74ABT821DB

Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger (3-State) 74ABT821 FEATURES flip-flops • High speed parallel registers with positive edge-triggered D-type • Ideal where high speed, light loading, or increased fan-in are • Output capability: +64mA/–32mA • Latch-up protection exceeds 500mA per Jedec Std 17 • ESD protection exceeds 2000 V per MIL STD 883 Method 3015 • Power-up 3-State • Power-up Reset DESCRIPTION The 74ABT821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The 74ABT821 Bus interface Register is designed to eliminate the extra packages required to buffer existing registers and provide and 200 V per Machine Model required with MOS microprocessors extra data width for wider data/address paths of buses carrying parity. The 74ABT821 is a buffered 10-bit wide version of the 74ABT374/74ABT534 functions. The 74ABT821 is a 10-bit, edge triggered register coupled to ten 3-State output buffers. The two sections of the device are controlled independently by the clock (CP) and Output Enable (OE) control gates. The register is fully edge triggered. The state of each D input, one set-up time before the Low-to-High clock transition is transferred to the corresponding flip-flop’s Q output. The 3-State output buffers are designed to drive heavily loaded 3-State buses, MOS memories, or MOS microprocessors. The active Low Output Enable (OE) controls all ten 3-State buffers independent of the register operation. When OE is Low, the data in the register appears at the outputs. When OE is High, the outputs are in high impedance ”off” state, which means they will neither drive nor load the bus. QUICK REFERENCE DATA SYMBOL tPLH tPHL CIN COUT ICCZ PARAMETER Propagation delay CP to Qn Input capacitance Output capacitance Total supply current CONDITIONS Tamb = 25°C; GND = 0V CL = 50pF; VCC = 5V VI = 0V or VCC Outputs disabled; VO = 0V or VCC Outputs disabled; VCC =5.5V TYPICAL 4.6 4 7 500 UNIT ns pF pF nA ORDERING INFORMATION PACKAGES 24-Pin Plastic DIP 24-Pin plastic SO 24-Pin Plastic SSOP Type II 24-Pin Plastic TSSOP Type I TEMPERATURE RANGE –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C OUTSIDE NORTH AMERICA 74ABT821 N 74ABT821 D 74ABT821 DB 74ABT821 PW NORTH AMERICA 74ABT821 N 74ABT821 D 74ABT821 DB 74ABT821PW DH DWG NUMBER SOT222-1 SOT137-1 SOT340-1 SOT355-1 PIN CONFIGURATION OE D0 D1 D2 D3 D4 D5 D6 D7 1 2 3 4 5 6 TOP VIEW 7 8 9 18 17 16 15 14 13 Q5 Q6 Q7 Q8 Q9 CP 24 23 22 21 20 19 VCC Q0 Q1 Q2 Q3 Q4 PIN DESCRIPTION PIN NUMBER 1 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 23, 22, 21, 20, 19, 18, 17, 16, 15, 14 13 10 20 SYMBOL OE D0-D9 Q0-Q9 CP GND VCC FUNCTION Output enable input (active-Low) Data inputs Data outputs Clock pulse input (active rising edge) Ground (0V) Positive supply voltage D8 10 D9 11 GND 12 SA00223 1995 Sep 06 1 853-1616 15703 Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger (3-State) 74ABT821 LOGIC SYMBOL LOGIC SYMBOL (IEEE/IEC) 1 13 2 3 4 5 6 7 8 9 10 11 2 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 13 1 CP OE Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 Q9 3 4 5 6 7 8 23 22 21 20 19 18 17 16 15 14 9 10 11 EN C2 2D 1 23 22 21 20 19 18 17 16 15 14 SA00224 SA00225 FUNCTION TABLE INPUTS OE L L L CP ↑ ↑ ↑ Dn l h X INTERNAL REGISTER L H NC OUTPUTS Q0 – Q9 L H NC Z Z Load and read register Hold Disable outputs NC= X= Z= ↑= ↑= No change Don’t care High impedance “off” state Low to High clock transition Not a Low-to-High clock transition OPERATING MODE H ↑ X NC ↑ H Dn Dn H = High voltage level h = High voltage level one set-up time prior to the Low-to-High clock transition L = Low voltage level l = Low voltage level one set-up time prior to the Low-to-High clock transition LOGIC DIAGRAM D0 2 D1 3 D2 4 D3 5 D4 6 D5 7 D6 8 D7 9 D8 10 D9 11 D D D D D D D D D D CP Q CP Q CP Q CP Q CP Q CP Q CP Q CP Q CP Q CP Q 13 CP 1 OE 23 Q0 22 Q1 21 Q2 20 Q3 19 Q4 18 Q5 17 Q6 16 Q7 15 Q8 14 Q9 SA00226 1995 Sep 06 2 Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger (3-State) 74ABT821 ABSOLUTE MAXIMUM RATINGS1, 2 SYMBOL VCC IIK VI IOK VOUT IOUT Tstg PARAMETER DC supply voltage DC input diode current DC input voltage3 VO < 0 output in Off or High state output in Low state VI < 0 CONDITIONS RATING –0.5 to +7.0 –18 –1.2 to +7.0 –50 –0.5 to +5.5 128 –65 to 150 UNIT V mA V mA V mA °C DC output diode current DC output voltage3 DC output current Storage temperature range NOTES: 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C. 3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER Min VCC VI VIH VIL IOH IOL ∆t/∆v Tamb DC supply voltage Input voltage High-level input voltage Low-level input voltage High-level output current Low-level output current Input transition rise or fall rate Operating free-air temperature range 0 –40 4.5 0 2.0 0.8 –32 64 10 +85 LIMITS Max 5.5 VCC V V V V mA mA ns/V °C UNIT 1995 Sep 06 3 Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger (3-State) 74ABT821 DC ELECTRICAL CHARACTERISTICS LIMITS SYMBOL PARAMETER TEST CONDITIONS Tamb = +25°C Min VIK Input clamp voltage VCC = 4.5V; IIK = –18mA VCC = 4.5V; IOH = –3mA; VI = VIL or VIH VOH High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or VIH VCC = 4.5V; IOH = –32mA; VI = VIL or VIH VOL VRST II IOFF IPU/IPD IOZH IOZL ICEX IO ICCH ICCL ICCZ ∆ICC Additional supply current per input pin2 Quiescent supply current Low-level output voltage Power-up output low voltage3 Input leakage current Power-off leakage current Power-up/down 3-State output current4 3-State output High current 3-State output Low current Output High leakage current Output current1 VCC = 4.5V; IOL = 64mA; VI = VIL or VIH VCC = 5.5V; IO = 1mA; VI = GND or VCC VCC = 5.5V; VI = GND or 5.5V VCC = 0.0V; VO or VI ≤ 4.5V VCC = 2.0V; VO = 0.5V; VI = GND or VCC; V OE = VCC VCC = 5.5V; VO = 2.7V; VI = VIL or VIH VCC = 5.5V; VO = 0.5V; VI = VIL or VIH VCC = 5.5V; VO = 5.5V; VI = GND or VCC VCC = 5.5V; VO = 2.5V VCC = 5.5V; Outputs High, VI = GND or VCC VCC = 5.5V; Outputs Low, VI = GND or VCC VCC = 5.5V; Outputs 3-State; VI = GND or VCC VCC = 5.5V; one input at 3.4V, other inputs at VCC or GND –50 2.5 3.0 2.0 Typ –0.9 2.9 3.4 2.4 0.42 0.13 ±0.01 ±5.0 ±5.0 5.0 –5.0 5.0 –100 0.5 25 0.5 0.5 0.55 0.55 ±1.0 ±100 ±50 50 –50 50 –180 250 38 250 1.5 –50 Max –1.2 2.5 3.0 2.0 0.55 0.55 ±1.0 ±100 ±50 50 –50 50 –180 250 38 250 1.5 Tamb = –40°C to +85°C Min Max –1.2 V V V V V V µA µA µA µA µA µA mA µA mA µA mA UNIT NOTES: 1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second. 2. This is the increase in supply current for each input at 3.4V. 3. For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power. 4. This parameter is valid for any VCC between 0V and 2.1V with a transition time of up to 10msec. For VCC = 2.1V to VCC = 5V " 10%, a transition time of up to 100µsec is permitted. AC CHARACTERISTICS GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω LIMITS SYMBOL PARAMETER WAVEFORM Min fMAX tPLH tPHL tPZH tPZL tPHZ tPLZ Maximum clock frequency Propagation delay CP to Qn Output enable time to High and Low level Output disable time from High and Low level 1 1 3 4 3 4 125 2.1 2.8 1.0 2.2 2.7 2.8 Tamb = +25oC VCC = +5.0V Typ 185 4.1 4.6 3.0 4.1 4.7 4.6 5.6 6.2 4.5 5.6 6.2 6.1 Max Tamb = -40 to +85oC VCC = +5.0V ±0.5V Typ 125 2.1 2.8 1.0 2.2 2.7 2.8 6.2 6.7 5.3 6.3 6.7 6.5 Max ns ns ns ns UNIT 1995 Sep 06 4 Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger (3-State) 74ABT821 AC SETUP REQUIREMENTS GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω LIMITS SYMBOL PARAMETER WAVEFORM Tamb = +25oC VCC = +5.0V Min ts(H) ts(L) th(H) th(L) tw(H) tw(L) Setup time, High or Low Dn to CP Hold time, High or Low Dn to CP CP pulse width High or Low 2 2 1 2.1 2.1 1.3 1.3 2.9 3.8 Typ 0.5 0.3 0.0 –0.3 1.8 2.8 Tamb = -40 to +85oC VCC = +5.0V ±0.5V Min 2.1 2.1 1.3 1.3 2.9 3.8 ns ns ns UNIT AC WAVEFORMS VM = 1.5V, VIN = GND to 3.0V 1/fMAX Dn CP VM tW(H) tPHL tW(L) VM CP tPLH VM VM Qn NOTE: The shaded areas indicate when the input is permitted to change for predictable output performance. SA00159 Waveform 1. Propagation Delay, Clock Input to Output, Clock Pulse Width, and Maximum Clock Frequency OE VM tPZL OE VM tPZH VM tPHZ VOH–0.3V Qn VM VM tPLZ Qn VM 0V SA00066 Waveform 4. 3–State Output Enable Time to Low Level and Output Disable Time from Low Level Waveform 3. 3–State Output Enable Time to High Level and Output Disable Time from High Level 1995 Sep 06 5 ÉÉÉ É ÉÉÉÉÉÉÉÉÉ ÉÉÉ É ÉÉÉÉÉÉÉÉÉ ÉÉÉ ÉÉÉÉÉÉÉ ÉÉÉ VM VM VM VM ts(H) th(H) ts(L) th(L) VM VM SA00107 Waveform 2. Data Setup and Hold Times VOL+0.3V 0V SA00067 Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger (3-State) 74ABT821 TEST CIRCUIT AND WAVEFORM VCC 7.0V RL 90% NEGATIVE PULSE VM 10% tTHL (tF) CL RL POSITIVE PULSE 10% tW tTLH (tR) 90% 90% VM 10% 0V 10% 0V tTLH (tR) tTHL (tF) AMP (V) tW VM 90% AMP (V) PULSE GENERATOR VIN D.U.T. RT VOUT Test Circuit for 3-State Outputs VM SWITCH POSITION TEST tPLZ tPZL All other SWITCH closed closed open VM = 1.5V Input Pulse Definition DEFINITIONS RL = Load resistor; see AC CHARACTERISTICS for value. CL = Load capacitance includes jig and probe capacitance; see AC CHARACTERISTICS for value. RT = Termination resistance should be equal to ZOUT of pulse generators. INPUT PULSE REQUIREMENTS FAMILY Amplitude 74ABT 3.0V Rep. Rate 1MHz tW 500ns tR 2.5ns tF 2.5ns SA00012 1995 Sep 06 6