ADC1112D125
Dual 11-bit ADC; CMOS or LVDS DDR digital outputs
Rev. 2 — 3 March 2011 Product data sheet
1. General description
The ADC1112D125 is a dual channel 11-bit Analog-to-Digital Converter (ADC) optimized for high dynamic performance and low power consumption. Pipelined architecture and output error correction ensure the ADC1112D125 is accurate enough to guarantee zero missing codes over the entire operating range. Supplied from a single 3 V source, it can handle output logic levels from 1.8 V to 3.3 V in Complementary Metal Oxide Semiconductor (CMOS) mode, because of a separate digital output supply. It supports the Low Voltage Differential Signalling (LVDS) Double Data Rate (DDR) output standard. An integrated Serial Peripheral Interface (SPI) allows the user to easily configure the ADC. The device also includes a programmable full-scale SPI to allow a flexible input voltage range of 1 V (p-p) to 2 V (p-p). With excellent dynamic performance from the baseband to input frequencies of 170 MHz or more, the ADC1112D125 is ideal for use in communications, imaging and medical applications.
2. Features and benefits
SNR, 66.2 dBFS SFDR, 87 dBc Sample rate up to 125 Msps Clock input divided by 2 to reduce jitter contribution Single 3 V supply Flexible input voltage range: 1 V (p-p) to 2 V (p-p) CMOS or LVDS DDR digital outputs Power-down and Sleep modes Input bandwidth, 600 MHz Power dissipation, 1230 mW Serial Peripheral Interface (SPI) Duty cycle stabilizer Fast OuT-of-Range (OTR) detection Pin and software compatible with ADC1412D series and ADC1212D series. Offset binary, two’s complement, gray code HVQFN64 package
3. Applications
Wireless and wired broadband communications Spectral analysis Ultrasound equipment Portable instrumentation Imaging systems Software defined radio
NXP Semiconductors
ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
4. Ordering information
Table 1. Ordering information fs (Msps) Package Name ADC1112D125HN/C1 125 Description Version SOT804-3 HVQFN64 plastic thermal enhanced very thin quad flat package; no leads; 64 terminals; body 9 × 9 × 0.85 mm Type number
5. Block diagram
SDIO/ODS SCLK/DFS CS
ADC1112D125
ERROR CORRECTION AND DIGITAL PROCESSING SPI INTERFACE
OTRA
INAP T/H INPUT STAGE INAM ADC A CORE 11-BIT PIPELINED OUTPUT DRIVERS
CMOS: DA10 to DA0 or LVDS/DDR: DA9_DA10_P to LOW_DA0_P DA9_DA10_M to LOW_DA0_M CMOS: DAV or LVDS/DDR: DAVP DAVM CMOS: DB10 to DB0 or LVDS/DDR: DB9_DB10_P to LOW_DB0_P DB9_DB10_M to LOW_DB0_M OTRB
CLKP CLKM
CLOCK INPUT STAGE AND DUTY CYCLE CONTROL
OUTPUT DRIVERS
INBP T/H INPUT STAGE INBM ADC B CORE 11-BIT PIPELINED OUTPUT DRIVERS
ERROR CORRECTION AND DIGITAL PROCESSING
SYSTEM REFERENCE AND POWER MANAGEMENT
CTRL
REFBT REFBB VCMB VCMA SENSE VREF
REFAB REFAT
005aaa161
Fig 1. Block diagram
ADC1112D125
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Product data sheet
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NXP Semiconductors
ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
6. Pinning information
6.1 CMOS outputs selected
6.1.1 Pinning
62 SENSE
50 VDDO
terminal 1 index area INAP INAM AGND VCMA REFAT REFAB AGND CLKP CLKM 1 2 3 4 5 6 7 8 9
49 VDDO 48 DA2 47 DA1 46 DA0 45 n.c. 44 n.c. 43 n.c. 42 DAV 41 n.c. 40 n.c. 39 n.c. 38 n.c. 37 DB0 36 DB1 35 DB2 34 DB3 33 DB4 VDDO 32
005aaa162
64 VDDA
61 VDDA
60 DECA
59 OTRA
63 VREF
58 DA10
57 DA9
56 DA8
55 DA7
54 DA6
53 DA5 DB7 28
52 DA4 DB6 29
ADC1112D125 HVQFN64
AGND 10 REFBB 11 REFBT 12 VCMB 13 AGND 14 INBM 15 INBP 16 VDDA 17 VDDA 18 SCLK/DFS 19 SDIO/ODS 20 CS 21 CTRL 22 DECB 23 OTRB 24 DB10 25 DB9 26 DB8 27 DB5 30 VDDO 31
Transparent top view
Fig 2.
Pin configuration with CMOS digital outputs selected
6.1.2 Pin description
Table 2. Symbol INAP INAM AGND VCMA REFAT REFAB AGND CLKP CLKM AGND REFBB REFBT
ADC1112D125
Pin description (CMOS digital outputs) Pin 1 2 3 4 5 6 7 8 9 10 11 12 Type [1] I I G O O O G I I G O O Description analog input; channel A complementary analog input; channel A analog ground common-mode output voltage; channel A top reference; channel A bottom reference; channel A analog ground clock input complementary clock input analog ground bottom reference; channel B top reference; channel B
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Product data sheet
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51 DA3
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
Pin description (CMOS digital outputs) …continued Pin 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 Type [1] O G I I P P I I/O I I O O O O O O O O P P O O O O O O O O O O O O O O O P P O O O O O O Description common-mode output voltage; channel B analog ground complementary analog input; channel B analog input; channel B analog power supply analog power supply SPI clock/data format select SPI data input/output/output data standard SPI chip select, active LOW control mode select regulator decoupling node; channel B out-of-range; channel B data output bit 10 (Most Significant Bit (MSB)); channel B data output bit 9; channel B data output bit 8; channel B data output bit 7; channel B data output bit 6; channel B data output bit 5; channel B output power supply output power supply data output bit 4; channel B data output bit 3; channel B data output bit 2; channel B data output bit 1; channel B data output bit 0 (Least Significant Bit (LSB)); channel B not connected not connected not connected not connected data valid output clock not connected not connected not connected data output bit 0 (LSB); channel A data output bit 1; channel A data output bit 2; channel A output power supply output power supply data output bit 3; channel A data output bit 4; channel A data output bit 5; channel A data output bit 6; channel A data output bit 7; channel A data output bit 8; channel A
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Table 2. Symbol VCMB AGND INBM INBP VDDA VDDA SCLK/DFS SDIO/ODS CS CTRL DECB OTRB DB10 DB9 DB8 DB7 DB6 DB5 VDDO VDDO DB4 DB3 DB2 DB1 DB0 n.c. n.c. n.c. n.c. DAV n.c. n.c. n.c. DA0 DA1 DA2 VDDO VDDO DA3 DA4 DA5 DA6 DA7 DA8
ADC1112D125
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
Pin description (CMOS digital outputs) …continued Pin 57 58 59 60 61 62 63 64 Type [1] O O O O P I I/O P Description data output bit 9; channel A data output bit 10 (MSB); channel A out-of-range; channel A regulator decoupling node; channel A analog power supply reference programming pin voltage reference input/output analog power supply
Table 2. Symbol DA9 DA10 OTRA DECA VDDA SENSE VREF VDDA
[1]
P: power supply; G: ground; I: input; O: output; I/O: input/output.
6.2 LVDS DDR outputs selected
6.2.1 Pinning
58 DA9_DA10_M 57 DA9_DA10_P
56 DA7_DA8_M
54 DA5_DA6_M
52 DA3_DA4_M
55 DA7_DA8_P
53 DA5_DA6_P
51 DA3_DA4_P
62 SENSE
50 VDDO
terminal 1 index area INAP INAM AGND VCMA REFAT REFAB AGND CLKP CLKM 1 2 3 4 5 6 7 8 9
49 VDDO 48 DA1_DA2_M 47 DA1_DA2_P 46 LOW_DA0_M 45 LOW_DA0_P 44 n.c. 43 n.c. 42 DAVP 41 DAVM 40 n.c. 39 n.c. 38 LOW_DB0_P 37 LOW_DB0_M 36 DB1_DB2_P 35 DB1_DB2_M 34 DB3_DB4_P 33 DB3_DB4_M VDDO 32
005aaa163
64 VDDA
61 VDDA
60 DECA CS 21
AGND 10 REFBB 11 REFBT 12 VCMB 13 AGND 14 INBM 15 INBP 16 VDDA 17 VDDA 18 SCLK/DFS 19 SDIO/ODS 20 CTRL 22 DECB 23 OTRB 24 DB9_DB10_M 25 DB9_DB10_P 26 DB7_DB8_M 27 DB7_DB8_P 28 DB5_DB6_M 29 DB5_DB6_P 30 VDDO 31
Fig 3.
Pin configuration with LVDS DDR digital outputs selected
ADC1112D125
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59 OTRA
63 VREF
ADC1112D125 HVQFN64
Transparent top view
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Product data sheet
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
6.2.2 Pin description
Table 3. Symbol DB9_DB10_M DB9_DB10_P DB7_DB8_M DB7_DB8_P DB5_DB6_M DB5_DB6_P DB3_DB4_M DB3_DB4_P DB1_DB2_M DB1_DB2_P LOW_DB0_M LOW_DB0_P n.c. n.c. DAVM DAVP n.c. n.c. LOW_DA0_P LOW_DA0_M DA1_DA2_P DA1_DA2_M DA3_DA4_P DA3_DA4_M DA5_DA6_P DA5_DA6_M DA7_DA8_P DA7_DA8_M DA9_DA10_P DA9_DA10_M
[1] [2]
Pin description (LVDS DDR) digital outputs) [1] Pin 25 26 27 28 29 30 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 51 52 53 54 55 56 57 58 Type [2] O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O Description differential output data DB9 and DB10 multiplexed, complement differential output data DB9 and DB10 multiplexed, true differential output data DB7and DB8 multiplexed, complement differential output data DB7 and DB8 multiplexed, true differential output data DB5 and DB6 multiplexed, complement differential output data DB5 and DB6 multiplexed, true differential output data DB3 and DB4 multiplexed, complement differential output data DB3 and DB4 multiplexed, true differential output data DB1 and DB2 multiplexed, complement differential output data DB1 and DB2 multiplexed, true differential output data DB0 multiplexed, complement differential output data DB0 multiplexed, true not connected not connected data valid output clock, complement data valid output clock, true not connected not connected differential output data DA0 multiplexed, true differential output data DA0 multiplexed, complement differential output data DA1 and DA2 multiplexed, true differential output data DA1 and DA2 multiplexed, complement differential output data DA3 and DA4 multiplexed, true differential output data DA3 and DA4 multiplexed, complement differential output data DA5 and DA6 multiplexed, true differential output data DA5 and DA6 multiplexed, complement differential output data DA7 and DA8 multiplexed, true differential output data DA7 and DA8 multiplexed, complement differential output data DA9 and DA10 multiplexed, true differential output data DA9 and DA10 multiplexed, complement
Pins 1 to 24, pin 59 to 64 and pins 31, 32, 49 and 50 are the same for both CMOS and LVDS DDR outputs (see Table 2). P: power supply; G: ground; I: input; O: output; I/O: input/output.
ADC1112D125
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Product data sheet
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VO output voltage Conditions pins DA10 to DA0 and DB10 to DB0 or pins DA9_DA10_P to LOW_DA0_P, DA9_DA10_M to LOW_DA0_M, DB9_DB10_P to LOW_DB0_P and DB9_DB10_M to LOW_DB0_M Min −0.4 Max +3.9 Unit V
VDDA VDDO Tstg Tamb Tj
analog supply voltage output supply voltage storage temperature ambient temperature junction temperature
−0.4 −0.4 −55 −40 -
+3.9 +3.9 +125 +85 125
V V °C °C °C
8. Thermal characteristics
Table 5. Symbol Rth(j-a) Rth(j-c)
[1]
Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to case Conditions
[1] [1]
Typ 15.6 6.3
Unit K/W K/W
Value for six layers board in still air with a minimum of 64 thermal vias.
9. Static characteristics
Table 6. Symbol Supplies VDDA VDDO IDDA IDDO analog supply voltage output supply voltage analog supply current output supply current CMOS mode LVDS DDR mode fclk = 125 Msps; fi = 70 MHz CMOS mode; fclk = 125 Msps; fi = 70 MHz LVDS DDR mode: fclk = 125 Msps; fi = 70 MHz P power dissipation ADC1112D125; analog supply only Power-down mode Sleep mode 2.85 1.65 2.85 3.0 1.8 3.0 400 16 82 1230 24 80 3.4 3.6 3.6 V V V mA mA mA mW mW mW Static characteristics[1] Parameter Conditions Min Typ Max Unit
ADC1112D125
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
Table 6. Symbol
Static characteristics[1] …continued Parameter Conditions Min Typ Max Unit
Clock inputs: pins CLKP and CLKM Low-Voltage Positive Emitter-Coupled Logic (LVPECL) Vi(clk)dif Sine Vi(clk)dif VIL VIH VIL differential clock input voltage LOW-level input voltage HIGH-level input voltage LOW-level input voltage LOW-medium level medium-HIGH level VIH IIL IIH VIL VIH IIL IIH CI HIGH-level input voltage LOW-level input current HIGH-level input current LOW-level input voltage HIGH-level input voltage LOW-level input current HIGH-level input current input capacitance peak-to-peak ±0.8 0.7VDDA −10 −10 0 0.7VDDA −10 −50 ±3.0 0 0.3VDDA 0.6VDDA VDDA 4 V Low Voltage Complementary Metal Oxide Semiconductor (LVCMOS) 0.3VDDA V +10 +10 V V V V V μA μA differential clock input voltage peak-to-peak ±1.6 V
Logic input: pin CTRL
Serial peripheral interface: pins CS, SDIO/ODS, SCLK/DFS 0.3VDDA V VDDA +10 +50 V μA μA pF
Digital outputs, CMOS mode: pins DA10 to DA0, DB10 to DB0, OTRA, OTRB and DAV Output levels, VDDO = 3 V VOL VOH CO VOL VOH LOW-level output voltage HIGH-level output voltage output capacitance LOW-level output voltage HIGH-level output voltage high impedance; see Table 10 AGND 0.8VDDO AGND 0.8VDDO 3 0.2VDDO V VDDO V pF
Output levels, VDDO = 1.8 V 0.2VDDO V VDDO V
Digital outputs, LVDS DDR mode: pins DA9_DA10_P to LOW_DA0_P, DA9_DA10_M to LOW_DA0_M, DB9_DB10_P to LOW_DB0_P, DB9_DB10_M to LOW_DB0_M, DAVP and DAVM Output levels, VDDO = 3 V only, RL = 100 Ω VO(offset) VO(dif) CO II RI CI VI(cm)
ADC1112D125
output offset voltage differential output voltage output capacitance input current input resistance input capacitance common-mode input voltage
output buffer current set to 3.5 mA output buffer current set to 3.5 mA
−5 -
1.2 350 3 19.8 2.8 1.5
+5 2
V mV pF μA kΩ pF V
8 of 41
Analog inputs: pins INAP, INAM, INBP and INBM
VINAP = VINAM; VINBP = VINBM
Rev. 2 — 3 March 2011
0.9
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Product data sheet
NXP Semiconductors
ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
Table 6. Symbol Bi VI(dif) VO(cm) IO(cm) VVREF Accuracy INL DNL Eoffset EG MG(CTC) Supply PSRR
[1]
Static characteristics[1] …continued Parameter input bandwidth differential input voltage common-mode output voltage common-mode output current voltage on pin VREF output input integral non-linearity differential non-linearity offset error gain error channel-to-channel gain matching power supply rejection ratio 200 mV (p-p) on VDDA; fi = DC full-scale guaranteed no missing codes peak-to-peak Conditions Min 1 0.5 −0.6 −0.2 Typ 600 0.5VDDA 4 0.5 to 1 ±0.12 ±0.06 ±2 ±0.5 1.1 Max 2 1 +0.6 +0.2 Unit MHz V V mA V V LSB LSB mV % %
Common-mode output voltage: pins VCMA and VCMB
I/O reference voltage: pin VREF
-
−37
-
dB
Typical values measured at VDDA = 3 V, VDDO = 1.8 V, Tamb = 25 °C; minimum and maximum values are across the full temperature range Tamb = −40 °C to +85 °C at VDDA = 3 V, VDDO = 1.8 V; VINAP − VINAM = −1 dBFS; VINBP − VINBM = −1 dBFS; internal reference mode; applied to CMOS and LVDS interface; unless otherwise specified.
ADC1112D125
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Product data sheet
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
10. Dynamic characteristics
10.1 Dynamic characteristics
Table 7. Symbol α2H Dynamic characteristics[1] Parameter second harmonic level Conditions fi = 3 MHz fi = 30 MHz fi = 70 MHz fi = 170 MHz α3H third harmonic level fi = 3 MHz fi = 30 MHz fi = 70 MHz fi = 170 MHz THD total harmonic distortion fi = 3 MHz fi = 30 MHz fi = 70 MHz fi = 170 MHz ENOB effective number of bits fi = 3 MHz fi = 30 MHz fi = 70 MHz fi = 170 MHz SNR signal-to-noise ratio fi = 3 MHz fi = 30 MHz fi = 70 MHz fi = 170 MHz SFDR spurious-free dynamic range fi = 3 MHz fi = 30 MHz fi = 70 MHz fi = 170 MHz IMD Intermodulation distortion fi = 3 MHz fi = 30 MHz fi = 70 MHz fi = 170 MHz αct(ch)
[1]
Min -
Typ 88 87 85 83 87 86 84 82 84 83 81 79 10.7 10.7 10.7 10.6 66.2 66.2 66.0 65.8 87 86 84 82 89 88 86 84 100
Max -
Unit dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc bits bits bits bits dBFS dBFS dBFS dBFS dBc dBc dBc dBc dBc dBc dBc dBc dBc
Analog signal processing
channel crosstalk
fi = 70 MHz
Typical values measured at VDDA = 3 V, VDDO = 1.8 V, Tamb = 25 °C; minimum and maximum values are across the full temperature range Tamb = −40 °C to +85 °C at VDDA = 3 V, VDDO = 1.8 V; VINAP − VINAM = −1 dBFS; VINBP − VINBM = −1 dBFS; internal reference mode; applied to CMOS and LVDS interface; unless otherwise specified.
ADC1112D125
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Product data sheet
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
10.2 Clock and digital output timing
Table 8. Symbol fclk tlat(data) δclk td(s) twake tPD tsu th tr tf Clock and digital output timing characteristics[1] Parameter clock frequency data latency time clock duty cycle sampling delay time wake-up time propagation delay set-up time hold time rise time fall time DATA DAV DATA
[2] [2]
Conditions
Min 100 -
Typ 14 50 50 0.8 76 3.9 4.2 5.7 1.4 -
Max 125 70 55 2.4 2.4 2.4
Unit MHz clock cycles % % ns μs ns ns ns ns ns ns ns
Clock timing input: pins CLKP and CLKM
DCS_EN = 1 DCS_EN = 0
30 45 -
CMOS mode timing: pins DA10 to DA0, DB10 to DB0 and DAV DATA DAV 0.5 0.5 0.5
LVDS DDR mode timing: pins DA9_DA10_P to LOW_DA0_P, DA9_DA10 M to LOW_DA0_M, DB9_DB10_P to LOW_DB0_P, DB9_DB10_M to LOW_DB0_M, DAVP and DAVM tPD tsu th tr tf propagation delay set-up time hold time rise time fall time DATA DAV DATA DAV
[1]
[3] [3]
DATA DAV
50 50 50 50
3.9 4.2 1.4 2.0 100 100 100 100
200 200 200 200
ns ns ns ns ps ps ps ps
Typical values measured at VDDA = 3 V, VDDO = 1.8 V, Tamb = 25 °C; minimum and maximum values are across the full temperature range Tamb = −40 °C to +85 °C at VDDA = 3 V, VDDO = 1.8 V; VINAP − VINAM = −1 dBFS; VINBP − VINBM = −1 dBFS; unless otherwise specified. Measured between 20 % to 80 % of VDDO. Rise time measured from −50 mV to +50 mV; fall time measured from +50 mV to −50 mV.
[2] [3]
ADC1112D125
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Product data sheet
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
N
N+1
td(s) N+2 tclk CLKP CLKM tPD (N − 14) (N − 13) (N − 12) (N − 11)
DATA tPD
tsu DAV
th
tclk
005aaa060
tclk = 1 / fclk
Fig 4.
CMOS mode timing
N
N+1
td(s) N+2
tclk CLKP
CLKM tPD DAx_DAx + 1_P/ DBx_DBx + 1_P DAx_DAx + 1_M/ DBx_DBx + 1_M (N − 14) (N − 13) (N − 12) (N − 11)
DAx/ DBx
DAx+1/ DBx+1
DAx/ DBx tsu th
DAx+1/ DBx+1 tsu th
DAx/ DBx
DAx+1/ DBx+1
DAx/ DBx
DAx+1/ DBx+1
DAx/ DBx
DAx+1/ DBx+1
tPD
DAVP
DAVM tclk
005aaa114
tclk = 1 / fclk
Fig 5.
LVDS DDR mode timing
ADC1112D125
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
10.3 SPI timings
Table 9. Symbol tw(SCLK) tw(SCLKH) tw(SCLKL) tsu th fclk(max)
[1]
Characteristics Parameter SCLK pulse width SCLK HIGH pulse width SCLK LOW pulse width set-up time hold time maximum clock frequency data to SCLK HIGH CS to SCLK HIGH data to SCLK HIGH CS to SCLK HIGH Conditions Min Typ 40 16 16 5 5 2 2 25 Max Unit ns ns ns ns ns ns ns MHz
SPI timings
Typical values measured at VDDA = 3 V, VDDO = 1.8 V, Tamb = 25 °C; minimum and maximum values are across the full temperature range Tamb = −40 °C to +85 °C at VDDA = 3 V, VDDO = 1.8 V.
tsu CS
tsu th
tw(SCLKL) tw(SCLK) tw(SCLKH)
th
SCLK
SDIO
R/W
W1
W0
A12
A11
D2
D1
D0
005aaa065
Fig 6.
SPI timing
ADC1112D125
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Product data sheet
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
10.4 Typical characteristics
3.2 C (pF) 3.0
001aam619
16 R (kΩ) 12
001aam614
2.8
8
2.6
4
2.4 50 150 250 350 450 550 f (MHz)
0 50 150 250 350 450 550 f (MHz)
Fig 7.
Capacitance as a function of frequency
Fig 8.
Resistance as a function of frequency
100 SFDR (dBc) 80
001aam616
80 SNR (dBFS) 60
(1)
001aam615
(1)
60
(2)
(2)
40 40
20 20
0 10 30 50 70 δ (%) 90
0 10 30 50 70 δ (%) 90
T = 25 °C; VDD = 3 V; fi = 170 MHz; fs = 125 Msps (1) DCS on (2) DCS off
T = 25 °C; VDD = 3 V; fi = 170 MHz; fs = 125 Msps (1) DCS on (2) DCS off
Fig 9.
SFDR as a function of duty cycle (δ)
Fig 10. SNR as a function of duty cycle (δ)
ADC1112D125
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
92 SFDR (dBc) 88
001aam617
80 SNR (dBFS) 60
001aam618
(1) (2)
(1) (2) (3)
(3)
84
40
80 10 30 50 70 δ (%) 90
20 10 30 50 70 δ (%) 90
(1) Tamb = −40 °C/typical supply voltages (2) Tamb = +25 °C/typical supply voltages (3) Tamb = +90 °C/typical supply voltages
(1) Tamb = −40 °C/typical supply voltages (2) Tamb = +25 °C/typical supply voltages (3) Tamb = +90 °C/typical supply voltages
Fig 11. SFDR as a function of duty cycle (δ)
Fig 12. SNR as a function of duty cycle (δ)
90 SFDR (dBc) 86
001aam659
75 SNR (dBFS) 73
001aam660
82
71
78
69
74
67
70 0 0.5 1.0 1.5 2.0 2.5 3.0 VI(cm) (V) 3.5
65 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VI(cm) (V)
Fig 13. SFDR as a function of common-mode input voltage (VI(cm))
Fig 14. SNR as a function of common-mode input voltage (VI(cm))
ADC1112D125
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Product data sheet
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
11. Application information
11.1 Device control
The ADC1112D125 can be controlled via the Serial Peripheral Interface (SPI control mode) or directly via the I/O pins (Pin control mode).
11.1.1 SPI and Pin control modes
The device enters Pin control mode at power-up and remains in this mode as long as pin CS is held HIGH. In Pin control mode, the SPI pins SDIO, CS and SCLK are used as static control pins. SPI control mode is enabled by forcing pin CS LOW. Once SPI control mode has been enabled, the device remains in this mode. The transition from Pin control mode to SPI control mode is illustrated in Figure 15.
CS
Pin control mode Data format offset binary
SPI control mode
SCLK/DFS
Data format two's complement LVDS DDR
SDIO/ODS
CMOS
R/W
W1
W0
A12
005aaa039
Fig 15. Control mode selection
When the device enters SPI control mode, the output data standard and data format are determined by the level on pin SDIO as soon as a transition is triggered by a falling edge on CS.
11.1.2 Operating mode selection
The active ADC1112D125 operating mode (Power-up, Power-down or Sleep) can be selected via the SPI interface (see Table 21) or by using pin CTRL in Pin control mode.
Table 10. Pin CTRL 0 0.3VDDA 0.6VDDA VDDA Operating mode selection via pin CTRL Operating mode Power-down Sleep Power-up Power-up Output high-Z yes yes yes no
11.1.3 Selecting the output data standard
The output data standard (CMOS or LVDS DDR) can be selected via the SPI interface (see Table 24) or by using pin ODS in Pin control mode. LVDS DDR is selected when ODS is HIGH, otherwise CMOS is selected.
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11.1.4 Selecting the output data format
The output data format can be selected via the SPI interface (offset binary, two’s complement or gray code; see Table 24) or by using pin DFS in Pin control mode (offset binary or two’s complement). Offset binary is selected when DFS is LOW. When DFS is HIGH, two’s complement is selected.
11.2 Analog inputs
11.2.1 Input stage
The analog input of the ADC1112D125 supports a differential or a single-ended input drive. Optimal performance is achieved using differential inputs with the common-mode input voltage (VI(cm)) on pins INAP, INAM, INBP and INBM set to 0.5VDDA. The full-scale analog input voltage range is configurable between 1 V (p-p) and 2 V (p-p) via a programmable internal reference (see Section 11.3 and Table 23). The equivalent circuit of the sample-and-hold input stage, including ElectroStatic Discharge (ESD) protection and circuit and package parasitics, is shown in Figure 16.
Package
ESD
Parasitics
Switch
Ron = 14 Ω 4 pF
INAP/INBP internal clock Sampling capacitor
Ron = 14 Ω
Switch
4 pF
INAM/INBM internal clock Sampling capacitor
005aaa092
Fig 16. Input sampling circuit
The sample phase occurs when the internal clock (derived from the clock signal on pin CLKP/CLKM) is HIGH. The voltage is then held on the sampling capacitors. When the clock signal goes LOW, the stage enters the hold phase and the voltage information is transmitted to the ADC core.
11.2.2 Anti-kickback circuitry
Anti-kickback circuitry (RC filter in Figure 17 is needed to counteract the effects of charge injection generated by the sampling capacitance. The RC-filter is also used to filter noise from the signal before it reaches the sampling stage. The value of the capacitor should be chosen to maximize noise attenuation without degrading the settling time excessively.
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Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
R
INAP/ INBP
C R
INAM/ INBM
001aan679
Fig 17. Anti-kickback circuit
The component values are determined by the input frequency and should be selected so as not to affect the input bandwidth.
Table 11. RC coupling versus input frequency, typical values R (Ω) 25 12 12 C (pF) 12 8 8 3 70 170
Input frequency (MHz)
11.2.3 Transformer
The configuration of the transformer circuit is determined by the input frequency. The configuration shown in Figure 18 would be suitable for a baseband application.
ADT1-1WT
100 nF
Analog input
100 nF 25 Ω
25 Ω
INAP/INBP
12 pF 100 nF 25 Ω 25 Ω
100 nF
INAM/INBM VCMA/VCMB
100 nF
100 nF
005aaa094
Fig 18. Single transformer configuration suitable for baseband applications
The configuration shown in Figure 19 is recommended for high frequency applications. In both cases, the choice of transformer is a compromise between cost and performance.
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ADT1-1WT
100 nF 50 Ω
ADT1-1WT
50 Ω
12 Ω
INAP/INBP
Analog input
8.2 pF 50 Ω 50 Ω 12 Ω
INAM/INBM VCMA/VCMB
100 nF
100 nF
100 nF
005aaa095
Fig 19. Dual transformer configuration suitable for high intermediate frequency application
11.3 System reference and power management
11.3.1 Internal/external references
The ADC1112D125 has a stable and accurate built-in internal reference voltage to adjust the ADC full-scale. This reference voltage can be set internally via SPI or with pins VREF and SENSE (programmable in 1 dB steps between 0 dB and −6 dB via control bits INTREF[2:0] when bit INTREF_EN = logic 1; see Table 23). See Figure 21 to Figure 24. The equivalent reference circuit is shown in Figure 20. An external reference is also possible by providing a voltage on pin VREF as described in Figure 23.
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REFAT/ REFBT REFERENCE AMP REFAB/ REFBB
VREF
EXT_ref
BUFFER
EXT_ref
BANDGAP REFERENCE
ADC CORE SENSE SELECTION LOGIC
001aan670
Fig 20. Reference equivalent schematic
If bit INTREF_EN is set to logic 0, the reference voltage is determined either internally or externally as detailed in Table 12.
Table 12. Selection Internal (Figure 21) Internal (Figure 22) External (Figure 23) Internal via SPI (Figure 24)
[1]
Reference selection SPI bit INTREF_EN 0 0 0 1 SENSE pin AGND VREF pin 330 pF capacitor to AGND Full-scale (V (p-p)) 2V 1V 1 V to 2 V 1 V to 2 V
pin VREF connected to pin SENSE and via a 330 pF capacitor to AGND VDDA external voltage between 0.5 V and 1 V[1]
pin VREF connected to pin SENSE and via 330 pF capacitor to AGND
The voltage on pin VREF is doubled internally to generate the internal reference voltage.
Figure 21 to Figure 24 illustrate how to connect the SENSE and VREF pins to select the required reference voltage source.
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VREF
330 pF
VREF
330 pF
REFERENCE EQUIVALENT SCHEMATIC
REFERENCE EQUIVALENT SCHEMATIC SENSE
SENSE
005aaa116
005aaa117
Fig 21. Internal reference, 2 V (p-p) full-scale
Fig 22. Internal reference, 1 V (p-p) full-scale
VREF
0.1 μF
VREF
V
330 pF
REFERENCE EQUIVALENT SCHEMATIC SENSE
REFERENCE EQUIVALENT SCHEMATIC
SENSE
VDDA
005aaa119
005aaa118
Fig 23. External reference, 1 V (p-p) to 2 V (p-p) full-scale
Fig 24. Internal reference via SPI, 1 V (p-p) to 2 V (p-p) full-scale
11.3.2 Programmable full-scale
The full-scale is programmable between 1 V (p-p) to 2 V (p-p) (see Table 13).
Table 13. INTREF 000 001 010 011 100 101 110 111 Programmable full-scale Level (dB) 0 −1 −2 −3 −4 −5 −6 reserved Full-scale (V (p-p)) 2 1.78 1.59 1.42 1.26 1.12 1 x
11.3.3 Common-mode output voltage (VO(cm))
A 0.1 μF filter capacitor should be connected between pin VCMA/VCMB and ground to ensure a low-noise common-mode output voltage. When AC-coupled, pin VCMA/VCMB can then be used to set the common-mode reference for the analog inputs, for instance via a transformer middle point.
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Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
Package
ESD
Parasitics COMMON MODE REFERENCE
VCMA/VCMB 1.5 V
0.1 μF
ADC CORE
005aaa099
Fig 25. Equivalent schematic of the common-mode reference circuit
11.3.4 Biasing
The common-mode input voltage (VI(cm)) on pins INAP/INBP and INAM/INBM should be set externally to 0.5VDDA for optimal performance and should always be between 0.9 V and 2 V (see Table 6).
11.4 Clock input
11.4.1 Drive modes
The ADC1112D125 can be driven differentially (LVPECL). It can also be driven by a single-ended LVCMOS signal connected to pin CLKP (pin CLKM should be connected to ground via a capacitor) or pin CLKM (pin CLKP should be connected to ground via a capacitor).
LVCMOS clock input
CLKP CLKP CLKM LVCMOS clock input CLKM
005aaa174
005aaa053
a. Rising edge LVCMOS Fig 26. LVCMOS single-ended clock input
b. Falling edge LVCMOS
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CLKP Sine clock input
Sine clock input
CLKP
CLKM
CLKM
005aaa173
005aaa054
a. Sine clock input
b. Sine clock input (with transformer)
CLKP LVPECL clock input
CLKM
005aaa172
c. LVPECL clock input Fig 27. Differential clock input
11.4.2 Equivalent input circuit
The equivalent circuit of the input clock buffer is shown in Figure 28. The common-mode voltage of the differential input stage is set via internal 5 kΩ resistors.
Package
ESD
Parasitics
CLKP
Vcm(clk) SE_SEL SE_SEL
5 kΩ
5 kΩ
CLKM
005aaa056
Vcm(clk) = common-mode voltage of the differential input stage.
Fig 28. Equivalent input circuit
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Single-ended or differential clock inputs can be selected via the SPI interface (see Table 22). If single-ended is enabled, the input pin (CLKM or CLKP) is selected via control bit SE_SEL. If single-ended is implemented without setting bit SE_SEL to the appropriate value, the unused pin should be connected to ground via a capacitor.
11.4.3 Duty cycle stabilizer
The duty cycle stabilizer can improve the overall performance of the ADC by compensating the duty cycle of the input clock signal. When the duty cycle stabilizer is active (bit DCS_EN = logic 1; see Table 22), the circuit can handle signals with duty cycles of between 30 % and 70 % (typical). When the duty cycle stabilizer is disabled (DCS_EN = logic 0), the input clock signal should have a duty cycle of between 45 % and 55 %.
11.4.4 Clock input divider
The ADC1112D125 contains an input clock divider that divides the incoming clock by a factor of 2 (when bit CLKDIV = logic 1; see Table 22). This feature allows the user to deliver a higher clock frequency with better jitter performance, leading to a better SNR result once acquisition has been performed.
11.5 Digital outputs
11.5.1 Digital output buffers: CMOS mode
The digital output buffers can be configured as CMOS by setting bit LVDS_CMOS to logic 0 (see Table 24). Each digital output has a dedicated output buffer. The equivalent circuit of the CMOS digital output buffer is shown in Figure 29. The buffer is powered by a separate AGND/VDDO to ensure 1.8 V to 3.3 V compatibility and is isolated from the ADC core. Each buffer can be loaded by a maximum of 10 pF.
VDDO Parasitics ESD Package
LOGIC DRIVER
50 Ω
Dx
AGND
005aaa057
Fig 29. CMOS digital output buffer
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The output resistance is 50 Ω and is the combination of an internal resistor and the equivalent output resistance of the buffer. There is no need for an external damping resistor. The drive strength of both DATA and DAV buffers can be programmed via the SPI in order to adjust the rise and fall times of the output digital signals (see Table 31).
11.5.2 Digital output buffers: LVDS DDR mode
The digital output buffers can be configured as LVDS DDR by setting bit LVDS_CMOS to logic 1 (see Table 24).
VDDO 3.5 mA typical + DAn_DAn + 1_P; DBn_DBn + 1_P
100 Ω
RECEIVER
DAn_DAn + 1_M; DBn_DBn + 1_M + AGND
005aaa112
Fig 30. LVDS DDR digital output buffer - externally terminated
Each output should be terminated externally with a 100 Ω resistor (typical) at the receiver side (Figure 30) or internally via SPI control bits LVDS_INT_TER[2:0] (see Figure 31 and Table 33).
VDDO 3.5 mA typical + DAn_DAn + 1_P; DBn_DBn + 1_P
100 Ω
100 Ω
RECEIVER
DAn_DAn + 1_M; DBn_DBn + 1_M + AGND
005aaa113
Fig 31. LVDS DDR digital output buffer - internally terminated
The default LVDS DDR output buffer current is set to 3.5 mA. It can be programmed via the SPI (bits DAVI[1:0] and DATAI[1:0]; see Table 32) in order to adjust the output logic voltage levels.
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LVDS DDR output register 2 Resistor value (Ω) no internal termination 300 180 110 150 100 81 60
Table 14. 000 001 010 011 100 101 110 111
LVDS_INT_TER[2:0]
11.5.3 DAta Valid (DAV) output clock
A data valid output clock signal (DAV) is provided that can be used to capture the data delivered by the ADC1112D125. Detailed timing diagrams for CMOS and LVDS DDR modes are provided in Figure 4 and Figure 5 respectively. In LVDS DDR mode, it is highly recommended to shift ahead the DAV by 1 ns (bits DAVPHASE[2:0] = 0b100; see Table 25).
11.5.4 OuT-of-Range (OTR)
An out-of-range signal is provided on pin OTRA for ADC channel A and on pin OTRB for ADC channel B. The latency of OTRA/OTRB is fourteen clock cycles. The OTR response can be speeded up by enabling Fast OTR (bit FASTOTR = logic 1; see Table 30). In this mode, the latency of OTRA/OTRB is reduced to only four clock cycles (per ADC channel). The Fast OTR detection threshold (below full-scale) can be programmed via bits FASTOTR_DET[2:0].
Table 15. 000 001 010 011 100 101 110 111 Fast OTR register Detection level (dB) −20.56 −16.12 −11.02 −7.82 −5.49 −3.66 −2.14 −0.86
FASTOTR_DET[2:0]
11.5.5 Digital offset
By default, the ADC1112D125 delivers output code that corresponds to the analog input. However, it is possible to add a digital offset to the output code via the SPI (bits DIG_OFFSET[5:0]; see Table 26).
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11.5.6 Test patterns
For test purposes, the ADC1112D125 can be configured to transmit one of a number of predefined test patterns (via bits TESTPAT_SEL[2:0]; see Table 27). A custom test pattern can be defined by the user (TESTPAT_USER[10:3]; see Table 28 and TESTPAT_USER[2:0]; see Table 29) and is selected when TESTPAT_SEL[2:0] = 101. The selected test pattern is transmitted regardless of the analog input.
11.5.7 Output codes versus input voltage
Table 16. < −1 −1.0000000 −0.9990234 −0.9980469 −0.9970703 −0.996093 .... −0.0019531 −0.0009766 0.0000000 +0.0009766 +0.0019531 .... +0.9960938 +0.9970703 +0.9980469 +0.9990234 +1.0000000 > +1 Output codes Offset binary 000 0000 0000 000 0000 0000 000 0000 0001 000 0000 0010 000 0000 0011 000 0000 0100 .... 011 1111 1110 011 1111 1111 100 0000 0000 100 0000 0001 100 0000 0010 .... 111 1111 1011 111 1111 1100 111 1111 1101 111 1111 1110 111 1111 1111 111 1111 1111 Two’s complement 100 0000 0000 100 0000 0000 100 0000 0001 100 0000 0010 100 0000 0011 100 0000 0100 .... 111 1111 1110 111 1111 1111 000 0000 0000 000 0000 0001 000 0000 0010 .... 011 1111 1011 011 1111 1100 011 1111 1101 011 1111 1110 011 1111 1111 011 1111 1111 OTRA/OTRB pin 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 VINAP − VINAM/VINBP − VINBM
11.6 Serial Peripheral Interface (SPI)
11.6.1 Register description
The ADC1112D125 serial interface is a synchronous serial communications port that allows easy interfacing with many commonly used microprocessors. It provides access to the registers that control the operation of the chip. This interface is configured as a 3-wire type (SDIO as bidirectional pin) Pin SCLK is the serial clock input and pin CS acts as the serial chip select. Each read/write operation is initiated by a LOW level on CS. A minimum of three bytes is transmitted (two instruction bytes and at least one data byte). The number of data bytes is determined by the value of bits W1 and W2 (see Table 18).
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Instruction bytes for the SPI MSB LSB 6 W1[2] A6 5 W0[2] A5 4 A12 A4 3 A11 A3 2 A10 A2 1 A9 A1 0 A8 A0 7 R/W[1] A7
Table 17. Bit Description
[1] [2]
Bit R/W indicates whether it is a read (logic 1) or a write (logic 0) operation. Bits W1 and W0 indicate the number of bytes to be transferred (see Table 18).
Table 18. W1 0 0 1 1
Number of data bytes to be transferred after the instruction bytes W0 0 1 0 1 Number of bytes transferred 1 byte 2 bytes 3 bytes 4 bytes or more
Bits A12 to A0 indicate the address of the register being accessed. In the case of a multiple byte transfer, this address is the first register to be accessed. An address counter is increased to access subsequent addresses. The steps involved in a data transfer are as follows: 1. A falling edge on pin CS in combination with a rising edge on pin SCLK determine the start of communications. 2. The first phase is the transfer of the 2-byte instruction. 3. The second phase is the transfer of the data which can vary in length but is always a multiple of 8 bits. The MSB is always sent first (for instruction and data bytes). 4. A rising edge on pin CS indicates the end of data transmission.
CS
SCLK
SDIO
R/W
W1
W0
A12 A11 A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
D7
D6
D5
D4
D3
D2
D1
D0
D7
D6
D5
D4
D3
D2
D1
D0
Instruction bytes
Register N (data)
Register N + 1 (data)
005aaa086
Fig 32. SPI mode timing
11.6.2 Default modes at start-up
During circuit initialization it does not matter which output data standard has been selected. At power-up, the device enters Pin control mode. A falling edge on pin CS triggers a transition to SPI control mode. When the ADC1112D125 enters SPI control mode, the output data standard (CMOS/LVDS DDR) is determined by the level on pin SDIO (see Figure 33). Once in SPI control mode, the output data standard can be changed via bit LVDS_CMOS (see Table 24).
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When the ADC1112D125 enters SPI control mode, the output data format (two’s complement or offset binary) is determined by the level on pin SCLK (gray code can only be selected via the SPI). Once in SPI control mode, the output data format can be changed via bit DATA_FORMAT[1:0] (see Table 24).
CS
SCLK (Data format)
SDIO (CMOS LVDS DDR) Offset binary, LVDS DDR default mode at start-up
005aaa063
Fig 33. Default mode at start-up: SCLK LOW = offset binary; SDIO HIGH = LVDS DDR
CS
SCLK (Data format)
SDIO (CMOS LVDS DDR)
two's complement, CMOS default mode at start-up
005aaa064
Fig 34. Default mode at start-up: SCLK HIGH = two’s complement; SDIO LOW = CMOS
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11.6.3 Register allocation map
Table 19. Register allocation map Access Bit 7 R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W TESTPAT_USER[2:0] RESERVED DAVI[1:0] BIT_BYTE_WISE SW_ RST Bit 6 Bit 5 Bit 4 RESERVED[5:0] RESERVED[2:0] SE_SEL LVDS_ CMOS DIFF_SE INTREF_EN OUTBUF DAVINV DIG_OFFSET[5:0] TESTPAT_USER[10:3] FASTOTR DAV_DRV[1:0] RESERVED FASTOTR_DET[2:0] DATA_DRV[1:0] DATAI[1:0] LVDS_INT_TER[2:0] TESTPAT_SEL[2:0] RESERVED OUTBUS_SWAP Bit definition Bit 3 Bit 2 Bit 1 ADCB Bit 0 ADCA Default (bin) 1111 1111 0000 0000 Address Register name (hex) 0003 0005 0006 0008 0011 0012 0013 0014 0015 0016 0017 0020 0021 0022 Channel index Reset and operating mode Clock Output data standard. Output clock Offset Test pattern 1 Test pattern 2 Test pattern 3 Fast OTR CMOS output
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OP_MODE[1:0] CLKDIV INTREF[2:0] DATA_FORMAT[1:0]
DCS_EN 0000 0001 0000 0000 0000 0000 0000 1110 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000
Internal reference R/W
DAVPHASE[2:0]
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
0000 1110 0000 0000 0000 0000
LVDS DDR O/P 1 R/W LVDS DDR O/P 2 R/W
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ADC1112D125
Dual 11-bit ADC: CMOS or LVDS DDR digital outputs
Table 20. Channel index control register (address 0003h) bit description Default values are highlighted. Bit 7 to 2 1 Symbol RESERVED[5:0] ADCB Access R/W 0 1 0 ADCA R/W 0 1 Value 111111 Description reserved next SPI command for ADC B ADC B not selected ADC B selected next SPI command for ADC A ADC A not selected ADC A selected
Table 21. Reset and operating mode control register (address 0005h) bit description Default values are highlighted. Bit 7 Symbol SW_RST Access R/W 0 1 6 to 4 3 to 2 1 to 0 RESERVED[2:0] OP_MODE[1:0] R/W 00 01 10 11 Table 22. Clock control register (address 0006h) bit description Default values are highlighted. Bit 7 to 5 4 Symbol SE_SEL Access R/W 0 1 3 DIFF_SE R/W 0 1 2 1 RESERVED CLKDIV R/W 0 1 0 DCS_EN R/W 0 1 0 Value 000 Description not used single-ended clock input pin select CLKM CLKP differential/single-ended clock input select fully differential single-ended reserved clock input divide by 2 disabled enabled duty cycle stabilizer disabled enabled 000 00 Value Description reset digital section no reset performs a reset on SPI registers reserved not used operating mode normal (Power-up) Power-down Sleep normal (Power-up)
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Table 23. Internal reference control register (address 0008h) bit description Default values are highlighted. Bit 7 to 4 3 Symbol INTREF_EN Access R/W 0 1 2 to 0 INTREF[2:0] R/W 000 001 010 011 100 101 110 111 Value 0000 Description not used programmable internal reference enable disabled active programmable internal reference 0 dB (FS = 2 V) −1 dB (FS = 1.78 V) −2 dB (FS = 1.59 V) −3 dB (FS = 1.42 V) −4 dB (FS = 1.26 V) −5 dB (FS = 1.12 V) −6 dB (FS = 1 V) reserved
Table 24. Output data standard control register (address 0011h) bit description Default values are highlighted. Bit 7 to 5 4 Symbol LVDS_CMOS Access R/W 0 1 3 OUTBUF R/W 0 1 2 OUTBUS_SWAP R/W 0 1 1 to 0 DATA_FORMAT[1:0] R/W 00 01 10 11 Value 000 Description not used output data standard: LVDS DDR or CMOS CMOS LVDS DDR output buffers enable output enabled output disabled (high-Z) output bus swap no swapping output bus is swapped (MSB becomes LSB and vice versa) output data format offset binary two’s complement gray code offset binary
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Table 25. Output clock register (address 0012h) bit description Default values are highlighted. Bit 7 to 4 3 Symbol DAVINV Access R/W 0 1 2 to 0 DAVPHASE[2:0] R/W 000 001 010 011 100 101 110 111
[1] tclk = 1 / fclk
Value 0000
Description not used output clock data valid (DAV) polarity normal inverted DAV phase select output clock shifted (ahead) by 6/16 × tclk[1] output clock shifted (ahead) by 5/16 × tclk[1] output clock shifted (ahead) by 4/16 × tclk[1] output clock shifted (ahead) by 3/16 × tclk[1] output clock shifted (ahead) by 2/16 × tclk[1] output clock shifted (ahead) by 1/16 × tclk[1] default value as defined in timing section output clock shifted (delayed) by 1/16 × tclk[1]
Table 26. Offset register (address 0013h) bit description Default values are highlighted. Bit 7 to 6 5 to 0 Symbol DIG_OFFSET[5:0] Access R/W 011111 ... 000000 ... 100000 Table 27. Test pattern 1 register (address 0014h) bit description Default values are highlighted. Bit 7 to 3 2 to 0 Symbol TESTPAT_SEL[2:0] Access R/W 000 001 010 011 100 101 110 111 Value 00000 Description not used digital test pattern select off mid scale −FS +FS toggle ‘1111..1111’/’0000..0000’ custom test pattern ‘0101..0101’ ‘1010..1010.’ Value 00 Description not used digital offset adjustment +31 LSB ... 0 ... −32 LSB
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Table 28. Test pattern 2 register (address 0015h) bit description Default values are highlighted. Bit 7 to 0 Symbol TESTPAT_USER[10:3] Access R/W Value 0000 0000 Description custom digital test pattern (bits 10 to 3)
Table 29. Test pattern 3 register (address 0016h) bit description Default values are highlighted. Bit 7 to 5 4 to 0 Symbol TESTPAT_USER[2:0] Access R/W Value 000 00000 Description custom digital test pattern (bits 2 to 0) not used
Table 30. Fast OTR register (address 0017h) bit description Default values are highlighted. Bit 7 to 4 3 Symbol FASTOTR Access R/W 0 1 2 to 0 FASTOTR_DET[2:0] R/W 000 001 010 011 100 101 110 111 Table 31. CMOS output register (address 0020h) bit description Default values are highlighted. Bit 7 to 4 3 to 2 Symbol DAV_DRV[1:] Access R/W 00 01 10 11 1 to 0 DATA_DRV[1:0] R/W 00 01 10 11 Value 00 Description not used drive strength for DAV CMOS output buffer low medium high very high drive strength for DATA CMOS output buffer low medium high very high Value 0000 Description not used fast OuT-of-Range (OTR) detection disabled enabled set fast OTR detect level −20.56 dB −16.12 dB −11.02 dB −7.82 dB −5.49 dB −3.66 dB −2.14 dB −0.86 dB
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Table 32. LVDS DDR output register 1 (address 0021h) bit description Default values are highlighted. Bit 7 to 6 5 4 to 3 Symbol RESERVED DAVI[1:0] Access R/W 00 01 10 11 2 1 to 0 RESERVED DATAI[1:0] R/W 00 01 10 11 0 Value 00 0 Description not used reserved LVDS current for DAV LVDS buffer 3.5 mA 4.5 mA 1.25 mA 2.5 mA reserved LVDS current for DATA LVDS buffer 3.5 mA 4.5 mA 1.25 mA 2.5 mA
Table 33. LVDS DDR output register 2 (address 0022h) bit description Default values are highlighted. Bit 7 to 4 3 Symbol BIT_BYTE_WISE Access R/W 0 Value 0000 Description not used DDR mode for LVDS output bit wise (even data bits output on DAV rising edge/odd data bits output on DAV falling edge) byte wise (MSB data bits output on DAV rising edge/LSB data bits output on DAV falling edge) internal termination for LVDS buffer (DAV and DATA) 000 001 010 011 100 101 110 111 no internal termination 300 Ω 180 Ω 110 Ω 150 Ω 100 Ω 81 Ω 60 Ω
1 2 to 0 LVDS_INT_TER[2:0] R/W
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12. Package outline
HVQFN64: plastic thermal enhanced very thin quad flat package; no leads; 64 terminals; body 9 x 9 x 0.85 mm
SOT804-3
D
B
A
terminal 1 index area
E
A
A1 c detail X
e1 1/2 e L 17 16 e b 32 33 v w CAB C y1 C C y
e Eh 1/2 e e2
1 terminal 1 index area 64 Dh 49
48 X
0 Dimensions Unit mm A A1 b c 0.2 D(1) 9.1 9.0 8.9 Dh 7.25 7.10 6.95 E(1) 9.1 9.0 8.9 Eh 7.25 7.10 6.95 e 0.5
2.5 scale e1 7.5 e2 7.5
5 mm
L 0.5 0.4 0.3
v 0.1
w
y
y1 0.1
max 1.00 0.05 0.30 nom 0.85 0.02 0.21 min 0.80 0.00 0.18
0.05 0.05
Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. Outline version SOT804-3 References IEC --JEDEC --JEITA --European projection
sot804-3_po
Issue date 09-02-24 10-08-06
Fig 35. Package outline SOT804-3 (HVQFN64)
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13. Abbreviations
Table 34. Acronym ADC CMOS DAV DCS DFS ESD FS IMD LSB LVCMOS LVDS DDR LVPECL MSB OTR SFDR SNR SPI TX Abbreviations Description Analog-to-Digital Converter Complementary Metal Oxide Semiconductor DAta Valid Duty Cycle Stabilizer Data Format Select ElectroStatic Discharge Full-Scale InterModulation Distortion Least Significant Bit Low Voltage Complementary Metal Oxide Semiconductor Low Voltage Differential Signalling Double Data Rate Low-Voltage Positive Emitter-Coupled Logic Most Significant Bit OuT-of-Range Spurious-Free Dynamic Range Signal-to-Noise Ratio Serial Peripheral Interface Transmitter
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14. Revision history
Table 35. Revision history Release date 20110303 Data sheet status Product data sheet Change notice Supersedes ADC1112D125 v.1 Document ID ADC1112D125 v.2 Modifications:
• • • •
Data sheet status changed from Preliminary to Product. Text and drawings updated throughout entire data sheet. Section 10.4 “Typical characteristics” has been added to the data sheet. Section 13 “Abbreviations” has been added to the data sheet. Preliminary data sheet -
ADC1112D125 v.1
20100806
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15. Legal information
15.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
© NXP B.V. 2011. All rights reserved.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
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NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond
15.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
16. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
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17. Contents
1 2 3 4 5 6 6.1 6.1.1 6.1.2 6.2 6.2.1 6.2.2 7 8 9 10 10.1 10.2 10.3 10.4 11 11.1 11.1.1 11.1.2 11.1.3 11.1.4 11.2 11.2.1 11.2.2 11.2.3 11.3 11.3.1 11.3.2 11.3.3 11.3.4 11.4 11.4.1 11.4.2 11.4.3 11.4.4 11.5 11.5.1 11.5.2 11.5.3 11.5.4 11.5.5 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 CMOS outputs selected . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 LVDS DDR outputs selected. . . . . . . . . . . . . . . 5 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 7 Thermal characteristics . . . . . . . . . . . . . . . . . . 7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 7 Dynamic characteristics . . . . . . . . . . . . . . . . . 10 Dynamic characteristics . . . . . . . . . . . . . . . . . 10 Clock and digital output timing . . . . . . . . . . . . 11 SPI timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Typical characteristics . . . . . . . . . . . . . . . . . . 14 Application information. . . . . . . . . . . . . . . . . . 16 Device control . . . . . . . . . . . . . . . . . . . . . . . . . 16 SPI and Pin control modes . . . . . . . . . . . . . . . 16 Operating mode selection. . . . . . . . . . . . . . . . 16 Selecting the output data standard . . . . . . . . . 16 Selecting the output data format. . . . . . . . . . . 17 Analog inputs . . . . . . . . . . . . . . . . . . . . . . . . . 17 Input stage . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Anti-kickback circuitry . . . . . . . . . . . . . . . . . . . 17 Transformer . . . . . . . . . . . . . . . . . . . . . . . . . . 18 System reference and power management . . 19 Internal/external references . . . . . . . . . . . . . . 19 Programmable full-scale . . . . . . . . . . . . . . . . . 21 Common-mode output voltage (VO(cm)) . . . . . 21 Biasing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Clock input . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Drive modes . . . . . . . . . . . . . . . . . . . . . . . . . 22 Equivalent input circuit . . . . . . . . . . . . . . . . . . 23 Duty cycle stabilizer . . . . . . . . . . . . . . . . . . . . 24 Clock input divider . . . . . . . . . . . . . . . . . . . . . 24 Digital outputs . . . . . . . . . . . . . . . . . . . . . . . . . 24 Digital output buffers: CMOS mode . . . . . . . . 24 Digital output buffers: LVDS DDR mode . . . . . 25 DAta Valid (DAV) output clock . . . . . . . . . . . . 26 OuT-of-Range (OTR) . . . . . . . . . . . . . . . . . . . 26 Digital offset . . . . . . . . . . . . . . . . . . . . . . . . . . 26 11.5.6 11.5.7 11.6 11.6.1 11.6.2 11.6.3 12 13 14 15 15.1 15.2 15.3 15.4 16 17 Test patterns . . . . . . . . . . . . . . . . . . . . . . . . . Output codes versus input voltage. . . . . . . . . Serial Peripheral Interface (SPI) . . . . . . . . . . Register description . . . . . . . . . . . . . . . . . . . . Default modes at start-up. . . . . . . . . . . . . . . . Register allocation map . . . . . . . . . . . . . . . . . Package outline. . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . Legal information . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 27 27 27 28 30 36 37 38 39 39 39 39 40 40 41
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
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All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 March 2011 Document identifier: ADC1112D125