AN11006

AN11006 Single stage 2.3_2.7GHz LNA with BFU730F Rev 2 — 27 October 2011 Application note Info Keywords Abstract Content BFU730F, LNA, 2.3-2.7 GHz, WiMAX, WLAN, ISM, LTE The document provides circuit, layout, BOM and performance information on 2.3-2.7 GHz LNA equipped with NXP’s BFU730F wide band transistor. This Application note is related to evaluation board OM7690/BFU730F,598 12nC 934065627598 NXP Semiconductors AN11006 2.3_2.7GHz LNA Revision history Rev Date 2.0 1.0 20112710 20110106 Description Schematic updated Initial document. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 2 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 1. Introduction The BFU730F is a discrete HBT that is produced using NXP Semiconductors’ advanced 110 GHz fT SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This allows steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base resistance, lower noise and higher cut off frequency can be achieved. The BFU730F is one of a series of transistors made in SiGe:C. BFU710F, BFU760 and BFU790 are the other types, BFU710 is intended for ultra low current applications. The BFU760F and BFU790F are high current types and are intended for application where linearity is key. The BFU7XXF are ideal in all kind of applications where cost matters. It also gives design flexibility. 2. Requirements and design of the 2.3-2.7GHz GHz LNA The BFU730 2.3-2.7GHz LNA EVB simplifies the evaluation of the BFU730 wideband transistor, for this frequency range, in which e.g. WLAN, Bluetooth, WiMax, LTE etc systems are present. The EVB enables testing of the device performance and requires no additional support circuitry. The board is fully assembled with BFU730, including input- and output matching, to optimize the performance. The input match is a compromise between best noise figure and good Input return loss. The board is supplied with two SMA connectors for input and output connection to RF test equipment. Table 1. Target spec. Target specification of the 2.3-2.7 GHz LNA. Vcc 3 V Icc 10 mA NF 18 dB IRL >10 dB ORL >10 dB 3. Design The 2.3_2.7 GHz LNA consists of one stage grounded emitter BFU730F amplifier. For this amplifier 11 external components are used, for matching, biasing and decoupling. The design has been conducted using Agilent’s Advanced Design System (ADS). The 2D EM Momentum tool has been used to co-simulate the PCB. Results are given in paragraph 4.5. The LNA shows a gain of 20 dB, NF of 0.8 dB, input P1dB of –16.5 dBm and an input IP3 of 1.5 dBm The LNA shown in this application note is unconditional stable 10 MHz-20 GHz. AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 3 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 3.1 BFU730F 2.3-2.7 GHz LNA-ADS Simulation circuit Fig 1. ADS simulation circuit for 2.3-2.7 GHz LNA AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 4 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 3.2 BFU730F 2.3-2.7 GHz LNA - ADS Gain and match simulation results Fig 2. ADS Gain and match simulation results for 2.3-2.7 GHz LNA AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 5 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 3.3 BFU730F 2.3-2.7 GHz LNA - ADS NF simulation results Fig 3. ADS Noise Figure simulation results for 2.3-2.7 GHz LNA AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 6 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 3.4 BFU730F 2.3-2.7 GHz LNA - ADS Stability simulation results (1) As K≥1 and Mu≥1, the LNA is unconditionally stable for the whole frequency band Fig 4. ADS stability simulation results for 2.3-2.7 GHz LNA AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 7 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 4. Implementation 4.1 Schematic GND GND Vcc R2 R1 C4 C5 R3 C3 L2 L3 RF_INPUT BFU730F C1 L1 R4 C6 C7 L4 RF_OUTPUT Fig 5. BFU730F 2.3-2.7 GHz LNA schematic (019aab300) AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 8 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 4.2 Layout and assembly Fig 6. Layout and assembly information for BFU730F 2.3-2.7 GHz LNA EVB AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 9 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA Table 2. Bill of materials Size 2X2mm 20X35mm Capacitor Capacitor 0402 0402 100 pF 68 nF MurataGRM1555 MurataGRM1555 DC block Bias Decoupling Bias Decoupling Bias Decoupling output match output match input match input match output match output match Bias Setting Bias Setting Hfe and Temp spread cancellation Value Type NXP Semiconductors Note HBT Designator Description Q1 PCB C1 C3 BFU730F C4 Capacitor 0402 6.8 pF MurataGRM1555 C5 Capacitor 0402 1 pF MurataGRM1555 C6 C7 L1 L2 L3 L3 R1 R2 Capacitor Capacitor Inductor Inductor Inductor Inductor Resistor Resistor 0402 0402 0402 0402 0402 0402 0402 0402 3.3 pF 4.7 pF 1.5 nH 8.7 nH 4.7 nH 3.6 nH 37 K 100 R MurataGRM1555 MurataGRM1555 Murata LQW 15 Murata LQW15 Murata LQW15 Murata LQP15 R3 R4 X1,X2 Resistor Resistor SMA RF connector DC header 0402 0402 - 10 Ohm 0R Johnson, End launch SMA 142-0701-841 Molex, PCB header, Right Angle, 1 row, 3 way 901210763 Stability NA RF input/ RF output Bias connector X3 - 4.3 PCB layout. A good PCB Layout is an essential part of an RF circuit design. The EVB of the BFU730 can serve as a guideline for laying out a board using either the BFU730 or one of the other SiGe.C HBTs in the SOT343F package. Use controlled impedance lines for all high frequency inputs and outputs. Bypass VCC with decoupling capacitors, preferable located as close as possible to the device. For long bias lines it may be necessary to add decoupling capacitors along the line further away from the device. Proper grounding the emitters is also essential for the performance. Either connect the emitters directly to the AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 10 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA ground plane ore through vias, or do both. The material that has been used for the EVB is FR4 using the stack shown in Fig 7 (1) Material supplier is Isola Duraver; Er=4.6-4.9 Tδ=0.02 Fig 7. PCB material stack AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 11 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 4.4 LNA View Fig 8. 2.3_2.7 GHz LNA AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 12 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 4.5 Measurement results Table 3. Typical measurement results measured on the evaluation board. Temp=25 °C, frequency is 2.5GHz unless otherwise specified. Parameter Supply Voltage Supply Current Noise Figure 2.3 GHz Power Gain 2.5 GHz 2.7 GHz Input return Loss Output return Loss Input 1dB Gain compression Point Output 1dB Gain compression Point Input third order intercept point Output third order intercept point Power settling time Toff [1] Symbol Vcc Icc NF [1] Value 3 10 0.8 21.2 Unit V mA dB dB dB dB dB dB dBm dBm dBm dBm ns ns Remarks GP 21 20.5 IRL ORL Pi1dB Po1dB IP3i IP3o Ton 7.9 17.5 -16.5 +3.7 +1.5 +22.5 124 176 The NF and gain figures are being measured at the SMA connectors of the evaluation board, so losses of the connectors and the PCB of approximately 0.1 dB are not substracted AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 13 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 4.5.1 Gain and match - typical values Fig 9. Typical Gain and match measured values AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 14 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 4.5.2 NF and Gain- typical values (1) NF and Gain measurements correction applied see § 5 for values Fig 10. Typical NF curve AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 15 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 4.5.3 Stability Fig 11. Stability typical measurement results AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 16 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 4.5.4 1dB compression point typical values. (1) Pi1dB=-16.4 dBm Po1dB=3.7 dBm Fig 12. Typical 1 dB compression point curve. AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 17 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 4.5.5 Linearity IP3 – typical values (1) IP3o=-8.9+((72-8.9)/2)=+22.65 dBm; IP3i= -30 dBm+63.1/2=-30+31.55=+1.55 dBm Fig 13. IM3 - typical values AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 18 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 4.5.6 Power settling time (1) Green curve is power supply; black curve is the video out of the spectrum analyzer. Fig 14. ton Power settling time AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 19 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA (1) Green curve is power supply; black curve is the video out of the spectrum analyzer. Fig 15. toff Power settling time 5. NF measurement corrections There are two types of errors and losses that have been taken into account to correct the NF measurement results: (1) Own system error for NF measurement and (2) insertion losses accounted to RF IN and RF OUT connectors, microstrip feed lines used at the input of the LNA in NF measurements. 5.1 NF measurement system error A Miteq professional amplifier, rated as NF=0.41 dB, Gain=30 dB, has been used as reference for NF measurement system correction. Its manufacturer data is in Fig 16 AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 20 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA Fig 16. Miteq amp 1228664 Miteq 1228664 amplifier measured with the NF setup used to qualify the BFU730F 2.32.7GHz LNA has the NF performances listed in Fig 17. The system correction factor, NFsys, is the difference between the NF measured and the 0.42 dB value from the catalog. At 2GHz this difference is about 0.3 dB and at 3 GHz around 0.15 dB. AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 21 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA (2) NFsys= (NF in Fig 17 – NF in Fig 16) represents the NF system correction factor: average value = 0.2 dB Fig 17. Miteq 1228664 amplifier NF and Gain 5.2 Insertion losses. Insertion losses have not been taken in to account so measurements are referenced to the SMA connectors. AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 22 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 6. Legal information 6.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of noninfringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer. In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose. 6.2 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine 6.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are property of their respective owners. AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 23 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 7. List of figures Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6. Fig 7. Fig 8. Fig 9. Fig 10. Fig 11. Fig 12. Fig 13. Fig 14. Fig 15. Fig 16. Fig 17. ADS simulation circuit for 2.3-2.7 GHz LNA ...... 4 ADS Gain and match simulation results for 2.32.7 GHz LNA ..................................................... 5 ADS Noise Figure simulation results for 2.3-2.7 GHz LNA ........................................................... 6 ADS stability simulation results for 2.3-2.7 GHz LNA ................................................................... 7 BFU730F 2.3-2.7 GHz LNA schematic ............. 8 Layout and assembly information for BFU730F 2.3-2.7 GHz LNA EVB ...................................... 9 PCB material stack ......................................... 11 2.3_2.7 GHz LNA ............................................ 12 Typical Gain and match measured values ...... 14 Typical NF curve ............................................. 15 Stability typical measurement results .............. 16 Typical 1 dB compression point curve. ........... 17 IM3 - typical values ......................................... 18 ton Power settling time .................................... 19 toff Power settling time .................................... 20 Miteq amp 1228664 ........................................ 21 Miteq 1228664 amplifier NF and Gain ............ 22 AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 24 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 8. List of tables Table 1. Table 2. Table 3. Target spec. ...................................................... 3 Bill of materials................................................ 10 Typical measurement results measured on the evaluation board. ............................................ 13 AN11006 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev 2 — 27 October 2011 25 of 26 NXP Semiconductors AN11006 2.3_2.7GHz LNA 9. Contents 1. 2. 3. 3.1 3.2 3.3 3.4 4. 4.1 4.2 4.3 4.4 4.5 4.5.1 4.5.2 4.5.3 4.5.4 4.5.5 4.5.6 5. 5.1 5.2 6. 6.1 6.2 6.3 7. 8. 9. Introduction ......................................................... 3 Requirements and design of the 2.3-2.7GHz GHz LNA ............................................................... 3 Design .................................................................. 3 BFU730F 2.3-2.7 GHz LNA-ADS Simulation circuit.................................................................. 4 BFU730F 2.3-2.7 GHz LNA - ADS Gain and match simulation results ..................................... 5 BFU730F 2.3-2.7 GHz LNA - ADS NF simulation results ................................................................ 6 BFU730F 2.3-2.7 GHz LNA - ADS Stability simulation results ............................................... 7 Implementation .................................................... 8 Schematic .......................................................... 8 Layout and assembly ......................................... 9 PCB layout. ...................................................... 10 LNA View ......................................................... 12 Measurement results ........................................ 13 Gain and match - typical values ....................... 14 NF and Gain- typical values ............................. 15 Stability ............................................................ 16 1dB compression point typical values. ............ 17 Linearity IP3 – typical values ............................ 18 Power settling time ........................................... 19 NF measurement corrections ........................... 20 NF measurement system error......................... 20 Insertion losses. ............................................... 22 Legal information .............................................. 23 Definitions ........................................................ 23 Disclaimers....................................................... 23 Trademarks ...................................................... 23 List of figures..................................................... 24 List of tables ...................................................... 25 Contents ............................................................. 26 Please be aware that important notices concerning this document and the product(s) described herein, have been included in the section 'Legal information'. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 October 2011 Document identifier: AN11006