AN11010

AN11010 Single stage Ku band LNA using BFU730F Rev. 1.0 — 11 January 2011 Application note Document information Info Content Keywords Abstract BFU730F, LNA, Ku band, LNB The document provides circuit, layout, BOM and performance information on Ku band LNA equipped with NXP’s BFU730F wide band transistor. NXP Semiconductors AN11010 Ku band LNA using BFU730F Revision history Rev Date 1.0 20110111 Description Initial document Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 2 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 1. Introduction BFU730F is a discrete HBT produced in NXP’s SiGeC QuBIC4x BiCmos process. SiGeC is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This allows steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base resistance, lower noise and higher cut off frequency can be achieved. 2. Requirements for Ku band LNA The typical application for a Ku band LNA consists of amplification stage in the MW preamplifier chain of a satellite LNB. The noise figure requirements for LNBs may vary from standard to standard, however most of them will set a figure of: NFLNB ≤ 1.2dB BFU730F typical values for the minimum noise figure and maximum stable gain at Ku band frequency of 12GHz and bias of 2V / 10mA are: NFmin = 1.1dB and Gmax = 12.5dB This recommends the device as an alternative solution to replace pHemts in Ku band LNA applications. IF the target spec for the BFU730F LNA noise and gain is: NF= 1.4dB and Gain = 11.5dB The LNB system performance is as it shows up in Table 1: Table 1. BFU730F vs pHemt NF and Gain performance comparison 1 stage NF/Gain (dB) st Preamplifier 2 stage NF/Gain (dB) nd 3 stage NF/Gain (dB) rd Mixer stage NF/Gain (dB) LNB NF/Gain (dB) 2 stage pHemt 0.8 / 12 pHemt 0.8 / 12 pHemt 0.8 / 12 pHemt 1 / 12 BFU730F 1.4 / 11.5 pHemt 1 / 12 pHemt 1 / 12 BFU730F 1.4 / 11.5 N/U N/U pHemt 1 / 12 BFU730F 1.4 / 11.5 BFU730F 1.4 / 11.5 active 8/2 active 8/2 diode 12 / -12 diode 12 / -12 diode 12 / -12 0.93 / 26 0.97 / 25.5 0.88 / 24 0.88 / 23.5 0.91 / 23 3 stage pHemt 0.8 / 12 pHemt 0.8 / 12 The performance of the stand-alone BFU730F amplifier is slightly worse compare to the pHemt one, however in an LNB chain it gives almost no performance change when used as LNA3, or minor acceptable degradation when used as LNA2. AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 3 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 3. Design The Ku band LNA consists of one stage BFU730F amplifier. It is aimed to replace more costly pHemt transistors in the second and / or third stage of the LNB preamplifier. These stages have to compensate the higher noise of the following mixer stage, thus their gain has to be as high as possible. The driving designs criteria for the LNA is the maximization of its gain. Secondly the noise figure has to be as good as possible, with a very small compromise on gain. Due to the gain criteria, the input and output match are also optimized. Stability wise the LNA has to be unconditionally stable over very broad frequency range. In terms of linearity, the system analysis does not impose stringent requirements. The design has been conducted using Agilent’s Advanced Design System (ADS). The 2D EM Momentum tool has been used to design the microwave section and the PCB. The linear and harmonic balanced circuit tools have been used to simulate the gain, noise, match, stability and linearity performances of the LNA. 3.1 BFU730F Ku LNA - ADS simulation circuit Fig 1. ADS simulation circuit for BFU730F Ku band LNA AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 4 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 3.2 BFU730F Ku LNA - ADS Gain and match simulation results Fig 2. ADS Gain and match simulation results for BFU730F Ku band LNA 3.3 BFU730F Ku LNA - ADS NF simulation results Fig 3. ADS Noise Figure simulation results for Ku band LNA AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 5 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 3.4 BFU730F Ku band LNA - ADS stability simulation results As K≥1 and Mu≥1, the LNA is unconditionally stable for the whole frequency band Fig 4. ADS stability simulation results for Ku band LNA 3.5 BFU730F Ku band LNA - ADS linearity simulation results OIP3 = Pf1+(Pf1-P2f1_f2)/2 = -0.4dBm + (-0.4 + 24.2)/2dB = 11.5dBm IIO3 = OIP3 – Gain = 11.5dBm – 10.2dB = 1.3dBm Fig 5. AN11010 ADS linearity simulation results for Ku band LNA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 6 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 4. Implementation 4.1 Schematic Fig 6. Schematic for BFU730F Ku band LNA EvB AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 7 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 4.2 Layout and assembly Fig 7. Table 2. Layout and assembly information for BFU730F Ku band LNA EvB Bill of materials Size 2X2mm 30X30mm Capacitor 0402 2X 0.1pF (0.2pF) 220pF 47nF 47R 10R 27k 300R Giga Lane PSF-S01 Murata GRM1555C1HR10BA01 GRM1555C1HR20BA01 Decoupling Decoupling Stability Stability Bias Bias RF connector Bias Input match Value Type NXP Semiconductors Note HBT Designator Description Q1 PCB C1, C6 BFU730F C2, C3 C4 R1 R2 R3 R4 X1, X2 Capacitor Capacitor Resistor Resistor Resistor Resistor SMA RF connector DC connector 0402 0402 0402 0402 0402 0402 X3 Molex, PCB header 2way AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 8 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 4.3 Printed Circuit Board details The PCB material used for this LNA Evaluation Board is Rogers RO4003. The PC board consists of: 0.35um top metal layer, 0.5mm thickness low loss dielectric layer with εR = 3.38 and TanD=0.0024 and 0.35um bottom metal layer 4.4 LNA view Fig 8. BFU730F Ku LNA EvB AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 9 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 4.5 Measurement results 4.5.1 Gain and match – typical values (1) No gain correction has been applied / see § 5.3 to apply correction (2) Blue – S11, red – S22 Fig 9. BFU730F Ku band LNA – Gain and match measurement plots 4.5.2 NF and Gain – typical values (1) NF and Gain correction applied / see § 5.3 for value Fig 10. BFU730F Ku band LNA – NF and Gain measurement plots AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 10 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 4.5.3 Linearity / OIP3 – typical values OIP3 = Pf1+(Pf1-P2f1_f2)/2 = 4.2dBm + (4.2 + 30)/2dB = 21.3dBm IIO3 = OIP3 – Gain = 21.3dBm – 11dB = 10.3dBm Fig 11. BFU730F Ku band LNA – Linearity measurement plot 4.5.4 Gain, NF, Current vs temperature BFU730F Ku LNA exhibits less than 1dB gain variation for temperature varying in the range of: -40ºC to +85ºC Table 3. Gain / NF vs Temp [1] BFU730F EvB4 tested for Gain and NF variation over temperature Temperature (ºC) +25 +50 +70 +85 -10 -25 -40 [1] Icc (mA) 11.6 11.4 11.1 11.0 11.8 11.9 12 NF (dB) 1.45 1.6 1.75 1.8 1.2 1.15 1.1 Gain (dB) 10.7 10.65 10.6 10.55 11.2 11.2 11.25 Measurements have been focused on relative variation of the Gain and NF vs. temperature, however the absolute numbers might not be accurate. NF and Gain plots are available by request. All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. AN11010 Application note Rev. 1.0 — 11 January 2011 11 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 4.5.5 Summary Measurements results averaged over nine EvBs are presented in Table 4 Table 4. Typical results measured on the BFU730F Ku band LNA Evaluation Boards Operating frequency is f=11.5GHz unless otherwise specified; Temp = 25 °C Parameter Supply Voltage Supply Current 10.75GHz 11.25GHz Power gain 11.75GHz 12.25GHz 12.75GHz 10.75GHz 11.25GHz Noise Figure 11.75GHz 12.25GHz 12.75GHz Input Return Loss Output Return Loss Input 1dB Gain Compression Input third order intercept point RLin RLout Pi1dB IP3i NF [4] [5] Symbol VCC ICC Min 4.75 10.8 Typ 5 11.5 10.55 10.9 Max 5.25 12.1 Unit V mA dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm Gp [2] [3] 11.15 11 10.4 1.4 1.25 1.2 1.2 1.35 12 12 0.5 10 [2] [3] [4] [5] No gain correction has been applied. To apply gain correction see § 5.3 Average Gain = 10.85dB NF correction applied, see § 5.3 Average NF = 1.3dB AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 12 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 5. NF and Gain measurement corrections There are two types of errors and losses that have been taken into account to correct the NF and Gain measurement results: (1) Own system error for NF measurement and (2) insertion losses accounted to RF IN and RF OUT connectors, microstrip feed lines and the DC block used at the output of the LNA in NF measurements. 5.1 NF measurement system error A Miteq professional amplifier, rated as NF=1dB, Gain=24dB, has been used as reference for NF measurement system correction. Its manufacturer data is in Fig 12: Fig 12. Miteq amp 062 Miteq 062 amplifier measured with the NF setup used to qualify the BFU730F Ku band LNA has the NF performances listed in Fig 13. The system correction factor, NFsys, is the difference between the measured NF and the 1dB reference value from the catalog (2) NFsys= NFtable13 – 1dB represents the NF system correction factor: average value = 0.5dB Fig 13. Miteq 062 amplifier NF and Gain AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 13 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 5.2 Insertion losses The losses that have to be taken into account are: (1) RF connectors and micro strip lines for Gain-match measurement and RF connectors and microstrip lines plus output DC block for the NF-Gain measurement. Fig 14 and Fig 15 below plot the two losses: (3) RF_IL = 0.75dB represents the total on board loss of the LNA (RF connectors and 50Ω line) Fig 14. Insertion loss for 2 RF connector and 27mm uStrip line on Rogers4003 PCB (4) RF_IL_DC=0.95dB represents the on board loss + output DC block loss (5) DC block loss ≈ 0.2dB Fig 15. Insertion loss for a RO4003 27mm SMA_SMA thru + Agilent DC block AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 14 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F Fig 16 shows the on board loss spitted between the input and the output: (6) RF input loss = 0.15dB / RF output loss = 0.5dB Fig 16. Insertion loss distribution 5.3 Correction factors for Gain-match and NF-Gain measurements Table 5. Correction factors / values Measurement Correction Corrected for type on Gain-match on Network Analyzer NF-Gain on NF Analyzer Gain NF Gain RFin + RFout total loss Correction value RF_IL=RFin + RFout = 0.75dB Correction applied N Y Y NF System error + RFin loss NFsys+RFin = 0.5dB+0.15dB ≈0.65dB RFout loss + DC block loss RF_IL_DC –NFsys-RFin=0.95dB-0.65dB = 0.3dB AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 15 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 6. Abbreviations / explanations Table 6. List of abbreviation within text Stands for Low Noise Amplifier Low Noise Block LNB in the frequency band of 10.7 ~ 12.75GHz Noise Figure Printed Circuit Board Bill of materials LNB for China Satellite System Microwave Electromagnetic Abbreviation LNA LNB Ku band LNB NF PCB BOM ABS-S LNB MW EM AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 16 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 7. Legal information 7.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). 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However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the 7.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are property of their respective owners. — is a trademark of NXP B.V. AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 17 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 8. List of figures Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6. Fig 7. Fig 8. Fig 9. Fig 10. Fig 11. Fig 12. Fig 13. Fig 14. Fig 15. Fig 16. ADS simulation circuit for BFU730F Ku band LNA ................................................................... 4 ADS Gain and match simulation results for BFU730F Ku band LNA .................................... 5 ADS Noise Figure simulation results for Ku band LNA ................................................................... 5 ADS stability simulation results for Ku band LNA .......................................................................... 6 ADS linearity simulation results for Ku band LNA .......................................................................... 6 Schematic for BFU730F Ku band LNA EvB ....... 7 Layout and assembly information for BFU730F Ku band LNA EvB ............................................. 8 BFU730F Ku LNA EvB ....................................... 9 BFU730F Ku band LNA – Gain and match measurement plots ......................................... 10 BFU730F Ku band LNA – NF and Gain measurement plots ......................................... 10 BFU730F Ku band LNA – Linearity measurement plot .................................................................. 11 Miteq amp 062 ................................................. 13 Miteq 062 amplifier NF and Gain...................... 13 Insertion loss for 2 RF connector and 27mm uStrip line on Rogers4003 PCB ...................... 14 Insertion loss for a RO4003 27mm SMA_SMA thru + Agilent DC block ................................... 14 Insertion loss distribution .................................. 15 AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 18 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 9. List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. BFU730F vs pHemt NF and Gain performance comparison ....................................................... 3 Bill of materials.................................................. 8 Gain / NF vs Temp .......................................... 11 Typical results measured on the BFU730F Ku band LNA Evaluation Boards .......................... 12 Correction factors / values .............................. 15 List of abbreviation within text ......................... 16 AN11010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Application note Rev. 1.0 — 11 January 2011 19 of 20 NXP Semiconductors AN11010 Ku band LNA using BFU730F 10. Contents 1. 2. 3. 3.1 3.2 3.3 3.4 3.5 4. 4.1 4.2 4.3 4.4 4.5 4.5.1 4.5.2 4.5.3 4.5.4 4.5.5 5. 5.1 5.2 5.3 6. 7. 7.1 7.2 7.3 8. 9. 10. Introduction ......................................................... 3 Requirements for Ku band LNA ......................... 3 Design .................................................................. 4 BFU730F Ku LNA - ADS simulation circuit ............ 4 BFU730F Ku LNA - ADS Gain and match simulation results ............................................... 5 BFU730F Ku LNA - ADS NF simulation results ..... 5 BFU730F Ku band LNA - ADS stability simulation results ................................................................ 6 BFU730F Ku band LNA - ADS linearity simulation results ................................................................ 6 Implementation .................................................... 7 Schematic.............................................................. 7 Layout and assembly ............................................ 8 Printed Circuit Board details .................................. 9 LNA view ............................................................... 9 Measurement results ........................................... 10 Gain and match – typical values.......................... 10 NF and Gain – typical values............................... 10 Linearity / OIP3 – typical values .......................... 11 Gain, NF, Current vs temperature ....................... 11 Summary ............................................................. 12 NF and Gain measurement corrections .......... 13 NF measurement system error ............................ 13 Insertion losses ................................................... 14 Correction factors for Gain-match and NF-Gain measurements ................................................. 15 Abbreviations / explanations............................ 16 Legal information .............................................. 17 Definitions............................................................ 17 Disclaimers .......................................................... 17 Trademarks ......................................................... 17 List of figures..................................................... 18 List of tables ...................................................... 19 Contents ............................................................. 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in the section 'Legal information'. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 January 2011 Document identifier: AN11010