74LV27PWDH

INTEGRATED CIRCUITS 74LV27 Triple 3-input NOR gate Product specification Supersedes data of 1997 Feb 03 IC24 Data Handbook 1998 Apr 20 Philips Semiconductors Philips Semiconductors Product specification Triple 3-input NOR gate 74LV27 FEATURES • Wide operating voltage: 1.0 to 5.5 V • Optimized for Low Voltage applications: 1.0 to 3.6 V • Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V • Typical VOLP (output ground bounce) < 0.8 V at VCC = 3.3 V, • Typical VOHV (output VOH undershoot) > 2 V at VCC = 3.3 V, • Output capability: standard • ICC category: SSI QUICK REFERENCE DATA GND = 0 V; Tamb = 25°C; tr = tf ≤ 2.5 ns SYMBOL tPHL/tPLH CI CPD PARAMETER Propagation delay nA, nB, nC to nY Input capacitance Power dissipation capacitance per gate Tamb = 25°C. Tamb = 25°C. DESCRIPTION The 74LV27 is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT27. The 74LV27 provides the 3-input NOR function. CONDITIONS CL = 15 pF; VCC = 3.3 V See Notes 1 and 2 TYPICAL 8 3.5 24 UNIT ns pF pF NOTES: 1. CPD is used to determine the dynamic power dissipation (PD in µW) PD = CPD × VCC2 × fi ) (CL × VCC2 × fo) where: fi = input frequency in MHz; CL = output load capacitance in pF; fo = output frequency in MHz; VCC = supply voltage in V; (CL × VCC2 × fo) = sum of the outputs. 2. The condition is VI = GND to VCC. ORDERING INFORMATION PACKAGES 14-Pin Plastic DIL 14-Pin Plastic SO 14-Pin Plastic SSOP Type II 14-Pin Plastic TSSOP Type I TEMPERATURE RANGE –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C OUTSIDE NORTH AMERICA 74LV27 N 74LV27 D 74LV27 DB 74LV27 PW NORTH AMERICA 74LV27 N 74LV27 D 74LV27 DB 74LV27PW DH PKG. DWG. # SOT27-1 SOT108-1 SOT337-1 SOT402-1 PIN DESCRIPTION PIN NUMBER 1, 3, 9 2, 4, 10 13, 5, 11 7 12, 6, 8 14 SYMBOL 1A – 3A 1B – 3B 1C – 3C GND 1Y – 3Y VCC NAME AND FUNCTION Data inputs Data inputs Data inputs Ground (0 V) Data outputs Positive supply voltage FUNCTION TABLE INPUTS nA L X X H NOTES: H = HIGH voltage level L = LOW voltage level X = don’t care nB L X H X nC L H X X OUTPUTS nY H L L L 1998 Apr 20 2 853–1896 19258 Philips Semiconductors Product specification Triple 3-input NOR gate 74LV27 PIN CONFIGURATION 1A 1B 2A 2B 2C 2Y GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 V CC LOGIC SYMBOL (IEEE/IEC) 1 2 13 ≥1 12 1C 1Y 3C 3B 3A 3Y 3 4 5 ≥1 6 9 SV00446 ≥1 8 10 11 LOGIC SYMBOL SV00448 1 2 13 3 4 5 9 10 11 1A 1B 1C 2A A 2B 2C 3A 3B 3C 3Y 8 2Y 6 B Y 1Y 12 LOGIC DIAGRAM C SV00449 SV00447 RECOMMENDED OPERATING CONDITIONS SYMBOL VCC VI VO Tamb Input voltage Output voltage Operating ambient temperature range in free air See DC and AC characteristics VCC = 1.0V to 2.0V VCC = 2.0V to 2.7V VCC = 2.7V to 3.6V VCC = 3.6V to 5.5V PARAMETER DC supply voltage CONDITIONS See Note 1 MIN 1.0 0 0 –40 –40 – – – – – – – – TYP 3.3 – – MAX 5.5 VCC VCC +85 +125 500 200 100 50 UNIT V V V °C tr, tf Input rise and fall times ns/V NOTE: 1. The LV is guaranteed to function down to VCC = 1.0V (input levels GND or VCC); DC characteristics are guaranteed from VCC = 1.2V to VCC = 5.5V. 1998 Apr 20 3 Philips Semiconductors Product specification Triple 3-input NOR gate 74LV27 ABSOLUTE MAXIMUM RATINGS1, 2 In accordance with the Absolute Maximum Rating System (IEC 134). Voltages are referenced to GND (ground = 0V). SYMBOL VCC "IIK "IOK "IO "IGND, "ICC Tstg PTOT PARAMETER DC supply voltage DC input diode current DC output diode current DC output source or sink current – standard outputs DC VCC or GND current for types with – standard outputs Storage temperature range Power dissipation per package – plastic DIL – plastic mini-pack (SO) – plastic shrink mini-pack (SSOP and TSSOP) for temperature range: –40 to +125°C above +70°C derate linearly with 12 mW/K above +70°C derate linearly with 8 mW/K above +60°C derate linearly with 5.5 mW/K VI < –0.5 or VI > VCC + 0.5V VO < –0.5 or VO > VCC + 0.5V –0.5V < VO < VCC + 0.5V CONDITIONS RATING –0.5 to +7.0 20 50 25 50 –65 to +150 750 500 400 UNIT V mA mA mA mA °C mW NOTES: 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. DC ELECTRICAL CHARACTERISTICS Over recommended operating conditions. Voltages are referenced to GND (ground = 0V). LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN VCC = 1.2V VIH HIGH level Input voltage VCC = 2.0V VCC = 2.7 to 3.6V VCC = 4.5 to 5.5V VCC = 1.2V VIL LOW level Input voltage VCC = 2.0V VCC = 2.7 to 3.6V VCC = 4.5 to 5.5 VCC = 1.2V; VI = VIH or VIL; –IO = 100µA VOH HIGH level output level output voltage; all outputs all out VCC = 2.0V; VI = VIH or VIL; –IO = 100µA VCC = 2.7V; VI = VIH or VIL; –IO = 100µA VCC = 3.0V; VI = VIH or VIL; –IO = 100µA VCC = 4.5V; VI = VIH or VIL; –IO = 100µA VOH HIGH level output voltage; g STANDARD outputs VCC = 3.0V; VI = VIH or VIL; –IO = 6mA VCC = 4.5V; VI = VIH or VIL; –IO = 12mA VCC = 1.2V; VI = VIH or VIL; IO = 100µA VOL LOW level output level output voltage; all outputs all out VCC = 2.0V; VI = VIH or VIL; IO = 100µA VCC = 2.7V; VI = VIH or VIL; IO = 100µA VCC = 3.0V; VI = VIH or VIL; IO = 100µA VCC = 4.5V; VI = VIH or VIL; IO = 100µA VOL LOW level output voltage; g STANDARD outputs Input leakage current VCC = 3.0V; VI = VIH or VIL; IO = 6mA VCC = 4.5V; VI = VIH or VIL; IO = 12mA VCC = 5.5V; VI = VCC or GND 1.8 2.5 2.8 4.3 2.40 3.60 1.2 2.0 2.7 3.0 4.5 2.82 4.20 0 0 0 0 0 0.25 0.35 0.2 0.2 0.2 0.2 0.40 0.55 1.0 0.2 0.2 0.2 0.2 0.50 V 0.65 1.0 µA V 1.8 2.5 2.8 4.3 2.20 V 3.50 V 0.9 1.4 2.0 0.7