DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D088
BAP64-05 Silicon PIN diode
Preliminary specification 1999 Jun 16
Philips Semiconductors
Preliminary specification
Silicon PIN diode
FEATURES • High voltage, current controlled • RF resistor for RF attenuators and switches • Low diode capacitance • Low diode forward resistance • Low series inductance • For applications up to 3 GHz. APPLICATIONS • RF attenuators and switches. DESCRIPTION Two planar PIN diodes in common cathode configuration in a SOT23 small plastic SMD package.
Marking code: 5Kp.
BAP64-05
PINNING PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) common cathode
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF Ptot Tstg Tj continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C − − − −65 −65 175 100 250 +150 +150 V mA mW °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
1999 Jun 16
2
Philips Semiconductors
Preliminary specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF IR forward voltage reverse leakage current IF = 50 mA VR = 175 V VR = 20 V VR = 0; f = 1 MHz Cd diode capacitance VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz IF = 0.5 mA; f = 100 MHz; note 1 rD diode forward resistance IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 IF = 100 mA; f = 100 MHz; note 1 τL charge carrier life time − − − − − − − − − − 0.95 − − 0.52 0.37 0.23 20 10 2 0.7 1.55 PARAMETER CONDITIONS MIN. TYP.
BAP64-05
MAX.
UNIT
1.1 10 1 − 0.5 0.35 40 20 3.8 1.35 −
V µA µA pF pF pF Ω Ω Ω Ω µs
when switched from IF = 10 mA to − IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA −
LS Note
series inductance
1.4
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 220 UNIT K/W
1999 Jun 16
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Philips Semiconductors
Preliminary specification
Silicon PIN diode
GRAPHICAL DATA
BAP64-05
100 rD (Ω)
600 CD (fF) 500
10
400
300
1
200
100
0.1 0.1 1 10 100 IF (mA)
0 0 4 8 12 16 VR (V)
f = 1 MHz; T j = 25 °C.
20
f = 100 MHz; Tj = 25 °C.
Fig.2
Forward resistance as a function of forward current; typical values.
Fig.3
Diode capacitance as a function of reverse voltage; typical values.
0 |S21|2 (dB) -1
(1) (3) (2)
0 |S21|2 (dB) -5
-10 -2
(4)
-15 -3 -20 -4
-25
-5 0.5 1 1.5 2 2.5 3 f (GHz)
-30 0.5 1 1.5 2 2.5 3 f (GHz)
(1) I F = 100 mA.; (2) IF = 10 mA.; (3) I F = 1 mA.; (4) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. Diode zero biased and inserted in series with a 50 Ω stripline circuit. T amb = 25 °C.
Fig.4
Insertion loss ( |S21|2) of the diode as a function of frequency; typical values.
Fig.5
Isolation (|S21|2) of the diode as a function of frequency; typical values.
1999 Jun 16
4
Philips Semiconductors
Preliminary specification
Silicon PIN diode
PACKAGE OUTLINE
BAP64-05
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Jun 16
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Philips Semiconductors
Preliminary specification
Silicon PIN diode
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BAP64-05
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jun 16
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Philips Semiconductors – a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 © Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 65
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Printed in The Netherlands
125004/00/02/pp7
Date of release: 1 999
Jun 16
Document order number:
9397 750 06089