1N4148

DISCRETE SEMICONDUCTORS DATA SH EET M3D176 1N4148; 1N4446; 1N4448 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 15 Philips Semiconductors Product specification High-speed diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V • Repetitive peak forward current: max. 450 mA • Forward voltage: max. 1 V. The diodes are type branded. handbook, halfpage k 1N4148; 1N4446; 1N4448 DESCRIPTION The 1N4148, 1N4446, 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. a MAM246 APPLICATIONS • High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 500 +200 200 A A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. − − − − MAX. 75 75 200 450 V V mA mA UNIT 1996 Apr 15 2 Philips Semiconductors Product specification High-speed diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF 1N4148 1N4446 1N4448 IR IR Cd trr reverse current reverse current; 1N4448 diode capacitance reverse recovery time PARAMETER forward voltage see Fig.3 IF = 10 mA IF = 20 mA IF = 5 mA IF = 100 mA VR = 20 V; see Fig.5 CONDITIONS 1N4148; 1N4446; 1N4448 MIN. − − 0.62 − − − MAX. 1.0 1.0 0.72 1.0 25 50 3 4 4 V V V V UNIT nA µA µA pF ns VR = 20 V; Tj = 150 °C; see Fig.5 VR = 20 V; Tj = 100 °C; see Fig.5 f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 when switched from IF = 50 mA; tr = 20 ns; see Fig.8 Vfr forward recovery voltage − 2.5 V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 350 UNIT K/W K/W 1996 Apr 15 3 Philips Semiconductors Product specification High-speed diodes GRAPHICAL DATA 1N4148; 1N4446; 1N4448 handbook, halfpage 300 MBG451 handbook, halfpage 600 MBG464 IF (mA) 200 IF (mA) 400 (1) (2) (3) 100 200 0 0 100 Tamb (oC) 200 0 0 (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. 1 VF (V) 2 Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10−1 1 10 102 103 tp (µs) 104 Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Apr 15 4 Philips Semiconductors Product specification High-speed diodes 1N4148; 1N4446; 1N4448 103 handbook, halfpage IR (µA) MGD290 MGD004 handbook, halfpage 1.2 102 Cd (pF) 1.0 (1) (2) 10 0.8 1 10−1 0.6 10−2 0 100 Tj (oC) 200 0.4 0 10 VR (V) 20 (1) VR = 75 V; typical values. (2) VR = 20 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Apr 15 5 Philips Semiconductors Product specification High-speed diodes 1N4148; 1N4446; 1N4448 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R = 50 Ω i VR 90% tp t R = 50 Ω S V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω I 90% V R S = 50 Ω D.U.T. OSCILLOSCOPE R i = 50 Ω 10% MGA882 V fr t tr tp t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Apr 15 6 Philips Semiconductors Product specification High-speed diodes PACKAGE OUTLINE 1N4148; 1N4446; 1N4448 handbook, full pagewidth 0.56 max 1.85 max 25.4 min 4.25 max 25.4 min MLA428 - 1 Dimensions in mm. Fig.9 SOD27 (DO-35). DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Apr 15 7