74HC00N

INTEGRATED CIRCUITS DATA SHEET 74HC00; 74HCT00 Quad 2-input NAND gate Product specification Supersedes data of 1997 Aug 26 2003 Jun 30 Philips Semiconductors Product specification Quad 2-input NAND gate FEATURES • Complies with JEDEC standard no. 8-1A • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V • Specified from −40 to +85 °C and −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns. DESCRIPTION 74HC00; 74HCT00 The 74HC00/74HCT00 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC00/74HCT00 provide the 2-input NAND function. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. For 74HC00 the condition is VI = GND to VCC. For 74HCT00 the condition is VI = GND to VCC − 1.5 V. FUNCTION TABLE See note 1. INPUT nA L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. nB L H L H OUTPUT nY H H H L PARAMETER propagation delay nA, nB to nY input capacitance power dissipation capacitance per gate notes 1 and 2 CONDITIONS 74HC00 CL = 15 pF; VCC = 5 V 7 3.5 22 74HCT00 10 3.5 22 ns pF pF UNIT 2003 Jun 30 2 Philips Semiconductors Product specification Quad 2-input NAND gate ORDERING INFORMATION PACKAGE TYPE NUMBER 74HC00N 74HCT00N 74HC00D 74HCT00D 74HC00DB 74HCT00DB 74HC00PW 74HCT00PW 74HC00BQ 74HCT00BQ PINNING PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 SYMBOL 1A 1B 1Y 2A 2B 2Y GND 3Y 3A 3B 4Y 4A 4B VCC DESCRIPTION data input data input data output data input data input data output ground (0 V) data output data input data input data output data input data input supply voltage Fig.1 handbook, halfpage 74HC00; 74HCT00 TEMPERATURE RANGE −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C PINS 14 14 14 14 14 14 14 14 14 14 PACKAGE DIP14 DIP14 SO14 SO14 SSOP14 SSOP14 TSSOP14 TSSOP14 DHVQFN14 DHVQFN14 MATERIAL plastic plastic plastic plastic plastic plastic plastic plastic plastic plastic CODE SOT27-1 SOT27-1 SOT108-1 SOT108-1 SOT337-1 SOT337-1 SOT402-1 SOT402-1 SOT762-1 SOT762-1 1A 1B 1Y 2A 2B 2Y GND 1 2 3 4 5 6 7 MNA210 14 VCC 13 4B 12 4A 00 11 4Y 10 3B 9 8 3A 3Y Pin configuration DIP14, SO14 and (T)SSOP14. 2003 Jun 30 3 Philips Semiconductors Product specification Quad 2-input NAND gate 74HC00; 74HCT00 handbook, halfpage 1A 1 VCC 14 13 12 4B 4A 4Y B 3B 3A handbook, halfpage 1B 1Y 2A 2B 2Y 2 3 4 5 6 7 Top view GND 8 3Y A Y MNA211 GND(1) 11 10 9 MNA950 (1) The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input. Fig.2 Pin configuration DHVQFN14. Fig.3 Logic diagram (one gate). handbook, halfpage handbook, halfpage 1 2 & 3 1 2 4 5 9 10 12 13 1A 1B 2A 2B 3A 3B 4A 4B 1Y 3 4 & 6 2Y 6 5 3Y 8 9 10 & 8 4Y 11 12 & 11 MNA212 13 MNA246 Fig.4 Function diagram. Fig.5 IEC logic symbol. 2003 Jun 30 4 Philips Semiconductors Product specification Quad 2-input NAND gate RECOMMENDED OPERATING CONDITIONS 74HC00 SYMBOL VCC VI VO Tamb PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times CONDITIONS MIN. 2.0 0 0 see DC and AC −40 characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V − − − TYP. 5.0 − − +25 MAX. 6.0 VCC VCC +125 74HC00; 74HCT00 74HCT00 UNIT MIN. 4.5 0 0 −40 TYP. 5.0 − − +25 MAX. 5.5 VCC VCC +125 V V V °C tr, tf − 6.0 − 1000 500 400 − − − − 6.0 − − 500 − ns ns ns LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK IOK IO ICC, IGND Tstg Ptot Note 1. For DIP14 packages: above 70 °C derate linearly with 12 mW/K. For SO14 packages: above 70 °C derate linearly with 8 mW/K. For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K. PARAMETER supply voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation Tamb = −40 to +125 °C; note 1 VI < −0.5 V or VI > VCC + 0.5 V VO < −0.5 V or VO > VCC + 0.5 V −0.5 V < VO < VCC + 0.5 V CONDITIONS − − − − −65 − MIN. −0.5 MAX. +7.0 ±20 ±20 ±25 ±50 +150 500 V mA mA mA mA °C mW UNIT 2003 Jun 30 5 Philips Semiconductors Product specification Quad 2-input NAND gate DC CHARACTERISTICS Type 74HC00 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +85 °C; note 1 VIH HIGH-level input voltage 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −20 µA IO = −20 µA IO = −4.0 mA IO = −5.2 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 5.2 mA ILI IOZ ICC input leakage current VI = VCC or GND 3-state output OFF current VI = VIH or VIL; VO = VCC or GND quiescent supply current 2.0 4.5 6.0 4.5 6.0 6.0 6.0 − − − − − − − − 2.0 4.5 6.0 4.5 6.0 1.9 4.4 5.9 3.84 5.34 1.5 3.15 4.2 − − − VCC (V) MIN. 74HC00; 74HCT00 TYP. MAX. UNIT 1.2 2.4 3.2 0.8 2.1 2.8 2.0 4.5 6.0 4.32 5.81 0 0 0 0.15 0.16 − − − − − − 0.5 1.35 1.8 − − − − − 0.1 0.1 0.1 0.33 0.33 ±1.0 ±.5.0 20 V V V V V V V V V V V V V V V V µA µA µA VI = VCC or GND; IO = 0 6.0 2003 Jun 30 6 Philips Semiconductors Product specification Quad 2-input NAND gate 74HC00; 74HCT00 TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +125 °C VIH HIGH-level input voltage 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −20 µA IO = −20 µA IO = −4.0 mA IO = −5.2 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 5.2 mA ILI IOZ ICC Note 1. All typical values are measured at Tamb = 25 °C. input leakage current VI = VCC or GND 3-state output OFF current VI = VIH or VIL; VO = VCC or GND quiescent supply current 2.0 4.5 6.0 4.5 6.0 6.0 6.0 − − − − − − − − − − − − − − − − 0.1 0.1 0.1 0.4 0.4 ±1.0 ±10.0 40 V V V V V µA µA µA 2.0 4.5 6.0 4.5 6.0 1.9 4.4 5.9 3.7 5.2 − − − − − − − − − − V V V V V 1.5 3.15 4.2 − − − − − − − − − − − − 0.5 1.35 1.8 V V V V V V VCC (V) MIN. TYP. MAX. UNIT VI = VCC or GND; IO = 0 6.0 2003 Jun 30 7 Philips Semiconductors Product specification Quad 2-input NAND gate Type 74HCT00 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +85 °C; note 1 VIH VIL VOH HIGH-level input voltage LOW-level input voltage HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −4.0 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 4.0 mA ILI IOZ input leakage current 3-state output OFF current VI = VCC or GND 4.5 4.5 5.5 − − − − 4.5 4.5 4.4 4.5 to 5.5 4.5 to 5.5 2.0 − VCC (V) 74HC00; 74HCT00 MIN. TYP. MAX. UNIT 1.6 1.2 4.5 4.32 0 0.15 − − − 0.8 − − 0.1 0.33 ±1.0 ±5.0 V V V V V V µA µA 3.84 VI = VIH or VIL; 5.5 VO = VCC or GND; IO = 0 VI = VCC or GND; IO = 0 VI = VCC − 2.1 V; IO = 0 5.5 4.5 to 5.5 ICC ∆ICC quiescent supply current additional supply current per input − − − 150 20 675 µA µA Tamb = −40 to +125 °C VIH VIL VOH HIGH-level input voltage LOW-level input voltage HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −4.0 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 4.0 mA ILI IOZ input leakage current 3-state output OFF current VI = VCC or GND 4.5 4.5 5.5 − − − − − − − − 0.1 0.4 ±1.0 ±10 V V µA µA 4.5 4.5 4.4 3.7 − − − − V V 4.5 to 5.5 4.5 to 5.5 2.0 − − − − 0.8 V V VI = VIH or VIL; 5.5 VO = VCC or GND; IO = 0 VI = VCC or GND; IO = 0 VI = VCC − 2.1 V; IO = 0 5.5 4.5 to 5.5 ICC ∆ICC Note quiescent supply current additional supply current per input − − − − 40 735 µA µA 1. All typical values are measured at Tamb = 25 °C. 2003 Jun 30 8 Philips Semiconductors Product specification Quad 2-input NAND gate AC CHARACTERISTICS Type 74HC00 GND = 0 V; tr = tf = 6 ns; CL = 50 pF. TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS Tamb = −40 to +85 °C; note 1 tPHL/tPLH propagation delay nA, nB to nY see Fig.6 see Fig.6 see Fig.6 tTHL/tTLH output transition time 2.0 4.5 6.0 2.0 4.5 6.0 Tamb = −40 to +125 °C tPHL/tPLH propagation delay nA, nB to nY see Fig.6 see Fig.6 see Fig.6 tTHL/tTLH output transition time 2.0 4.5 6.0 2.0 4.5 6.0 Note 1. All typical values are measured at Tamb = 25 °C. Type 74HCT00 GND = 0 V; tr = tf = 6 ns; CL = 50 pF TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS Tamb = −40 to +85 °C; note 1 tPHL/tPLH tTHL/tTLH propagation delay nA, nB to nY output transition time see Fig.6 4.5 4.5 − − − − VCC (V) − − − − − − − − − − − − VCC (V) 74HC00; 74HCT00 MIN. TYP. MAX. UNIT 25 9 7 19 7 6 − − − − − − 115 23 20 95 19 16 ns ns ns ns ns ns 135 27 23 110 22 19 ns ns ns ns ns ns MIN. TYP MAX. UNIT 12 − − − 24 29 ns ns Tamb = −40 to +125 °C tPHL/tPLH tTHL/tTLH Note 1. All typical values are measured at Tamb = 25 °C. propagation delay nA, nB to nY output transition time see Fig.6 4.5 4.5 29 22 ns ns 2003 Jun 30 9 Philips Semiconductors Product specification Quad 2-input NAND gate AC WAVEFORMS 74HC00; 74HCT00 handbook, halfpage VI VM GND tPHL VOH tPLH nA, nB input nY output VOL VM tTHL tTLH MNA218 74HC00: VM = 50%; VI = GND to VCC. 74HCT00: VM = 1.3 V; VI = GND to 3 V. Fig.6 Waveforms showing the input (nA, nB) to output (nY) propagation delays. 2003 Jun 30 10 Philips Semiconductors Product specification Quad 2-input NAND gate PACKAGE OUTLINES DIP14: plastic dual in-line package; 14 leads (300 mil) 74HC00; 74HCT00 SOT27-1 D seating plane ME A2 A L A1 c Z e b1 b 14 8 MH wM (e 1) pin 1 index E 1 7 0 5 scale 10 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.2 0.17 A1 min. 0.51 0.02 A2 max. 3.2 0.13 b 1.73 1.13 0.068 0.044 b1 0.53 0.38 0.021 0.015 c 0.36 0.23 0.014 0.009 D (1) 19.50 18.55 0.77 0.73 E (1) 6.48 6.20 0.26 0.24 e 2.54 0.1 e1 7.62 0.3 L 3.60 3.05 0.14 0.12 ME 8.25 7.80 0.32 0.31 MH 10.0 8.3 0.39 0.33 w 0.254 0.01 Z (1) max. 2.2 0.087 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE VERSION SOT27-1 REFERENCES IEC 050G04 JEDEC MO-001 JEITA SC-501-14 EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-13 2003 Jun 30 11 Philips Semiconductors Product specification Quad 2-input NAND gate 74HC00; 74HCT00 SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE vMA Z 14 8 Q A2 A1 pin 1 index θ Lp 1 e bp 7 wM L detail X (A 3) A 0 2.5 scale 5 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 8.75 8.55 E (1) 4.0 3.8 0.16 0.15 e 1.27 0.05 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 0.028 0.024 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z (1) 0.7 0.3 0.028 0.012 θ inches 0.069 0.010 0.057 0.004 0.049 0.019 0.0100 0.35 0.014 0.0075 0.34 0.244 0.039 0.041 0.228 0.016 8 0o o Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. OUTLINE VERSION SOT108-1 REFERENCES IEC 076E06 JEDEC MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 2003 Jun 30 12 Philips Semiconductors Product specification Quad 2-input NAND gate 74HC00; 74HCT00 SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 D E A X c y HE vM A Z 14 8 Q A2 pin 1 index Lp L 1 bp 7 wM detail X A1 (A 3) θ A e 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 2 A1 0.21 0.05 A2 1.80 1.65 A3 0.25 bp 0.38 0.25 c 0.20 0.09 D (1) 6.4 6.0 E (1) 5.4 5.2 e 0.65 HE 7.9 7.6 L 1.25 Lp 1.03 0.63 Q 0.9 0.7 v 0.2 w 0.13 y 0.1 Z (1) 1.4 0.9 θ 8 0o o Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT337-1 REFERENCES IEC JEDEC MO-150 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 2003 Jun 30 13 Philips Semiconductors Product specification Quad 2-input NAND gate 74HC00; 74HCT00 TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 D E A X c y HE vMA Z 14 8 Q A2 pin 1 index A1 θ Lp L (A 3) A 1 e bp 7 wM detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.1 A1 0.15 0.05 A2 0.95 0.80 A3 0.25 bp 0.30 0.19 c 0.2 0.1 D (1) 5.1 4.9 E (2) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1 Lp 0.75 0.50 Q 0.4 0.3 v 0.2 w 0.13 y 0.1 Z (1) 0.72 0.38 θ 8 0o o Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT402-1 REFERENCES IEC JEDEC MO-153 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 2003 Jun 30 14 Philips Semiconductors Product specification Quad 2-input NAND gate 74HC00; 74HCT00 DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; SOT762-1 14 terminals; body 2.5 x 3 x 0.85 mm D B A A A1 E c terminal 1 index area detail X terminal 1 index area e 2 L e1 b 6 vMCAB wM C y1 C C y 1 Eh 14 7 e 8 13 Dh 0 9 X 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A(1) max. 1 A1 0.05 0.00 b 0.30 0.18 c 0.2 D (1) 3.1 2.9 Dh 1.65 1.35 E (1) 2.6 2.4 Eh 1.15 0.85 e 0.5 e1 2 L 0.5 0.3 v 0.1 w 0.05 y 0.05 y1 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT762-1 REFERENCES IEC --JEDEC MO-241 JEITA --EUROPEAN PROJECTION ISSUE DATE 02-10-17 03-01-27 2003 Jun 30 15 Philips Semiconductors Product specification Quad 2-input NAND gate DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development 74HC00; 74HCT00 DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Jun 30 16 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613508/03/pp17 Date of release: 2003 Jun 30 Document order number: 9397 750 11258