D5SB20...... D5SB80
塑封硅整流桥堆
反向电压 200---800V 正向电流 6.0 A 特征 Features
.134(3.4) .122(3.1) .189(4.8) .173(4.4) .150(3.8) .134(3.4)
.440(11.2) .425(10.8)
Single-phase Silicon Bridge Rectifier
Reverse Voltage 200 to 800 V Forward Current 6.0A
·低的反向漏电流 Low reverse leakage ·较强的正向浪涌承受能力 High forward surge capability ·浪涌承受能力:170 A Surge overload rating:170 Amperes peak
.1193(30.3) .1170(29.7)
.799(20.3) .775(19.7)
¢.134(3.4) .122(3.1)
.106(2.70) .091(2.30) .095(2.40) .079(2.00 .043(1.1) .035(0.9)
+
~
~
.165(4.2) .150(3.8)
.708(18.0) .669(17.0)
.114(2.9) .098(2.5)
机械数据 Mechanical Data
·封装: 塑料封装 Case: Molded Plastic ·极性: 标记模压或印于本体 Polarity: Symbols molded or marked on body ·安装位置: 任意 ·重量: 4.6 克 Mounting Position: Any Weight:4.6 Grams
.031(0.8) .023(0.6)
.386(9.8) .303(7.7) .303(7.7) .402(10.2) .287(7.3) .287(7.3)
Unit:inch(mm)
极限值和温度特性 TA = 25℃ 除非另有规定。 Maximum Ratings & Thermal Characteristics
符号
Symbols 最大可重复峰值反向电压 Maximum repetitive peak reverse voltage 最大均方根电压 Maximum RMS voltage 最大直流阻断电压 Maximum DC blocking voltage
加散热片TC =111℃ 最大正向平均整流电流 Maximum average forward rectified current 无散热片Ta=25℃
Ratings at 25℃ ambient temperature unless otherwise specified.
D5SB20 200 140 200
D5SB40 400 280 400 6.0 2.8 170 30 5
D5SB60 600 420 600
D5SB80 800 560 800
单位
Unit
V V V A A µA ℃/W
VRRM VRMS VDC IF(AV) IF(AV) IFSM IR(AV) RθJA
Tj, TSTG
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
最大反向峰值电流
@TA = 75℃
Maximum peak reverse current full cycle
典型热阻 Typical thermal resistance 工作结温和存储温度
Operating junction and storage temperature range
-50 --- +150
℃
电特性 TA = 25℃ 除非另有规定。 Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols 最大正向电压
Maximum forward voltage D5SB20 D5SB40 1.05 10 D5SB60 D5SB80
单位
Unit
V µA
IF = 3.0A TA= 25℃
VF
最大反向电流 Maximum reverse current 典型结电容 VR = 4.0V, f = 1MHz Type junction capacitance
IR
Cj
40
pF
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D5SB20...... D5SB80
特性曲线 Characteristic Curves
正向特性曲线(典型值) TYPICAL FORWARD CHARACTERISTIC
10 4.0
正向电流降额曲线 FORWARD CURRENT DERATING CURVE
平均正向电流 IF(AV) (A) IF(A) Average Forward Rectified Current (A)
on glass-epoxi substrate
IF Instantaneous Forward Current (A)
+
~
~
-
Tl=150℃
3.0
P.C.B. soldering land 5mmф sine wave R-load free in air
正向电流 IF(A)
1
Tl=25℃
2.0
1.0
Pulse measurement per diode
0.1 0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
00
40
80
120
160
VF
正向电压 VF(V) Instantaneous Forward Voltage (V)
环境温度 Ta(°C) Tamb, ambient temperature (°C)
功率损耗曲线 FORWARD POWER DISSIPATION
浪涌特性曲线(最大值) MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT
240
IFSM
14
200
10mS
10mS
12
non-repetitive Tj=25℃ before
FORWARD POWER DISSIPATION PF(W))
IFSM Peak Forward Surge Current (A)
1 Cycle
10 8 6 4 2 0 0
峰值正向浪涌电流 IFSM(A)
120 80
功率损耗 P(W)
160
40
Sine wave Tj=150℃
1 2 3 4 5 6 7
0 0
2
5
10
20
50
100
通过电流的周期 Number of Cycles at 60 Hz.
平均整流电流 I0[A] AVERAGE RECGIFIED FORWARD CURRENT Io(A)
正向电流降额曲线 FORWARD CURRENT DERATING CURVE
10
Tc-sensing point
平均正向电流 IF(AV) (A) IF(A) Average Forward Rectified Current (A)
9
+ ~ ~ -
8 7 6 5 4 3 2 1 00
Tc
sine wave R-load with heatsink
40
80
120
160
环境温度 TC(°C) Case Temperature Tc(℃)
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