VTP1332

SILICON PHOTODIODE VTP1332 FEATURES • • • • Low dark current Fast response Infrared transmitting/visible blocking spectral range Low junction capacitance PRODUCT DESCRIPTION This VTP processed P on N planar silicon photodiode is housed in an IR transmitting, T-1 3/4 endlooking package. These diodes exhibit low dark current under reverse bias. The VTP process offers low capacitance, resulting in fast response times. ELECTRO-OPTICAL CHARACTERISTICS @ 25° C PARAMETER SHORT CIRCUIT CURRENT @ 100 fc, 2850 K RESPONSIVITY @ 880 nm DARK CURRENT @ VR = 10 V REVERSE BREAKDOWN VOLTAGE @ 100 µA JUNCTION CAPACITANCE @ VR = 0 V, 1 MHz ANGULAR RESPONSE (50% RESPONSE POINT) SYMBOL ISC Re ID VBR CJ 30 100 ±20 MIN. 75 0.050 0.065 25 TYP. MAX. UNITS µA A/(W/cm2) nA V pF Degrees θ1/2 PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 3/4 CHIP SIZE: .075 x .075 (1.90 x 1.90) TOTAL EXPOSED AREA: .0036 in2 (2.326 mm2) 10900 PAGE AVE. ST. LOUIS, MO. 63132 USA FAX 314-423-3956 PHONE 314-423-4900 GENERAL CHARACTERISTICS PARAMETER OPEN CIRCUIT VOLTAGE @ 100 fc, 2850 K SOURCE PEAK SPECTRAL RESPONSE @ 25°C SPECTRAL APPLICATION RANGE RISE/FALL TIMES @ 800 nm, VR =10 V, RL = 50 Ω TEMPERATURE COEFFICIENT SHORT CIRCUIT CURRENT @ 2850 K SOURCE DARK CURRENT @ VR = 10 V OPEN CIRCUIT VOLTAGE TEMPERATURE RANGE, OPERATING & STORAGE SYMBOL VOC TYPICAL RATING 420 920 725 - 1100 20 +0.20 +11.0 −2.0 − 40 to +100 UNITS mV nm nm ns λpk λrange tR / tF TC ISC TC ID TC VOC TAMB % / °C % / °C mV/ °C °C TYPICAL CHARACTERISTIC CURVES RELATIVE SPECTRAL RESPONSE ANGULAR RESPONSE RELATIVE JUNCTION CAPACITANCE vs BIAS VOLTAGE (REFERRED TO ZERO BIAS) Specifications subject to change without prior notice. Information supplied by PerkinElmer Optoelectronics is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. The user should determine the suitability of this product in his own application. No patent rights are granted to any devices or circuits described herein. abcto