1PS66SB82

1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes Rev. 04 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plastic packages. Table 1. Product overview Package NXP 1PS66SB82 1PS88SB82 SOT666 SOT363 JEITA SC-88 triple isolated diode triple isolated diode Configuration Type number 1.2 Features Low diode capacitance Low forward voltage Very small SMD plastic packages 1.3 Applications Digital applications: Ultra high-speed switching Clamping circuits RF applications: Diode ring mixer RF detector RF voltage doubler 1.4 Quick reference data Table 2. Symbol IF VR Cd Quick reference data Parameter continuous forward current continuous reverse voltage diode capacitance VR = 0 V; f = 1 MHz; see Figure 4 Conditions Min Typ 1 Max 30 15 Unit mA V pF NXP Semiconductors 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description anode (diode 1) anode (diode 2) anode (diode 3) cathode (diode 3) 1 2 3 sym046 Simplified outline 6 5 4 Symbol 6 5 4 cathode (diode 2) cathode (diode 1) 1 2 3 001aab555 3. Ordering information Table 4. Ordering information Package Name 1PS66SB82 1PS88SB82 SC-88 Description plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads Version SOT666 SOT363 Type number 4. Marking Table 5. Marking codes Marking code N5 E1* Type number 1PS66SB82 1PS88SB82 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VR IF Tj Tamb Tstg continuous reverse voltage continuous forward current junction temperature ambient temperature storage temperature Conditions Min −65 −65 Max 15 30 125 +125 +150 Unit V mA °C °C °C 1PS66SB82_1PS88SB82_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 13 January 2010 2 of 10 NXP Semiconductors 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient SOT666 SOT363 [1] Conditions in free air [1] Min Typ Max Unit [2][3] [3][4] - - 700 416 K/W K/W For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. Refer to SOT666 standard mounting conditions. Reflow soldering is the only recommended soldering method. Refer to SOT363 (SC-88) standard mounting conditions. [2] [3] [4] 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol VF Parameter forward voltage Conditions see Figure 1 IF = 1 m A IF = 30 mA IR rdif Cd [1] [1] Min - Typ 12 1 Max 340 700 0.2 - Unit mV mV μA Ω pF reverse current differential resistance diode capacitance VR = 1 V; see Figure 2 IF = 5 mA; f = 1 kHz; see Figure 3 VR = 0 V; f = 1 MHz; see Figure 4 Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 1PS66SB82_1PS88SB82_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 13 January 2010 3 of 10 NXP Semiconductors 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes 103 IF (mA) (1) (2) mld549 103 IR (μA) 102 mld550 (3) 102 10 (1) (2) 1 10 10−1 (2) (1) (3) (3) 1 10−2 0.8 1.2 VF (V) 1.6 0 0.4 0 5 10 VR (V) 15 (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig 1. Forward current as a function of forward voltage; typical values 103 mgt838 Fig 2. Reverse current as a function of reverse voltage; typical values mld551 r dif (Ω) 102 1.2 Cd (pF) 1 0.8 0.6 10 0.4 1 10−1 1 10 IF (mA) 102 0 0 2 4 6 8 VR (V) 10 f = 1 kHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C Fig 3. Differential diode forward resistance as a function of forward current; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values 1PS66SB82_1PS88SB82_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 13 January 2010 4 of 10 NXP Semiconductors 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes 8. Package outline Plastic surface-mounted package; 6 leads SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 5. Package outline SOT666 © NXP B.V. 2010. All rights reserved. 1PS66SB82_1PS88SB82_4 Product data sheet Rev. 04 — 13 January 2010 5 of 10 NXP Semiconductors 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes Plastic surface-mounted package; 6 leads SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 6. Package outline SOT363 (SC-88) © NXP B.V. 2010. All rights reserved. 1PS66SB82_1PS88SB82_4 Product data sheet Rev. 04 — 13 January 2010 6 of 10 NXP Semiconductors 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes 9. Packing information Table 9. Packing methods The -xxx numbers are the last three digits of the 12NC ordering code.[1] Type number 1PS66SB82 1PS88SB82 [1] Package SOT666 SOT363 Description 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel Packing quantity 3 000 -115 4000 -115 10 000 -135 For further information and the availability of packing methods see Section 12. 1PS66SB82_1PS88SB82_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 13 January 2010 7 of 10 NXP Semiconductors 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes 10. Revision history Table 10. Revision history Release date Data sheet status Product data sheet Change notice Supersedes 1PS66SB82_1PS88SB82_3 Document ID Modifications: 1PS66SB82_1PS88SB82_4 20100113 • • • • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table 3 “Pinning”: updated Figure 5 “Package outline SOT666”: updated Figure 6 “Package outline SOT363 (SC-88)”: updated Product data sheet Product specification Product specification 1PS88SB82_2 1PS88SB82_1 - 1PS66SB82_1PS88SB82_3 20050124 1PS88SB82_2 1PS88SB82_1 20030411 20010216 1PS66SB82_1PS88SB82_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 13 January 2010 8 of 10 NXP Semiconductors 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes 11. Legal information 11.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 1PS66SB82_1PS88SB82_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 13 January 2010 9 of 10 NXP Semiconductors 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5 Packing information . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 January 2010 Document identifier: 1PS66SB82_1PS88SB82_4