74AUP1G86

74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate Rev. 02.00 — 16 May 2006 Product data sheet 1. General description The 74AUP1G86 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74AUP1G86 provides the single 2-input EXCLUSIVE-OR function. 2. Features s Wide supply voltage range from 0.8 V to 3.6 V s High noise immunity s Complies with JEDEC standards: x JESD8-12 (0.8 V to 1.3 V) x JESD8-11 (0.9 V to 1.65 V) x JESD8-7 (1.2 V to 1.95 V) x JESD8-5 (1.8 V to 2.7 V) x JESD8-B (2.7 V to 3.6 V) s ESD protection: x HBM JESD22-A114-C Class 3A. Exceeds 5000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s Low static power consumption; ICC = 0.9 µA (maximum) s Latch-up performance exceeds 100 mA per JESD 78 Class II s Inputs accept voltages up to 3.6 V s Low noise overshoot and undershoot < 10 % of VCC s IOFF circuitry provides partial Power-down mode operation s Multiple package options s Specified from −40 °C to +85 °C and −40 °C to +125 °C Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate 3. Ordering information Table 1: Ordering information Package Temperature range Name 74AUP1G86GW 74AUP1G86GM 74LVC1G86GF −40 °C to +125 °C −40 °C to +125 °C −40 °C to +125 °C TSSOP5 XSON6 XSON6 Description plastic thin shrink small outline package; 5 leads; body width 1.25 mm Version SOT353-1 Type number plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 × 1.45 × 0.5 mm plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 × 1 × 0.5 mm 4. Marking Table 2: Marking Marking code pH pH pH Type number 74AUP1G86GW 74AUP1G86GM 74AUP1G86GF 5. Functional diagram 1 2 B A Y 4 1 2 =1 mna039 4 mna038 Fig 1. Logic symbol Fig 2. IEC logic symbol B Y A mna040 Fig 3. Logic diagram 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 2 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate 6. Pinning information 6.1 Pinning 74AUP1G86 74AUP1G86 B A 1 2 GND GND 3 001aaf041 B 5 VCC 1 6 VCC B A 74AUP1G86 1 2 3 6 5 4 VCC n.c. Y A 2 5 n.c. 3 4 Y GND 4 Y 001aaf042 001aaf043 Transparent top view Transparent top view Fig 4. Pin configuration SOT353-1 (TSSOP5) Fig 5. Pin configuration SOT886 (XSON6) Fig 6. Pin configuration SOT891 (XSON6) 6.2 Pin description Table 3: Symbol B A GND Y n.c. VCC Pin description Pin TSSOP5 1 2 3 4 5 XSON6 1 2 3 4 5 6 data input B data input A ground (0 V) data output Y not connected supply voltage Description 7. Functional description Table 4: Input A L L H H [1] H = HIGH voltage level; L = LOW voltage level. Function table [1] Output B L H L H Y L H H L 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 3 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate 8. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC IIK VI IOK VO IO ICC IGND Tstg Ptot [1] [2] Parameter supply voltage input clamping current input voltage output clamping current output voltage output current quiescent supply current ground current storage temperature total power dissipation Conditions VI < 0 V [1] Min −0.5 −0.5 [1] [1] Max +4.6 −50 +4.6 −50 VCC + 0.5 +4.6 ±20 +50 −50 +150 250 Unit V mA V mA V V mA mA mA °C mW VO < 0 V active mode Power-down mode VO = 0 V to VCC −0.5 −0.5 −65 Tamb = −40 °C to +125 °C [2] - The input and output voltage ratings may be exceeded if the input and output current ratings are observed. For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K. 9. Recommended operating conditions Table 6: Symbol VCC VI VO Tamb ∆t/∆V Recommended operating conditions Parameter supply voltage input voltage output voltage ambient temperature input transition rise and fall rate VCC = 0.8 V to 3.6 V active mode Power-down mode; VCC = 0 V Conditions Min 0.8 0 0 0 −40 0 Max 3.6 3.6 VCC 3.6 +125 200 Unit V V V V °C ns/V 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 4 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate 10. Static characteristics Table 7: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = 25 °C VIH HIGH-state input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VIL LOW-state input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VOH HIGH-state output voltage VI = VIH or VIL IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V VOL LOW-state output voltage VI = VIH or VIL IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOFF ∆IOFF ICC ∆ICC CI CO input leakage current power-off leakage current additional power-off leakage current quiescent supply current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V [1] Conditions Min Typ Max - Unit V V V V 0.70 × VCC 0.65 × VCC 1.6 2.0 VCC − 0.1 1.11 1.32 2.05 1.9 2.72 2.6 0.8 1.7 0.30 × VCC V 0.35 × VCC V 0.7 0.9 0.1 0.3 × VCC 0.31 0.31 0.31 0.44 0.31 0.44 ±0.1 ±0.2 ±0.2 0.5 40 V V V V V V V V V V V V V V V V V V µA µA µA µA µA pF pF 0.75 × VCC - additional quiescent supply VI = VCC − 0.6 V; IO = 0 A; current VCC = 3.3 V input capacitance output capacitance VCC = 0 V to 3.6 V; VI = GND or VCC VO = GND; VCC = 0 V 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 5 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate Table 7: Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = −40 °C to +85 °C VIH HIGH-state input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VIL LOW-state input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VOH HIGH-state output voltage VI = VIH or VIL IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V VOL LOW-state output voltage VI = VIH or VIL IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOFF ∆IOFF ICC ∆ICC input leakage current power-off leakage current additional power-off leakage current quiescent supply current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V [1] Conditions Min Typ Max - Unit V V V V 0.70 × VCC 0.65 × VCC 1.6 2.0 VCC − 0.1 0.7 × VCC 1.03 1.30 1.97 1.85 2.67 2.55 - 0.30 × VCC V 0.35 × VCC V 0.7 0.9 0.1 0.3 × VCC 0.37 0.35 0.33 0.45 0.33 0.45 ±0.5 ±0.5 ±0.6 0.9 50 V V V V V V V V V V V V V V V V V V µA µA µA µA µA additional quiescent supply VI = VCC − 0.6 V; IO = 0 A; current VCC = 3.3 V 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 6 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate Table 7: Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = −40 °C to +125 °C VIH HIGH-state input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VIL LOW-state input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VOH HIGH-state output voltage VI = VIH or VIL IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V VOL LOW-state output voltage VI = VIH or VIL IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOFF ∆IOFF ICC ∆ICC input leakage current power-off leakage current additional power-off leakage current quiescent supply current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V [1] Conditions Min Typ Max - Unit V V V V 0.75 × VCC 0.70 × VCC 1.6 2.0 - 0.25 × VCC V 0.30 × VCC V 0.7 0.9 0.11 0.41 0.39 0.36 0.50 0.36 0.50 ±0.75 ±0.75 ±0.75 1.4 75 V V V V V V V V V V V V V V V V V µA µA µA µA µA VCC − 0.11 0.6 × VCC 0.93 1.17 1.77 1.67 2.40 2.30 - 0.33 × VCC V additional quiescent supply VI = VCC − 0.6 V; IO = 0 A; current VCC = 3.3 V [1] One input at VCC − 0.6 V, other input at VCC or GND. 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 7 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate 11. Dynamic characteristics Table 8: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8 Symbol tPHL, tPLH Parameter Conditions Min Typ [1] Max Unit Tamb = 25 °C; CL = 5 pF see Figure 7 HIGH-to-LOW and LOW-to-HIGH VCC = 0.8 V propagation delay A or B to Y VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V Tamb = 25 °C; CL = 10 pF tPHL, tPLH HIGH-to-LOW and see Figure 7 LOW-to-HIGH VCC = 0.8 V propagation delay A or B to Y VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V Tamb = 25 °C; CL = 15 pF tPHL, tPLH HIGH-to-LOW and see Figure 7 LOW-to-HIGH VCC = 0.8 V propagation delay A or B to Y VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V Tamb = 25 °C; CL = 30 pF tPHL, tPLH HIGH-to-LOW and see Figure 7 LOW-to-HIGH VCC = 0.8 V propagation delay A or B to Y VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V 3.9 3.2 2.8 2.4 2.2 38.5 9.9 6.9 5.7 4.7 4.4 21.5 12.5 9.8 7.6 7.1 ns ns ns ns ns ns 3.0 2.4 2.1 1.8 1.6 28.2 7.6 5.3 4.4 3.6 3.3 16.5 9.6 7.5 5.9 5.4 ns ns ns ns ns ns 2.6 2.2 1.8 1.5 1.3 24.7 6.8 4.8 3.9 3.1 2.9 14.8 8.7 6.7 5.2 4.8 ns ns ns ns ns ns 2.3 1.8 1.5 1.2 1.0 21.2 5.9 4.1 3.3 2.6 2.3 13.1 7.7 5.9 4.4 4.0 ns ns ns ns ns ns 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 8 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate Table 8: Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8 Symbol CPD Parameter Conditions [2] Min Typ [1] Max Unit Tamb = 25 °C power dissipation capacitance f = 1 MHz; VI = GND to VCC VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [1] [2] All typical values are measured at nominal VCC. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. - 2.7 2.9 3.0 3.1 3.6 4.2 - pF pF pF pF pF pF Table 9: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8 Symbol CL = 5 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay A or B to Y see Figure 7 VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 10 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay A or B to Y see Figure 7 VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V 2.4 1.9 1.7 1.4 1.3 16.2 10.0 8.0 6.2 5.6 2.4 1.9 1.7 1.4 1.3 17.9 11.0 8.8 6.9 6.2 ns ns ns ns ns 2.1 1.6 1.4 1.1 0.9 14.3 8.8 6.9 5.3 4.7 2.1 1.6 1.4 1.1 0.9 15.8 9.7 7.6 5.9 5.2 ns ns ns ns ns Parameter Conditions −40 °C to +85 °C Min Max −40 °C to +125 °C Min Max Unit 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 9 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate Table 9: Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8 Symbol CL = 15 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay A or B to Y see Figure 7 VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 30 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay A or B to Y see Figure 7 VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V 3.5 2.8 2.5 2.2 2.1 24.1 14.8 11.7 9.1 8.3 3.5 2.8 2.5 2.2 2.1 26.6 16.3 12.9 10.1 9.2 ns ns ns ns ns 2.7 2.2 1.9 1.6 1.5 18.1 11.3 9.0 7.0 6.4 2.7 2.2 1.9 1.6 1.5 20.0 12.5 9.9 7.7 7.1 ns ns ns ns ns Parameter Conditions −40 °C to +85 °C Min Max −40 °C to +125 °C Min Max Unit 12. Waveforms VI A, B input GND t PHL VOH Y output VOL VM mna615 VM t PLH Measurement points are given in Table 10. Logic levels: VOL and VOH are typical output voltage drop that occur with the output load. Fig 7. The data input (A or B) to output (Y) propagation delays Table 10: VCC 0.8 V to 3.6 V Measurement points Output VM 0.5 × VCC Input VM 0.5 × VCC VI VCC tr = tf ≤ 3.0 ns Supply voltage 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 10 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate VCC VEXT 5 kΩ PULSE GENERATOR VI VO DUT RT CL RL 001aac521 Test data is given in Table 11. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 8. Load circuitry for switching times Table 11: VCC 0.8 V to 3.6 V [1] Test data Load CL RL [1] Supply voltage VEXT tPLH, tPHL open tPZH, tPHZ GND tPZL, tPLZ 2 × VCC 5 pF, 10 pF, 15 pF and 30 pF 5 kΩ or 1 MΩ For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ. 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 11 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 D E A X c y HE vMA Z 5 4 A2 A1 (A3) θ A 1 e e1 bp 3 wM detail X Lp L 0 1.5 scale 3 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.1 A1 0.1 0 A2 1.0 0.8 A3 0.15 bp 0.30 0.15 c 0.25 0.08 D(1) 2.25 1.85 E(1) 1.35 1.15 e 0.65 e1 1.3 HE 2.25 2.0 L 0.425 Lp 0.46 0.21 v 0.3 w 0.1 y 0.1 Z(1) 0.60 0.15 θ 7° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT353-1 REFERENCES IEC JEDEC MO-203 JEITA SC-88A EUROPEAN PROJECTION ISSUE DATE 00-09-01 03-02-19 Fig 9. Package outline SOT353-1 (TSSOP5) 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 12 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× L1 L (2) e 6 e1 5 e1 4 6× (2) A A1 D E terminal 1 index area 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) max 0.5 A1 max 0.04 b 0.25 0.17 D 1.5 1.4 E 1.05 0.95 e 0.6 e1 0.5 L 0.35 0.27 L1 0.40 0.32 1 scale 2 mm Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC MO-252 JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 Fig 10. Package outline SOT886 (XSON6) 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 13 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm SOT891 1 2 b 3 L1 e L 6 e1 5 e1 4 A A1 D E terminal 1 index area 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 max 0.04 b 0.20 0.12 D 1.05 0.95 E 1.05 0.95 e 0.55 e1 0.35 L 0.35 0.27 L1 0.40 0.32 OUTLINE VERSION SOT891 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-03-11 05-04-06 Fig 11. Package outline SOT891 (XSON6) 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 14 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate 14. Abbreviations Table 12: Acronym CDM CMOS DUT ESD HBM MM TTL Abbreviations Description Charged Device Model Complementary Metal Oxide Semiconductor Device Under Test ElectroStatic Discharge Human Body Model Machine Model Transistor Transistor Logic 15. Revision history Table 13: Revision history Release date Data sheet status Product data sheet Change notice Doc. number Supersedes Document ID 74AUP1G86_1 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 15 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate 16. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 17. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 19. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 18. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 20. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 16 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate 21. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 17 18 19 20 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information . . . . . . . . . . . . . . . . . . . . 16 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 May 2006 Document number: 74AUP1G86_2 Published in The Netherlands