ACT108-600E

ACT108-600E AC Thyristor power switch Rev. 02 — 21 October 2009 Product data sheet 1. Product profile 1.1 General description AC Thyristor power switch in a SOT54 plastic package with self-protective capabilities against low and high energy transients 1.2 Features and benefits Exclusive negative gate triggering Full cycle AC conduction Remote gate separates the gate driver from the effects of the load current Safe clamping of low energy over-voltage transients Self-protective turn-on during high energy voltage transients Very high noise immunity 1.3 Applications Fan motor circuits Lower-power highly inductive, resistive and safety loads Pump motor circuits 1.4 Quick reference data Table 1. VDRM IGT Quick reference Conditions Min VD = 12 V; IT = 100 mA; LD+G-; Tj = 25 °C; see Figure 6 VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C IT(RMS) dVD/dt RMS on-state current rate of rise of off-state voltage clamping voltage peak pulse voltage on-state voltage full sine wave; Tlead ≤ 71 °C; see Figure 1 VDM = 402 V; Tj = 125 °C; gate open circuit; see Figure 10 ICL = 100 mA; tp = 1 ms; Tj ≤ 125 °C; see Figure 13 Tj = 25 °C; non-repetitive, off-state; see Figure 4 IT = 1.1 A; see Figure 9 1 Typ Max 600 10 Unit V mA repetitive peak off-state voltage gate trigger current Symbol Parameter 1 1000 - 10 0.8 - mA A V/µs VCL VPP VT 650 - - 2 1.3 V kV V NXP Semiconductors ACT108-600E AC Thyristor power switch 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol CM G LD Description common gate load G CM 001aaj924 Simplified outline Graphic symbol LD 321 SOT54 (TO-92) 3. Ordering information Table 3. Ordering information Package Name ACT108-600E TO-92 Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 Type number 4. Limiting values Table 4. Symbol VDRM IT(RMS) ITSM Limiting values Parameter repetitive peak off-state voltage RMS on-state current non-repetitive peak on-state current I2t for fusing rate of rise of on-state current peak gate current peak gate voltage average gate power storage temperature junction temperature peak pulse voltage Tj = 25 °C; non-repetitive, off-state; see Figure 4 full sine wave; Tlead ≤ 71 °C; see Figure 1 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 2 and 3 tp = 10 ms; sine-wave pulse IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs t = 20 μs positive applied gate voltage over any 20 ms period Conditions Min -40 Max 600 0.8 8.8 8 0.32 100 1 15 0.1 150 125 2 Unit V A A A A2s A/µs A V W °C °C kV In accordance with the Absolute Maximum Rating System (IEC 60134). I2t dIT/dt IGM VGM PG(AV) Tstg Tj VPP ACT108-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 October 2009 2 of 12 NXP Semiconductors ACT108-600E AC Thyristor power switch 1.0 Ptot (W) 0.8 α α 003aac803 α = 180° 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IT(RMS) (A) 0.8 Fig 1. 10 ITSM (A) 8 Total power dissipation as a function of RMS on-state current; maximum values 003aac804 6 4 IT ITSM t 1/f 2 Tj(init) = 25 °C max 0 1 10 102 number of cycles 103 Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values ACT108-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 October 2009 3 of 12 NXP Semiconductors ACT108-600E AC Thyristor power switch 103 ITSM (A) IT 003aac805 ITSM t 102 tp Tj(init) = 25 °C max 10 1 10−5 10−4 10−3 tp (s) 10−2 Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values IEC 61000-4-5 Standards Surge Generator Open Circuit Voltage 1.2 μs/50 μs waveform RGen 2Ω R 150 Ω L 5 μH RG 220 Ω Surge pulse Load Model DUT 003aad077 Fig 4. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5 ACT108-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 October 2009 4 of 12 NXP Semiconductors ACT108-600E AC Thyristor power switch 5. Thermal characteristics Table 5. Symbol Rth(j-lead) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 150 Max 60 Unit K/W K/W thermal resistance from full cycle with heatsink compound; junction to lead see Figure 5 thermal resistance from full cycle; printed-circuit board mounted; junction to ambient lead length 4 mm 102 Zth(j-lead) (K/W) 10 003aad294 1 P 10−1 tp t 10−2 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 5. Transient thermal impedance from junction to lead as a function of pulse width ACT108-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 October 2009 5 of 12 NXP Semiconductors ACT108-600E AC Thyristor power switch 6. Characteristics Table 6. Symbol IGT Characteristics Parameter gate trigger current Conditions VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; see Figure 6 VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C IL IH VT VGT ID dVD/dt dIcom/dt latching current holding current on-state voltage gate trigger voltage off-state current rate of rise of off-state voltage rate of change of commutating current clamping voltage VD = 12 V; IG = 12 mA; Tj = 25 °C; see Figure 7 VD = 12 V; Tj = 25 °C; see Figure 8 IT = 1.1 A; see Figure 9 VD = 600 V; IT = 100 mA; Tj ≤ 125 °C VD = 600 V; IT = 100 mA; Tj = 25 °C VD = 600 V; Tj ≤ 125 °C VD = 600 V; Tj ≤ 25 °C VDM = 402 V; Tj = 125 °C; gate open circuit; see Figure 10 VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 15 V/µs; gate open circuit; see Figure 11 and 12 ICL = 100 mA; tp = 1 ms; Tj ≤ 125 °C; see Figure 13 Min 1 1 0.15 1000 0.3 Typ 9 Max 10 10 30 25 1.3 1 0.2 2 Unit mA mA mA mA V V V mA µA V/µs A/ms VCL 650 - - V 3 IGT IGT(25°C) 2 (1) 003aac809 3 IL IL(25°C) 2 003aac811 (2) 1 1 (2) (1) 0 −50 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 Fig 7. Fig 6. Normalized gate trigger current as a function of junction temperature Normalized latching current as a function of junction temperature ACT108-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 October 2009 6 of 12 NXP Semiconductors ACT108-600E AC Thyristor power switch 3 IH IH(25°C) 2 003aac810 2.0 IT (A) 1.5 003aac812 1.0 1 (1) (2) (3) 0.5 0 −50 0 50 100 Tj (°C) 150 0.0 0.0 0.5 1.0 1.5 VT (V) 2.0 Fig 8. Normalized holding current as a function of junction temperature Fig 9. On-state current as a function of on-state voltage 12 003aac814 12 A B 10 003aac813 A B 8 8 6 4 4 2 0 25 50 75 100 Tj (°C) 125 0 25 50 75 100 Tj (°C) 125 Fig 10. Normalized rate of rise of off-state voltage as a function of junction temperature Fig 11. Normalized critical rate of rise of commutating current as a function of junction temperature ACT108-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 October 2009 7 of 12 NXP Semiconductors ACT108-600E AC Thyristor power switch 2.0 A [B] A [spec] 1.5 003aac815 1.2 VCL VCL(25°C) 0.8 003aac817 1.0 0.4 0.5 0 10−1 1 10 B (V/μs) 102 0 −50 0 50 100 Tj (°C) 150 Fig 13. Normalized clamping voltage (upper limit) as a function of junction temperature; minimum values Fig 12. Normalized critical rate of change of commutating current as a function of critical rate of change of commutating voltage; minimum values ACT108-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 October 2009 8 of 12 NXP Semiconductors ACT108-600E AC Thyristor power switch 7. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max. 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Fig 14. Package outline SOT54 (TO-92) ACT108-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 October 2009 9 of 12 NXP Semiconductors ACT108-600E AC Thyristor power switch 8. Revision history Table 7. Revision history Release date 20091021 Data sheet status Product data sheet Product data sheet Change notice Supersedes ACT108-600E_1 Document ID ACT108-600E_2 Modifications: ACT108-600E_1 • Various changes to content. 20090901 ACT108-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 October 2009 10 of 12 NXP Semiconductors ACT108-600E AC Thyristor power switch 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com ACT108-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 October 2009 11 of 12 NXP Semiconductors ACT108-600E AC Thyristor power switch 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 October 2009 Document identifier: ACT108-600E_2