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B5819WS

B5819WS

  • 厂商:

    PFS

  • 封装:

  • 描述:

    B5819WS - SCHOTTKY BARRIER DIODE - Shenzhen Ping Sheng Electronics Co., Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
B5819WS 数据手册
B5817WS-B5819WS SCHOTTKY BARRIER DIODE SOD-323 1.35(0.053) 1.15(0.045) 1.26(.050) 1.24(.048) FEATURES For use in low voltage, high frequency inverters Free wheeling, and polanty protection applications 1.80(0.071) 1.60(0.063) 2.70(0.106) 2.30(0.091) 1.80(0.071) 1.60(0.063) 2.70(0.106) 2.30(0.091) MECHANICAL DATA 0.4(0.016) .25(0.010) .177(.007) .089(.003) 1.00(.040) 0.80(.031) 0.1(0.004) MIN .305(0.012) .295(0.010) .72(0.028) .69(0.027) .08(.003) MIN Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Marking: B5817W:SJ, B5818W:SK, B5819W:SL Dimensions in millimeters and (inches) Maximum ratings and electrical characteristics, Single diode @TA=25C PARAMETER Peak repetitive peak reverse voltage Working peak DC Blocking voltage RMS Reverse voltage Average rectified output current Peak forward surge current @=8.3ms Repetitive peak forward current Power dissipation Thermal resistance junction to ambient Storage temperature Non-Repetitive peak reverse voltage Electrical ratings @TA=25C PARAMETER Reverse breakdown voltage SYMBOLS SYMBOLS B5817WS 20 14 B5818WS 30 21 1 25 625 200 625 -65 to +150 30 B5819WS 40 28 UNITS V V A A mA mW K/W VRRM VRWM VR VR(RMS) IO IFSM IFRM Pd RΘJA TSTG VRM C 40 V 20 Min. 20 30 40 Max. Unit V V V Test conditions IR=1mA VR=20V B5817WS B5818WS B5819WS B5817WS B5818WS B5819WS B5817WS IF=1A IF=3A B5818WS B5819WS VR=4V,f=1.0MHz V(BR) Reverse voltage leakage current IR 1 0.45 0.75 mA VR=30V VR=40V Forward voltage VF V V V 0.55 0.875 0.6 0.9 Diode capacitance CD 120 pF www.ps-pfs.com RATINGS AND CHARACTERISTIC CURVES B5817WS-B5819WS FIG. 1- FORWARD CURRENT DERATING CURVE FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT(A) 1.25 PEAK FORWARD SURGE CURRENT(A) 30 1.0 25 20 0.75 Resistive or inductive load0.375''(9.5mm) lead length 0.5 15 10 0.25 5 0 0 20 40 60 80 100 120 140 0 0 10 100 CASE TEMPERATURE(C) NUMBER OF CYCLES AT 60Hz INSTANTANEOUS REVERSE CURRENT (mS) INSTANTANEOUS FORWARD CURRENT(A) FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 FIG. 4- TYPICAL REVERSE CHARACTERISTICS 100 10 TJ=25 C 10 TJ=125 C TJ=125 C 1.0 TJ=75 C 0.1 1.0 0.1 Pulse width=300us 1% duty cycle 0.01 TJ=25 C 0.01 0 0.4 0.8 1.2 1.6 0.001 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE(V) PERCENT OF RATED PEAK PEVERSE VOLTAGE (%) TRANSIENT THERMAL IMPEDANCE (C/W) FIG. 5- TYPICAL JUNCTION CAPACITANCE 400 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 JUNCTION CAPACITANCE (pF) TJ=25 C f=1.0MHz Vsp=50mVp-p 10 100 1 10 0 0.1 1 10 100 0 1 10 100 REVERSE VOLTAGE (V) t--PULSE DURATION (sec.) www.ps-pfs.com
B5819WS
1. 物料型号: - B5817WS、B5818WS、B5819WS

2. 器件简介: - 这些是肖特基势垒二极管,用于低电压、高频逆变器、自由轮流通路和极性保护应用。

3. 引脚分配: - 引脚为镀锡可焊性端子,符合MIL-STD-750标准方法2026。

4. 参数特性: - 最大额定值和电气特性在环境温度25°C时如下: - B5817WS:反向峰值击穿电压20V,工作峰值电压30V,RMS反向电压14V,平均整流输出电流1A,峰值正向浪涌电流25A,重复峰值正向电流625mA,功率耗散200mW,结到环境的热阻625K/W。 - B5818WS:RMS反向电压21V,反向峰值击穿电压30V。 - B5819WS:RMS反向电压28V,反向峰值击穿电压40V。 - 存储温度范围:-65°C至+150°C。

5. 功能详解: - 这些二极管具有低正向电压降、快速恢复时间和高浪涌电流能力,适用于高频应用。

6. 应用信息: - 适用于低电压、高频逆变器、自由轮流通路和极性保护应用。

7. 封装信息: - 封装为SOD-323,塑封塑料体,极性符号标记在封装上。
B5819WS 价格&库存

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