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BAS21VD

BAS21VD

  • 厂商:

    PHILIPS

  • 封装:

  • 描述:

    BAS21VD - High-voltage switching diode array - NXP Semiconductors

  • 数据手册
  • 价格&库存
BAS21VD 数据手册
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D302 BAS21VD High-voltage switching diode array Product specification 2003 Jul 02 Philips Semiconductors Product specification High-voltage switching diode array FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V • Repetitive peak forward current: max. 1 A. APPLICATIONS • High-voltage switching in surface mounted circuits • Automotive • Communication. DESCRIPTION The BAS21VD is a high-voltage diode array fabricated in planar technology and encapsulated in a small SOT457 plastic SMD package. handbook, halfpage BAS21VD PINNING PIN 1 2 3 4 5 6 DESCRIPTION cathode (k1) cathode (k2) cathode (k3) anode (a3) anode (a2) anode (a1) 6 5 4 6 5 4 1 2 3 1 2 3 MAM473 Marking code: B5. Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current note 1; see Fig.2 t = 1 ms; δ = 25% − − − − 250 200 200 1 V V mA A PARAMETER CONDITIONS MIN. MAX. UNIT non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 10 µs t = 100 µs t = 10 ms − − − − −65 − 16 8 2 250 +150 150 A A A mW °C °C Ptot Tstg Tj Note total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 1. Pulse test: tp = 300 µs; δ = 0.02. 2003 Jul 02 2 Philips Semiconductors Product specification High-voltage switching diode array ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 100 mA IF = 200 mA IR Cd trr reverse current diode capacitance reverse recovery time VR = 200 V; note 1; see Fig.5 VR = 200 V; Tj = 150 °C; note 1 f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 − − 25 − 0.6 16 PARAMETER CONDITIONS MAX. BAS21VD TYP. UNIT 1 1.25 100 100 5 50 V V nA µA pF ns Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT457 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 208 UNIT K/W 2003 Jul 02 3 Philips Semiconductors Product specification High-voltage switching diode array BAS21VD handbook, halfpage 300 MBG442 handbook, halfpage 600 MBG384 IF (mA) 200 IF (mA) (1) (2) (3) 400 100 200 0 0 100 Tamb (oC) 200 0 0 1 VF (V) 2 Device mounted on a FR4 printed-circuit board. (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of a forward voltage. 102 handbook, halfpage IFSM (A) MLE165 102 handbook, halfpage IR (µA) 10 MBG381 10 1 (1) (2) 10 1 1 1 10 10 2 102 103 104 105 tp (µA) 0 100 Tj (oC) 200 Based on square wave currents. Tj = 25 °C prior to surge. (1) VR = VRmax; maximum values. (2) VR = VRmax; typical values. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Fig.5 Reverse current as a function of junction temperature. 2003 Jul 02 4 Philips Semiconductors Product specification High-voltage switching diode array BAS21VD handbook, halfpage 0.6 MLE166 handbook, halfpage 300 MLE167 Cd (pF) 0.5 VR (V) 200 0.4 100 0.3 0.2 0 10 20 30 VR (V) 40 0 0 50 100 150 200 Tamb (°C) f = 1 MHz; Tj = 25 °C. Fig.7 Fig.6 Diode capacitance as a function of reverse voltage; typical values. Maximum permissible continuous reverse voltage as a function of ambient temperature. handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R = 50 Ω i VR 90% tp t R = 50 Ω S V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal IR = 3 mA. Fig.8 Reverse recovery voltage test circuit and waveforms. 2003 Jul 02 5 Philips Semiconductors Product specification High-voltage switching diode array PACKAGE OUTLINE Plastic surface mounted package; 6 leads BAS21VD SOT457 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 c 1 2 3 Lp e bp wM B detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC EIAJ SC-74 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 2003 Jul 02 6 Philips Semiconductors Product specification High-voltage switching diode array DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BAS21VD This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Jul 02 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2003 Jul 02 Document order number: 9397 750 11417
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BAS21VD,135
  •  国内价格
  • 5+0.51229
  • 20+0.46708
  • 100+0.42188
  • 500+0.37668
  • 1000+0.35559
  • 2000+0.34052

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