BZX55B2V7

BZX55B... Silicon Epitaxial Planar Z–Diodes Features D D D D D D Very sharp reverse characteristic Low reverse current level Low noise Very high stability Available with tighter tolerances VZ–tolerance ± 2% Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 300 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=100mA Type Symbol VF Min Typ Max 1.5 Unit V Web Site: WWW.PS-PFS.COM BZX55B... Type BZX55B... 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 IZT for VZT and mA V 5 2.64 to 2.76 5 2.94 to 3.06 5 3.24 to 3.36 5 3.52 to 3.68 5 3.82 to 3.98 5 4.22 to 4.38 5 4.60 to 4.80 5 5.00 to 5.20 5 5.48 to 5.72 5 6.08 to 6.32 5 6.66 to 6.94 5 7.35 to 7.65 5 8.04 to 8.36 5 8.92 to 9.28 5 9.80 to 10.20 5 10.78 to 11.22 5 11.76 to 12.24 5 12.74 to 13.26 5 14.70 to 15.30 5 15.70 to 16.30 5 17.64 to 18.36 5 19.60 to 20.40 5 21.55 to 22.45 5 23.5 to 24.5 5 26.4 to 27.6 5 29.4 to 30.6 5 32.4 to 33.6 5 35.3 to 36.7 2.5 38.2 to 39.8 2.5 42.1 to 43.9 2.5 46.1 to 47.9 2.5 50.0 to 52.0 2.5 54.9 to 57.1 2.5 60.8 to 63.2 2.5 66.6 to 69.4 2.5 73.5 to 76.5 rzjT W rzjk W at < 85 < 90 < 90 < 90 < 90 < 90 < 80 < 60 < 40 < 10