VTP6060

VTP Process Photodiodes VTP6060 PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response. CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP6060 SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 50 TEST CONDITIONS Min. H = 100 fc, 2850 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 50 V H = 0, V = 10 mV H = 0, V = 15 V 940 nm @ Peak 400 925 140 ±45 1.9 x 10-13 (Typ.) 2.3 x 10 12 (Typ.) .14 .55 1150 100 60 120 Typ. 200 .20 350 -2.0 35 Max. µA %/°C mV mV/°C nA GΩ pF A/(W/cm2) A/W nm nm V Degrees W ⁄ Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 57