INTEGRATED CIRCUITS
DATA SHEET
74LVC2G240 Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
Product specification 2003 Mar 11
Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
FEATURES • Wide supply voltage range from 1.65 to 5.5 V • 5 V tolerant input/output for interfacing with 5 V logic • High noise immunity • Complies with JEDEC standard: – JESD8-7 (1.65 to 1.95 V) – JESD8-5 (2.3 to 2.7 V) – JESD8B/JESD36 (2.7 to 3.6 V). • ±24 mA output drive (VCC = 3.0 V) • CMOS low power consumption • Latch-up performance exceeds 250 mA • Direct interface with TTL levels • Inputs accept voltages up to 5 V • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. • Specified from −40 to +85 °C and −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 2.5 ns. SYMBOL tPHL/tPLH PARAMETER CONDITIONS VCC = 2.5 V; CL = 30 pF; RL = 500 Ω VCC = 2.7 V; CL = 50 pF; RL = 500 Ω VCC = 3.3 V; CL = 50 pF; RL = 500 Ω VCC = 5.0 V; CL = 50 pF; RL = 500 Ω CI CPD input capacitance power dissipation capacitance per buffer output enabled; notes 1 and 2 output disabled; notes 1 and 2 Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; ∑ (CL × VCC2 × fo) = sum of outputs. 2. The condition is VI = GND to VCC. DESCRIPTION
74LVC2G240
The 74LVC2G240 is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 and 5 V environment. This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC2G240 is a dual inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at pins nOE causes outputs to assume a high-impedance OFF-state. Schmitt-trigger action at all inputs makes the circuit highly tolerant for slower input rise and fall times.
TYPICAL 4.1 2.6 3.0 2.5 2.0 2 18 5 ns ns ns ns ns
UNIT
propagation delay inputs nA to output nY VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ
pF pF pF
2003 Mar 11
2
Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
FUNCTION TABLE See note 1. INPUT nOE L L H Note 1. H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. ORDERING INFORMATION PACKAGE TYPE NUMBER 74LVC2G240DP 74LVC2G240DC PINNING PIN 1 2 3 4 5 6 7 8 1OE 1A 2Y GND 2A 1Y 2OE VCC SYMBOL data input data output ground (0 V) data input data output output enable input (active LOW) supply voltage DESCRIPTION output enable input (active LOW) TEMPERATURE RANGE PINS −40 to +125 °C −40 to +125 °C 8 8 PACKAGE MATERIAL TSSOP8 VSSOP8 plastic plastic nA L H X
74LVC2G240
OUTPUT nY H L Z
CODE SOT505-2 SOT765-1
MARKING V240 V40
2003 Mar 11
3
Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
74LVC2G240
handbook, halfpage
handbook, halfpage
1OE 1 1A 2
8 VCC 7 2OE 1Y 2A
1 2 7 5
1OE 1A 2OE 2A 2Y 3 1Y 6
240
2Y GND 3 4
MNA957
6 5
MNA958
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
1
EN
2
6
7
EN
5
MNA959
3
Fig.3 Logic symbol (IEEE/IEC).
2003 Mar 11
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Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
RECOMMENDED OPERATING CONDITIONS SYMBOL VCC VI VO PARAMETER supply voltage input voltage output voltage CONDITIONS 0 VCC = 1.65 to 5.5 V; enable mode 0 VCC = 1.65 to 5.5 V; disable mode 0 VCC = 0 V; Power-down mode Tamb tr, tf operating ambient temperature input rise and fall times VCC = 1.65 to 2.7 V VCC = 2.7 to 5.5 V 0 −40 0 0 MIN. 1.65
74LVC2G240
MAX. 5.5 5.5 VCC 5.5 5.5 +125 20 10 V V V V V
UNIT
°C ns/V ns/V
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK VI IOK VO PARAMETER supply voltage input diode current input voltage output diode current output voltage VI < 0 note 1 VO > VCC or VO < 0 enable mode; notes 1 and 2 disable mode; notes 1 and 2 IO ICC, IGND Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation. 3. Above 110 °C the value of PD derates linearly with 8 mW/K. output source or sink current VCC or GND current storage temperature power dissipation Tamb = −40 to +125 °C; note 3 VO = 0 to VCC CONDITIONS − −0.5 − −0.5 −0.5 − − −65 − MIN. −0.5 MAX. +6.5 −50 +6.5 ±50 +6.5 +6.5 ±50 ±100 +150 300 V mA V mA V V mA mA °C mW UNIT
VCC + 0.5 V
Power-down mode; notes 1 and 2 −0.5
2003 Mar 11
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Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
DC CHARACTERISTICS At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +85 °C VIH HIGH-level input voltage 1.65 to 1.95 2.3 to 2.7 2.7 to 3.6 4.5 to 5.5 VIL LOW-level input voltage 1.65 to 1.95 2.3 to 2.7 2.7 to 3.6 4.5 to 5.5 VOL LOW-level output voltage VI = VIH or VIL IO = 100 µA IO = 4 mA IO = 8 mA IO = 12 mA IO = 24 mA IO = 32 mA VOH HIGH-level output voltage VI = VIH or VIL IO = −100 µA IO = −4 mA IO = −8 mA IO = −12 mA IO = − 24 mA IO = −32 mA ILI IOZ Ioff ICC ∆ICC input leakage current 3-state output OFF-state current power OFF leakage current quiescent supply current additional quiescent supply current per pin VI = 5.5 V or GND VI = VIH or VIL; VO = 5.5 V or GND VI or VO = 5.5 V VI = VCC or GND; IO = 0 VI = VCC − 0.6 V; IO = 0 1.65 to 5.5 1.65 2.3 2.7 3.0 4.5 5.5 3.6 0 5.5 2.3 to 5.5 VCC − 0.1 1.2 1.9 2.2 2.3 3.8 − − − − − − − − − − − ±0.1 ±0.1 ±0.1 0.1 5 1.65 to 5.5 1.65 2.3 2.7 3.0 4.5 − − − − − − − − − − − − 0.65 × VCC 1.7 2.0 0.7 × VCC − − − − − − − − − − − − VCC (V) MIN. TYP.(1)
74LVC2G240
MAX.
UNIT
− − − − 0.35 × VCC 0.7 0.8 0.3 × VCC 0.1 0.45 0.3 0.4 0.55 0.55 − − − − − − ±5 ±10 ±10 10 500
V V V V V V V V V V V V V V V V V V V V µA µA µA µA µA
2003 Mar 11
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Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +125 °C VIH HIGH-level input voltage 1.65 to 1.95 2.3 to 2.7 2.7 to 3.6 4.5 to 5.5 VIL LOW-level input voltage 1.65 to 1.95 2.3 to 2.7 2.7 to 3.6 4.5 to 5.5 VOL LOW-level output voltage VI = VIH or VIL IO = 100 µA IO = 4 mA IO = 8 mA IO = 12 mA IO = 24 mA IO = 32 mA VOH HIGH-level output voltage VI = VIH or VIL IO = −100 µA IO = −4 mA IO = −8 mA IO = −12 mA IO =− 24 mA IO = −32 mA ILI IOZ Ioff ICC ∆ICC Note 1. All typical values are measured at VCC = 3.3 V and Tamb = 25 °C. input leakage current 3-state output OFF-state current power OFF leakage current quiescent supply current additional quiescent supply current per pin VI = 5.5 V or GND VI = VIH or VIL; VO = 5.5 V or GND VI or VO = 5.5 V VI = VCC or GND; IO = 0 VI = VCC − 0.6 V; IO = 0 1.65 to 5.5 1.65 2.3 2.7 3.0 4.5 5.5 3.6 0 5.5 2.3 to 5.5 VCC − 0.1 0.95 1.7 1.9 2.0 3.4 − − − − − − − − − − − − − − − − 1.65 to 5.5 1.65 2.3 2.7 3.0 4.5 − − − − − − − − − − − − 0.65 × VCC 1.7 2.0 0.7 × VCC − − − − − − − − − − − − VCC (V) MIN.
74LVC2G240
TYP.(1)
MAX.
UNIT
− − − − 0.35 × VCC 0.7 0.8 0.3 × VCC 0.1 0.70 0.45 0.60 0.80 0.80 − − − − − − ±20 ±20 ±20 40 5000
V V V V V V V V V V V V V V V V V V V V µA µA µA µA µA
2003 Mar 11
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Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
AC CHARACTERISTICS GND = 0 V. TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS Tamb = −40 to +85 °C; note 1 tPHL/tPLH propagation delay nA to nY see Figs 4 and 6 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 tPZH/tPZL 3-state output enable time nOE to nY see Figs 5 and 6 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 tPHZ/tPLZ 3-state output disable time nOE to nY see Figs 5 and 6 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 Tamb = −40 to +125 °C tPHL/tPLH propagation delay nA to nY see Figs 4 and 6 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 tPZH/tPZL 3-state output enable time nOE to nY see Figs 5 and 6 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 tPHZ/tPLZ 3-state output disable time nOE to nY see Figs 5 and 6 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 Note 1. All typical values are measured at Tamb = 25 °C. 1.0 0.5 1.0 0.5 0.5 1.5 1.0 1.5 0.5 0.5 1.0 0.5 1.0 1.0 0.5 − − − − − − − − − − − − − − − 1.0 0.5 1.0 0.5 0.5 1.5 1.0 1.5 0.5 0.5 1.0 0.5 1.0 1.0 0.5 4.1 2.6 3.0 2.5 2.0 4.5 2.9 3.4 2.5 2.0 3.5 1.9 2.8 2.7 1.9 VCC (V) MIN. TYP.
74LVC2G240
MAX.
UNIT
9.5 5.2 5.5 4.6 4.0 10.3 5.6 5.6 4.7 3.8 11.6 5.8 4.5 4.4 3.4
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
11.9 6.5 6.9 5.8 5.0 12.9 7.0 7.0 5.9 4.8 14.1 7.6 5.8 5.7 4.6
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
2003 Mar 11
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Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
AC WAVEFORMS
74LVC2G240
V handbook, halfpage I nA input GND t PHL VOH nY output VOL VM VM
MNA960
VM
VM
t PLH
INPUT VCC 1.65 to 1.95 V 2.3 to 2.7 V 2.7 V 3.0 to 3.6 V 4.5 to 5.5 V VM 0.5 × VCC 0.5 × VCC 1.5 V 1.5 V 0.5 × VCC VCC VCC 2.7 V 2.7 V VCC VI tr = tf ≤ 2.0 ns ≤ 2.0 ns ≤ 2.5 ns ≤ 2.5 ns ≤ 2.5 ns
VOL and VOH are typical output voltage drop that occur with the output load.
Fig.4 The input (nA) to output (nY) propagation delays and the output transition times.
2003 Mar 11
9
Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
74LVC2G240
handbook, full pagewidth
VI nOE input GND t PLZ VCC output LOW-to-OFF OFF-to-LOW VOL t PHZ VOH output HIGH-to-OFF OFF-to-HIGH GND outputs enabled outputs disabled outputs enabled
MNA961
VM
t PZL
VM VX t PZH VY VM
INPUT VCC 1.65 to 1.95 V 2.3 to 2.7 V 2.7 V 3.0 to 3.6 V 4.5 to 5.5 V VM 0.5 × VCC 0.5 × VCC 1.5 V 1.5 V 0.5 × VCC VCC VCC 2.7 V 2.7 V VCC VI tr = tf ≤ 2.0 ns ≤ 2.0 ns ≤ 2.5 ns ≤ 2.5 ns ≤ 2.5 ns
VX = VOL + 0.3 V at VCC ≥ 2.7 V; VX = VOL + 0.15 V at VCC < 2.7 V; VY = VOH − 0.3 V at VCC ≥ 2.7 V; VY = VOH − 0.15 V at VCC < 2.7 V. VOL and VOH are typical output voltage drop that occur with the output load.
Fig.5 3-state enable and disable times for input nOE.
2003 Mar 11
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Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
74LVC2G240
handbook, full pagewidth
VEXT VCC PULSE GENERATOR VI D.U.T. RT CL RL VO RL
MNA616
VCC 1.65 to 1.95 V 2.3 to 2.7 V 2.7 V 3.0 to 3.6 V 4.5 to 5.5 V
VI VCC VCC 2.7 V 2.7 V VCC
CL 30 pF 30 pF 50 pF 50 pF 50 pF
RL 1 kΩ 500 Ω 500 Ω 500 Ω 500 Ω
VEXT tPLH/tPHL open open open open open tPZH/tPHZ GND GND GND GND GND tPZL/tPLZ 2 × VCC 2 × VCC 6V 6V 2 × VCC
Definitions for test circuit: RL = Load resistor. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig.6 Load circuitry for switching times.
2003 Mar 11
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Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
PACKAGE OUTLINES
74LVC2G240
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
SOT505-2
D
E
A
X
c y HE vMA
Z
8
5
A pin 1 index
A2 A1
(A3)
Lp L
θ
1
e bp
4
wM
detail X
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.1 A1 0.15 0.00 A2 0.95 0.75 A3 0.25 bp 0.38 0.22 c 0.18 0.08 D(1) 3.1 2.9 E(1) 3.1 2.9 e 0.65 HE 4.1 3.9 L 0.5 Lp 0.47 0.33 v 0.2 w 0.13 y 0.1 Z(1) 0.70 0.35 θ 8° 0°
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT505-2 REFERENCES IEC JEDEC --JEITA EUROPEAN PROJECTION ISSUE DATE 02-01-16
2003 Mar 11
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Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
74LVC2G240
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
SOT765-1
D
E
A X
c y HE vMA
Z
8
5
Q A pin 1 index A2 A1 (A3) θ Lp L
1
e bp
4
wM
detail X
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1 A1 0.15 0.00 A2 0.85 0.60 A3 0.12 bp 0.27 0.17 c 0.23 0.08 D(1) 2.1 1.9 E(2) 2.4 2.2 e 0.5 HE 3.2 3.0 L 0.4 Lp 0.40 0.15 Q 0.21 0.19 v 0.2 w 0.13 y 0.1 Z(1) 0.4 0.1 θ 8° 0°
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT765-1 REFERENCES IEC JEDEC MO-187 JEITA EUROPEAN PROJECTION
ISSUE DATE 02-06-07
2003 Mar 11
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Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferably be kept: • below 220 °C for all the BGA packages and packages with a thickness ≥2.5 mm and packages with a thickness