1N5225B

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N5225B to 1N5267B Voltage regulator diodes Product specification Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. k a MAM239 APPLICATIONS • Low-power voltage stabilizers or voltage references. The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge Tamb = 50 °C; lead length max.; note 1 Lead length 8 mm; note 2 PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.3 tp = 8.3 ms; square wave; Tj ≤ 55 °C prior to surge Tstg Tj Notes 1. Device mounted on a printed circuit-board without metallization pad. 2. Tie-point temperature ≤ 75 °C. ELECTRICAL CHARACTERISTICS Table 1 Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 200 mA; see Fig.4 MAX. 1.1 UNIT V storage temperature junction temperature CONDITIONS MIN. − MAX. 250 UNIT mA see Table “Per type” − − − − −65 −65 400 500 40 10 +200 +200 mW mW W W °C °C 1996 Apr 26 2 1996 Apr 26 3 Philips Semiconductors Per type Tj = 25 °C; unless otherwise specified. WORKING DIFFERENTIAL VOLTAGE RESISTANCE VZ (V)(1) rdif (Ω) at IZtest at IZtest NOM. 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 MAX. 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 TEMP. COEFF. SZ (%/K) at IZ(2) DIODE CAP. TEST Cd (pF) CURRENT IZtest (mA) at f = 1 MHz; at VR = 0 V MAX. 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 450 450 450 450 450 450 300 300 300 200 200 150 150 150 150 90 85 85 80 80 75 75 75 70 70 60 REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. 50 25 15 10 5 5 5 5 5 5 3 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10.0 11.0 12.0 13.0 14.0 14.0 15.0 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) tp = 100 µs; Tamb = 25 °C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.5 3.0 3.0 2.5 2.5 2.5 2.0 2.0 1.5 1.5 1.5 1.5 1.5 Voltage regulator diodes TYPE No. MAX. −0.075 −0.070 −0.065 −0.060 ±0.055 ±0.030 ±0.030 +0.038 +0.038 +0.045 +0.050 +0.058 +0.062 +0.065 +0.068 +0.075 +0.076 +0.077 +0.079 +0.082 +0.082 +0.083 +0.084 +0.085 +0.086 +0.086 1N5225B to 1N5267B Product specification 1996 Apr 26 4 Philips Semiconductors TYPE No. WORKING DIFFERENTIAL VOLTAGE RESISTANCE VZ (V)(1) rdif (Ω) at IZtest at IZtest NOM. MAX. 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 1400 1600 1700 TEMP. COEFF. SZ (%/K) at IZ(2) DIODE CAP. TEST Cd (pF) CURRENT IZtest (mA) at f = 1 MHz; at VR = 0 V MAX. 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 60 55 55 50 50 50 45 45 45 40 40 40 40 40 35 35 35 REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 17.0 18.0 19.0 21.0 21.0 23.0 25.0 27.0 30.0 33.0 36.0 39.0 43.0 46.0 47.0 52.0 56.0 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) tp = 100 µs; Tamb = 25 °C MAX. 1.25 1.25 1.25 1.0 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.3 0.25 0.2 Voltage regulator diodes MAX. +0.087 +0.088 +0.089 +0.090 +0.091 +0.091 +0.092 +0.093 +0.094 +0.095 +0.095 +0.096 +0.096 +0.097 +0.097 +0.097 +0.098 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5265B 1N5266B 1N5267B Notes 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 1N5225B to 1N5267B 1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C. 2. For types 1N5225B to 1N5242B the IZ current is 7.5 mA; for 1N5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C. Product specification Philips Semiconductors Product specification Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER 1N5225B to 1N5267B CONDITIONS VALUE 300 380 UNIT K/W K/W thermal resistance from junction to tie-point lead length 10 mm thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 1996 Apr 26 5 Philips Semiconductors Product specification Voltage regulator diodes GRAPHICAL DATA 1N5225B to 1N5267B 103 handbook, full pagewidth Rth j-a (K/W) δ=1 0.75 0.50 0.33 0.20 0.10 0.05 MBG930 102 10 0.02 0.01 ≤0.001 tp T tp T δ= 1 10−1 1 10 102 103 104 tp (ms) 105 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 103 handbook, halfpage PZSM (W) 102 MBG801 MBG803 handbook, halfpage 250 IF (mA) 125 (1) 10 (2) 1 10−1 1 duration (ms) 10 0 0.5 0.75 VF (V) 1.0 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.4 Forward current as a function of forward voltage; typical values. 1996 Apr 26 6 Philips Semiconductors Product specification Voltage regulator diodes PACKAGE OUTLINE 1N5225B to 1N5267B ndbook, full pagewidth 0.56 max 1.85 max 25.4 min 4.25 max 25.4 min MLA428 - 1 Dimensions in mm. Fig.5 SOD27 (DO-35). DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Apr 26 7