100

VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current and fast speed of response. CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 100°C -40°C to 100°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP100 SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 725 925 140 ±70 2.5 x 10-14 (Typ.) 1.1 x 10 13 (Typ.) .036 .047 .50 1150 .25 50 35 Typ. 55 .24 300 -2.0 30 Max. µA %/°C mV mV/°C nA GΩ pF A/(W/cm2) A/W nm nm V Degrees W ⁄ Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 47