74HC3G06DC

INTEGRATED CIRCUITS DATA SHEET 74HC3G06; 74HCT3G06 Inverter with open-drain outputs Product specification Supersedes data of 2003 May 15 2003 Dec 02 Philips Semiconductors Product specification Inverter with open-drain outputs FEATURES • Wide supply voltage range from 2.0 to 6.0 V • High noise immunity • Low power dissipation • SOT505-2 and SOT765-1 package • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. • Specified from −40 to +85 °C and −40 to +125 °C. DESCRIPTION 74HC3G06; 74HCT3G06 The 74HC3G06/74HCT3G06 is a high-speed Si-gate CMOS device. Specified in compliance with JEDEC standard no. 7A. The 74HC3G06/74HCT3G06 provides three inverting buffers. The outputs of the 74HC3G06; 74HCT3G06 devices are open drains and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. TYPICAL SYMBOL tPZL tPLZ CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. For 74HC3G06 the condition is VI = GND to VCC. For 74HCT3G06 the condition is VI = GND to VCC − 1.5 V. PARAMETER propagation delay nA to nY propagation delay nA to nY input capacitance power dissipation capacitance per buffer notes 1 and 2 CONDITIONS HC3G CL = 50 pF; VCC = 4.5 V CL = 50 pF; VCC = 4.5 V 9 11 1.5 4 HCT3G 9 12 1.5 4 ns ns pF pF UNIT 2003 Dec 02 2 Philips Semiconductors Product specification Inverter with open-drain outputs FUNCTION TABLE See note 1. INPUT nA L H Note 1. H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state. ORDERING INFORMATION PACKAGE TYPE NUMBER TEMPERATURE RANGE 74HC3G06DP 74HCT3G06DP 74HC3G06DC 74HCT3G06DC PINNING PIN 1 2 3 4 5 6 7 8 1A 3Y 2A GND 2Y 3A 1Y VCC SYMBOL data input data output data input ground (0 V) data output data input data output supply voltage −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C PINS 8 8 8 8 PACKAGE TSSOP8 TSSOP8 VSSOP8 VSSOP8 74HC3G06; 74HCT3G06 OUTPUT nY Z L MATERIAL plastic plastic plastic plastic CODE SOT505-2 SOT505-2 SOT765-1 SOT765-1 MARKING H06 T06 H06 T06 DESCRIPTION 2003 Dec 02 3 Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 handbook, halfpage 1 1 7 handbook, halfpage 1A 1 3Y 2 8 VCC 7 1Y 3A 2Y 6 MNB030 06 2A GND 3 4 6 5 3 1 5 1 2 MNB031 Fig.1 Pin configuration. Fig.2 Logic symbol. handbook, halfpage 1 1A 1Y 7 handbook, halfpage Y 3 2A 2Y 5 A 6 3A 3Y 2 GND MNA586 MNB032 Fig.3 IEC logic symbol. Fig.4 Logic diagram (one driver). 2003 Dec 02 4 Philips Semiconductors Product specification Inverter with open-drain outputs RECOMMENDED OPERATING CONDITIONS 74HC3G06 SYMBOL VCC VI VO Tamb PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times CONDITIONS MIN. 2.0 0 0 see DC and AC −40 characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V − − − TYP. 5.0 − − +25 74HC3G06; 74HCT3G06 74HCT3G06 UNIT MIN. 4.5 0 0 −40 TYP. 5.0 − − +25 MAX. 5.5 5.5 VCC +125 V V V °C MAX. 6.0 6.0 VCC +125 tr, tf − 6.0 − 1000 500 400 − − − − 6.0 − − 500 − ns ns ns LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK IOK VO IO ICC, IGND Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 110 °C the value of PD derates linearly with 8 mW/K. PARAMETER supply voltage input diode current output diode current output voltage output sink current VCC or GND current storage temperature power dissipation Tamb = −40 to +125 °C; note 2 VI < −0.5 V or VI > VCC + 0.5 V; note 1 VO < −0.5 V; note 1 active mode; note 1 high-impedance mode; note 1 −0.5 V < VO < 7.0 V; note 1 note 1 CONDITIONS − − −0.5 −0.5 − − −65 − MIN. −0.5 MAX. +7.0 ±20 −20 7.0 25 50 +150 300 V mA mA V mA mA °C mW UNIT VCC + 0.5 V 2003 Dec 02 5 Philips Semiconductors Product specification Inverter with open-drain outputs DC CHARACTERISTICS 74HC3G06; 74HCT3G06 Type 74HC3G06 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +85 °C; note 1 VIH HIGH-level input voltage 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 20 µA IO = 5.2 mA ILI ILO ICC input leakage current output leakage current quiescent supply current VI = VCC or GND VI = VIH; VO = VCC or GND VI = VCC or GND; IO = 0 2.0 4.5 4.5 6.0 6.0 6.0 6.0 6.0 − − − − − − − − 0 0 0.15 0 0.16 − − − − − − − − − − − − − − − − − 0.1 0.1 0.33 0.1 0.33 ±1.0 ±5.0 10 − − − 0.5 1.35 1.8 0.1 0.1 0.4 0.1 0.4 ±1.0 ±10 20 V V V V V µA µA µA 1.5 3.15 4.2 − − − 1.2 2.4 3.2 0.8 2.1 2.8 − − − 0.5 1.35 1.8 V V V V V V VCC (V) MIN. TYP. MAX. UNIT Tamb = −40 to +125 °C VIH HIGH-level input voltage 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 20 µA IO = 5.2 mA ILI ILO ICC Note 1. All typical values are measured at Tamb = 25 °C. 2003 Dec 02 6 input leakage current output leakage current quiescent supply current VI = VCC or GND VI = VIH; VO = VCC or GND VI = VCC or GND; IO = 0 2.0 4.5 4.5 6.0 6.0 6.0 6.0 6.0 − − − − − − − − V V V V V µA µA µA 1.5 3.15 4.2 − − − V V V V V V Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 Type 74HCT3G06 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +85 °C; note 1 VIH VIL VOL HIGH-level input voltage LOW-level input voltage LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 4.0 mA ILI ILO ICC ∆ICC input leakage current output leakage current quiescent supply current additional supply current per input VI = VCC or GND VI = VIH; VO = VCC or GND VI = VCC or GND; IO = 0 VI = VCC − 2.1 V; IO = 0 4.5 4.5 5.5 5.5 5.5 4.5 to 5.5 − − − − − − 0 0.15 − − − − 0.1 0.33 ±1.0 ±5.0 10 375 V V µA µA µA µA 4.5 to 5.5 4.5 to 5.5 2.0 − 1.6 1.2 − 0.8 V V VCC (V) MIN. TYP. MAX. UNIT Tamb = −40 to +125 °C VIH VIL VOL HIGH-level input voltage LOW-level input voltage LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 4.0 mA ILI ILO ICC ∆ICC Note 1. All typical values are measured at Tamb = 25 °C. input leakage current output leakage current quiescent supply current additional supply current per input VI = VCC or GND VI = VIH; VO = VCC or GND VI = VCC or GND; IO = 0 VI = VCC − 2.1 V; IO = 0 4.5 4.5 5.5 5.5 5.5 4.5 to 5.5 − − − − − − − − − − − − 0.1 0.4 ±1.0 ±10 20 410 V V µA µA µA µA 4.5 to 5.5 4.5 to 5.5 2.0 − − − − 0.8 V V 2003 Dec 02 7 Philips Semiconductors Product specification Inverter with open-drain outputs AC CHARACTERISTICS Type 74HC3G06 GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF. TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS Tamb = −40 to +85 °C; note 1 tPZL propagation delay nA to nY see Figs 5 and 6 2.0 4.5 6.0 tPLZ propagation delay nA to nY see Figs 5 and 6 2.0 4.5 6.0 tTHL output transition time see Figs 5 and 6 2.0 4.5 6.0 Tamb = −40 to +125 °C tPZL propagation delay nA to nY see Figs 5 and 6 2.0 4.5 6.0 tPLZ propagation delay nA to nY see Figs 5 and 6 2.0 4.5 6.0 tTHL output transition time see Figs 5 and 6 2.0 4.5 6.0 Note 1. All typical values are measured at Tamb = 25 °C. 74HC3G06; 74HCT3G06 MIN. VCC (V) − − − − − − − − − − − − − − − − − − TYP. MAX. UNIT 22 9 8 24 11 10 18 6 5 − − − − − − − − − 95 18 16 95 20 19 95 19 16 ns ns ns ns ns ns ns ns ns 125 25 20 125 27 23 125 25 20 ns ns ns ns ns ns ns ns ns 2003 Dec 02 8 Philips Semiconductors Product specification Inverter with open-drain outputs Type 74HCT3G06 GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF. TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS Tamb = −40 to +85 °C; note 1 tPZL tPLZ tTHL propagation delay nA to nY see Figs 5 and 6 propagation delay nA to nY see Figs 5 and 6 output transition time see Figs 5 and 6 2.0 2.0 2.0 74HC3G06; 74HCT3G06 MIN. VCC (V) − − − − − − TYP. MAX. UNIT 9 12 6 − − − 24 27 19 ns ns ns Tamb = −40 to +125 °C tPZL tPLZ tTHL Note 1. All typical values are measured at Tamb = 25 °C. AC WAVEFORMS propagation delay nA to nY see Figs 5 and 6 propagation delay nA to nY see Figs 5 and 6 output transition time see Figs 5 and 6 2.0 2.0 2.0 29 32 22 ns ns ns handbook, full pagewidth VI nA input GND t PLZ VCC nY output VOL Vx t THL VM t PZL VM MNB033 VX = 0.1 × VCC. For 74HC3G06: VM = 50%; VI = GND to VCC. For 74HCT3G06: VM = 1.3 V; VI = GND to 3.0 V. Fig.5 The input (nA) to output (nY) propagation delays and transition times. 2003 Dec 02 9 Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 handbook, full pagewidth S1 VCC PULSE GENERATOR VI D.U.T. RT CL = 50 pF MNA742 VCC open GND RL = VO 1 kΩ TEST tPLH/tPHL tPLZ/tPZL VCC VCC S1 Definitions for test circuit: RL = Load resistor. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. Fig.6 Load circuitry for switching times. 2003 Dec 02 10 Philips Semiconductors Product specification Inverter with open-drain outputs PACKAGE OUTLINES 74HC3G06; 74HCT3G06 TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm SOT505-2 D E A X c y HE vMA Z 8 5 A pin 1 index A2 A1 (A3) Lp L θ 1 e bp 4 wM detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT505-2 REFERENCES IEC JEDEC --JEITA EUROPEAN PROJECTION ISSUE DATE 02-01-16 A max. 1.1 A1 0.15 0.00 A2 0.95 0.75 A3 0.25 bp 0.38 0.22 c 0.18 0.08 D(1) 3.1 2.9 E(1) 3.1 2.9 e 0.65 HE 4.1 3.9 L 0.5 Lp 0.47 0.33 v 0.2 w 0.13 y 0.1 Z(1) 0.70 0.35 θ 8° 0° 2003 Dec 02 11 Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm SOT765-1 D E A X c y HE vMA Z 8 5 Q A pin 1 index A2 A1 (A3) θ Lp L 1 e bp 4 wM detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1 A1 0.15 0.00 A2 0.85 0.60 A3 0.12 bp 0.27 0.17 c 0.23 0.08 D(1) 2.1 1.9 E(2) 2.4 2.2 e 0.5 HE 3.2 3.0 L 0.4 Lp 0.40 0.15 Q 0.21 0.19 v 0.2 w 0.13 y 0.1 Z(1) 0.4 0.1 θ 8° 0° Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT765-1 REFERENCES IEC JEDEC MO-187 JEITA EUROPEAN PROJECTION ISSUE DATE 02-06-07 2003 Dec 02 12 Philips Semiconductors Product specification Inverter with open-drain outputs DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development 74HC3G06; 74HCT3G06 DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Dec 02 13 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R44/02/pp14 Date of release: 2003 Dec 02 Document order number: 9397 750 12344