74HCT3G14

INTEGRATED CIRCUITS DATA SHEET 74HC3G14; 74HCT3G14 Inverting Schmitt-triggers Product specification Supersedes data of 2002 Jul 23 2003 Nov 04 Philips Semiconductors Product specification Inverting Schmitt-triggers FEATURES • Wide supply voltage range from 2.0 to 6.0 V • High noise immunity • Low power dissipation • Balanced propagation delays • Unlimited input rise and fall times • Very small 8 pins package • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. • Specified from −40 to +85 °C and −40 to +125 °C. DESCRIPTION APPLICATIONS 74HC3G14; 74HCT3G14 • Wave and pulse shapers for highly noisy environments • Astable multivibrators • Monostable multivibrators • Output capability: standard. The 74HC3G/HCT3G14 is a high-speed Si-gate CMOS device. The 74HC3G/HCT3G14 provides three inverting buffers with Schmitt-trigger action. This device is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. For HC3G14 the condition is VI = GND to VCC. For HCT3G14 the condition is VI = GND to VCC − 1.5 V. PARAMETER propagation delay nA to nY input capacitance power dissipation capacitance per buffer notes 1 and 2 CONDITIONS HC3G14 CL = 50 pF; VCC = 4.5 V 16 2 10 HCT3G14 21 2 10 ns pF pF UNIT 2003 Nov 04 2 Philips Semiconductors Product specification Inverting Schmitt-triggers FUNCTION TABLE See note 1. INPUT nA L H Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING INFORMATION PACKAGE TYPE NUMBER 74HC3G14DP 74HCT3G14DP 74HC3G14DC 74HCT3G14DC PINNING PIN 1 2 3 4 5 6 7 8 1A 3Y 2A GND 2Y 3A 1Y VCC SYMBOL data input 1A data output 3Y data input 2A ground (0 V) data output 2Y data input 3A data output 1Y supply voltage TEMPERATURE RANGE −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C PINS 8 8 8 8 PACKAGE TSSOP8 TSSOP8 VSSOP8 VSSOP8 74HC3G14; 74HCT3G14 OUTPUT nY H L MATERIAL plastic plastic plastic plastic CODE SOT505-1 SOT505-1 SOT765-1 SOT765-1 MARKING H14 T14 H14 T14 DESCRIPTION 2003 Nov 04 3 Philips Semiconductors Product specification Inverting Schmitt-triggers 74HC3G14; 74HCT3G14 handbook, halfpage handbook, halfpage 1A 1 3Y 2 8 VCC 7 1Y 3A 2Y 1 1A 1Y 7 3G14 2A GND 3 4 MNA739 2 3Y 3A 6 6 5 3 2A 2Y 5 MNA740 Fig.1 Pin configuration. Fig.2 Logic symbol. handbook, halfpage 1 7 6 2 handbook, halfpage A Y MNA025 3 5 MNA741 Fig.3 IEC logic symbol. Fig.4 Logic diagram (one driver). 2003 Nov 04 4 Philips Semiconductors Product specification Inverting Schmitt-triggers RECOMMENDED OPERATING CONDITIONS 74HC3G14 SYMBOL VCC VI VO Tamb PARAMETER supply voltage input voltage output voltage operating ambient temperature CONDITIONS MIN. 2.0 0 0 see DC and AC −40 characteristics per device TYP. 5.0 − − +25 74HC3G14; 74HCT3G14 74HCT3G14 UNIT MIN. 4.5 0 0 −40 TYP. 5.0 − − +25 MAX. 5.5 VCC VCC +125 V V V °C MAX. 6.0 VCC VCC +125 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK IOK IO ICC Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 110 °C the value of PD derates linearly with 8 mW/K. PARAMETER supply voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation Tamb = −40 to +125 °C; note 2 VI < −0.5 V or VI > VCC + 0.5 V; note 1 VO < −0.5 V or VO > VCC + 0.5 V; note 1 −0.5 V < VO < VCC + 0.5 V; note 1 note 1 CONDITIONS MIN. −0.5 − − − − −65 − MAX. +7.0 ±20 ±20 25 50 +150 300 UNIT V mA mA mA mA °C mW 2003 Nov 04 5 Philips Semiconductors Product specification Inverting Schmitt-triggers DC CHARACTERISTICS 74HC3G14; 74HCT3G14 Type 74HC3G14 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL Tamb = 25 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −20 µA IO = −20 µA IO = −4.0 mA IO = −5.2 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 5.2 mA ILI ICC input leakage current quiescent supply current VI = VCC or GND VI = VCC or GND; IO = 0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 − − − − − − − 0 0 0 0.15 0.16 − − 0.1 0.1 0.1 0.26 0.26 ±0.1 1.0 V V V V V µA µA 2.0 4.5 6.0 4.5 6.0 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.32 5.81 − − − − − V V V V V PARAMETER OTHER VCC (V) MIN. TYP. MAX. UNIT Tamb = −40 to +85 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −20 µA IO = −20 µA IO = −4.0 mA IO = −5.2 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 5.2 mA ILI ICC input leakage current quiescent supply current VI = VCC or GND VI = VCC or GND; IO = 0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 − − − − − − − − − − − − − − 0.1 0.1 0.1 0.33 0.33 ±1.0 10 V V V V V µA µA 2.0 4.5 6.0 4.5 6.0 1.9 4.4 5.9 4.13 5.63 − − − − − − − − − − V V V V V 2003 Nov 04 6 Philips Semiconductors Product specification Inverting Schmitt-triggers 74HC3G14; 74HCT3G14 TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +125 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −20 µA IO = −20 µA IO = −4.0 mA IO = −5.2 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 5.2 mA ILI ICC input leakage current quiescent supply current VI = VCC or GND VI = VCC or GND; IO = 0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 − − − − − − − − − − − − − − 0.1 0.1 0.1 0.4 0.4 ±1.0 20 V V V V V µA µA 2.0 4.5 6.0 4.5 6.0 1.9 4.4 5.9 3.7 5.2 − − − − − − − − − − V V V V V VCC (V) MIN. TYP. MAX. UNIT 2003 Nov 04 7 Philips Semiconductors Product specification Inverting Schmitt-triggers 74HC3G14; 74HCT3G14 Type 74HCT3G14 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL Tamb = 25 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −4.0 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 4.0 mA ILI ICC ∆ICC input leakage current quiescent supply current additional supply current per input VI = VCC or GND VI = VCC or GND; IO = 0 VI = VCC − 2.1 V; IO = 0 4.5 4.5 5.5 5.5 4.5 to 5.5 − − − − − 0 0.15 − − − 0.1 0.26 ±0.1 1.0 300 V V µA µA µA 4.5 4.5 4.4 4.18 4.5 4.32 − − V V PARAMETER OTHER VCC (V) MIN. TYP. MAX. UNIT Tamb = −40 to +85 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −4.0 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 4.0 mA ILI ICC ∆ICC input leakage current quiescent supply current additional supply current per input VI = VCC or GND VI = VCC or GND; IO = 0 VI = VCC − 2.1 V; IO = 0 4.5 4.5 5.5 5.5 4.5 to 5.5 − − − − − − − − − − 0.1 0.33 ±1.0 10 375 V V µA µA µA 4.5 4.5 4.4 4.13 − − − − V V Tamb = −40 to +125 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −4.0 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 4.0 mA ILI ICC ∆ICC input leakage current quiescent supply current additional supply current per input VI = VCC or GND VI = VCC or GND; IO = 0 VI = VCC − 2.1 V; IO = 0 4.5 4.5 5.5 5.5 4.5 to 5.5 − − − − − − − − − − 0.1 0.4 ±1.0 20 410 V V µA µA µA 4.5 4.5 4.4 3.7 − − − − V V 2003 Nov 04 8 Philips Semiconductors Product specification Inverting Schmitt-triggers TRANSFER CHARACTERISTICS 74HC3G14; 74HCT3G14 Type 74HC3G14 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL Tamb = 25 °C VT+ positive going threshold voltage see Figs. 5 and 6 2.0 4.5 6.0 VTnegative going threshold voltage see Figs. 5 and 6 2.0 4.5 6.0 VH hysteresis voltage (VT+ − VT-) see Figs. 5 and 6 2.0 4.5 6.0 Tamb = −40 to +85 °C VT+ positive going threshold voltage see Figs. 5 and 6 2.0 4.5 6.0 VTnegative going threshold voltage see Figs. 5 and 6 2.0 4.5 6.0 VH hysteresis voltage (VT+ − VT-) see Figs. 5 and 6 2.0 4.5 6.0 Tamb = −40 to +125 °C VT+ positive going threshold voltage see Figs. 5 and 6 2.0 4.5 6.0 VTnegative going threshold voltage see Figs. 5 and 6 2.0 4.5 6.0 VH hysteresis voltage (VT+ − VT-) see Figs. 5 and 6 2.0 4.5 6.0 1.0 2.3 3.0 0.3 1.13 1.5 0.3 0.6 0.8 − − − − − − − − − 1.5 3.15 4.2 0.9 2.0 2.6 1.0 1.4 1.7 V V V V V V V V V 1.0 2.3 3.0 0.3 1.13 1.5 0.3 0.6 0.8 − − − − − − − − − 1.5 3.15 4.2 0.9 2.0 2.6 1.0 1.4 1.7 V V V V V V V V V 1.0 2.3 3.0 0.3 1.13 1.5 0.3 0.6 0.8 1.18 2.6 3.46 0.6 1.47 2.06 0.6 1.13 1.40 1.5 3.15 4.2 0.9 2.0 2.6 1.0 1.4 1.7 V V V V V V V V V PARAMETER WAVEFORMS VCC (V) MIN. TYP. MAX. UNIT 2003 Nov 04 9 Philips Semiconductors Product specification Inverting Schmitt-triggers 74HC3G14; 74HCT3G14 Type 74HCT3G14 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL Tamb = 25 °C VT+ VTVH positive going threshold voltage negative going threshold voltage hysteresis voltage (VT+ − VT-) see Figs. 5 and 6 see Figs. 5 and 6 see Figs. 5 and 6 4.5 5.5 4.5 5.5 4.5 5.5 1.2 1.4 0.5 0.6 0.4 0.4 1.58 1.78 0.87 1.11 0.71 0.67 − − − − − − − − − − − − 1.9 2.1 1.2 1.4 − − V V V V V V PARAMETER OTHER VCC (V) MIN. TYP. MAX. UNIT Tamb = −40 to +85 °C VT+ VTVH positive going threshold voltage negative going threshold voltage hysteresis voltage (VT+ − VT-) see Figs. 5 and 6 see Figs. 5 and 6 see Figs. 5 and 6 4.5 5.5 4.5 5.5 4.5 5.5 1.2 1.4 0.5 0.6 0.4 0.4 1.9 2.1 1.2 1.4 − − V V V V V V Tamb = −40 to +125 °C VT+ VTVH positive going threshold voltage negative going threshold voltage hysteresis voltage (VT+ − VT-) see Figs. 5 and 6 see Figs. 5 and 6 see Figs. 5 and 6 4.5 5.5 4.5 5.5 4.5 5.5 1.2 1.4 0.5 0.6 0.4 0.4 1.9 2.1 1.2 1.4 − − V V V V V V 2003 Nov 04 10 Philips Semiconductors Product specification Inverting Schmitt-triggers TRANSFER CHARACTERISTIC WAVEFORMS 74HC3G14; 74HCT3G14 handbook, halfpage VO handbook, halfpage VI VT+ VT− VH VO MNA027 VH VT− VT+ VI MNA026 VT+ and VT- are between limits of 20% and 70%. Fig.5 Transfer characteristic. Fig.6 The definitions of VT+, VT− and VH. handbook, halfpage 100 MNA028 handbook, halfpage 1.0 MNA029 ICC (µA) ICC (mA) 0.8 0.6 50 0.4 0.2 0 0 1.0 VI (V) 2.0 0 0 2.5 VI (V) 5.0 VCC = 2.0 V. Fig.7 Typical HC3G transfer characteristics. VCC = 4.5 V. Fig.8 Typical HC3G transfer characteristics. 2003 Nov 04 11 Philips Semiconductors Product specification Inverting Schmitt-triggers 74HC3G14; 74HCT3G14 handbook, halfpage 1.6 MNA030 handbook, halfpage 2.0 MNA031 ICC (mA) ICC (mA) 0.8 1.0 0 0 3.0 VI (V) 6.0 0 0 2.5 VI (V) 5.0 VCC = 6.0 V. Fig.9 Typical HC3G transfer characteristics. VCC = 4.5 V. Fig.10 Typical HCT3G transfer characteristics. handbook, halfpage 3.0 MNA032 ICC (mA) 2.0 1.0 0 0 3.0 VI (V) 6.0 VCC = 5.5 V. Fig.11 Typical HCT3G transfer characteristics. 2003 Nov 04 12 Philips Semiconductors Product specification Inverting Schmitt-triggers AC CHARACTERISTICS Type 74HC3G14 GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF. TEST CONDITIONS SYMBOL Tamb = 125 °C tPHL/tPLH propagation delay nA to nY see Figs 12 and 13 2.0 4.5 6.0 tTHL/tTLH output transition time see Figs 12 and 13 2.0 4.5 6.0 Tamb = −40 to +85 °C tPHL/tPLH propagation delay nA to nY see Figs 12 and 13 2.0 4.5 6.0 tTHL/tTLH output transition time see Figs 12 and 13 2.0 4.5 6.0 Tamb = −40 to +125 °C tPHL/tPLH propagation delay nA to nY see Figs 12 and 13 2.0 4.5 6.0 tTHL/tTLH output transition time see Figs 12 and 13 2.0 4.5 6.0 PARAMETER WAVEFORMS VCC (V) 74HC3G14; 74HCT3G14 MIN. TYP. MAX. UNIT − − − − − − − − − − − − − − − − − − 53 16 13 20 7 5 − − − − − − − − − − − − 125 25 21 75 15 13 ns ns ns ns ns ns 155 31 26 95 19 16 ns ns ns ns ns ns 190 38 32 110 22 19 ns ns ns ns ns ns 2003 Nov 04 13 Philips Semiconductors Product specification Inverting Schmitt-triggers Type 74HCT3G14 GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF. TEST CONDITIONS SYMBOL Tamb = 25 °C tPHL/tPLH tTHL/tTLH propagation delay nA to nY see Figs 12 and 13 output transition time see Figs 12 and 13 4.5 4.5 PARAMETER WAVEFORMS VCC (V) 74HC3G14; 74HCT3G14 MIN. TYP. MAX. UNIT − − − − − − 21 6 − − − − 32 15 ns ns Tamb = −40 to +85 °C tPHL/tPLH tTHL/tTLH propagation delay nA to nY see Figs 12 and 13 output transition time see Figs 12 and 13 4.5 4.5 40 19 ns ns Tamb = −40 to +125 °C tPHL/tPLH tTHL/tTLH propagation delay nA to nY see Figs 12 and 13 output transition time see Figs 12 and 13 4.5 4.5 48 22 ns ns AC WAVEFORMS V handbook, halfpage I nA input GND t PHL VOH nY output VOL t THL VM VM 10% VM VM t PLH 90% t TLH MNA722 For HC3G: VM = 50%; VI = GND to VCC. For HCT3G: VM = 1.3 V; VI = GND to 3.0 V. Fig.12 The input (nA) to output (nY) propagation delays and output transition times. 2003 Nov 04 14 Philips Semiconductors Product specification Inverting Schmitt-triggers 74HC3G14; 74HCT3G14 handbook, full pagewidth S1 VCC PULSE GENERATOR VI D.U.T. RT CL = 50 pF MNA742 VCC open GND RL = VO 1 kΩ TEST tPLH/tPHL tPLZ/tPZL tPHZ/tPZH open VCC GND S1 Definitions for test circuit: CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. Fig.13 Load circuitry for switching times. 2003 Nov 04 15 Philips Semiconductors Product specification Inverting Schmitt-triggers APPLICATION INFORMATION Power dissipation The slow input rise and fall times cause additional power dissipation. This can be calculated using the following formula: Pad = fi × (tr × ICC(AV) + tf × ICC(AV)) × VCC Where: Pad = additional power dissipation (µW) fi = input frequency (MHz) tr = input rise time between 10% and 90% (ns); tf = input fall time between 90% and 10% (ns); ICC(AV) = average additional supply current (µA). Average ICC(AV) differs with positive or negative input transitions, as shown in Fig.14 and Fig.15. Relaxation oscillator A relaxation oscillator circuit using the HC3G14/HCT3G14 is shown in Fig.16. Remark to the application information All values given are typical unless otherwise specified. 50 100 handbook, halfpage 74HC3G14; 74HCT3G14 200 MNA036 ICC(AV) (µA) 150 positive-going edge negative-going edge 0 0 2.0 4.0 VCC (V) 6.0 Linear change of VI between 0.1VCC to 0.9VCC. Fig.14 Average ICC for HC Schmitt-trigger devices. handbook, halfpage 200 MNA058 ICC(AV) (µA) 150 positive-going edge handbook, halfpage R 100 C MNA035 50 negative-going edge 0 0 2 4 VCC (V) 6 1 1 For HC3G: f = -- ≈ ---------------------T 0.8 × RC 1 1 For HCT3G: f = -- ≈ -------------------------T 0.67 × RC Linear change of VI between 0.1VCC to 0.9VCC. Fig.15 Average ICC for HCT Schmitt-trigger devices. Fig.16 Relaxation oscillator using the HC3G/HCT3G14. 2003 Nov 04 16 Philips Semiconductors Product specification Inverting Schmitt-triggers PACKAGE OUTLINES 74HC3G14; 74HCT3G14 TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm SOT505-2 D E A X c y HE vMA Z 8 5 A pin 1 index A2 A1 (A3) Lp L θ 1 e bp 4 wM detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.1 A1 0.15 0.00 A2 0.95 0.75 A3 0.25 bp 0.38 0.22 c 0.18 0.08 D(1) 3.1 2.9 E(1) 3.1 2.9 e 0.65 HE 4.1 3.9 L 0.5 Lp 0.47 0.33 v 0.2 w 0.13 y 0.1 Z(1) 0.70 0.35 θ 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT505-2 REFERENCES IEC JEDEC --JEITA EUROPEAN PROJECTION ISSUE DATE 02-01-16 2003 Nov 04 17 Philips Semiconductors Product specification Inverting Schmitt-triggers 74HC3G14; 74HCT3G14 VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm SOT765-1 D E A X c y HE vMA Z 8 5 Q A pin 1 index A2 A1 (A3) θ Lp L 1 e bp 4 wM detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1 A1 0.15 0.00 A2 0.85 0.60 A3 0.12 bp 0.27 0.17 c 0.23 0.08 D(1) 2.1 1.9 E(2) 2.4 2.2 e 0.5 HE 3.2 3.0 L 0.4 Lp 0.40 0.15 Q 0.21 0.19 v 0.2 w 0.13 y 0.1 Z(1) 0.4 0.1 θ 8° 0° Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT765-1 REFERENCES IEC JEDEC MO-187 JEITA EUROPEAN PROJECTION ISSUE DATE 02-06-07 2003 Nov 04 18 Philips Semiconductors Product specification Inverting Schmitt-triggers DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development 74HC3G14; 74HCT3G14 DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Nov 04 19 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613508/02/pp20 Date of release: 2003 Nov 04 Document order number: 9397 750 10569