VTP4085S

VTP Process Photodiodes VTP4085, 4085S PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP4085 SYMBOL ISC TC ISC ISC VOC TC VOC ID RSH TC RSH CJ λrange λp SR CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Short Circuit Current Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Sensitivity @ Peak TEST CONDITIONS Min. H = 100 fc, 2850 2850 K 100 µW/cm2, 940 nm H = 100 fc, 2850 K 2850 K H = 0, VR = 100 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 V 400 925 .55 2.0 -11 .35 1100 400 925 .55 11.4 Typ. 200 .20 15 .33 -2.0 100 11.4 Max. Min. Typ. 200 .20 15 .33 -2.0 15 4.0 -11 .35 1100 50 Max. µA %/°C µA mV mV/°C nA MΩ %/°C nF nm nm A/W VTP4085S UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 55