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8547TS

8547TS

  • 厂商:

    PHILIPS

  • 封装:

  • 描述:

    8547TS - 2 x 0.7 W BTL audio amplifier with output channel switching - NXP Semiconductors

  • 数据手册
  • 价格&库存
8547TS 数据手册
INTEGRATED CIRCUITS DATA SHEET TDA8547TS 2 × 0.7 W BTL audio amplifier with output channel switching Product specification Supersedes data of 1997 Oct 14 File under Integrated Circuits, IC01 1998 Apr 01 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching FEATURES • Selection between output channels • Flexibility in use • Few external components • Low saturation voltage of output stage • Gain can be fixed with external resistors • Standby mode controlled by CMOS compatible levels • Low standby current • No switch-on/switch-off plops • High supply voltage ripple rejection • Protected against electrostatic discharge • Outputs short-circuit safe to ground, VCC and across the load • Thermally protected. APPLICATIONS • Telecommunication equipment • Portable consumer products • Personal computers • Motor-driver (servo). QUICK REFERENCE DATA SYMBOL VCC Iq Istb Po PARAMETER supply voltage quiescent current standby current output power two channels one channel THD SVRR total harmonic distortion supply voltage ripple rejection THD = 10%; RL = 8 Ω; VCC = 3.3 V THD = 10%; RL = 16 Ω; VCC = 5 V THD = 10%; RL = 8 Ω; VCC = 5 V THD = 10%; RL = 4 Ω; VCC = 3.3 V Po = 0.4 W 0.5 0.6 1 1 − 50 0.6 0.7 1.2 1.2 VCC = 5 V; 2 channels VCC = 5 V; 1 channel CONDITIONS MIN. 2.2 − − − GENERAL DESCRIPTION TDA8547TS The TDA8547TS is a two channel audio power amplifier for an output power of 2 × 0.7 W with a 16 Ω load at a 5 V supply. At a low supply voltage of 3.3 V an output power of 0.6 W with an 8 Ω load can be obtained. The circuit contains two BTL amplifiers with a complementary PNP-NPN output stage and standby/mute logic. The operating condition of all channels of the device (standby, mute or on) is externally controlled by the MODE pin. With the SELECT pin one of the output channels can be switched in the standby condition. This feature can be used for loudspeaker selection and also reduces the quiescent current consumption. When only one channel is used the maximum output power is 1.2 W. TYP. 5 15 8 − MAX. 18 22 12 10 − − − − − − UNIT V mA mA µA W W W W % dB 0.15 − ORDERING INFORMATION TYPE NUMBER TDA8547TS PACKAGE NAME DESCRIPTION VERSION SOT266-1 SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm 1998 Apr 01 2 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching BLOCK DIAGRAM TDA8547TS handbook, full pagewidth VCC1 VCC2 20 11 − IN1− IN1+ 17 16 − + R VCC1 R 18 OUT1− 20 kΩ − − + 3 OUT1+ 20 kΩ STANDBY/MUTE LOGIC − IN2− IN2+ 14 15 TDA8547TS 13 OUT2− − + R VCC2 R 20 kΩ 5 20 kΩ 4 6 5 2, 7, 9, 12, 19 − − + 8 OUT2+ SVRR MODE SELECT n.c. STANDBY/MUTE LOGIC 1 10 MGK984 GND1 GND2 Fig.1 Block diagram. 1998 Apr 01 3 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching PINNING SYMBOL PIN GND1 n.c. OUT1+ MODE SVRR SELECT n.c. OUT2+ n.c. GND2 VCC2 n.c. OUT2− IN2− IN2+ IN1+ IN1− OUT1− n.c. VCC1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DESCRIPTION ground, channel 1 not connected positive loudspeaker terminal, channel 1 operating mode select (standby, mute, operating) half supply voltage, decoupling ripple rejection input for selection of operating channel not connected positive loudspeaker terminal, channel 2 not connected ground, channel 2 supply voltage, channel 2 not connected negative loudspeaker terminal, channel 2 negative input, channel 2 positive input, channel 2 positive input, channel 1 negative input, channel 1 negative loudspeaker terminal, channel 1 not connected supply voltage, channel 1 SVRR 5 handbook, halfpage TDA8547TS GND1 1 n.c. 2 OUT1+ 3 MODE 4 20 VCC1 19 n.c. 18 OUT1− 17 IN1− 16 IN1+ TDA8547TS SELECT 6 n.c. 7 OUT2+ 8 n.c. 9 GND2 10 MGK998 15 IN2+ 14 IN2− 13 OUT2− 12 n.c. 11 VCC2 Fig.2 Pin configuration. FUNCTIONAL DESCRIPTION The TDA8547TS is a 2 × 0.7 W BTL audio power amplifier capable of delivering 2 × 0.7 W output power to a 16 Ω load at THD = 10% using a 5 V power supply. Using the MODE pin the device can be switched to standby and mute condition. The device is protected by an internal thermal shutdown protection mechanism. The gain can be set within a range from 6 to 30 dB by external feedback resistors. Power amplifier The power amplifier is a Bridge-Tied Load (BTL) amplifier with a complementary PNP-NPN output stage. The voltage loss on the positive supply line is the saturation voltage of a PNP power transistor, on the negative side the saturation voltage of a NPN power 1998 Apr 01 4 transistor. The total voltage loss is (VCC − 0.5 V), or if this pin is floating. At a MODE voltage level of less than 0.5 V the amplifier is fully operational. In the range between 1.5 V and VCC − 1.5 V the amplifier is in mute condition. The mute condition is useful to suppress plop noise at the output caused by charging of the input capacitor. Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching SELECT pin If the voltage at the SELECT pin is in the range between 1.5 V and VCC − 1.5 V, or if it is kept floating, then both channels can be operational. If the SELECT pin is set to a LOW voltage or grounded, then only channel 2 can operate and the power amplifier of channel 1 will be in the standby mode. In this case only the loudspeaker at channel 2 can operate and the loudspeaker at channel 1 will be switched off. If the SELECT pin is set to a HIGH level or connected to VCC, then only channel 1 can operate and the power amplifier of channel 2 will be in the standby mode. In this case only the loudspeaker at channel 1 can operate and the loudspeaker at channel 2 will be switched off. Setting the SELECT pin to a LOW or TDA8547TS a HIGH voltage results in a reduction of quiescent current consumption by a factor of approximately 2. Switching with the SELECT pin during operating is not plop-free, because the input capacitor of the channel which is coming out of standby needs to be charged first. For plop-free channel selecting the device has first to be set in mute condition with the MODE pin (between 1.5 V and VCC − 1.5 V), then set the SELECT pin to the new level, after a delay set the MODE pin to a LOW level. The delay needed depends on the values of the input capacitor and the feedback resistors. Time needed is approx. 10 × C1 × (R1 + R2), so approximately 0.6 s. for the values in Fig.4. Table 1 Control pins MODE and SELECT versus status of output channels Voltage levels at control pins at VP = 5 V; for other supply voltages see Figs. 14 and 15. CONTROL PIN MODE HIGH(1)/NC(2) HVP(4) LOW(5) HVP(4)/LOW(5) HVP(4)/LOW(5) HVP(4)/LOW(5) Notes 1. HIGH = Vpin > VCC − 0.5 V. 2. NC = not connected or floating. 3. X = don’t care. 4. HVP = 1.5 V < Vpin < VCC − 1.5 V. 5. LOW = Vpin < 0.5 V. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC VI IORM Tstg Tamb VPsc Ptot PARAMETER supply voltage input voltage repetitive peak output current storage temperature operating ambient temperature AC and DC short-circuit safe voltage power dissipation CONDITIONS operating MIN. −0.3 −0.3 − −55 −40 − − MAX. +18 VCC + 0.3 1 +150 +85 10 1.1 V V A °C °C V W UNIT SELECT X(3) HVP(4)/NC(2) HVP(4)/NC(2) HIGH(1) HVP(4)/NC(2) LOW(5) STATUS OF OUTPUT CHANNEL CHANNEL 1 CHANNEL 2 standby mute on mute/on mute/on standby standby mute on standby mute/on mute/on 0 15 15 8 15 8 TYP. Iq (mA) 1998 Apr 01 5 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching QUALITY SPECIFICATION In accordance with “SNW-FQ-611-E”. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 110 TDA8547TS UNIT K/W handbook, halfpage 2.0 MGK987 P (W) 1.6 1.2 0.8 0.4 0 0 40 80 120 160 Tamb (°C) Fig.3 Power derating curve. Table 2 Maximum ambient temperature at different conditions CONTINUOUS SINE WAVE DRIVEN RL (Ω) 4 4 8 8 8 8 16 16 Po (W)(1) 1.2 2 × 1.2 0.6 2 × 0.6 1.2 2 × 1.2 0.7 2 × 0.7 VCC (V) 3.3 3.3 3.3 3.3 5 5 5 5 Note 1. At THD = 10%. APPLICATION 1 channel 2 channels 1 channels 2 channels 1 channel 2 channels 1 channel 2 channels Pmax (W) 0.58 1.12 0.3 0.60 0.67 1.33 0.35 0.70 Tamb(max) (°C) 86 27 117 84 76 − 112 73 1998 Apr 01 6 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching TDA8547TS DC CHARACTERISTICS VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; gain = 20 dB; measured in BTL application circuit Fig.4; unless otherwise specified. SYMBOL VCC Iq PARAMETER supply voltage quiescent current CONDITIONS operating BTL 2 channels; note 1 BTL 1 channel; note 1 Istb VO standby current DC output voltage VMODE = VCC note 2 − − − − − − operating mute standby IMODE VSELECT input current MODE pin input voltage SELECT pin 0 V < VMODE < VCC 0 1.5 − MIN. 2.2 5 15 8 − 2.2 − − − − − − − − TYP. MAX. 18 22 12 10 − 50 500 0.5 VCC 20 1 VCC 100 V mA mA µA V mV nA V V µA V V µA UNIT VOUT+ − VOUT− differential output voltage offset IIN+, IIN− VMODE input bias current input voltage MODE pin VCC − 1.5 V VCC − 0.5 − channel 1 = standby; 0 channel 2 = on channel 1 = on; channel 2 = standby VCC − 1 − ISELECT Notes input current SELECT pin VSELECT = 0 V 1. Measured with RL = ∞. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output offset voltage divided by RL. 2. The DC output voltage with respect to ground is approximately 0.5VCC. 1998 Apr 01 7 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching TDA8547TS AC CHARACTERISTICS VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; gain = 20 dB; measured in BTL application circuit Fig.4; unless otherwise specified. SYMBOL Po THD Gv Zi Vno SVRR Vo αcs Notes R2 1. Gain of the amplifier is 2 × ------- in BTL application circuit Fig.4. R1 2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance of RS = 0 Ω at the input. 3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input. The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. 4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input. The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. 5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 Hz to 20 kHz, so including noise. 6. Channel separation is measured at the output with a source impedance of RS = 0 Ω at the input and a frequency of 1 kHz. The output power in the operating channel is set to 0.5 W. PARAMETER output power, one channel total harmonic distortion closed loop voltage gain differential input impedance noise output voltage supply voltage ripple rejection output voltage channel separation note 2 note 3 note 4 note 5 CONDITIONS THD = 10% THD = 0.5% Po = 0.4 W note 1 MIN. 1 0.6 − 6 − − 50 40 − TYP. 1.2 0.9 0.15 − 100 − − − − − MAX. − − 0.3 30 − 100 − − 200 − UNIT W W % dB kΩ µV dB dB µV dB VSELECT = 0.5VCC; note 6 40 1998 Apr 01 8 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching TEST AND APPLICATION INFORMATION Test conditions Because the application can be either Bridge-Tied Load (BTL) or Single-Ended (SE), the curves of each application are shown separately. The thermal resistance = 110 K/W for the SSOP20; the maximum sine wave power dissipation for Tamb = 25 °C 150 – 25 is: --------------------- = 1.14 W 110 For Tamb = 60 °C the maximum total power dissipation is: 150 – 60 --------------------- = 0.82 W 110 Thermal Design Considerations The ‘measured’ thermal resistance of the IC package is highly dependent on the configuration and size of the application board. Data may not be comparable between different Semiconductor manufacturers because the application boards and test methods are not (yet) standardized. Also, the thermal performance of packages for a specific application may be different than presented here, because the configuration of the application boards (copper area!) may be different. Philips Semiconductors uses FR-4 type application boards with 1 oz copper traces with solder coating. The SSOP package has improved thermal conductivity which reduces the thermal resistance. Using a practical PCB layout (see Fig.24) with wider copper tracks to the corner pins and just under the IC, the thermal resistance from junction to ambient can be reduced to about 80 K/W. For Tamb = 60 °C the maximum total power dissipation at 150 – 60 this PCB layout is: --------------------- = 1.12 W 80 Please note that this two channel IC is mentioned for application with only one channel active. For that reason the curves for worst case power dissipation are given for the condition of only one of the both channels driven with a 1 kHz sine wave signal. BTL application Tamb = 25 °C if not specially mentioned, VCC = 5 V, f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass 22 Hz to 22 kHz. The BTL application circuit is illustrated in Fig.4. SE application TDA8547TS The quiescent current has been measured without any load impedance and both channels driven. When one channel is active the quiescent current will be halved. The total harmonic distortion as a function of frequency was measured using a low-pass filter of 80 kHz. The value of capacitor C3 influences the behaviour of the SVRR at low frequencies: increasing the value of C3 increases the performance of the SVRR. The figure of the MODE voltage (VMODE) as a function of the supply voltage shows three areas; operating, mute and standby. It shows, that the DC-switching levels of the mute and standby respectively depend on the supply voltage level. The figure of the SELECT voltage (VSELECT) as a function of the supply voltage shows the voltage levels for switching the channels in the active, mute or standby mode. Tamb = 25 °C if not specially mentioned, VCC = 7.5 V, f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass 22 Hz to 22 kHz. The SE application circuit is illustrated in Fig.16. Increasing the value of electrolytic capacitor C3 will result in a better channel separation. Because the positive output is not designed for high output current (2 × Io) at low load impedance (≤16 Ω), the SE application with output capacitors connected to ground is advised. The capacitor value of C6/C7 in combination with the load impedance determines the low frequency behaviour. The THD as a function of frequency was measured using a low-pass filter of 80 kHz. The value of capacitor C3 influences the behaviour of the SVRR at low frequencies: increasing the value of C3 increases the performance of the SVRR. General remark The frequency characteristic can be adapted by connecting a small capacitor across the feedback resistor. To improve the immunity to HF radiation in radio circuit applications, a small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this creates a low-pass filter. 1998 Apr 01 9 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching BTL APPLICATION TDA8547TS handbook, full pagewidth C1 1 µF R2 R1 10 kΩ 50 kΩ IN1− IN1+ C3 47 µF 17 20 11 18 OUT1− C4 100 nF VCC C5 100 µF Vi1 16 RL1 3 OUT1+ OUT2− C2 1 µF R4 R3 10 kΩ Vi2 50 kΩ IN2− IN2+ SVRR MODE SELECT R2 Gain channel 1 = 2 × ------R1 R4 Gain channel 2 = 2 × ------R3 GND MGK985 TDA8547TS 14 15 5 4 6 1 10 8 OUT2+ 13 OUT2− RL2 Fig.4 BTL application. handbook, halfpage 30 MGD890 handbook, halfpage 10 MGK988 Iq (mA) THD (%) (1) 20 1 10 10−1 0 0 4 8 12 20 16 VCC (V) 10−2 10−2 10−1 1 Po (W) 10 RL = ∞. f = 1 kHz; Gv = 20 dB. (1) VCC = 5 V; RL = 8 Ω. Fig.5 Iq as a function of VCC. Fig.6 THD as a function of Po. 1998 Apr 01 10 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching TDA8547TS handbook, halfpage 10 MGK989 andbook, halfpage −60 MGK699 THD (%) 1 (1) αcs (dB) −70 (1) (2) −80 (3) 10−1 −90 10−2 10 102 103 104 f (Hz) 105 −100 10 102 103 104 f (Hz) 105 Po = 0.5 W; Gv = 20 dB. (1) VCC = 5 V; RL = 8 Ω. VCC = 5 V; Vo = 2 V; RL = 8 Ω. (1) Gv = 30 dB. (2) Gv = 20 dB. (3) Gv = 6 dB. Fig.8 Fig.7 THD as a function of frequency. Channel separation as a function of frequency. handbook, halfpage −20 MGD894 handbook, halfpage 2 MGK990 SVRR (dB) −40 (1) Po (W) 1.5 (1) (2) 1 (2) −60 (3) 0.5 −80 10 102 103 104 f (Hz) 105 0 0 4 8 VCC (V) 12 VCC = 5 V; RS = 0 Ω; Vr = 100 mV. (1) Gv = 30 dB. (2) Gv = 20 dB. (3) Gv = 6 dB. THD = 10%. (1) RL = 8 Ω. (2) RL = 16 Ω. Fig.9 SVRR as a function of frequency. Fig.10 Po as a function of VCC. 1998 Apr 01 11 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching TDA8547TS handbook, halfpage 1.5 MGK991 handbook, halfpage 1.5 MGK992 P (W) 1.0 (1) (2) P (W) 1 (1) 0.5 0.5 0 0 4 8 VCC (V) 12 0 0 0.5 1 Po (W) 1.5 (1) RL = 8 Ω. (2) RL = 16 Ω. Sine wave of 1 kHz. (1) VCC = 5 V; RL = 8 Ω. Fig.11 Worst case power dissipation as a function of VCC (one channel active). Fig.12 Power dissipation as a function of Po (one channel active). handbook, halfpage V 10 o (V) 1 MGL211 handbook, halfpage 16 MGL210 VMODE (V) 12 standby 10−1 10−2 10−3 10−4 10−5 10−6 10−1 (1) (2) (3) 8 mute 4 operating 1 10 VMODE (V) 102 0 0 4 8 12 VP (V) 16 Band-pass = 22 Hz to 22 kHz. (1) VCC = 3 V. (2) VCC = 5 V. (3) VCC = 12 V. Fig.13 Vo as a function of VMODE. Fig.14 VMODE as a function of VP. 1998 Apr 01 12 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching TDA8547TS handbook, full pagewidth 20 MGK700 VSELECT (V) 16 12 channel 2 standby channel 1 + 2 on VP channel 1 on channel 2 on 8 4 channel 1 standby 0 0 2 4 6 8 10 12 14 16 VP (V) 18 20 Fig.15 VSELECT as a function of VP. SE APPLICATION handbook, full pagewidth C1 1 µF R2 R1 10 kΩ 100 kΩ IN1− IN1+ C3 47 µF OUT2− 17 16 20 11 OUT1− C4 100 nF C6 470 µF OUT1+ 18 VCC C5 100 µF Vi1 RL1 3 IN2− IN2+ SVRR MODE SELECT C2 1 µF R4 R3 10 kΩ 100 kΩ 14 15 5 4 6 TDA8547TS 13 OUT2− C7 470 µF OUT2+ Vi2 RL2 8 1 10 R2 Gain channel 1 = ------R1 R4 Gain channel 2 = ------R3 GND MGK986 Fig.16 SE application. 1998 Apr 01 13 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching TDA8547TS handbook, halfpage 10 MGD899 handbook, halfpage 10 MGD900 THD (%) 1 THD (%) 1 (1) (2) 10−1 (3) 10−1 (1) (2) (3) 10−2 10−2 10−1 1 Po (W) 10 10−2 10 102 103 104 f (Hz) 105 f = 1 kHz; Gv = 20 dB. (1) VCC = 7.5 V; RL = 4 Ω. (2) VCC = 9 V; RL = 8 Ω. (3) VCC = 12 V; RL = 16 Ω. Po = 0.5 W; Gv = 20 dB. (1) VCC = 7.5 V; RL = 4 Ω. (2) VCC = 9 V; RL = 8 Ω. (3) VCC = 12 V; RL = 16 Ω. Fig.17 THD as a function of Po. Fig.18 THD as a function of frequency. handbook, halfpage −40 MGK993 αcs (dB) −60 (1) (2) handbook, halfpage −20 MGD902 SVRR (dB) −40 (1) (2) −80 (3) (4) −60 (3) −100 10 102 103 104 f (Hz) 105 −80 10 102 103 104 f (Hz) 105 Vo = 1 V; Gv = 20 dB. (1) VCC = 7.5 V; RL = 4 Ω. (2) VCC = 9 V; RL = 8 Ω. (3) VCC = 12 V; RL = 16 Ω. (4) VCC = 5 V; RL = 32 Ω. VCC = 7.5 V; RL = 4 Ω; RS = 0 Ω; Vr = 100 mV. (1) Gv = 24 dB. (2) Gv = 20 dB. (3) Gv = 0 dB. Fig.19 Channel separation as a function of frequency. Fig.20 SVRR as a function of frequency. 1998 Apr 01 14 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching TDA8547TS handbook, halfpage 2 MGK994 Po (W) 1.6 handbook, halfpage 1.5 MGK995 P (W) 1.0 1.2 (1) (2) (3) (1) (2) (3) 0.8 0.5 0.4 0 0 4 8 12 VCC (V) 16 0 0 (1) RL = 4 Ω. (2) RL = 8 Ω. (3) RL = 16 Ω. 4 8 12 VCC (V) 16 THD = 10%. (1) RL = 4 Ω. (2) RL = 8 Ω. (3) RL = 16 Ω. Fig.21 Po as a function of VCC. Fig.22 Worst case power dissipation as a function of VCC (one channel active). handbook, halfpage 1.2 MGK996 P (W) 0.8 (1) (2) (3) 0.4 0 0 0.4 0.8 1.2 Po (W) 1.6 Sine wave of 1 kHz. (1) VCC = 12 V; RL = 16 Ω. (2) VCC = 7.5 V; RL = 4 Ω. (3) VCC = 9 V; RL = 8 Ω. Fig.23 Power dissipation as a function of Po (one channel active). 1998 Apr 01 15 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching TDA8547TS handbook, full pagewidth a. Top view copper layout. +VCC GND −OUT1 100 µF +OUT1 10 kΩ TDA 8542TS 8547TS IN1 1 µF 56 kΩ 100 nF 10 kΩ 20 1 MODE 11 kΩ 11 kΩ 11 TDA 10 8542/47TS 47 µF SELECT IN2 1 µF 56 kΩ CIC Nijmegen +OUT2 MGK997 −OUT2 b. Top view components layout. Fig.24 Printed-circuit board layout (BTL). 1998 Apr 01 16 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm TDA8547TS SOT266-1 D E A X c y HE vM A Z 20 11 Q A2 pin 1 index A1 (A 3) θ Lp L A 1 e bp 10 detail X wM 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.20 0.13 D (1) 6.6 6.4 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 θ 10 0o o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT266-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 90-04-05 95-02-25 1998 Apr 01 17 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. TDA8547TS Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. 1998 Apr 01 18 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier with output channel switching DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values TDA8547TS This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Apr 01 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 © Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 545102/00/02/pp20 Date of release: 1998 Apr 01 Document order number: 9397 750 03347
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