1N4148

HIGH VOLTAGE SILICON RECTIFIER 1N4148 FEATURES
Silicon Epitaxial Planar Diode
Fast switching diode
This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation MECHANICAL DATA
Case: DO-35
Weight: apprax: 0.13gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 75 100 1501) Unit V V mA VR V RM I0 IFSM Ptot Tj TS 500 5001) 175 –65 to +175 mA mW °C °C Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) Web Site: WWW.PS-PFS.COM HIGH VOLTAGE SILICON RECTIFIER Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 °C Capacitance at VF = VR = 0 V Voltage Rise when Switching ON tested with 50 mA Pulses tp = 0.1 µs, Rise Time < 30 ns, fp = 5 to 100 kHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Min. – Typ. – Max. 1 Unit V VF IR IR IR Ctot Vfr – – – – – – – – – – 25 5 50 4 2.5 nA µA µA pF V trr – – 4 ns RthJA ηv – 0.45 – – 3501) – K/W – Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) Rectification Efficiency Measurement Circuit HIGH VOLTAGE SILICON RECTIFIER RATINGS AND CHARACTERISTIC CURVES 1N4148 HIGH VOLTAGE SILICON RECTIFIER RATINGS AND CHARACTERISTIC CURVES 1N4148